TRANSISTOR BI 187 Search Results

5080/d 5072 transistor

Contextual Info: M60 Section 7 FREV1A1_11-2011 3/26/13 3:19 PM Page 123 MINIATURE TUBULAR TERMINALS • Quick and Easy to Install • For Production or Prototype • Postive Locking In-Hole • No Staking Required • Holds .010 .25 to .050 (1.27) Diameter Wire These terminals are often used for transistor and Bi-Pin lamp sockets. Terminals

transistor b 1238

Contextual Info: M60 Section 7 FREV2:11-2011 11/20/11 2:47 PM Page 123 MINIATURE TUBULAR TERMINALS • Quick and Easy to Install • For Production or Prototype • Postive Locking In-Hole • No Staking Required • Holds .010 .25 to .050 (1.27) Diameter Wire These terminals are often used for transistor and Bi-Pin lamp sockets. Terminals

TRANSISTOR BI 187

Contextual Info: M55 Sect 6 correx pgsm 10/15/06 1:27 PM Page 100 MINIATURE TUBULAR TERMINALS • Quick and Easy to Install • For Production or Prototype • Postive Locking In-Hole • No Staking Required • Holds .010 .25 to .050 (1.27) Diameter Wire These terminals are often used for transistor and Bi-Pin lamp sockets. Terminals

TRANSISTOR BC 208

Abstract: TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187
Contextual Info: BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC 183L 184 184L 186 187 179 181 182 182L 183 172 173 174 177 178 167 168 169 170 171 135 154 157 158 159 114 132 147 148 149 107 108 109 110 113 •c m Z Z Z “0 -0 "0 "0 2

Gan transistor

Contextual Info: ERICSSON ^ PTB 20176 5 Watts,1.78 -1.92 GHz RF Power Transistor Preliminary Key Features Description The 20176 is a class A/AB RF Power Transistor intended for 26 VDC operation across 1.78-1.92 GHz frequency band. It is rated 5 Watts minimum output power and may be used for both CW and

5a2 zener diode

Abstract: ZENER 1B9 zener 5c2 zener DIODE 5c2 4c2 zener diode Zener Diode 1B9 2b9 zener diode 6c3 zener diode 4b2 zener diode RISCwatch 13h6422
Contextual Info: Application Note PowerPC Embedded Processors Design and Debug Considerations: PowerPC 750CX, 750CXe, and 750L Abstract - This application note discusses the use of certain reference designs and JTAG debugger probes with PowerPC 750CX/CXe processors and

TRANSISTOR BI 187

Abstract: BUT230F BUT23 transistor bI 240
Contextual Info: 3GE S C [ * [ œ S - T H O D • M S O & J IF i Q M 7T2T537 W © S s 00303ÔM 6 3 ■ s -T H O M S Q N ' " P ’W i S 3 U T 2 3 0 F B U T 2 3 0 V NPN TRANSISTOR POWER MODULE ■ HIGH C U RR ENT PO W ER BIPOLAR MODULE ■ VE R Y LOW Rth JUNCTION CASE ■ SPECIFIED

transistor t2a 82

Abstract: transistor 81 110 w 85 transistor BUT 12 transistor BC 245 BUT76A transistor BF 245 MARKING NJ CODE SOT 23 TRANSISTOR BI 237 marking 712 marking va transistors
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • f l ^ O O U 000^533 BUT 76 BUT 76 A TTilUliFOiMISlIMelectronic C m to* HichnotoQits T '3 3 -i3 S ilic o n NPN P o w er T ra n sisto rs Applications: Switching mode power supply, inverters, motor control and relay driver Features:

5c2 zener diode

Abstract: zener 5c2 zener 11B2 zener DIODE 5c2 zener 1B9 6c3 zener diode ZENER A24 zener 2B1 zener 2B6 4c2 zener diode
Contextual Info: Application Note PowerPC Embedded Processors Design and Debug Considerations: PowerPC 750CX, 750CXe, and 750L Abstract - This application note discusses the use of certain reference designs and JTAG debugger probes with PowerPC 750CX/CXe processors and

TRANSISTOR BI 187

Abstract: SN74ABT3611 SN74ABT3613 SN74ACT2236 SN74ACT3632 SN74ACT3638 SN74ACT7803 SN74ACT7807 SN74ACT7811 SN74ACT7814
Contextual Info: Simultaneous-Switching Noise Analysis for Texas Instruments FIFO Products Navid Madani Advanced System Logic – Semiconductor Group SCAA008A March 1996 1 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor

HP8200

Abstract: TRANSISTOR BI 187 SN74ABT3611 SN74ABT3613 SN74ACT2236 SN74ACT3632 SN74ACT3638 SN74ACT7803 SN74ACT7807 SN74ACT7811
Contextual Info: Simultaneous-Switching Noise Analysis for Texas Instruments FIFO Products Navid Madani Advanced System Logic – Semiconductor Group SCAA008A 1 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor

marking 93A

Abstract: TRANSISTOR BI 187
Contextual Info: BFP 93A NPN Silicon RF Transistor 3
For low distortion broadband amplifier and oscillators up to 2GHz at collector currents from 4 5 mA to 30 mA 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 93A

2SB1516F

Contextual Info: 2SB1516F5 V ~ 7 > v 7s $ /Transistors a q q j v ' J ^ = \ > V ÿ > v 7 , $ " W w E p ita x ia l Planar PNP Silicon Transistor fê.M :â M t} W fà /\- Q v i Freq. Power Amp. W Rttj£ /Dimensions Unit : mm 1) VcE(sat) VcE(sat)^—0.3V 6.5 ±0.2 z-3rS ;t

VPS05178

Abstract: on BE 187 TRANSISTOR
Contextual Info: BFP 280 NPN Silicon RF Transistor 3
For low noise, low-power amplifiers in mobile communications systems pager, cordless 4 telephone at collector currents from 0.2 mA to 8 m
fT = 7.5 GHz 2 F = 1.5 dB at 900 MHz 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution!

bfp183

Abstract: VPS05178
Contextual Info: BFP183 NPN Silicon RF Transistor 3
For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 4
fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

BFP182

Abstract: VPS05178
Contextual Info: BFP182 NPN Silicon RF Transistor 3
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 4
fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

BFP181R

Contextual Info: BFP181R NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP181R

Contextual Info: BFP 181R NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 181R

BFP181

Abstract: VPS05178
Contextual Info: BFP181 NPN Silicon RF Transistor 3
For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 4
fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

transistor marking RHs

Abstract: G1816
Contextual Info: BFP 183R NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA
fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 183R

VPS05178

Contextual Info: BFP 181 NPN Silicon RF Transistor 3
For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 4
fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

BFP182R

Abstract: TRANSISTOR BI 187
Contextual Info: BFP182R NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP182R RGs

BFP183R

Abstract: transistor marking RHs
Contextual Info: BFP183R NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA
fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP183R RHs

VPS05178

Contextual Info: BFP 180 NPN Silicon RF Transistor 3
For low-power amplifiers in mobile communication systems pager at collector 4 currents from 0.2 mA to 2.5 mA f T = 7 GHz 2
F = 2.1 dB at 900 MHz 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution!