TRANSISTOR BI 187 Search Results

TRANSISTOR BI 187 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR BI 187 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
5080/d 5072 transistor Abstract: No abstract text available Text: M60 Section 7 FREV1A1_11-2011 3/26/13 3:19 PM Page 123 MINIATURE TUBULAR TERMINALS • Quick and Easy to Install • For Production or Prototype • Postive Locking In-Hole • No Staking Required • Holds .010 .25 to .050 (1.27) Diameter Wire These terminals are often used for transistor and Bi-Pin lamp sockets. Terminals	Original	PDF	TL-11; 5080/d 5072 transistor
transistor b 1238 Abstract: No abstract text available Text: M60 Section 7 FREV2:11-2011 11/20/11 2:47 PM Page 123 MINIATURE TUBULAR TERMINALS • Quick and Easy to Install • For Production or Prototype • Postive Locking In-Hole • No Staking Required • Holds .010 .25 to .050 (1.27) Diameter Wire These terminals are often used for transistor and Bi-Pin lamp sockets. Terminals	Original	PDF	TL-11; transistor b 1238
TRANSISTOR BI 187 Abstract: No abstract text available Text: M55 Sect 6 correx pgsm 10/15/06 1:27 PM Page 100 MINIATURE TUBULAR TERMINALS • Quick and Easy to Install • For Production or Prototype • Postive Locking In-Hole • No Staking Required • Holds .010 .25 to .050 (1.27) Diameter Wire These terminals are often used for transistor and Bi-Pin lamp sockets. Terminals	Original	PDF	TL-11; TRANSISTOR BI 187
5a2 zener diode Abstract: ZENER 1B9 zener 5c2 zener DIODE 5c2 4c2 zener diode Zener Diode 1B9 2b9 zener diode 6c3 zener diode 4b2 zener diode RISCwatch 13h6422 Text: Application Note PowerPC Embedded Processors Design and Debug Considerations: PowerPC 750CX, 750CXe, and 750L Abstract - This application note discusses the use of certain reference designs and JTAG debugger probes with PowerPC 750CX/CXe processors and	Original	PDF	750CX, 750CXe, 750CX/CXe PPC750 5a2 zener diode ZENER 1B9 zener 5c2 zener DIODE 5c2 4c2 zener diode Zener Diode 1B9 2b9 zener diode 6c3 zener diode 4b2 zener diode RISCwatch 13h6422
5c2 zener diode Abstract: zener 5c2 zener 11B2 zener DIODE 5c2 zener 1B9 6c3 zener diode ZENER A24 zener 2B1 zener 2B6 4c2 zener diode Text: Application Note PowerPC Embedded Processors Design and Debug Considerations: PowerPC 750CX, 750CXe, and 750L Abstract - This application note discusses the use of certain reference designs and JTAG debugger probes with PowerPC 750CX/CXe processors and	Original	PDF	750CX, 750CXe, 750CX/CXe 750CXe_ PPC750 5c2 zener diode zener 5c2 zener 11B2 zener DIODE 5c2 zener 1B9 6c3 zener diode ZENER A24 zener 2B1 zener 2B6 4c2 zener diode
TRANSISTOR BI 187 Abstract: SN74ABT3611 SN74ABT3613 SN74ACT2236 SN74ACT3632 SN74ACT3638 SN74ACT7803 SN74ACT7807 SN74ACT7811 SN74ACT7814 Text: Simultaneous-Switching Noise Analysis for Texas Instruments FIFO Products Navid Madani Advanced System Logic – Semiconductor Group SCAA008A March 1996 1 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor	Original	PDF	SCAA008A 64-Pin 56-Pin 80-Pin 24-Pin 28-Pin 32-Pin TRANSISTOR BI 187 SN74ABT3611 SN74ABT3613 SN74ACT2236 SN74ACT3632 SN74ACT3638 SN74ACT7803 SN74ACT7807 SN74ACT7811 SN74ACT7814
HP8200 Abstract: TRANSISTOR BI 187 SN74ABT3611 SN74ABT3613 SN74ACT2236 SN74ACT3632 SN74ACT3638 SN74ACT7803 SN74ACT7807 SN74ACT7811 Text: Simultaneous-Switching Noise Analysis for Texas Instruments FIFO Products Navid Madani Advanced System Logic – Semiconductor Group SCAA008A 1 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor	Original	PDF	SCAA008A HP8200 TRANSISTOR BI 187 SN74ABT3611 SN74ABT3613 SN74ACT2236 SN74ACT3632 SN74ACT3638 SN74ACT7803 SN74ACT7807 SN74ACT7811
marking 93A Abstract: TRANSISTOR BI 187 Text: BFP 93A NPN Silicon RF Transistor 3 For low distortion broadband amplifier and oscillators up to 2GHz at collector currents from 4 5 mA to 30 mA 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 93A	Original	PDF	VPS05178 OT-143 900MHz Oct-12-1999 marking 93A TRANSISTOR BI 187
VPS05178 Abstract: on BE 187 TRANSISTOR Text: BFP 280 NPN Silicon RF Transistor 3 For low noise, low-power amplifiers in mobile communications systems pager, cordless 4 telephone at collector currents from 0.2 mA to 8 m fT = 7.5 GHz 2 F = 1.5 dB at 900 MHz 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	VPS05178 OT-143 900MHz Oct-12-1999 VPS05178 on BE 187 TRANSISTOR
VPS05178 Abstract: No abstract text available Text: BFP 182 NPN Silicon RF Transistor 3 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 4 fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type	Original	PDF	VPS05178 OT-143 900MHz Oct-12-1999 VPS05178
bfp183 Abstract: VPS05178 Text: BFP183 NPN Silicon RF Transistor 3 For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 4 fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking	Original	PDF	BFP183 VPS05178 OT143 900MHz Aug-10-2001 bfp183 VPS05178
BFP182 Abstract: VPS05178 Text: BFP182 NPN Silicon RF Transistor 3 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 4 fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking	Original	PDF	BFP182 VPS05178 OT143 900MHz Aug-09-2001 BFP182 VPS05178
BFP181R Abstract: No abstract text available Text: BFP181R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP181R	Original	PDF	BFP181R OT143R Jun-21-2001 BFP181R
Untitled Abstract: No abstract text available Text: BFP 181R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 181R	Original	PDF	OT-143R Oct-12-1999

transistor marking RHs Abstract: G1816 Text: BFP 183R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 183R	Original	PDF	OT-143R 900MHz Oct-12-1999 transistor marking RHs G1816
VPS05178 Abstract: No abstract text available Text: BFP 181 NPN Silicon RF Transistor 3 For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 4 fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type	Original	PDF	VPS05178 OT-143 Oct-12-1999 VPS05178
BFP182R Abstract: TRANSISTOR BI 187 Text: BFP182R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP182R RGs	Original	PDF	BFP182R OT143R 900MHz Aug-09-2001 BFP182R TRANSISTOR BI 187
BFP183R Abstract: transistor marking RHs Text: BFP183R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP183R RHs	Original	PDF	BFP183R OT143R 900MHz Aug-09-2001 BFP183R transistor marking RHs
VPS05178 Abstract: No abstract text available Text: BFP 180 NPN Silicon RF Transistor 3 For low-power amplifiers in mobile communication systems pager at collector 4 currents from 0.2 mA to 2.5 mA f T = 7 GHz 2 F = 2.1 dB at 900 MHz 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	VPS05178 OT-143 900MHz Oct-12-1999 VPS05178
TRANSISTOR BC 208 Abstract: TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187 Text: BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC 183L 184 184L 186 187 179 181 182 182L 183 172 173 174 177 178 167 168 169 170 171 135 154 157 158 159 114 132 147 148 149 107 108 109 110 113 •c m Z Z Z “0 -0 "0 "0 2	OCR Scan	PDF	lbDT17flfl DDDDh43 O-106 O-92F to-02 melf-002. melf-006 to-237 TRANSISTOR BC 208 TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187
Gan transistor Abstract: No abstract text available Text: ERICSSON ^ PTB 20176 5 Watts,1.78 -1.92 GHz RF Power Transistor Preliminary Key Features Description The 20176 is a class A/AB RF Power Transistor intended for 26 VDC operation across 1.78-1.92 GHz frequency band. It is rated 5 Watts minimum output power and may be used for both CW and	OCR Scan	PDF
TRANSISTOR BI 187 Abstract: BUT230F BUT23 transistor bI 240 Text: 3GE S C [ * [ œ S - T H O D • M S O & J IF i Q M 7T2T537 W © S s 00303ÔM 6 3 ■ s -T H O M S Q N ' " P ’W i S 3 U T 2 3 0 F B U T 2 3 0 V NPN TRANSISTOR POWER MODULE ■ HIGH C U RR ENT PO W ER BIPOLAR MODULE ■ VE R Y LOW Rth JUNCTION CASE ■ SPECIFIED	OCR Scan	PDF	7T2T537 BUT230V BUT230F O-240) PC-029« TRANSISTOR BI 187 BUT230F BUT23 transistor bI 240
transistor t2a 82 Abstract: transistor 81 110 w 85 transistor BUT 12 transistor BC 245 BUT76A transistor BF 245 MARKING NJ CODE SOT 23 TRANSISTOR BI 237 marking 712 marking va transistors Text: TELEFUNKEN ELECTRONIC 17E D • f l ^ O O U 000^533 BUT 76 BUT 76 A TTilUliFOiMISlIMelectronic C m to* HichnotoQits T '3 3 -i3 S ilic o n NPN P o w er T ra n sisto rs Applications: Switching mode power supply, inverters, motor control and relay driver Features:	OCR Scan	PDF	T-33-/3 T0126 15A3DIN transistor t2a 82 transistor 81 110 w 85 transistor BUT 12 transistor BC 245 BUT76A transistor BF 245 MARKING NJ CODE SOT 23 TRANSISTOR BI 237 marking 712 marking va transistors
2SB1516F Abstract: No abstract text available Text: 2SB1516F5 V ~ 7 > v 7s $ /Transistors a q q j v ' J ^ = \ > V ÿ > v 7 , $ " W w E p ita x ia l Planar PNP Silicon Transistor fê.M :â M t} W fà /\- Q v i Freq. Power Amp. W Rttj£ /Dimensions Unit : mm 1) VcE(sat) VcE(sat)^—0.3V 6.5 ±0.2 z-3rS ;t	OCR Scan	PDF	2SB1516F5 2SB1516F

TRANSISTOR BI 187 Search Results

TRANSISTOR BI 187 Result Highlights (5)

TRANSISTOR BI 187 Datasheets Context Search

5080/d 5072 transistor

transistor b 1238

TRANSISTOR BI 187

5a2 zener diode

5c2 zener diode

TRANSISTOR BI 187

HP8200

marking 93A

VPS05178

VPS05178

bfp183

BFP182

BFP181R

Untitled

transistor marking RHs

VPS05178

BFP182R

BFP183R

VPS05178

TRANSISTOR BC 208

Gan transistor

TRANSISTOR BI 187

transistor t2a 82

2SB1516F