TRANSISTOR BIPOLAR 400V 20A Search Results

TRANSISTOR BIPOLAR 400V 20A Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini
2SC5198	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N)
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini

TRANSISTOR BIPOLAR 400V 20A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2PG301 Contextual Info: 2PG301 IGBTs 2PG301 Insulated Gate Bipolar Transistor Unit : mm • Features High breakdown voltage : VCES= 400V ● Housing in the surface mounting package possible ■ Applications 1.0±0.1 1.5±0.1 Large current control possible : IC peak =130A 10.0±0.3	Original	2PG301 2PG301	PDF
2PG301 Contextual Info: 2PG301 IGBTs 2PG301 Insulated Gate Bipolar Transistor Unit : mm • Features High breakdown voltage : VCES= 400V 3.4±0.3 8.5±0.2 Large current control possible : IC peak =130A ● Housing in the surface mounting package possible 1.0±0.1 For camera flash-light	Original	2PG301 2PG301	PDF
Contextual Info: Advanced Power Electronics Corp. AP26G40GEO-HF-3 Insulated Gate Bipolar Power Transistor High Peak Current Capability C C C 400V VCE High Input Impedance C I CP 150A Low 3.0V Gate Drive Strobe Flash Applications TSSOP-8 RoHS-compliant, halogen-free package	Original	AP26G40GEO-HF-3 AP26G40 26G40GEO	PDF
2PG301 Contextual Info: 2PG301 IGBTs 2PG301 Insulated Gate Bipolar Transistor Unit : mm • Features High breakdown voltage : VCES= 400V 3.4±0.3 8.5±0.2 ● Large current control possible : IC peak =130A ● Housing in the surface mounting package possible M Di ain sc te on na	Original	2PG301 2PG301	PDF
AP28G40GEO Contextual Info: AP28G40GEO RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Peak Current Capability C C C VCE 400V ICP 150A C ▼ Low Gate Drive ▼ Strobe Flash Applications TSSOP-8 E E	Original	AP28G40GEO 00V/us, 0V-30V) AP28G40GEO	PDF
Contextual Info: Advanced Power Electronics Corp. AP30G40GEO-HF-3 Insulated Gate Bipolar Power Transistor High Peak Current Capability C C C 400V VCE High Input Impedance C I CP 150A Low 3.0V Gate Drive Strobe Flash Applications TSSOP-8 RoHS-compliant, halogen-free package	Original	AP30G40GEO-HF-3 AP30G40 30G40GEO	PDF
AP28G40GEO-HF-3 Contextual Info: Advanced Power Electronics Corp. AP28G40GEO-HF-3 Insulated Gate Bipolar Power Transistor High Peak Current Capability C C C 400V VCE High Input Impedance C I CP 150A Low Gate Drive Strobe Flash Applications TSSOP-8 RoHS-compliant, halogen-free package E E	Original	AP28G40GEO-HF-3 AP28G40 28G40GEO AP28G40GEO-HF-3	PDF
28G40GEO Abstract: AP28G40GEO Contextual Info: AP28G40GEO RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Peak Current Capability C C C VCE 400V ICP 150A C ▼ Low Gate Drive ▼ Strobe Flash Applications TSSOP-8 E E	Original	AP28G40GEO 28G40GEO AP28G40GEO	PDF
Contextual Info: Advanced Power Electronics Corp. AP28G45GEO-HF-3 Insulated Gate Bipolar Power Transistor High Peak Current Capability G E E 400V VCE High Input Impedance E I CP 150A Low Gate Drive Strobe Flash Applications TSSOP-8 RoHS-compliant, halogen-free package C C	Original	AP28G45GEO-HF-3 AP28G45 28G45GEO	PDF
Contextual Info: AP28G45GEO-HF RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Peak Current Capability E ▼ Low Gate Drive ▼ Strobe Flash Applications G E E VCE 400V ICP 150A C C TSSOP-8	Original	AP28G45GEO-HF 00V/us, 0V-30V)	PDF
Contextual Info: AP26G40GEO-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ ICP=150A @VGE=3.0V ▼ Low Gate Drive C C C VCE 400V ICP 150A C ▼ Strobe Flash Applications ▼ RoHS Compliant & Halogen-Free TSSOP-8 E E	Original	AP26G40GEO-HF	PDF
Contextual Info: AP30G40GEO-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ ICP=150A @VGE=3.0V ▼ Low Gate Drive C C C VCE 400V ICP 150A C ▼ Strobe Flash Applications ▼ RoHS Compliant & Halogen-Free TSSOP-8 E E	Original	AP30G40GEO-HF	PDF
Contextual Info: Advanced Power Electronics Corp. AP28G40GEH/J-HF-3 Insulated Gate Bipolar Power Transistor 400V VCE High Input Impedance I CP 150A High Peak Current Capability G Low Gate Drive C E TO-252 H C Strobe Flash Applications G RoHS-compliant, halogen-free packages	Original	AP28G40GEH/J-HF-3 O-252 O-251 AP28G40 28G40GEJ O-251	PDF
Contextual Info: AP28G40GEO RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR High Input Impedance High Peak Current Capability C C C VCE 400V ICP 150A C Low Gate Drive Strobe Flash Applications TSSOP-8 E E E C G G E Absolute Maximum Ratings	Original	AP28G40GEO 00V/us, 0V-30V)	PDF

Contextual Info: AP28G45GEO-HF RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR High Input Impedance High Peak Current Capability E Low Gate Drive Strobe Flash Applications G E E VCE 400V ICP 150A C C TSSOP-8 C C C G E Absolute Maximum Ratings	Original	AP28G45GEO-HF 00V/us, 0V-30V)	PDF
Contextual Info: AP30G40GEO-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ICP=150A @VGE=3.0V Low Gate Drive C C C VCE 400V ICP 150A C Strobe Flash Applications RoHS Compliant & Halogen-Free TSSOP-8 E E E C G G E Absolute Maximum Ratings	Original	AP30G40GEO-HF	PDF
IRF9210 Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1 Contextual Info: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF	OCR Scan	2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1	PDF
TRANSISTOR BIPOLAR 400V 20A Abstract: igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT Contextual Info: — MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS PAGE SELECTION G U ID E .	OCR Scan	HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S HGTP6N40E1D, HGTP6N50E1D HGTP10N40C1, HGTH12N40C1, HGTP10N40C1D, HGTP10N40E1D, TRANSISTOR BIPOLAR 400V 20A igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT	PDF
ct60am18b Abstract: BR 101 Transistor IGBT 900v 60a CT60AM-18B diode 18B Diode Transistor Contextual Info: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE CT60AM-18B OUTLINE DRAWING Dimensions in mm φ 3.2 4 wr ¡VCES . 900V ¡IC . 60A	Original	CT60AM-18B ct60am18b BR 101 Transistor IGBT 900v 60a CT60AM-18B diode 18B Diode Transistor	PDF
TRANSISTOR BIPOLAR 400V 20A Abstract: igbt 20A 1200v IRGPH40S Contextual Info: Preliminary Data Sheet PD - 9.1085 IRGPH40S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz VCES = 1200V VCE(sat) ≤ 3.0V G @VGE = 15V, IC = 20A	Original	IRGPH40S 400Hz) O-247AC TRANSISTOR BIPOLAR 400V 20A igbt 20A 1200v IRGPH40S	PDF
TRANSISTOR BIPOLAR 400V 20A Abstract: igbt 20A 1200v IRGPH40S igbt 1200V 20A Contextual Info: Preliminary Data Sheet PD - 9.1085 IRGPH40S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz VCES = 1200V VCE(sat) ≤ 3.0V G @VGE = 15V, IC = 20A	Original	IRGPH40S 400Hz) O-247AC TRANSISTOR BIPOLAR 400V 20A igbt 20A 1200v IRGPH40S igbt 1200V 20A	PDF
ct60am Abstract: resonant inverter CT60AM-18B MITSUBISHI Microwave Transistors IGBT 900v 60a 8600V TRANSISTOR ct60am microwave inverter ic Contextual Info: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE CT60AM-18B OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ 3.2 2.5 1 26 4 20.6MIN. 2 1 2 1 3 0.5 3 5.45 5.45 4.0 wr ¡VCES . 900V	Original	CT60AM-18B 20MAX. ct60am resonant inverter CT60AM-18B MITSUBISHI Microwave Transistors IGBT 900v 60a 8600V TRANSISTOR ct60am microwave inverter ic	PDF
CIMax Abstract: IGT6D20 IGT6E20 Contextual Info: Insulated-Gate Bipolar Transistors - IGT6D20, IGT6E20 File Num ber 2127 N-Channel Enhancement-Mode Conductivity-Modulated Power Field-Effect Transistors TERMINAL DIAGRAM 20A, 400V and 500V Tds on = 0.12 Q Features: • Low I / c e (s a t ) — 2.3V typ. @ 20A	OCR Scan	IGT6D20, IGT6E20 IGT6D20 IGT6E20 60usec, CIMax	PDF
MC 931 transistor Abstract: IGT6D20 TRANSISTOR BIPOLAR 400V 20A IGT6E20 Contextual Info: Insulated-Gate Bipolar Transistors - IGT6D20, IGT6E20 File Num ber 2127 N-Channel Enhancement-Mode Conductivity-Modulated Power Field-Effect Transistors TERMINAL DIAGRAM 20A, 400V and 500V Tds on = 0.12 Q Features: • Low I / c e (s a t ) — 2.3V typ. @ 20A	OCR Scan	IGT6D20, IGT6E20 IGT6D20 IGT6E20 60usec, MC 931 transistor TRANSISTOR BIPOLAR 400V 20A	PDF

TRANSISTOR BIPOLAR 400V 20A Search Results

TRANSISTOR BIPOLAR 400V 20A Result Highlights (5)

TRANSISTOR BIPOLAR 400V 20A Datasheets Context Search

2PG301

2PG301

2PG301

AP28G40GEO

AP28G40GEO-HF-3

28G40GEO

IRF9210

TRANSISTOR BIPOLAR 400V 20A

ct60am18b

TRANSISTOR BIPOLAR 400V 20A

TRANSISTOR BIPOLAR 400V 20A

ct60am

CIMax

MC 931 transistor