TRANSISTOR BO 341 Search Results

TRANSISTOR BO 341 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR BO 341 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MPSA63 Abstract: Transistor MPSA63 Contextual Info: MPSA63 PNP SILICON DARLINGTON TRANSISTOR TO-92 MPSA63 is PNP silicon darlington transistor designed for preamplifier input applications. EBC ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage VCES 30V Collector-Base Voltage VCBO 30V Emitter-Base Voltage VE BO	OCR Scan	MPSA63 MPSA63 300mA 625mW 100nA 100mA 300us, Transistor MPSA63	PDF
BF397 Contextual Info: m «§i\| JÉI BF397 PNP SILICON TRANSISTOR TO-92F BF397 is PNP silicon transistor designed for •À high voltage applications. CBE ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VCBO 90 V Collector-Emitter Voltage VCEO 90V Emitter-Base Voltage VE BO 6V Total Power Dissipation	OCR Scan	BF397 O-92F 625mW 100mA 10jiA 100uA Boxt9477, 3-0033G3,	PDF
transistor Bc 540 Abstract: transistor BC 341-6 transistor BC 660 transistor 3702 transistor 3707 transistor 2n 2222 transistor Bc 7 NPN transistor 2n 3904 transistors BC 225 transistor BC 310 Contextual Info: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .	OCR Scan	BCW94 transistor Bc 540 transistor BC 341-6 transistor BC 660 transistor 3702 transistor 3707 transistor 2n 2222 transistor Bc 7 NPN transistor 2n 3904 transistors BC 225 transistor BC 310	PDF
TRANSISTOR BO 344 Abstract: TRANSISTOR BO 341 tny 175 BUK455 BUK455-100A BUK455-100B T0220AB data transistor 1650 Contextual Info: PHILIPS INTERNATIONAL bSE D • 7110fl2b ODbMOfll 067 ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	7110flSb BUK455-100A/B T0220AB BUK455 -100A -100B TRANSISTOR BO 344 TRANSISTOR BO 341 tny 175 BUK455-100A BUK455-100B data transistor 1650	PDF
ebc 300 Abstract: MPS A92 transistor MPS-A92 Contextual Info: PNP SILICON HIGH VOLTAGE TRANSISTOR TO-92A MPS-A92 is PNP silicon planar epitaxial transistor designed for general purpose applications requiring high breakdown voltage, low saturation voltage and low capacitance. EBC ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage	OCR Scan	MPS-A92 O-92A 500m/ 625mV 20MHz Boxfc9477, ebc 300 MPS A92 transistor	PDF
2SC2603 Abstract: 2SC2603 F 2SC2603 G 2SC2603 E sv micro 200EA Contextual Info: 2SC2603 SILICON TRANSISTOR TO-92B 2SC2603 is NPN silicen planar transistor designed for low power general purpose amplifiers. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation	OCR Scan	2SC2603 2SC2603 O-92B 200EA 300mW VCB-50V 100mA -10mA1 300us, Box69477, 2SC2603 F 2SC2603 G 2SC2603 E sv micro	PDF
ZTX752 equivalent Abstract: transistor 42-10a data BC369 FXTA92 BSS98 Contextual Info: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request	OCR Scan	ZVP2106C ZVP2110A ZVP2110C ZVP2120A ZTX788B ZVP2120C ZVP3306A ZVP3310A ZVP4105A 2110C ZTX752 equivalent transistor 42-10a data BC369 FXTA92 BSS98	PDF
Transistor 5331 Abstract: BSV16 BSV17 BSV17-10 bsv16-16 BSV16-10 BSV15 BSV15-10 Silicon Epitaxial Planar Transistor philips Contextual Info: I I N AMER PHIL I P S / D I S C R E T E t.'ÎE J> 002707b 341 I IAPX BSV15 to 17 ^ 5 3 ^ 3 1 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-39 metal envelopes with the collector connected to the case. These transistors are intended for general industrial applications.	OCR Scan	BSV15 BSV15â BSV16â BSV17â BSV15; BSV16; Transistor 5331 BSV16 BSV17 BSV17-10 bsv16-16 BSV16-10 BSV15-10 Silicon Epitaxial Planar Transistor philips	PDF
WF VQE 22 c Abstract: CA3146E RCA CA3146E RCA-CA3118AT WF vqe 24 e ICAN-5296 wf vqe 24 f CA314T wf vqe 14 e CA3146AE Contextual Info: G E SOLID STATE Dl D E \| 3fl75Clfll G014b3fc> 1 \| A rra y s ' CA3118, CA3146, CA3183 T 'H ^ ZS High-Voltage Transistor Arrays Features • Matched general-purpose transistors ■ Vgg matched + 5mV max. ■ Operation from DC to 120 MHz CA3118AT, T; CA3146AE, E	OCR Scan	G014b3k CA3118, CA3146, CA3183 CA3118AT, CA3146AE, CA3183AE, WF VQE 22 c CA3146E RCA CA3146E RCA-CA3118AT WF vqe 24 e ICAN-5296 wf vqe 24 f CA314T wf vqe 14 e CA3146AE	PDF
BY22B Abstract: BU2508A Contextual Info: AMER PHILIPS/DISCRETE b^E T> bb53^31 □ □2fl33ti as? M A R X Philips Semiconductors Product Specification Silicon Diffused Power Transistor BU2508A GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope	OCR Scan	bb53131 BU2508A bbS3T31 0D2B344 BY22B BU2508A	PDF
Contextual Info: BC 200 MINIATURE P N P A F LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR I M E C H A N IC A L O U T L IN E G E N E R A L D ESC R IP T IO N M T -4 2 The BC 200 is a PNP silicon planar epitaxial transistor in miniature plastic package designed for hearing aids, watches, paging systems and other equipment	OCR Scan	Dissipa3-fl90eg	PDF
transistor vergleichsliste Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N	OCR Scan		PDF
TRANSISTOR BO 344 Abstract: TRANSISTOR BO 341 Contextual Info: S G S -T H O M S O N M e iM a ie « B U L48 HIGH VOLTAGE NPN MULTIEPITAXIAL FASTSWITCHING TRANSISTOR . HIGH VOLTAGE CAPABILITY . TIGHT CONTROL OF DYNAMIC CHARACTERISTICS . MINIMUM LOT TO LOT SPREAD FOR RELIABLE OPERATION . LOW BASE DRIVE REQUIREMENTS	OCR Scan	BUL48 BUL48 GC2S780 TRANSISTOR BO 344 TRANSISTOR BO 341	PDF
2SC2603 Abstract: 2SC2603 E 2SC2603 F Contextual Info: TO-92B 2SC2603 is NPN silicon planar transistor designed for low power general purpose amplifiers. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Operating Junction & Storage Temperature	OCR Scan	2SC2603 O-92B 300mW VCB-50V 0-50V 100mA Box69477, 430l81-6 34i93363 2SC2603 E 2SC2603 F	PDF

Contextual Info: BC146 MINIATURE NPN AF LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR 1 M ECHANICAL O U TLIN E G E N E R A L D ESC R IPT IO N M The BC 146 is a NPIMsil icon planar epitaxial transistor in miniature plastic package designed for hearing aids, watches, paging systems and other equipment	OCR Scan	BC146	PDF
transistor Bc 580 Abstract: TRANSISTOR BC 650 c transistor bc 146 transistor bc 33 BC200 ic for hearing aid Package MT-42 200G BOX49477 bc200r Contextual Info: BC 200 MINIATURE PNP AF LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR i M EC H A N IC A L O U T L IN E G E N E R A L D ESCR IPTIO N M T -4 2 The BC 200 is a PNP silicon planar epitaxial transistor in miniature plastic package designed for hearing aids, watches, paging systems and other equipment	OCR Scan	BC200 MT-42 BOX49477 0450B transistor Bc 580 TRANSISTOR BC 650 c transistor bc 146 transistor bc 33 BC200 ic for hearing aid Package MT-42 200G bc200r	PDF
2N3417 Abstract: transistor BO 540 NPN transistor ECB TO-92 Contextual Info: 2N3417 NPN SILICON TRANSISTOR TO-92 2N3417 is NPN silicon planar transistor designed for general purpose power applications. AF medium ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation	OCR Scan	2N3417 2N3417 500mA transistor BO 540 NPN transistor ECB TO-92	PDF
200G Abstract: BOXJ8477 bc200r Contextual Info: 200 MINIATURE P N P AF LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR M E C H A N IC A L O U T LIN E GENERAL DESCRIPTION MT-42 COLOR DOT 1.8max The BC 200 is a PNP silicon planar epitaxial transistor in miniature plastic package designed for hearing aids, watches, paging systems and other equipment	OCR Scan	BC200 MT-42 200G BOXJ8477 bc200r	PDF
PN3568 Contextual Info: PN3568 NPN SILICON TRANSISTOR PN3568 is NPN silicon planar epitaxial transistor designed for amplifier and switching applications for collector current up to 500mA. TO-92 I ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage vCE0 Emitter-Base Voltage	OCR Scan	PN3568 500mA. 500mA 600mW 150mA 300uS,	PDF
TRANSISTOR BO 346 Abstract: transistor bd 346 TRANSISTOR BO 341 OCS30 TRANSISTOR BO 345 Contextual Info: O K I electronic com ponents QCS30 Optical PNPN Switches GENERAL DESCRIPTION T he OCS3C is an optical sw itch form ed b y co m bining a G aA s in frared light em ittin g d io d e a n d a silicon P N P N elem ent th at can w ith sta n d high voltages. T he device is encased in an 8-pin plastic	OCR Scan	QCS30_ OCS30 E86831 Vnu-50 h72H2H0 OCS30 TRANSISTOR BO 346 transistor bd 346 TRANSISTOR BO 341 TRANSISTOR BO 345	PDF
Contextual Info: MPS-A92 PNP SILICON HIGH VOLTAGE TRANSISTOR TO-92A MPS-A92 is PNP silicon planar epitaxial transistor designed for general purpose applications requiring high breakdown voltage, low saturation voltage and low capacitance. EBC ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage	OCR Scan	MPS-A92 O-92A MPS-A92 500m/ 625mV 20MHz Boxfc9477,	PDF
2SA561 Abstract: hx 36 transistor 2SA561 Contextual Info: UKW 2SA5Ö1 FNP SILICON TRANSISTOR TO-92B 2SA561 is PNP silicon., planar transistor designed for low power general purpose amplifiers. ABSOLUTE M A X IMUM RATINGS ECB Collector-Base Voltage Coliector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation	OCR Scan	2SA561 O-92B 300mW 150mA 100mA 3-4T0321 hx 36 transistor 2SA561	PDF
BF173 Transistor Abstract: BF173 Contextual Info: BF 173 IV! I C R a NPN SILICON PLANAR EPITAXIAL TRANSISTOR Œ L_Œ C T"F* o r s i I C S CASE T0-72J THE BF173 IS AN NFN SILICON PLANAR EPITAXIAL TRANSISTOR INTENDED FOR USE IN VIDEO IF AMPLIFIERS AND PARTICULAR FOR THE OUTPUT STAGES. ABSOLUTE MAXIMUM RATINGS	OCR Scan	BF173 T0-72J 200mA 10jiA 100MHz BF173 Transistor	PDF
2SD1834 Contextual Info: h ~7 > V $ /'Tran sistors 2SD1834 2SD1834 7 -J B N P N # - u > h > m m Epitaxial Planar NPN Silicon Transistor (Darlington) tfS^JiSfiffl/M edium Power Amp. • fl-ff^ fiill/D im e n s io n s (U n it: mm) 1) # - ' J > h > i g ^ ? a h FETi.-5o hFE = 15000 (Typ.)	OCR Scan	2SD1834 V/500m 2SD1834	PDF

TRANSISTOR BO 341 Search Results

TRANSISTOR BO 341 Result Highlights (5)

TRANSISTOR BO 341 Datasheets Context Search

MPSA63

BF397

transistor Bc 540

TRANSISTOR BO 344

ebc 300

2SC2603

ZTX752 equivalent

Transistor 5331

WF VQE 22 c

BY22B

transistor vergleichsliste

TRANSISTOR BO 344

2SC2603

transistor Bc 580

2N3417

200G

PN3568

TRANSISTOR BO 346

2SA561

BF173 Transistor

2SD1834