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    TRANSISTOR BO 346 Search Results

    TRANSISTOR BO 346 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BO 346 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    61089b

    Abstract: TH3 thermistor TH5 thermistor TRANSISTOR BO 344 OverCurrent Protector TRANSISTOR BO 346 79R241 GR-1089-CORE JESD51-2 TISP61089B
    Text: TISP61089B DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS TISP61089B High Voltage Ringing SLIC Protector Dual Voltage-Programmable Protectors - Supports Battery Voltages Down to -155 V - Low 5 mA max. Gate Triggering Current


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    PDF TISP61089B TISP61089B 61089b TH3 thermistor TH5 thermistor TRANSISTOR BO 344 OverCurrent Protector TRANSISTOR BO 346 79R241 GR-1089-CORE JESD51-2

    2N3468

    Abstract: No abstract text available
    Text: T im es ? 2N3468 JAN,JANTX JANTXV SILICON SMALL-SIGNAL PNP TRANSISTORS PNP SWITCHING TRANSISTOR FAST SWITCHING HIGH FREQUENCY HIGH CURRENT GAIN T O -39 T O -205A D M A X IM U M R A T IN G S SY M BO L 2N 3468 U N IT S C ollecto r-E m itter V oltage VcEO 50


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    PDF 2N3468 -205A 2N3468

    TRANSISTOR BO 346

    Abstract: 2SK1346
    Text: TOSHIBA 2SKI 346 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOS Type tc-MOS II High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance


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    PDF 2SK1346 100/zsiK TRANSISTOR BO 346 2SK1346

    2N4036

    Abstract: R/ON 4037
    Text: FAIRCHILD SE MI CONDUCTOR 3469674 FA IR C H ILD SEMICONDUCTOR ^ FAIRCHILD 84D 2N4036/2N4037 D • r-z? -^ PNP G eneral Purpose Transistor A Schlum berger Com pany PACKAGE 2N4036 2N4037 ABSOLUTE M AXIM UM RATINGS Note 1 Temperatures Storage Tem perature O perating Ju n ctio n Tem perature


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    PDF 2N4036/2N4037 2N4036 2N4037 2N4037 R/ON 4037

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad M em ory Driver Transistor M PQ 3467 PNP Silicon Motorola Preferred Device fui nil ran nn bòi iti rri LAI TjtaX PNP rv n lina l í i t ü rv n ili ili l ìj MAXIM UM RATINGS Rating Symbol Value Unit Vdc Collector- Emitter Voltage


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    PDF MPQ3467

    ZTX752 equivalent

    Abstract: transistor 42-10a data BC369 FXTA92 BSS98
    Text: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request


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    PDF ZVP2106C ZVP2110A ZVP2110C ZVP2120A ZTX788B ZVP2120C ZVP3306A ZVP3310A ZVP4105A 2110C ZTX752 equivalent transistor 42-10a data BC369 FXTA92 BSS98

    a 103g

    Abstract: a103g
    Text: TRANSISTOR ARRAY UPA103G CONNECTION DIAGRAM FEATURES Top View FIVE MONOLITHIC 9 GHz tr TRANSISTORS: UPA103G T w o o f th e se use a com m o n em itter pin and can be used as diffe re ntia l am plifiers OUTSTANDING hFE 14 13 12 11 10 LINEARITY SMALL PACKAGE


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    PDF UPA103G sign103G UPA103G-E1 2500/REEL 34-6393/FAX a 103g a103g

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR UPA812T OUTLINE DIMENSIONS Units in mm FEATURES SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN:


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    PDF NE681 UPA812T UPA812T UPA812T-T1, 24-Hour

    BFG96

    Abstract: V 904 RL 805 bfg96 scattering NPN transistor 2527 Transistor D 1881 transistor ITT 108 PHHI BFG32 philips MATV amplifiers
    Text: PhjUj^^emiconductori bbS3T31 Q031HTH 5 53 M l A P X ^ ^ ^ ^ ^ ^ ro d u c ^ p e c ific a tio n NPN 5 GHz wideband transistor £ BFG96 N AMER PHILIPS/DISCRETE DESCRIPTION b'lE I PINNING NPN transistor in a 4-lead dual-emitter plastic SO T103 envelope. DESCRIPTION


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    PDF 0031H1H BFG96 OT103 BFG32. OT103. BFG96 V 904 RL 805 bfg96 scattering NPN transistor 2527 Transistor D 1881 transistor ITT 108 PHHI BFG32 philips MATV amplifiers

    TRANSISTOR BO 345

    Abstract: TD62554S TRANSISTOR BO 346 TRANSISTOR BO 344 62554S
    Text: SILICON MONOLITHIC BIPO LAR DIGITAL INTEGRATED CIRCUIT TD62551SJD62553S TD62554SJD62555S 4CH SINGLE DRIVER : C O M M O N EMITTER The TD62551S are comprised of four NPN transistor arrays. Applications include relay, hammer, lamp and display LED drivers. FEATURES


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    PDF TD62551SJD62553S TD62554SJD62555S TD62551S 150mA TD62553S TD62554S TD62555S 2-24V TD62551 TRANSISTOR BO 345 TRANSISTOR BO 346 TRANSISTOR BO 344 62554S

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 346 S2 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 346 S2 Vbs 60 V b ^DS on Package Ordering Code 58 A 0.018 n TO-218AA C67078-S3120-A4 Maximum Ratings Parameter Symbol Continuous drain current


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    PDF O-218AA C67078-S3120-A4 fi53SbD5

    TRANSISTOR BO 346

    Abstract: transistor bd 346 TRANSISTOR BO 341 OCS30 TRANSISTOR BO 345
    Text: O K I electronic com ponents QCS30 Optical PNPN Switches GENERAL DESCRIPTION T he OCS3C is an optical sw itch form ed b y co m bining a G aA s in frared light em ittin g d io d e a n d a silicon P N P N elem ent th at can w ith sta n d high voltages. T he device is encased in an 8-pin plastic


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    PDF QCS30_ OCS30 E86831 Vnu-50 h72H2H0 OCS30 TRANSISTOR BO 346 transistor bd 346 TRANSISTOR BO 341 TRANSISTOR BO 345

    TRANSISTOR BO 346

    Abstract: 2SD2008 2SB1332
    Text: 2SB1332 h ~p > v 7 $ / I ransistors 2SB1332 X t 0^ d r ' > ^ U 7 V - ^ P N P > V =]> b 7 > y ' Z $ Epitaxial Planar PNP Silicon Transistor H ffl/L o w Freq. Power Amp. • ÿi-firfîiH /D im e n s io n s Unit : mm 1) *m >fcT'£>-5o V C E O ^- 80V, lc = —1A


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    PDF 2SB1332 2SD2008 --80V, 2SD2008. TRANSISTOR BO 346 2SD2008 2SB1332

    BUK202-S0Y

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK202-S0Y TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured


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    PDF BUK202-S0Y BUK202-50Y BUK202-5QY

    NF NPN Silicon Power transistor TO-3

    Abstract: transistor bf 458
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA806T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE685 Die in a 2 mm x 1.25 mm package PACKAGE O UTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz 2.1 ± 0.1


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    PDF NE685 UPA806T UPA806T 24-Hour NF NPN Silicon Power transistor TO-3 transistor bf 458

    ml4861is-6

    Abstract: 4046 IC circuit diagram
    Text: October 1996 Micro Linear ML4861 Low Voltage Boost Regulator GENERAL DESCRIPTION FEATURES The ML4861 is a boost regulator designed for D C to DC conversion in 1 to 3 cell battery powered systems. The combination of BiCM OS process technology, internal synchronous rectification, variable frequency operation,


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    PDF ML4861 ML4861 ml4861is-6 4046 IC circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE681M03 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M03 NEW M03 PACKAGE: • S m allest tra n sisto r o u tlin e pa ckag e ava ila ble • Low pro file /0 .5 9 mm package height • Flat lead style fo r be tte r RF p e rfo rm an ce


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    PDF NE681M03 NE681 24-Hour

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR ARRAY UPA101G CONNECTION DIAGRAM FEATURES Top View BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: (9 G H z S in gle T ransisto rs) UPA101G OUTSTANDING 7 hFE LINEARITY SMALL PACKAGE _ 1 TAPE AND REEL PACKAGING OPTION AVAILABLE 6 _ 1 1-


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    PDF UPA101G UPA101G UPA101G-E1 2500/REEL 34-6393/FAX

    abzd

    Abstract: ABZD SOT23-5
    Text: High-Voltage, Low-Power Linear Regulator for Notebook Computers _ Features ♦ Low Cost ♦ 4V to 28V Input Range ♦ 8|iA max Quiescent Supply Current ♦ <1(jA Shutdown Supply Current ♦ 3.3V or 5V, Pin-Selectable Output


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    PDF MAX1615 OT23-5 abzd ABZD SOT23-5

    POWER SUPPLY BTS SIEMENS

    Abstract: 7J40 BTS432D2 E3043 GPT051B5 Q67060-S6201-A2 siemens 3t
    Text: DH flEBSbüS 00fll4fl3 S41 S IE M E N S PROFET B T S 4 3 2 D 2 Smart Highside Power Switch P ro d u ct S um m ary F eatures • Load dump and reverse battery protection1 80 Vi.oad dump • Clamp of negative voltage at output Vbb- VtouT Avalanche Clamp 58


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    PDF BTS432D2 A235L O-220AB/5 Q67060-S6201-A2 GPT051B5 O-22QAB/5, E3043 E3043 Q67060-S6201 POWER SUPPLY BTS SIEMENS 7J40 BTS432D2 GPT051B5 Q67060-S6201-A2 siemens 3t

    BSX19 equivalent

    Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868
    Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small


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    PDF OT-23 BSX19 equivalent BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868

    TC7212

    Abstract: binary to led display decoder
    Text: TELEDYNE COMPONENTS 3 bE D ÔSlVbGS DDG7707 b TSC -T-S M “7 WTELEDYNE COMPONENTS TC7211AM TC7212AM BUS COMPATIBLE 4-DIGIT CMOS DECODER/DRIVER FEATURES GENERAL DESCRIPTION TC7211AM LCD DRIVER The TC7211AM (LCD Decoder/driver) and TC7211AM are CMOS direct drive, 4-digit, 7-segment display decoder


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    PDF DDG7707 TC7211AM TC7212AM TC7211AM 28-segment TC7211A TC7212AM TC7212 binary to led display decoder

    1316c

    Abstract: nec uPC 1316c PC1316C c1316c mpc1316c uPC1316C 36CW transistor P1 P nec 1316c nec+1316c
    Text: BIPOLAR ANALOG INTEGRATED CIRCUIT / / P C I 316 C DUAL AUDIO POWER AMPLIFIER D E SC R IPTIO N The ¿ PC1316C is a dual audio pow er a m p lifie r in a 14-lead dual in line plastic package, and designed fo r portable audio sets. F E A TU R E S Wide operating voltage range. V c c = 3 t o 1 6 V


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    PDF uPC1316C 14-lead PC1316C 1316c nec uPC 1316c PC1316C c1316c mpc1316c 36CW transistor P1 P nec 1316c nec+1316c

    IAO5 Sharp

    Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
    Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The


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    PDF Q60103- thS10 to3530 to4600 to4600 IAO5 Sharp free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071