61089b
Abstract: TH3 thermistor TH5 thermistor TRANSISTOR BO 344 OverCurrent Protector TRANSISTOR BO 346 79R241 GR-1089-CORE JESD51-2 TISP61089B
Text: TISP61089B DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS TISP61089B High Voltage Ringing SLIC Protector Dual Voltage-Programmable Protectors - Supports Battery Voltages Down to -155 V - Low 5 mA max. Gate Triggering Current
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TISP61089B
TISP61089B
61089b
TH3 thermistor
TH5 thermistor
TRANSISTOR BO 344
OverCurrent Protector
TRANSISTOR BO 346
79R241
GR-1089-CORE
JESD51-2
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2N3468
Abstract: No abstract text available
Text: T im es ? 2N3468 JAN,JANTX JANTXV SILICON SMALL-SIGNAL PNP TRANSISTORS PNP SWITCHING TRANSISTOR FAST SWITCHING HIGH FREQUENCY HIGH CURRENT GAIN T O -39 T O -205A D M A X IM U M R A T IN G S SY M BO L 2N 3468 U N IT S C ollecto r-E m itter V oltage VcEO 50
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2N3468
-205A
2N3468
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TRANSISTOR BO 346
Abstract: 2SK1346
Text: TOSHIBA 2SKI 346 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOS Type tc-MOS II High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance
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2SK1346
100/zsiK
TRANSISTOR BO 346
2SK1346
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2N4036
Abstract: R/ON 4037
Text: FAIRCHILD SE MI CONDUCTOR 3469674 FA IR C H ILD SEMICONDUCTOR ^ FAIRCHILD 84D 2N4036/2N4037 D • r-z? -^ PNP G eneral Purpose Transistor A Schlum berger Com pany PACKAGE 2N4036 2N4037 ABSOLUTE M AXIM UM RATINGS Note 1 Temperatures Storage Tem perature O perating Ju n ctio n Tem perature
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2N4036/2N4037
2N4036
2N4037
2N4037
R/ON 4037
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad M em ory Driver Transistor M PQ 3467 PNP Silicon Motorola Preferred Device fui nil ran nn bòi iti rri LAI TjtaX PNP rv n lina l í i t ü rv n ili ili l ìj MAXIM UM RATINGS Rating Symbol Value Unit Vdc Collector- Emitter Voltage
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MPQ3467
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ZTX752 equivalent
Abstract: transistor 42-10a data BC369 FXTA92 BSS98
Text: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request
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ZVP2106C
ZVP2110A
ZVP2110C
ZVP2120A
ZTX788B
ZVP2120C
ZVP3306A
ZVP3310A
ZVP4105A
2110C
ZTX752 equivalent
transistor 42-10a data
BC369
FXTA92
BSS98
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a 103g
Abstract: a103g
Text: TRANSISTOR ARRAY UPA103G CONNECTION DIAGRAM FEATURES Top View FIVE MONOLITHIC 9 GHz tr TRANSISTORS: UPA103G T w o o f th e se use a com m o n em itter pin and can be used as diffe re ntia l am plifiers OUTSTANDING hFE 14 13 12 11 10 LINEARITY SMALL PACKAGE
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UPA103G
sign103G
UPA103G-E1
2500/REEL
34-6393/FAX
a 103g
a103g
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR UPA812T OUTLINE DIMENSIONS Units in mm FEATURES SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN:
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NE681
UPA812T
UPA812T
UPA812T-T1,
24-Hour
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BFG96
Abstract: V 904 RL 805 bfg96 scattering NPN transistor 2527 Transistor D 1881 transistor ITT 108 PHHI BFG32 philips MATV amplifiers
Text: PhjUj^^emiconductori bbS3T31 Q031HTH 5 53 M l A P X ^ ^ ^ ^ ^ ^ ro d u c ^ p e c ific a tio n NPN 5 GHz wideband transistor £ BFG96 N AMER PHILIPS/DISCRETE DESCRIPTION b'lE I PINNING NPN transistor in a 4-lead dual-emitter plastic SO T103 envelope. DESCRIPTION
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0031H1H
BFG96
OT103
BFG32.
OT103.
BFG96
V 904 RL 805
bfg96 scattering
NPN transistor 2527
Transistor D 1881
transistor ITT 108
PHHI
BFG32
philips MATV amplifiers
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TRANSISTOR BO 345
Abstract: TD62554S TRANSISTOR BO 346 TRANSISTOR BO 344 62554S
Text: SILICON MONOLITHIC BIPO LAR DIGITAL INTEGRATED CIRCUIT TD62551SJD62553S TD62554SJD62555S 4CH SINGLE DRIVER : C O M M O N EMITTER The TD62551S are comprised of four NPN transistor arrays. Applications include relay, hammer, lamp and display LED drivers. FEATURES
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TD62551SJD62553S
TD62554SJD62555S
TD62551S
150mA
TD62553S
TD62554S
TD62555S
2-24V
TD62551
TRANSISTOR BO 345
TRANSISTOR BO 346
TRANSISTOR BO 344
62554S
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 346 S2 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 346 S2 Vbs 60 V b ^DS on Package Ordering Code 58 A 0.018 n TO-218AA C67078-S3120-A4 Maximum Ratings Parameter Symbol Continuous drain current
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O-218AA
C67078-S3120-A4
fi53SbD5
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TRANSISTOR BO 346
Abstract: transistor bd 346 TRANSISTOR BO 341 OCS30 TRANSISTOR BO 345
Text: O K I electronic com ponents QCS30 Optical PNPN Switches GENERAL DESCRIPTION T he OCS3C is an optical sw itch form ed b y co m bining a G aA s in frared light em ittin g d io d e a n d a silicon P N P N elem ent th at can w ith sta n d high voltages. T he device is encased in an 8-pin plastic
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QCS30_
OCS30
E86831
Vnu-50
h72H2H0
OCS30
TRANSISTOR BO 346
transistor bd 346
TRANSISTOR BO 341
TRANSISTOR BO 345
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TRANSISTOR BO 346
Abstract: 2SD2008 2SB1332
Text: 2SB1332 h ~p > v 7 $ / I ransistors 2SB1332 X t 0^ d r ' > ^ U 7 V - ^ P N P > V =]> b 7 > y ' Z $ Epitaxial Planar PNP Silicon Transistor H ffl/L o w Freq. Power Amp. • ÿi-firfîiH /D im e n s io n s Unit : mm 1) *m >fcT'£>-5o V C E O ^- 80V, lc = —1A
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2SB1332
2SD2008
--80V,
2SD2008.
TRANSISTOR BO 346
2SD2008
2SB1332
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BUK202-S0Y
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK202-S0Y TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured
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BUK202-S0Y
BUK202-50Y
BUK202-5QY
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NF NPN Silicon Power transistor TO-3
Abstract: transistor bf 458
Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA806T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE685 Die in a 2 mm x 1.25 mm package PACKAGE O UTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz 2.1 ± 0.1
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NE685
UPA806T
UPA806T
24-Hour
NF NPN Silicon Power transistor TO-3
transistor bf 458
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ml4861is-6
Abstract: 4046 IC circuit diagram
Text: October 1996 Micro Linear ML4861 Low Voltage Boost Regulator GENERAL DESCRIPTION FEATURES The ML4861 is a boost regulator designed for D C to DC conversion in 1 to 3 cell battery powered systems. The combination of BiCM OS process technology, internal synchronous rectification, variable frequency operation,
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ML4861
ML4861
ml4861is-6
4046 IC circuit diagram
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE681M03 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M03 NEW M03 PACKAGE: • S m allest tra n sisto r o u tlin e pa ckag e ava ila ble • Low pro file /0 .5 9 mm package height • Flat lead style fo r be tte r RF p e rfo rm an ce
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NE681M03
NE681
24-Hour
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Untitled
Abstract: No abstract text available
Text: TRANSISTOR ARRAY UPA101G CONNECTION DIAGRAM FEATURES Top View BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: (9 G H z S in gle T ransisto rs) UPA101G OUTSTANDING 7 hFE LINEARITY SMALL PACKAGE _ 1 TAPE AND REEL PACKAGING OPTION AVAILABLE 6 _ 1 1-
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UPA101G
UPA101G
UPA101G-E1
2500/REEL
34-6393/FAX
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abzd
Abstract: ABZD SOT23-5
Text: High-Voltage, Low-Power Linear Regulator for Notebook Computers _ Features ♦ Low Cost ♦ 4V to 28V Input Range ♦ 8|iA max Quiescent Supply Current ♦ <1(jA Shutdown Supply Current ♦ 3.3V or 5V, Pin-Selectable Output
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MAX1615
OT23-5
abzd
ABZD SOT23-5
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POWER SUPPLY BTS SIEMENS
Abstract: 7J40 BTS432D2 E3043 GPT051B5 Q67060-S6201-A2 siemens 3t
Text: DH flEBSbüS 00fll4fl3 S41 S IE M E N S PROFET B T S 4 3 2 D 2 Smart Highside Power Switch P ro d u ct S um m ary F eatures • Load dump and reverse battery protection1 80 Vi.oad dump • Clamp of negative voltage at output Vbb- VtouT Avalanche Clamp 58
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BTS432D2
A235L
O-220AB/5
Q67060-S6201-A2
GPT051B5
O-22QAB/5,
E3043
E3043
Q67060-S6201
POWER SUPPLY BTS SIEMENS
7J40
BTS432D2
GPT051B5
Q67060-S6201-A2
siemens 3t
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BSX19 equivalent
Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868
Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small
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OT-23
BSX19 equivalent
BC350
bc107
BFW63
bcw17
SHORT DATA ON 2N744
transistor BC287
2N3020
BC451
2N2868
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TC7212
Abstract: binary to led display decoder
Text: TELEDYNE COMPONENTS 3 bE D ÔSlVbGS DDG7707 b TSC -T-S M “7 WTELEDYNE COMPONENTS TC7211AM TC7212AM BUS COMPATIBLE 4-DIGIT CMOS DECODER/DRIVER FEATURES GENERAL DESCRIPTION TC7211AM LCD DRIVER The TC7211AM (LCD Decoder/driver) and TC7211AM are CMOS direct drive, 4-digit, 7-segment display decoder
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DDG7707
TC7211AM
TC7212AM
TC7211AM
28-segment
TC7211A
TC7212AM
TC7212
binary to led display decoder
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1316c
Abstract: nec uPC 1316c PC1316C c1316c mpc1316c uPC1316C 36CW transistor P1 P nec 1316c nec+1316c
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT / / P C I 316 C DUAL AUDIO POWER AMPLIFIER D E SC R IPTIO N The ¿ PC1316C is a dual audio pow er a m p lifie r in a 14-lead dual in line plastic package, and designed fo r portable audio sets. F E A TU R E S Wide operating voltage range. V c c = 3 t o 1 6 V
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uPC1316C
14-lead
PC1316C
1316c
nec uPC 1316c
PC1316C
c1316c
mpc1316c
36CW
transistor P1 P
nec 1316c
nec+1316c
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IAO5 Sharp
Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The
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Q60103-
thS10
to3530
to4600
to4600
IAO5 Sharp
free transistor equivalent book 2sc
siemens transistor asy 27
Diode BAY 61
TRANSISTOR BJ 131-6
tesla typ 202 thyristor
Tesla
z1072
HALL EFFECT 21E
z1071
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