TRANSISTOR BU 210 Search Results

TRANSISTOR BU 210 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR BU 210 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: BU _ Z80A PowerM OS transistor N AUER PHILIPS/DISCRETE OLE D • bbSBTBl □ 014S4CI T ■ T -S 9 -H May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	014S4C BUZ80A_ BUZ80A T-39-11	PDF
MTPBP10 Abstract: UL-44 l44 transistor transistor L44 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet B U L44 * BU L44F* SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications •Motorola Pffcr#d Dtvtc* POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS The BUL44/BUL44F have an applications specific state-of-the-art die designed	OCR Scan	BUL44/BUL44F MTPBP10 UL-44 l44 transistor transistor L44	PDF
BUH713 Contextual Info: SGS-THOMSON IM O e œ iL i © « BU H 713 HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . HIGH VOLTAGE CAPABILITY . U.L. RECOGNISED ISOWATT218 PACKAGE U.L. F ILE # E81734(N APPLICATIONS: . HORIZONTAL DEFLECTION FOR COLOUR	OCR Scan	ISOWATT218 E81734 BUH713	PDF
L146F Contextual Info: MOTOROLA Order this document by BUL146/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet BUL146* BU L146F* SW ITCH MODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications ‘ Motorola Preferred Device The BUL146/BUL146F have an applications specific s ta te -o f-th e -a rt die designed	OCR Scan	BUL146/D BUL146* L146F* BUL146/BUL146F BUL44F 221D-02 O-220 L146F	PDF
V103 TRANSISTOR Abstract: BUZ80A T0220AB V103 buz80 Contextual Info: PowerM OS transistor_ BU Z80A _ N AMER PHI LI PS /D I SC RE T E DtE D • ^53131 GOmSMT ~ T ■ T - - S 9 - I I May 1987 G EN ER A L DESCRIPTION N-channel enchancem ent m ode field-effect pow er transistor in a plastic envelope. T he device is intended for use in	OCR Scan	BUZ80A_ T0220AB; BUZ80A 00mSS5 T-39-11 V103 TRANSISTOR BUZ80A T0220AB V103 buz80	PDF
m605 Abstract: 1di200 m602 ic 6DI30B-050 Contextual Info: Q BIPOLAR TRANSISTOR MODULES Ratings and Specifications 1400 volts class pow er transistor m odules • P o w e r tra n sisto rs and free w h e e l d io d e s are bu ilt into o n e package. • T e rm in a l la yo u t in w h ic h driv e w irin g and p o w e r w irin g d o not c o m e accross.	OCR Scan	2DI30A-140 2DI100A-140 1DI200A-140 2DI200A-020 m605 1di200 m602 ic 6DI30B-050	PDF
PPCP Abstract: transistor BU 210 SS TRANSISTOR namur npn transistors,pnp transistors transistor DJ marking transistor BU 110 NPCP dj bk Contextual Info: Proximity Sensors Inductive ABS Housing Types DJ, Ø 77 and EI, Ø 77 • ABS housing, Ø 77 mm • Sensing distance: 40 mm • Power supply: 8.2 VDC NAMUR 24 VDC • Output: Namur (DIN 19234) Transistor NPN or PNP, make or break switching • Protection: Reverse polarity	Original	DJ40/EI PPCP transistor BU 210 SS TRANSISTOR namur npn transistors,pnp transistors transistor DJ marking transistor BU 110 NPCP dj bk	PDF
TDA 4600-2 Abstract: Q63100-P2462-J29 siemens PTC thermistor j29 2501 optocoupler smps control ic with 6 pin sip TDA 4601 Self Oscillating Flyback Converters P2462-J29 Self-Oscillating Flyback Converters Q63100 Contextual Info: S IE M E N S Control ICs for Switched-Mode Power Supplies TDA 4601 Bipolar IC Features • • • • • Direct control of the switching transistor Low start-up current Reversing linear overload characteristic Base current drive proportional to collector current	OCR Scan	Q67000-A2379 4601-D Q67000-A2390 P-DIP-18 4601/D /125V TDA 4600-2 Q63100-P2462-J29 siemens PTC thermistor j29 2501 optocoupler smps control ic with 6 pin sip TDA 4601 Self Oscillating Flyback Converters P2462-J29 Self-Oscillating Flyback Converters Q63100	PDF
VEB mikroelektronik Abstract: Mikroelektronik Information Applikation mikroelektronik Heft 12 Radio Fernsehen Elektronik 1977 Heft 9 information applikation information applikation mikroelektronik mikroelektronik DDR Halbleiterbauelemente DDR aktive elektronische bauelemente ddr mikroelektronik Heft Contextual Info: m B Ik i^ ts je le l-c te n o r iil-c information Applikation m l^ o e le l-c fe n a riil-c Information Applikation H EFT 17 LEISTUNGSELEKTRONIK 4 Die sicheren A rbeitsbereiche Leistungsschalttransistoren VEB MIKROELEKTRONIK „VARLIIE8KNECHT“57AHNSDORP	OCR Scan	57AHNSDORP VEB mikroelektronik Mikroelektronik Information Applikation mikroelektronik Heft 12 Radio Fernsehen Elektronik 1977 Heft 9 information applikation information applikation mikroelektronik mikroelektronik DDR Halbleiterbauelemente DDR aktive elektronische bauelemente ddr mikroelektronik Heft	PDF
IR 92 0151 Abstract: transistor BU 109 bu326 t 326 Transistor transistor BU 184 Contextual Info: MO TO RO LA SC XSTRS/R F 12E D \| b3b?2S4 QGâMflQâ 2 \| MOTOROLA SEMICONDUCTOR TECHNICAL DATA 6 AM PERES HIGH VO LTAGE NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS . . . Designed far use in the switch-mode power supplies of colour television receivers.	OCR Scan	AN415A) IR 92 0151 transistor BU 109 bu326 t 326 Transistor transistor BU 184	PDF
transistor 5BM Abstract: BUK443 BUK443-60A BUK443-60B Contextual Info: N AMER PHIL IPS /DISCRETE bTE D m ^^ 53^31 0 D 3 D5 1 S ÔS 5 H A P X Philips Sem iconductors Product Specification PowerMCS transistor G E N E R A L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic fuil-pack envelope. The device is Intended for use In	OCR Scan	0D3D51S BUK443-60A/B PINNING-SOT186 BUK443 transistor 5BM BUK443-60A BUK443-60B	PDF
transistor BU 102 Abstract: bk 101 transistor SS TRANSISTOR DIN19234 Contextual Info: Proximity Sensors Inductive ABS Housing Type DU, Fork-shaped • Fork-shaped ABS housing • Slot sizes: 3.5, 5, 6, 10 mm • Power supply: 8.2 VDC NAMUR 24 VDC • Output: NAMUR (DIN 19234) Transistor NPN, make switching • Protection: Reverse polarity	Original		PDF
N493 Abstract: basf 100cjd Contextual Info: MOTORCLA SC XSTRS/R F 12E D \| b3fc,72SM O G ä M m M T \| T- 33-/3 MOTOROLA BUX47 BUX47A SEMICONDUCTOR TECHNICAL DATA 9 AM PERES SWITCHMODE llA SERIES NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS 400 AND 450 V O LT S BVCEO 160 WATTS 850 * 1000 V (BVCEX)	OCR Scan	BUX47 BUX47A N493 basf 100cjd	PDF
w016 Abstract: SL1018 3By marking bu 11 af AMP MODU 2 Marking W016 mute detector muting SSG 23 TRANSISTOR V6 marking code diode Contextual Info: SL1018 Semiconductor FM IF SYSTEM Description The SL1018 has versatile muting characteristics and allows receiver designers to realize the muting performance according to their design concept. Functions • FM IF Amplifier/Limiter • Quadrature Detector • AFC Clamp • AGC Drive	Original	SL1018 SL1018 400Hz -75KH -75KHz KSI-W016-000 w016 3By marking bu 11 af AMP MODU 2 Marking W016 mute detector muting SSG 23 TRANSISTOR V6 marking code diode	PDF

up/tic 236b Contextual Info: BL9180 Dual,3 Dual,300mA UltraUltra-low Noise CMOS LDO Regulator FEATURES DESCRIPTION Up to 300mA Output Current Each LDO The BL9180 dual, low noise, low-dropout regulator Dual Shutdown Pins Control Each Output supplying up to 300mA output current at each	Original	BL9180 300mA BL9180 220mV 300mA up/tic 236b	PDF
transistor kt 326 Abstract: transistor KT 3107 Belcanto ST 3010 transistor BU 5027 J 5027-R atakassette SANYO CTP 4360 transistor kt 925 Transstereo 2401.00 transistor KT 816 Contextual Info: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N O F E R N S E H E N ir .f -t j \| R A P io -teievlslon JUNI/JULI 1960 6/7 SKITB 1-8 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Informationen für den Fernsehgeräteservice	OCR Scan		PDF
RCA transistor 40410 Abstract: RCA transistor 40319 RCA transistor 40406 RCA 40872 rca 40636 rca 40634 rca 40872 transistor rca 2N3771 power circuit RCA 40595 transistor rca 40410 Contextual Info: H IG H -V O LT A G E N-P-N & P-N-P POW ER T Y P E S 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 75 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V	OCR Scan	lc-30A 130x130 180x180 210x210 bu106 2n5840 2n5240 2N6510 2N6308 2n5805 RCA transistor 40410 RCA transistor 40319 RCA transistor 40406 RCA 40872 rca 40636 rca 40634 rca 40872 transistor rca 2N3771 power circuit RCA 40595 transistor rca 40410	PDF
Contextual Info: MITSUBISHI RF POWER MODULE M57774 220-225MHZ, 12.5V, 30W, FM MOBILE RADIO Dimensions in mm OUTLINE DRAWING PIN : Pin VCC1 ®VCC2 ©PO ®GND : : : : : RF INPUT 1st. DC SUPPLY 2nd. DC SUPPLY RF OUTPUT FIN H2 ABSOLUTE MAXIMUM RATINGS Tc = 25 °C unless otherwise noted	OCR Scan	M57774 220-225MHZ, Parame90	PDF
pt100 LAPP Abstract: IRE 9530 transistor BU 210 pt100 burr brown PT100 ICE 751 Contextual Info: B U R R -B R O W N I XTR105 1 www. bu rr-b rown.com/d ata boo k/XTR105. htm I 4-20mA CURRENT TRANSMITTER with Sensor Excitation and Linearization FEATURES APPLICATIONS • LOW UNADJUSTED ERROR • INDUSTRIAL PROCESS CONTROL • TWO PRECISION CURRENT SOURCES	OCR Scan	XTR105 k/XTR105. 4-20mA 30nAp-p 110dBmin 14-PIN SO-14 Pt100 pt100 LAPP IRE 9530 transistor BU 210 pt100 burr brown PT100 ICE 751	PDF
Contextual Info: B U R R -B R O W N XTR106 4-20mA CURRENT TRANSMITTER with Bridge Excitation and Linearization FEATURES APPLICATIONS • LOW TOTAL UNADJUSTED ERROR • PRESSURE BRIDGE TRANSMITTER • 2.5V, 5V BRIDGE EXCITATION REFERENCE • STRAIN GAGE TRANSMITTER • 5.1V REGULATOR OUTPUT	OCR Scan	XTR106 4-20mA i25ppm 25fiV/Â 110dBmin 14-PIN SO-14 D033b22 ZZ235	PDF
transistor 123 DL Abstract: F6-15R10K Contextual Info: 7 = 3 9 - 3 / F 6 - 15R 10 K EU P E C SEE Transistor Itansistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Vces Maximum rated values 1000 V 15 A le D • 3403217 D 000270 70S «UPEC Thermische Eigenschaften Thermal properties DC, pro Baustein / per module	OCR Scan	F6-15R10K 34d32ci7 transistor 123 DL F6-15R10K	PDF
Contextual Info: For Immediate Assistance, Contact Your Local Salesperson B U R R -B R O W N « \| b b \| XTR110 PRECISION VOLTAGE-TO-CURRENT CONVERTER/TRANSMITTER FEATURES APPLICATIONS • 4mA TO 20mA TRANSMITTER • INDUSTRIAL PROCESS CONTROL • SELECTABLE INPUT/OUTPUT RANGES:	OCR Scan	XTR110 10-turn LM324 IR513( IRFF9113 200mA 17313fcj5	PDF
Contextual Info: 7 = 3 9 - 3 / F 6 - 15R 10 K EU P E C SEE Transistor D-ansistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Vces Maximum rated values 1000 V 15 A le D • 3403217 D 000270 70S «UPEC Thermische Eigenschaften Thermal properties DC, pro Baustein / per module	OCR Scan		PDF
Contextual Info: 15 ÛEC PLE SS EY SEMICONDS D 3 7 böS EE 0D0Ô313 M « P L S B • PLESSEY Semiconductors. ZN447/ZN448/ZN449 " P - S 1 - I0 - Q 2 8-BIT MICROPROCESSOR COMPATIBLE A-D CONVERTERS The ZN447, ZN448 and ZN449 are 8-bit, successive approximation A-D converters designed for easy interfacing	OCR Scan	ZN447/ZN448/ZN449 ZN447, ZN448 ZN449	PDF

TRANSISTOR BU 210 Search Results

TRANSISTOR BU 210 Result Highlights (5)

TRANSISTOR BU 210 Datasheets Context Search

MTPBP10

BUH713

L146F

V103 TRANSISTOR

m605

PPCP

TDA 4600-2

VEB mikroelektronik

IR 92 0151

transistor 5BM

transistor BU 102

N493

w016

up/tic 236b

transistor kt 326

RCA transistor 40410

pt100 LAPP

transistor 123 DL