TRANSISTOR BUZ10 Search Results

BUZ10

Contextual Info: N AUER PHILIPS/DISCRETE OLE D • PowerMOS transistor bb53T31 0014331 1 ■ BUZ10 r~ 1 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

transistor BUZ10

Abstract: K 3911 BUZ10 transistor k 3911 D143 T0220AB
Contextual Info: N AMER PHILIPS/DISCRETE PowerMOS transistor □LE D • bbS3T31 0014301 B U Z 10 ■ “T — 3 7 — 11 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

smd transistor 43t

Abstract: marking code ya SMD Transistor MARKING SMD 43t SMD MARKING CODE 43t smd 43t transistor BUZ102S smd code book transistor 43t SMD E3045 G1333
Contextual Info: Infineon , m proved technologies BUZ102S ' SIPMOS Power Transistor Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance ñ D S o n • Avalanche rated Continuous drain current b CO Features 55 V 0.018

smd transistor marking 7j

Abstract: TRANSISTOR SMD MARKING CODE c015 TRANSISTOR SMD MARKING CODE BS s BUZ103S E3045 Q67040-S4009-A2 diode marking code MU marking 684 diode smD
Contextual Info: Infineon BUZ103S ,y e d Rosi0"' ’ technologie» im p f SIPMOS® Power Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance ñ D S o n • Avalanche rated Continuous drain current

BUZ100

Abstract: BSS10
Contextual Info: SIEMENS BUZ100L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dw'df rated • Ultra low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type Vbs BUZ100L 50V b 60 A Boston

Contextual Info: SIEMENS BUZ 101 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/df rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type Vds BUZ101 50 V 29 A flbSfon Package Ordering Code

702 TRANSISTOR smd

Abstract: smd 58a transistor 6-pin transistor 702 F smd TRANSISTOR SMD 702 N 702 L TRANSISTOR smd 702 Z TRANSISTOR smd 702 N smd transistor transistor 702 smd SMD transistor code 702 702 transistor smd code
Contextual Info: SIEMENS BUZ 101L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv^di rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ101L Vbs 50V *> 29 A RaS on

BUZ102

Abstract: smd transistor py
Contextual Info: SIEMENS BUZ 102 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dvfdt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type Vbs BUZ102 50 V b 42 A flbston Package Ordering Code

transistor SMD t70

Abstract: BUZ104
Contextual Info: SIEMENS BUZ 104 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/df rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ104 Vfcs Io flbSfon Package Ordering Code 50 V

SmD TRANSISTOR 42T

Abstract: smd 42t
Contextual Info: SIEMENS BUZ 100 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/df rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type Vbs >D ffDS on Package Ordering Code BUZ100

7C SMD TRANSISTOR

Contextual Info: SIEMENS BUZ 101 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dWdt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ101 Vbs 50 V b ^>S on Package Ordering Code 29 A

Contextual Info: SIEMENS BUZ 104L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/df rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ104L Vos 50 V b 17.5 A flDS on

smd transistor 43t

Abstract: buz1025 MARKING SMD 43t st smd diode marking code BUZ SMD DIODE BOOK smd marking wds P-T0263-3-2 infineon 3330 BUZ 1025 E304
Contextual Info: Infineon , m proved te c h n o lo g ie s BUZ102S ' SIPMOS Power Transistor Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current CO Features 55 V ñ DS on 0.018 Í 2

LD 757 ps

Abstract: smd code cfa
Contextual Info: SIEMENS BUZ104L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dw/df rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ104L l'os 50 V fa 17.5 A ffesíon

Contextual Info: SIEMENS BUZ10S2 Not for new design SIPMOS @Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ10S2 ^bs 60 V to HDS on Package Ordering Code 23 A 0.07 Í 2 TO-220 AB C67078-S1300-A7 Maximum Ratings Parameter Symbol Values Continuous drain current

m574

Contextual Info: BUZ 103 SIEMENS SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • du/df rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type Vbs BUZ103 50 V Id 40 A ^DS on Package Ordering Code

BUZ100

Contextual Info: SIEMENS BUZ 100L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/df rated • Ultra low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type Vbs BUZ100L 50 V 4j 60 A

Contextual Info: SIEMENS BUZ103AL SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • d tfd f rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ103AL Vbs 50 V to 35 A ^bs<on

buz10

Contextual Info: / = 7 SGS-THOMSON ^TÆ, M œ m itgTM O igi BUZ10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ADVANCE DATA TYPE V DSS R DS on BUZ10 50 V 0.08 Q 20 A • HIGH SPEED SWITHING • LOW Rds (0N) • EASY DRIVE FOR COST EFFECTIVE APPLICATIONS. INDUSTRIAL APPLICATIONS:

Contextual Info: Æ 7 SGS-THOMSON BUZ10A M g[M5iO=EgT[!mD(g§ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^ D S (o n BUZ10A 50 V 0.12 Ö 17 A • HIGH SPEED SWITCHING • LOW Rds (0N) • EASY DRIVE FOR COST EFFECTIVE APPLICATIONS. INDUSTRIAL APPLICATIONS:

GD 743 Siemens

Contextual Info: SIEMENS BUZ 103 AL SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/df rated • Low on-resistance • 175 °C operating temperature • also In TQ-220 SMD available Type BUZ103AL ^bs 50 V b 35 A ^DS on

BUZ100

Abstract: to 220 smd BUZ100 SIEMENS
Contextual Info: SIEMENS BUZ 100 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • d tfd f rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ100 Vbs 50 V b 60 A f%>S on 0.018 Q Package

schematic diagram reverse forward motor

Contextual Info: i^ 7 SCS-THOMSON BUZ 10 ^ 7 #, HD @ilLI OT©iD©Ì N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ADVANCE DATA TYPE V DSS RDS(on BUZ10 50 V 0.08 Q Id 20 A • HIGH SPEED SWITHING • LOW R ds (0N) • EASY DRIVE FOR COST EFFECTIVE APPLICATIONS. INDUSTRIAL APPLICATIONS'.

buz102

Contextual Info: SIEMENS BUZ 102 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/d/ rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 Pin 2 Type Vbs BUZ102 50 V b 42 A Pin 3 D G S ^DS on