TRANSISTOR BUZ71 Search Results

BUZ71 dc to ac

Abstract: transistor buZ71 BUZ71 T0220AB buz71 philips IR 5331
Contextual Info: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor • t.t,S3T31 0014405 5 BUZ71 ^ May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , m otor control, welding,

buz71a

Contextual Info: PowerMOS transistor _ N AMER PHILIPS/DISCRETE OLE D BUZ71A • hhS3131 D D m M C H 5 ■ T-3 1 - 1/ May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

transistor buz71a

Abstract: BUZ71 BUZ71A T0220AB
Contextual Info: PowerMOS transistor N A M ER BUZ71A P H IL IP S /D IS C R E T E OLE D • ^ 5 3 ^ 3 1 O G I M MCH 5 T-97-II May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: N AMER PHILIPS/DISCRETE ObE D • bbS3T31 DD144D2 5 ■ PowerM OS transistor BU Z71 |j May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BUZ71A

Abstract: TB334
Contextual Info: BUZ71A Data Sheet December 2001 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET Features • 13A, 50V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,

BUZ71 application

Abstract: BUZ71 TB334
Contextual Info: BUZ71 Data Sheet December 2001 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET Features • 14A, 50V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,

Contextual Info: , One, TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 BUZ71 BUZ71A Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FETs 12 AMPERES •DSIon) 0.12 OHMS 60 VOLTS

Contextual Info: BUZ71A Data Sheet 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET June 1999 File Number 2419.2 Features • 13A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.120Ω (BUZ71 field effect transistor designed for applications such as

Contextual Info: BUZ71 Semiconductor Data Sheet June 1999 14A, 50 V, 0.100 Ohm, N-Channel Power MOSFET File Number 2418.2 Features • 14A, 50V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,

BUZ71

Abstract: BUZ71A TB334 TO 220AB Mosfet TA9770 transistor buz71a
Contextual Info: BUZ71A Semiconductor Data Sheet 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET October 1998 File Number 2419.1 Features • 13A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.120Ω (BUZ71 field effect transistor designed for applications such as

BUZ71 application

Abstract: BUZ71 TB334
Contextual Info: BUZ71 Data Sheet June 1999 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching

Contextual Info: BUZ71A S em iconductor Data Sheet June 1999 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET File Number 2419.2 Features • 13A, 50V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,

transistor buz71a

Abstract: BUZ71A TB334
Contextual Info: BUZ71A Data Sheet June 1999 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching

transistor 647

Contextual Info: rZT SGS-THOMSON * 7M. [ÄliSimitgTßMOgS BUZ71 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIETHICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 9 5 x 9 5 mils Al A u /C r/N i/A u

BUZ71A

Abstract: 0120S
Contextual Info: in t e is il BUZ71A Data Sheet June 1999 13A, 50V, 0.120 Ohm, N -Channel Power M O SFET File Num ber 2419.2 Features • 13A, 50V This is an N-Channel enhancem ent mode silicon gate power field effect transistor designed for applications such as • rDS ON ~ 0.120S2

BUZ71A

Abstract: transistor buz71a din IEC 68-1
Contextual Info: SGS-THOMSON ^ 7 # M Ê IS M IL II ? » *! {Z T BUZ71A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS BUZ71A 50 V ^DS on 0.12 fi 'd 13 A • ULTRA FAST SWITCHING • LOW DRIVE ENERGY FOR EASY DRIVE • COST EFFECTIVE INDUSTRIAL APPLICATIONS:

BUZ71

Abstract: diode din 4147
Contextual Info: BUZ71 {£} HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Package Features T O -2 2 0 A B TOP VIEW • 14A, 50V • rDS on = 0-1 n • SOA is Power-Dissipation Limited DRAIN (FLANGE) u • Nanosecond Switching Speeds • Linear Transfer Characteristics

BUZ71A

Abstract: BUZ71
Contextual Info: BUZ71A O HARRIS N -Channel Enhancem ent-M ode Power Field-Effect Transistor August 1991 Package Features T0-220AB • 13A, 50V TO P VIEW • rD S on = 0 -1 2 f l • SOA is Power-Dissipation Limited DRAIN (FLANGE) • Nanosecond Switching Speeds u • Linear Transfer Characteristics

transistor 647

Abstract: BUZ71 PVAPOX 647 transistor
Contextual Info: 30E J> • 7T2T2_37 DO 3D 1Sb 3 M ^ ^ O i - S G S -T H O M S O N s 6 - s-thomson = L[I(g¥GM0 S BUZ71 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE:

552 MOSFET TRANSISTOR motorola

Abstract: 552 transistor motorola Z71A
Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA BUZ71 BUZ71A Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FETs 12 AMPERES RDS on = 0.10 and 0.12 OHMS 50 VOLTS T h e s e T M O S III P o w e r FETs a re d e s ig n e d f o r lo w

BU271

Abstract: TA9770
Contextual Info: BUZ71 intefeil Ju n e 1999 D ata S h e e t F ile N u m b e r 2 4 1 8 .2 Features 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET • 14A, 5 0V This is an N -Channel enhancem ent mode silicon gate power • rDS ON = 0.100S2 field effect transistor designed for applications such as

PVAPOX

Contextual Info: S C S -T H O M S O N IIL IM « ! » BUZ71 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 95 x 95 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION: P-Vapox BONDING PAD SIZE:

BUZ71L

Abstract: BUZ-71L T39 diode S3848 Z71L
Contextual Info: MOTOROLA SC XSTRS/R F (□3b7254 5bE.D Q D T C HC m b Order this data sheet by BUZ71L/D MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA BU Z71L MTP14IM05L Pow er Field Effect Transistor IM-Channel Enhancem ent-Mode Silico n Gate These T M O S Pow er FETs are designed for low voltage,

cp4071

Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154