TRANSISTOR BW 51 Search Results

TCHT1130

Abstract: Ex-90C
Contextual Info: J TELEFUNKEN ELECTRONIC 4ME D HH fi^GO^ti 001117= T E i ALG6 Optocouplers ' T ' H I - $ "J? Standard Opto Isolators w ith Transistor Output Package Type C haracteristics UL-recognized: CTR File No. E 76414 Dimensions see page 56 - _ i j bW 1T T m N ; liJ

DIL-4044

Abstract: Dionics 8C27 4044
Contextual Info: DIONICS, INC. Phone: 516 997-7474 Fax: (516) 997-7479 Website: www.dionics-usa.com 65 Rushmore Street Westbury, NY 11590 DIL-4044 MATCHED DIELECTRICALLY ISOLATED DUAL NPN TRANSISTORS Package Layout: Description: Dual NPN transistors, Dielectrically Isolated,

7474 ic

Abstract: IC 7474 IC 7474 datasheet 4044 transistor nf 7474 IC datasheets dionics 7474 features of ic 7474 10PA
Contextual Info: DIONICS, INC. Phone: 516 997-7474 Fax: (516) 997-7479 Website: www.dionics-usa.com 65 Rushmore Street Westbury, NY 11590 DIL-4044 MATCHED DIELECTRICALLY ISOLATED DUAL NPN TRANSISTORS Package Layout: Description: Dual NPN transistors, Dielectrically Isolated,

7474 ic

Abstract: IC 7474 IC 7474 datasheet 7474 IC datasheets datasheet of 7474 ic 7474 7474 ic datasheet IC 7479 Dionics pin IC 7474
Contextual Info: DIONICS, INC. Phone: 516 997-7474 Fax: (516) 997-7479 Website: www.dionics-usa.com 65 Rushmore Street Westbury, NY 11590 DI-4044 SOIC MATCHED DIELECTRICALLY ISOLATED DUAL NPN TRANSISTORS Package Layout: Dielectrically Isolated Small 8-pin SOIC Package High Operating Temperature

Contextual Info: AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

transistor 7350 A

Abstract: 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A transistor 7350
Contextual Info: AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

100B100JCA500X

Abstract: AGR19090E AGR19090EF AGR19090EU JESD22-C101A R190 19090
Contextual Info: AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

transistor 7350

Abstract: 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A transistor z14 L
Contextual Info: Preliminary Data Sheet March 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

2N4261

Abstract: 2N4261UB
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/511 DEVICES LEVELS 2N4261 2N4261UB JAN JANTX JANTXV

100B100JCA500X

Abstract: AGR19090E AGR19090EF AGR19090EU CDR33BX104AKWS JESD22-C101A
Contextual Info: Preliminary Data Sheet March 2004 AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

100B100JCA500X

Abstract: AGR19090E AGR19090EF AGR19090EU CDR33BX104AKWS JESD22-C101A
Contextual Info: Preliminary Data Sheet April 2004 AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

transistor 7350

Abstract: agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A j496
Contextual Info: Preliminary Data Sheet April 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

smd code HF transistor

Abstract: BLF3G21-6
Contextual Info: BLF3G21-6 UHF power LDMOS transistor Rev. 01 — 25 June 2008 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical class-AB RF performance

MURATA VCO Series

Abstract: LQN2A transistor AFR 16 transistor afr 22 murata vco module transistor bw 51 fujitsu power amplifier GHz vco fujitsu 900mhz taiyo yuden transistor 8P
Contextual Info: D S 0 4 -2 1 6 0 0 -3 E . MB551 1 : DATA SHEET ASSP for DTS BIPOLAR Prescaler with VCO Dual-Modulus, 1.0 GHz • DESCRIPTION The MB551 is a dual-modulus prescaler incoporating a voltage controlled oscillator (VCO) and is used with 900-MHz band frequency synthesizers. The MB551 consists of: a Colpitts oscillator with grounded base capa­

Contextual Info: 2 'S » FUJITSU July 1990 Edition 1.0 DATA SH EET • MB551 1.0GHz DUAL MODULUS PRESCALER 1.0 GHz DUAL MODULUS PRESCALER CONTAINS VCO CIRCUIT The Fujitsu MB551 is a dual m odulus prescaler on-chip VCO Voltage controlled oscillator designed for use in 900 MHz frequency synthesizer application.

LMX2332LTM

Abstract: HPE3610A LMX2332L
Contextual Info: LMX2332LTM EVALUATION BOARD OPERATING INSTRUCTIONS General Description The LMX2332LTM Evaluation Board simplifies evaluation of the LMX2332L 1.2 GHz/510 MHz PLLatinum dual frequency synthesizer. The board enables all performance measurements with no additional support circuitry.

mb551

Abstract: colpitts oscillator construction TEL Prober MURATA VCO Series Fujitsu 10ghz transistor UCN103C sin 3545 transistor
Contextual Info: July 1990 Edition 1.0 FUJITSU DATA SHEET MB551 1.0GHz DUAL MODULUS PRESCALER 1.0 GHz DUAL MODULUS PRESCALER CONTAINS VCO CIRCUIT The Fujitsu MB551 is a dual modulus prescaler on-chip VCO Voltage controlled oscillator designed for use in 900 MHz frequency synthesizer application.

LQN2A

Abstract: MURATA VCO Series murata vco module taiyo 88-R
Contextual Info: ASSE for DTS preicaler w ffiVG Q Dual-MoëutuSHîOGHz • DESCRIPTION The MB551 is a dual-modulus prescaler incorporating a voltage controlled oscillator (VCO) used for 900-MHz band frequency synthesizers. The MB551 consists of: a Col pitts oscillator with grounded base capacitor, a buffer

Contextual Info: BLF3G21-6 UHF power LDMOS transistor Rev. 2 — 11 April 2013 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical class-AB RF performance

CA3600E

Abstract: 2n3055 pinout terminals of 2n3055 2N3055 inverter schematic diagram 2n3055 voltage regulator HCA10014 1A Dual Power Operational Amplifier t 2N3055 1N914 CA3085
Contextual Info: HCA10014 Data Sheet 15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output HCA10014 op amp combines the advantage of both CMOS and bipolar transistors. Gate protected P-Channel MOSFET PMOS transistors are used in the input circuit to provide very high input

Contextual Info: CALEX MANUFACTURING CO S2E D I IflllESG GDGIGBT 2^7 ICEX Models 166 and 167 Bridgesensors 2401 Stanwell Drive, Concord, CA 94520-4841 510 687-4411 (800)542-3355 BRIDGE POWER SUPPLY FAX: (510) 687-3333 7 1 -U -0 7 The bridge power supply is an adjustable regulated

Contextual Info: Fairchild Im aging Sensors CCD326A 256/512-B it Analog Shift Register Charge Coupled Device FEATURES • Electrically variable analog delay line for audio and video applications. ■ Excellent bandwidth at video and audio rates due to burled channel technology.

block diagram of ca3130

Abstract: CA3130 pin diagram of IC ca3130 IC1 CA3130 CURRENT TO VOLTAGE CONVERTER ca3130 equivalent Ic2 ca3130 about the IC ca3130 IC1 CA3130 CA3130T CA3600E
Contextual Info: CA3130, CA3130A Data Sheet 15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output CA3130A and CA3130 are op amps that combine the advantage of both CMOS and bipolar transistors. Gate-protected P-Channel MOSFET PMOS transistors are used in the input circuit to provide very-high-input

J300 Siliconix

Abstract: 10112N 2n Siliconix FET U257 dual FET 2N4393 2N4416 2N5912 J300 U232 Siliconix Application Note
Contextual Info: z> B Siliconix g APPLICATION NO TE FETs for Video Amplifiers INTRODUCTION For this analysis the gate source leakage resistance has been ignored due to its high value. Redrawing the input equivalent circuit as a simple parallel RC combination results in The field-effect transistor lends itself well to video amplifier