TRANSISTOR C 2001 Search Results

TRANSISTOR C 2001 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR C 2001 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
KTA701E Abstract: No abstract text available Text: SEMICONDUCTOR KTA701E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES C A ᴌHigh pairing property in hFE. 1 6 2 5 3 4 A1 ᴌExcellent temperature response between these 2 transistor. C ᴌA super-minimold package houses 2 transistor.	Original	KTA701E KTA701E	PDF
KTA501E Abstract: No abstract text available Text: SEMICONDUCTOR KTA501E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES C A ᴌHigh pairing property in hFE. 1 2 DIM A 5 A1 ᴌExcellent temperature response between these 2 transistor. C ᴌA super-minimold package houses 2 transistor.	Original	KTA501E KTA501E	PDF
KTC601E Abstract: No abstract text available Text: SEMICONDUCTOR KTC601E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES C A ᴌHigh pairing property in hFE. 1 2 DIM A 5 A1 ᴌExcellent temperature response between these 2 transistor. C ᴌA super-minimold package houses 2 transistor.	Original	KTC601E KTC601E	PDF
100 watt transistor Abstract: No abstract text available Text: 2001 1.0 Watt - 28 Volts, Class C Microwave 2000 MHz GENERAL DESCRIPTION CASE OUTLINE The 2001 is a COMMON BASE transistor capable of providing 1 Watts Class C, RF output power at 2000 MHz. Gold Metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor	Original	55BT-1, 100 watt transistor	PDF
transistor s11 s12 s21 s22 Abstract: NE856M02-T1-AZ NE856M02 Text: SILICON TRANSISTOR NE856M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1 1.6±0.2 C E B E 0.8 MIN DESCRIPTION The NE856M02 is an NPN silicon epitaxial bipolar transistor	Original	OT-89 NE856M02 NE856M02 transistor s11 s12 s21 s22 NE856M02-T1-AZ	PDF
an5296 Abstract: AN5296 application note AN5296 Application note CA3018 AN5296 Application of the CA3018 AN5296 Application of the CA3018 Integrated CA3018 emitter area of CA3083 CA3146 FN532 CA30 Text: CA3146, CA3146A, CA3183, CA3183A T O DU C T TE PR E O DU C L R O P S E T OB U 3 BSTIT , CData 308Sheet LE SU 86 A POSSIB 3046, CA30 CA May 2001 FN532.6 High-Voltage Transistor Arrays Features The CA3146A, CA3146, CA3183A, and CA3183 are general purpose high voltage silicon NPN transistor arrays on a	Original	CA3146, CA3146A, CA3183, CA3183A FN532 CA3183A, CA3183 CA3146A an5296 AN5296 application note AN5296 Application note CA3018 AN5296 Application of the CA3018 AN5296 Application of the CA3018 Integrated CA3018 emitter area of CA3083 CA3146 CA30	PDF
sot 23 mark AD Abstract: BCW60A BCW60B BCW60C BCW60D Text: BCW60A/B/C/D BCW60A/B/C/D General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage	Original	BCW60A/B/C/D OT-23 sot 23 mark AD BCW60A BCW60B BCW60C BCW60D	PDF
Analog devices TOP marking Information Abstract: marking B22 sot-23 BCW61A transistor cross ref fairchild sot-23 Device Marking pc Cross Reference sot23 BC TRANSISTOR SOT-23 Text: BCW61A/B/C/D BCW61A/B/C/D General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -32 Units V VCEO	Original	BCW61A/B/C/D OT-23 KST5086 OT-23 BCW61AMTF Analog devices TOP marking Information marking B22 sot-23 BCW61A transistor cross ref fairchild sot-23 Device Marking pc Cross Reference sot23 BC TRANSISTOR SOT-23	PDF
marking B22 sot-23 Abstract: bc 2001 transistor BCW61A BCW61B BCW61C BCW61D KST5086 Text: BCW61A/B/C/D BCW61A/B/C/D General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -32 Units V VCEO	Original	BCW61A/B/C/D OT-23 KST5086 marking B22 sot-23 bc 2001 transistor BCW61A BCW61B BCW61C BCW61D	PDF
FZT491A Abstract: FZT591A transistor marking 2A H DSA003675 Text: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FZT591A ISSUE 1 - DECEMBER 2001 FEATURES Low equivalent on resistance RCE sat = 350m PART MARKING DETAIL COMPLEMENTARY TYPE - FZT591A C at 1A FZT591A FZT491A E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL	Original	OT223 FZT591A FZT491A -100mA -500mA -20mA* -100mA* -50mA* FZT491A FZT591A transistor marking 2A H DSA003675	PDF
FMMTA92 Abstract: BF620 BF621 Text: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR BF621 ISSUE 3 – MARCH 2001 ✪ FEATURES * High breakdown and low saturation voltage APPLICATIONS * Suitable for video output stages in TV sets * Switching power supplies COMPLEMENTARY TYPE – BF620 C E C	Original	BF621 BF620 -200V, -30mA, -10mA, 100MHz FMMTA92 BF620 BF621	PDF
Untitled Abstract: No abstract text available Text: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BSR33 ISSUE 4 – MARCH 2001 COMPLEMENTARY TYPE – BSR43 PARTMARKING DETAILS – BR4 C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage V CBO	Original	BSR33 BSR43 Bre15mA* -500mA, -50mA* -150mA, -15mA* -100mA,	PDF
BSR33 Abstract: BSR43 Text: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BSR33 ISSUE 4 – MARCH 2001 COMPLEMENTARY TYPE – BSR43 PARTMARKING DETAILS – BR4 C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage V CBO	Original	BSR33 BSR43 Vo15mA* -500mA, -50mA* -150mA, -15mA* -100mA, BSR33 BSR43	PDF
BCX5316 Abstract: BCX5616 Text: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BCX5316 ISSUE 4 – MARCH 2001 C COMPLIMENTARY TYPE – BCX5616 PARTMARKING DETAIL – AL E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage V CBO -100 V Collector-Emitter Voltage	Original	BCX5316 BCX5616 -500mA, -50mA* -150mA, -50mA, 100MHz BCX5316 BCX5616	PDF

GT45F122 Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124 Text: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor	Original	BCE0010D S-167 BCE0010E GT45F122 gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124	PDF
2SD1481 Abstract: DSA00108835 Text: DATA SHEET SILICON POWER TRANSISTOR 2SD1481 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) • On-chip C-to-B Zener diode for surge voltage absorption	Original	2SD1481 2SD1481 DSA00108835	PDF
Untitled Abstract: No abstract text available Text: MMPQ3725 MMPQ3725 E B E B E B E C SOIC-16 B C C C C C C C NPN Quad Transistor This device is designed for high current low impedance line driver applications. Sourced from Process 26. Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter	Original	MMPQ3725 SOIC-16	PDF
BF620 Abstract: BF621 FMMTA42 Text: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR BF620 ISSUE 5 – MARCH 2001 ✪ FEATURES * High breakdown and low saturation voltages APPLICATIONS * Suitable for video output stages in TV sets * Switching power supplies COMPLEMENTARY TYPE: BF621 C E C PARTMARKING DETAIL –	Original	BF620 BF621 ELE20 100MHz FMMTA42 BF620 BF621	PDF
BSP32 Abstract: BSP42 FMMT493 Text: SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR BSP42 ✪ ISSUE 4 – MARCH 2001 COMPLEMENTARY TYPE – BSP32 PARTMARKING DETAIL – BSP42 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 90 V Collector-Emitter Voltage	Original	OT223 BSP42 BSP32 150mA, 500mA, 100mA, BSP32 BSP42 FMMT493	PDF
bcx5316 Abstract: BCX5616 Text: SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR BCX5616 ISSUE 5 – MARCH 2001 C COMPLEMENTARY TYPE – BCX5316 PARTMARKING DETAIL – BL E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 100 V Collector-Emitter Voltage	Original	BCX5616 BCX5316 500mA, 150mA, 100MHz bcx5316 BCX5616	PDF
16 pin diagram of uln 2003 Abstract: ULM2002 pin diagram of UlN2004 ic. uln 2003 uln 2003 pin diagram uln series 14 PIN IC ULN 2003 pin of ULN 2003 ULN2003 features ULN2001 Text: S ig rietics Interface - Transistor Arrays ULN 2001/2/3/4 High Voltage/ Current Darlington Transistor Arrays C O N N E C T IO N D IA G R A M G E N E R A L D E SC R IPTIO N These high-voltage, high-current D a rlirg to n transistor arrays are com prised o f seven silicon NPN D a rlington	OCR Scan	600mA ULN-2001 16 pin diagram of uln 2003 ULM2002 pin diagram of UlN2004 ic. uln 2003 uln 2003 pin diagram uln series 14 PIN IC ULN 2003 pin of ULN 2003 ULN2003 features ULN2001	PDF
E67349 Abstract: TLP630 Text: TO SH IBA TLP630 TOSHIBA PHOTOCOUPLER PROGRAMMABLE CONTROLLERS GaAs IRED & PHOTO-TRANSISTOR TLP630 Unit in mm A C/D C-IN PU T MODULE TELECOMMUNICATION The TOSHIBA TLP630 consists of a photo-transistor optically coupled to two gallium arsenide infrared emitting diode	OCR Scan	TLP630 TLP630 5000Vrms UL1577 E67349 11-7A8 E67349	PDF
2015M Abstract: 2015M-2 Text: 0182998,. ACRI AN, INC 0D D 1414 2015M D ES C R IP TIO N 15 WATTS - 28 VOLTS 2 OHz The 2015M is an internally matched, common base transistor ' capable of providing 15 Watts of C W RF output power across the 1000-2000 M Hz band. This transistor is specifically designed	OCR Scan	2015M 600mA 2015M 2015M-2	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF

Privacy Settings

TRANSISTOR C 2001 Search Results

TRANSISTOR C 2001 Result Highlights (5)

TRANSISTOR C 2001 Datasheets Context Search

KTA701E

KTA501E

KTC601E

100 watt transistor

transistor s11 s12 s21 s22

an5296

sot 23 mark AD

Analog devices TOP marking Information

marking B22 sot-23

FZT491A

FMMTA92

Untitled

BSR33

BCX5316

GT45F122

2SD1481

Untitled

BF620

BSP32

bcx5316

16 pin diagram of uln 2003

E67349

2015M

y51 h 120c