TRANSISTOR C 2026 Search Results

Contextual Info: Formosa MS NPN Transistor BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C List List. 1 Package outline. 2

SOT-23

Abstract: TRANSISTOR SMD fr 21 smd transistor ds 65
Contextual Info: Formosa MS SMD NPN Transistor BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C List List. 1 Package outline. 2

transistor T K 2056

Abstract: K 2056 transistor transistor K 2056
Contextual Info: SANYO SEMICONDUCTOR 12E CORP D | 7 T ci 7 D 7 t 1 0 0 0 S S 0 0 g 32S C 4256 SS2SC4271 Silicon Transistor Silicon Transistor ' High Voltage Switching Applications Very High-Oefinrtion CR T Display Applications JEDEC: T 022 0 package JEDEC: T0126 package High breakdown voltage

Contextual Info: MMBTA44 NPN HIGH VOLTAGE TRANSISTOR VOLTAGE POWER 400 Volts 225 mWatts FEATURES • Silicon, planar design • Collector-emitter voltage VCE = 400V • Collector current I C = 300mA • MECHANICAL DATA • Case: SOT-23, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026

Contextual Info: MMBTH10 VHF/UHF NPN SILICON TRANSISTOR 25 Volts VOLTAGE POWER SOT-23 225 mW Unit：inch mm MECHANICAL Case : SOT-23, Plastic Terminals : Solderable per MIL-STD-750, Method 2026 Approx weight : MAXIMUM RATINGS R A T IN G S YM B O L VA L UE U N IT C o lle c to r-E mi tte r Vo lta g e

TRANSISTOR FS 2025

Abstract: SILICON TRANSISTOR FS 2025 2SK775 JIS G3141 DDD3710 2052A DS-17 SANYO AKO 450
Contextual Info: SANYO SEMICONDUCTOR ISE D I CORP ? c]cì?Q7t. □aDSHS'ì □ | “~ r - 3 f - u 2SK775 Ñ -Channel M O S Silicon Field-Effect Transistor Very High Speed Switching Applications 2559 Features . Low ON resistance, very high-speed switching Absolute M a x i m Ratings at Ta=25°C

Contextual Info: MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • Transition frequency f T >300MHz @ I C =10mAdc,

"marking s1a" sot-23

Abstract: 1N916 MMBT3904 MMBT3904 40V SOT23 transistor marking s1a
Contextual Info: MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • Transition frequency f T >300MHz @ I C =10mAdc,

2SD1397

Abstract: 2SC2271 transistor 2SC2271 2S01397 ic 30359
Contextual Info: SANYO SEMICONDUCTOR CÔRP ISE D I 7 ^ 707 ^ 000SD7S T ' 3 3 - / 3 2SD1397« N PN Triple Diffused Planar Silicon Transistor 2022 Color TV Horizontal Deflection Output Applications with Damper Diode 1223C Features: . High breakdown voltage and high reliability.

2SA1238

Abstract: bc 147 B transistor transistor BC 147
Contextual Info: SA NY O S E M I C O N D U C T O R CORP 3SE D • 7 T T 7 0 7 b 0 G 0 Ô Û 2 7 7 Hi . tiifiîin'i :.j_w PNP Epitaxial Planar Silicon Transistor 2029A a! "T-Zf-li Differential Amp Applications D968C Applications . Differential amp, current mirror. Features

Contextual Info: MMBT4401 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT- 23 Unit: inch mm FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V 0.120(3.04) 0.110(2.80) • Collector current I C = 600mA

Contextual Info: MMDT4403TB6 DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts SOT-563 200 mWatts Unit：inch mm • Collector-emitter voltage V CE = -40V 0.044(1.10) 0.035(0.90) • PNP epitaxial silicon, planar design • Collector current I C = -500mA

Contextual Info: MMBT4401 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT- 23 Unit: inch mm FEATURES • NPN epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage V CE = 40V 0.110(2.80) • Collector current I C = 600mA

1N916

Abstract: MMBT3904W c 2026 y transistor
Contextual Info: MMBT3904W NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 150 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V • Collector current I C = 200mA • In compliance with EU RoHS 2002/95/EC directives

MMBTA05

Abstract: MMBTA06 MMBTA55 MMBTA56
Contextual Info: MMBTA05,MMBTA06,MMBTA55,MMBTA56 NPN AND PNP HIGH VOLTAGE TRANSISTOR VOLTAGE 60~80 Volts POWER 225 mWatts FEATURES • NPN and PNP silicon, planar design • Collector current I C = 100mA • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA

Contextual Info: MMBT3904W NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 150 mWatts SOT-323 Unit：inch mm 0.004(0.10)MIN. • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V • Collector current I C = 200mA 0.087(2.20) 0.070(1.80)

Contextual Info: MMDT4401 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE =40V • Collector current I C = 600mA • In compliance with EU RoHS 2002/95/EC directives

Contextual Info: MMBT2369A NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 15 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 15V • Collector current I C = 200mA • In compliance with EU RoHS 2002/95/EC directives

la 1201 sanyo

Abstract: IS-313D 2SB1273 QDQ4127 b1251 n1cj EIAJ CP 301 30H150
Contextual Info: SANYO SEMICONDUCTOR CORP la E t I 71=170?t QD04127 3 P T'-33-!c 2SB1273 PNP Epitaxial Planar Silicon Transistor 2010A Low Frequency Power Amp Applications 2332 Applications . Power amp Features . Wide ASO adoption of MBIT process) . Low saturation voltage

Contextual Info: MMBT3904W NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 150 mWatts SOT-323 Unit：inch mm 0.004(0.10)MIN. • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V 0.087(2.20) 0.070(1.80) • Collector current I C = 200mA

Contextual Info: MMDT3904 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V • Collector current I C = 200mA • In compliance with EU RoHS 2002/95/EC directives

MMBT2369A

Abstract: Transistor General Purpose Transistor FE SOT
Contextual Info: MMBT2369A NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 15 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 15V • Collector current I C = 200mA • In compliance with EU RoHS 2002/95/EC directives

MMDT4401

Contextual Info: MMDT4401 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 200 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V • Collector current I C = 600mA • In compliance with EU RoHS 2002/95/EC directives

TRANSISTOR SMD MARKING CODE p1

Abstract: TRANSISTOR SMD CODE PACKAGE SOT323 TRANSISTOR SMD MARKING CODE d2 TRANSISTOR SMD MARKING CODE ce TRANSISTOR SMD MARKING CODE oc smd transistor marking code P MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE 1l SMD TRANSISTOR MARKING 1B SMD TRANSISTOR MARKING 28
Contextual Info: COMCHIP Small Signal Transistor SMD Diodes Specialist BC846AW-G Thru. BC848CW-G NPN RoHS Device Features -Power dissipation O PCM: 0.15W (@TA=25 C) -Collector current ICM: 0.1A -Collector-base voltage VCBO: BC846W=80V BC847W=50V BC848W=30V -Operating and storage junction temperature