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    TRANSISTOR C 2500 Search Results

    TRANSISTOR C 2500 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 2500 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2225-4L

    Abstract: No abstract text available
    Text: 2225-4L 3.5 Watts, 24 Volts, Class C Microwave 2200-2500 MHz GENERAL DESCRIPTION The 2225-4L is a COMMON BASE transistor capable of providing 3.5 Watts, Class C output power over the band 2200-2500 MHz. The transistor includes input prematching for full broadband capability. Gold metalization and


    Original     		PDF 2225-4L 2225-4L

    Untitled

    Abstract: No abstract text available
    Text: MMPQ3725 MMPQ3725 E B E B E B E C SOIC-16 B C C C C C C C NPN Quad Transistor This device is designed for high current low impedance line driver applications. Sourced from Process 26. Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter


    Original     		PDF MMPQ3725 SOIC-16

    mcl610

    Abstract: MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601
    Text: 112 O p to iso Wlato rs A* * A, ~ PACKAGE PRODUCT KEY OUTPUT FORMAT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR


    OCR Scan     		PDF MCT210 MCT26 MCT66 MCL600 MCL610 MCT81 MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601

    MCT8 opto

    Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35
    Text: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR


    OCR Scan     		PDF MCT210 MCT26 MCT66 C1255 10TT1. MCT8 opto c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35

    6002 transistor

    Abstract: QCA50B QCA50B40 QCA50B60 QCB50A40 QCB50A60 UUE76102
    Text: 0002171 IDT TRANSISTOR M ODULE QCA50B/QCB50A40/60 UUE76102 M Q C A 5 0 B and Q C B 5 0 A are dual Darlin­ gton power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode.


    OCR Scan     		PDF QCA50B/QCB50A40/60 QCA50B QCB50A 400/600V UUE76102 0CA50B QCA50B40 0D02172 50A40 b0B60 6002 transistor QCA50B60 QCB50A40 QCB50A60

    10E-D3

    Abstract: TLP532 E67349 TLP531
    Text: TOSHIBA TLP531JLP532 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP531, TLP532 PROGRAMMABLE CONTROLLERS A C /D C -IN PU T MODULE SOLID STATE RELAY The TOSHIBA TLP531 and TLP532 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a


    OCR Scan     		PDF TLP531 TLP532 TLP531, TLP532 2500Vrms UL1577, E67349 10E-D3 E67349

    Untitled

    Abstract: No abstract text available
    Text: • TRANSISTOR MODULE 7«maM3 0005177 357 QCA75A/QCB75A40/60 UL;E76102 M and Q C B 7 5 A are dual Darlin­ gton power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode.


    OCR Scan     		PDF QCA75A/QCB75A40/60 E76102 A75A60 B75A40 B75A60 QCA75A/QCB75A

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE QCA200AA120 Q C A 200 A A 12 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated


    OCR Scan     		PDF QCA200AA120 7T11243 0QD2D13

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE QCA75AA100 UL;E76102 M Q C A 75A A 100 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated


    OCR Scan     		PDF QCA75AA100 E76102 100msec 00V-----IB,

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE QCA200A40/60 Q C A 2 00 A is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semicon­


    OCR Scan     		PDF QCA200A40/60 400/600V QCA200A

    603AL

    Abstract: marking 603AL transistor
    Text: EMI C O N D U C T O R tm FDD603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel logic level enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, D M O S technology. This


    OCR Scan     		PDF FDD603AL 603AL, 603AL marking 603AL transistor

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE QCA100AA100 UL;E76102 M Q C A 1O O A A 10 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated


    OCR Scan     		PDF QCA100AA100 E76102

    BUK427-600B

    Abstract: No abstract text available
    Text: 7 ^ 3 9 - / / Philips Com ponents Data sheet status P r o d u c t s p e c ific a tio n date of issue March 1991 PHILIPS BUK427-600B PowerMOS transistor INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic füll pack envelope.


    OCR Scan     		PDF BUK427-600B 7110fl5fc. -SOT199 T-39-11 711Qfl2b BUK427-600B

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TLP570,TLP571 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TI PR7Í1 T I PR71 PRO GRAM M ABLE CONTROLLERS A C /D C - IN P U T MODULE SOLID STATE RELAY The TO SH IBA TLP570 and TLP571 consist of a darlington connected photo-transistor optically coupled to a gallium arsenide infrared


    OCR Scan     		PDF TLP570 TLP571 TLP571 2500Vrms UL1577, E67349 TLP570

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE QCA200AA100 UL;E76102 M Q C A 2 0 0 A A 1 0 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated


    OCR Scan     		PDF QCA200AA100 E76102 QDQ2Q12

    QCA30B40

    Abstract: QCA30B60 QCB30A40 QCB30A60 UUE76102 711-1543
    Text: 7 ^ 1 5 4 3 GO051b? TRANSISTOR MODULE 4flfl QCA30B/QCB30A40/60 U U E 7 6 1 0 2 M and Q C B 30A are dual Darlin­ gton power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode.


    OCR Scan     		PDF QCA30B/QCB3QA40/60 QCA30B QCB30A 400/600V QCA30B UUE76102 QCB30A QCA30B40 QCB30A40 500/i QCA30B60 QCB30A60 711-1543

    TLP521

    Abstract: TLP521-4 TLP521-1 TLP521-2 Toshiba tlP521 Photocoupler tlp521 Photocoupler TLP521-2GB TLP521 gr TLP521-1GB TLP521-2 gr
    Text: TOSHIBA TLP521-1,TLP521-2,TLP521-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP521-1, TLP521-2, TLP521-4 PROGRAMMABLE CONTROLLERS A C /D C -IN P U T MODULE SOLID STATE RELAY The TOSHIBA TLP521-1, -2 and -4 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode.


    OCR Scan     		PDF TLP521 TLP521-2JLP521 TLP521-1, TLP521-2, TLP521-4 TLP521-2 TLP521-4 2500Vrms UL1577, TLP521-1 Toshiba tlP521 Photocoupler tlp521 Photocoupler TLP521-2GB TLP521 gr TLP521-1GB TLP521-2 gr

    D 1437 transistor

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the


    OCR Scan     		PDF 2SC5004 D 1437 transistor

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    BUK427-600B

    Abstract: 18-SO BUK427-600 d0411
    Text: 7 ^ 3 9 - / / Philips C om ponents Data sheet status Product specification date of issue March 1991 PHILIPS BUK427-600B PowerMOS transistor INTERNATION GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope.


    OCR Scan     		PDF BUK427-600 711Dfl2t. D0411S0 -SOT199 BUK427-600B 18-SO d0411

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TLP531,TLP532 TO SHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP531, TLP532 P RO G R AM M ABLE CONTROLLERS A C /D C -IN P U T M O DU LE SOLID STATE RELAY The TOSHIBA TLP531 and TLP532 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a


    OCR Scan     		PDF TLP531 TLP532 TLP531, TLP532 2500Vrms UL1577, E67349

    Untitled

    Abstract: No abstract text available
    Text: TLP572 GaAs IRED S PHOTO-TRANSISTOR TLP572 P R O G R A M M A B L E C ONTRO LLERS A C /DC - IN P U T M O D U L E SO LID STATE RELAY The TOSHIBA TLP572 consists of a darlington connected photo­ transistor optically coupled to a gallium arsenide infrared em itting


    OCR Scan     		PDF TLP572 TLP572) TLP572 2500Vrms UL1577, E67349 RATI72

    lt 715 1111

    Abstract: st zo 607
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEA TU R E • P A C K A G E DIMENSIONS in mm High gain, low noise • Small reverse transfer capacitance • C an operate at low voltage ¥ A B S O LU TE MAXIMUM RATINGS (Ta = 25 °C)


    OCR Scan     		PDF