TRANSISTOR C 838 Search Results

TRANSISTOR C 838 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR C 838 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
58W SOT Abstract: BLW85 ZL18 Contextual Info: N AMER P H I L I P S / D IS C R ET E b ^E D b b S 3 T 31 • 0 0 2 ^ 4 ^ 574 IAPX D L V V O O A H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f, transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and	OCR Scan	bbS3T31 BLW85 7Z77540 7Z77541 58W SOT BLW85 ZL18	PDF
BLW 82 Contextual Info: N AMER PHILIPS/DISCRETE b'lE » bb53T31 QQ2T4MT 374 J APX DLVVO O V H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and	OCR Scan	bb53T31 BLW 82	PDF
od300 Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER T he 2S C 5 2 8 9 is ideal fo r the final stag e am p lifie r in 1.9G H z-band digital cord le ss phones D EC T, PHS, etc. . PA C K A G E D R AW IN G (Unit: mm)	OCR Scan	2SC5289 SC-61 2SC5289-T1 od300	PDF
431202036640 choke Abstract: CEF 83 A 3 BLW85 ZL18 blw85 transistor test circuit Contextual Info: PHILIPS INTERN A T I O N A L L.5E D 711Dfi2ti 00b33>4b Ô3Û • PHIN ■ I BLW85 _ A _ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V . The transistor is resistance stabilized and	OCR Scan	BLW85 QQb3357 431202036640 choke CEF 83 A 3 BLW85 ZL18 blw85 transistor test circuit	PDF
MPQ3762 Abstract: it 051 1N916 2N3762 tup pnp transistor Contextual Info: M P Q silicon 3 7 6 2 QUAD DUAL IN-LINE PNP SILICON ANNULAR MEMORY DRIVER TRANSISTOR QUAD DUAL-IN-LINE PNP SILICON MEMORY DRIVER TRANSISTOR . . . designed fo r high-current, high-speed switching. • Low Collector-E m itter Saturation Voltage — VC E (sat) s 0 .5 5 V d c (M ax) @ l c s 5 0 0 m Adc	OCR Scan	MPQ3762 120ns 2N3762 O-116 30Vdc 1N916 MPQ3762 it 051 1N916 2N3762 tup pnp transistor	PDF
1.4464 Abstract: NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473 Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PA C K A G E D R AW IN G cordless phones DECT, PHS, etc. . (Unit: mm) FEA TU R E S	OCR Scan	2SC5289 2SC5289 SC-61 2SC5289-T1 1.4464 NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473	PDF
TRANSISTOR J 5804 NPN Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.	OCR Scan	2SC4885 SC-70 TRANSISTOR J 5804 NPN nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF	PDF
2SC5012-T1 Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •	OCR Scan	2SC5012 2SC5012-T1 2SC5012-T2 2SC5012-T1	PDF
DA QG Contextual Info: IPB065N06L G IPP065N06L G "%&$!"# Power-Transistor Product Summary Features P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< V 9H .( J R , ? >=1G .&- Y" I9 0( 6 P S ? @5A1C 9>7 C 5=@5A1C	Original	IPB065N06L IPP065N06L DA QG	PDF
Super-247 Package Abstract: IRG4PSC71UD Contextual Info: PD - 91682A IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than	Original	1682A IRG4PSC71UD Super-247 O-247 Super-247 Package IRG4PSC71UD	PDF
irg4bc40 Abstract: IRG4BC40W Contextual Info: PD - 91654A IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	1654A IRG4BC40W an52-7105 irg4bc40 IRG4BC40W	PDF
Contextual Info: PD - 91682A IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than	Original	1682A IRG4PSC71UD Super-247 O-247	PDF
Contextual Info: PD - 91629A IRG4BC30W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	1629A IRG4BC30W	PDF

IRG4PC50W Abstract: *g4pc50w TO-3P Jedec package outline Contextual Info: PD - 91657B IRG4PC50W INSULATED GATE BIPOLAR TRANSISTOR C Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	91657B IRG4PC50W hi252-7105 IRG4PC50W *g4pc50w TO-3P Jedec package outline	PDF
*g4pc50w Abstract: IRG4PC50W IRG4PC50W EQUIVALENT GE-5040 Contextual Info: PD - 91657B IRG4PC50W INSULATED GATE BIPOLAR TRANSISTOR C Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	91657B IRG4PC50W *g4pc50w IRG4PC50W IRG4PC50W EQUIVALENT GE-5040	PDF
Contextual Info: PD - 91654A IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	1654A IRG4BC40W	PDF
da5 diode Abstract: BC519 IPB048N06L IPP048N06L DA QG marking 1bc Contextual Info: IPP048N06L G IPB048N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< E5AB9 ?> I9 .( J ,&, Y" ( 6 P S ? @5A1C	Original	IPP048N06L IPB048N06L da5 diode BC519 DA QG marking 1bc	PDF
3p transistor Abstract: IRG4PC30W Contextual Info: PD - 91628A IRG4PC30W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	1628A IRG4PC30W 3p transistor IRG4PC30W	PDF
IRG4BC40W Abstract: irg4bc40 354 GE Contextual Info: PD - 91654A IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	1654A IRG4BC40W IRG4BC40W irg4bc40 354 GE	PDF
IRG4BC30W Contextual Info: PD - 91629A IRG4BC30W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	1629A IRG4BC30W IRG4BC30W	PDF
IRG4PC30W Contextual Info: PD - 91628A IRG4PC30W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	1628A IRG4PC30W IRG4PC30W	PDF
Contextual Info: PD - 91657B IRG4PC50W INSULATED GATE BIPOLAR TRANSISTOR C Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	91657B IRG4PC50W	PDF
Contextual Info: PD - 91628A IRG4PC30W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	1628A IRG4PC30W	PDF

TRANSISTOR C 838 Search Results

TRANSISTOR C 838 Result Highlights (5)

TRANSISTOR C 838 Datasheets Context Search

2N2222A 338

58W SOT

BLW 82

od300

431202036640 choke

MPQ3762

1.4464

TRANSISTOR J 5804 NPN

2SC5012-T1

DA QG

Super-247 Package

irg4bc40

IRG4PC50W

*g4pc50w

da5 diode

3p transistor

IRG4BC40W

IRG4BC30W

IRG4PC30W