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    TRANSISTOR C333 Search Results

    TRANSISTOR C333 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C333 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C3332

    Abstract: 2SC3332S 2sc3332
    Text: 2SC3332 Ordering number : EN1334E SANYO Semiconductors DATA SHEET 2SC3332 NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features • • • • Hgih breakdown voltage Excellent hFE linearity Wide ASO and highly resistant to breakdown


    Original     		PDF EN1334E 2SC3332 C3332 2SC3332S 2sc3332

    2SC3334

    Abstract: C3334 2SA1321
    Text: 2SC3334 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC3334 High-Voltage Switching Applications Color TV Chroma Output Applications • High breakdown voltage: VCEO = 250 V • Low Cre: 1.8 pF (max) • Complementary to 2SA1321 Unit: mm


    Original     		PDF 2SC3334 2SA1321 2SC3334 C3334 2SA1321

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN1334F 2SC3332 Bipolar Transistor 160V, 0.7A, Low VCE sat NPN Single NP http://onsemi.com Features • • • • Hgih breakdown voltage Excellent hFE linearity Wide SOA and highly resistant to breakdown Adoption of MBIT process Specifications


    Original     		PDF EN1334F 2SC3332

    Untitled

    Abstract: No abstract text available
    Text: 2SC3334 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC3334 High-Voltage Switching Applications Color TV Chroma Output Applications • High breakdown voltage: VCEO = 250 V • Low Cre: 1.8 pF (max) • Complementary to 2SA1321 Unit: mm


    Original     		PDF 2SC3334 2SA1321

    2SC3334

    Abstract: No abstract text available
    Text: 2SC3334 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC3334 High-Voltage Switching Applications Color TV Chroma Output Applications • High breakdown voltage: VCEO = 250 V • Low Cre: 1.8 pF (max) • Complementary to 2SA1321 Unit: mm


    Original     		PDF 2SC3334 2SA1321 O-92MOD 2SC3334

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN1334E 2SC3332 Bipolar Transistor 180V, 160A, Low VCE sat NPN Single NP http://onsemi.com Features • • • • Hgih breakdown voltage Excellent hFE linearity Wide ASO and highly resistant to breakdown Adoption of MBIT process Specifications


    Original     		PDF EN1334E 2SC3332

    transistor c331

    Abstract: C 331 Transistor c331 transistor transistor c 331 IRGPC50M IGBT 500V 35A c331 ses
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1024 IRGPC50M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to


    Original     		PDF IRGPC50M 10kHz) O-247AC C-334 transistor c331 C 331 Transistor c331 transistor transistor c 331 IRGPC50M IGBT 500V 35A c331 ses

    transistor c331

    Abstract: c331 transistor ic901 IRGPC50M IGBT 500V 35A c331 ses
    Text: PD - 9.1024 IRGPC50M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency


    Original     		PDF IRGPC50M 10kHz) O-247AC C-334 transistor c331 c331 transistor ic901 IRGPC50M IGBT 500V 35A c331 ses

    transistor c331

    Abstract: c331 transistor IRGPC50M C329 transistor c332
    Text: PD - 9.1024 IRGPC50M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency


    Original     		PDF IRGPC50M 10kHz) O-247AC C-334 transistor c331 c331 transistor IRGPC50M C329 transistor c332

    1-450-358-11

    Abstract: SI-18752 si18752 schematic diagram surround sony ry901 t1al fuse M5F79M07L T902 transformer 11ES2-NTA2B 2SA1175-HFE
    Text: TA-VE150 SERVICE MANUAL AEP Model UK Model This amplifier has the Dolby Surround system. Manufactured under license from Dolby Laboratories Licensing Corporation. “Dolby”, the double-D symbol a and “Pro Logic” are trademarks of Dolby Laboratories Licensing Corporation.


    Original     		PDF TA-VE150 RM-U150) 1-450-358-11 SI-18752 si18752 schematic diagram surround sony ry901 t1al fuse M5F79M07L T902 transformer 11ES2-NTA2B 2SA1175-HFE

    schematic diagram tv sony 21 trinitron

    Abstract: cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112
    Text: SERVICE MANUAL MODEL COMMANDER DEST. CHASSIS NO. KV-EF34M80 RM-951 SCC-U28D-A Vietnam BG-3S CHASSIS MODEL COMMANDER DEST. CHASSIS NO. TRINITRON COLOR TV KV-EF34M80 RM-951 SPECIFICATIONS Note Power requirements 110-240 V AC, 50/60 Hz Power consumption W Indicated on the rear of the TV


    Original     		PDF KV-EF34M80 RM-951 SCC-U28D-A NA324-M3 A80LPD10X) SBX3005-01 RM-951) schematic diagram tv sony 21 trinitron cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112

    d667 transistor

    Abstract: nec tokin oe 128 NEC Tokin oe 907 inverter nec tokin diode tp806 K105 mosfet tokin lcd inverter transistor k58 LM2729 D635 sot
    Text: ORDER NO. CPD0304020C1 Notebook Computer CF-73 This is the Service Manual for the following areas. M …for U.S.A. and Canada Model Number Reference The following models are numbered in accordance with the types of CPU, LCD and HDD etc. featured by product.


    Original     		PDF CPD0304020C1 CF-73 CF-731 SuC1707 C1709 C1712 C1713 C1711 R1701 R1700 d667 transistor nec tokin oe 128 NEC Tokin oe 907 inverter nec tokin diode tp806 K105 mosfet tokin lcd inverter transistor k58 LM2729 D635 sot

    transistor k520

    Abstract: transistor k518 K525 transistor transistor k513 C1ZBZ000 32.768Mhz oscillator transistor k510 k514 transistor transistor C635 W24 transistor k72 t9
    Text: ORDER NO. CPD0511050C1 Personal Computer CF-T4 This is the Service Manual for the following areas. M …for U.S.A. and Canada Model No. CF-T4GWCTZ1 2 1: Operation System B: Microsoft Windows® XP Professional 2: Area M: Refer to above area table 2005 Matsushita Electric Industrial Co., Ltd. All rights reserved.


    Original     		PDF CPD0511050C1 DFJS963ZA DFJS962ZA N1ZYYY000002 N1ZYYY000003 DFJS973ZA DFJS958ZB DFJE12U112BB DL3UP1443AAA DFJS96102 transistor k520 transistor k518 K525 transistor transistor k513 C1ZBZ000 32.768Mhz oscillator transistor k510 k514 transistor transistor C635 W24 transistor k72 t9

    ignition spark mj10012

    Abstract: TRANSISTOR ba 751 USE OF TRANSISTOR ignition C3334 schematic ignition delco ic HIGH ENERGY IGNITION CIRCUIT MC3334 c3334 schematic diagram ignition stroke
    Text: <8 > M O TO R O LA — M C3334 MCC3334 MCCF3334 """ High Energy Ignition C ircuit This device is designed to use the signal from a reluctor type ignition pickup to produce a well controlled output from a power Darlington output transistor. HIGH ENERGY IGNITION CIRCUIT


    OCR Scan     		PDF C3334 MCC3334 MCCF3334 D10273fc, MC3334 MCCF3334 ignition spark mj10012 TRANSISTOR ba 751 USE OF TRANSISTOR ignition schematic ignition delco ic HIGH ENERGY IGNITION CIRCUIT c3334 schematic diagram ignition stroke

    c331 transistor

    Abstract: No abstract text available
    Text: international ri“ HlRectifier P D -9.1024 IRGPC50M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, V qe = 15V • Switching-ioss rating includes all 'tail" losses • Optimized for medium operating frequency 1 to


    OCR Scan     		PDF IRGPC50M 10kHz) C-333 S54SS G020123 O-247AC C-334 c331 transistor

    tp 300 ignition module

    Abstract: HIGH ENERGY IGNITION CIRCUIT IC DELCO delco darlington type transistor in ignition TP ignition module ignition block diagram MC3334/TRANSISTOR ba 751
    Text: ^ — M O TO R O LA — — M C 3334 M CC3334 M CCF3334 High Energy Ignition C ircuit This device is designed to use the signal from a reluctor type ignition pickup to produce a well controlled output from a power Darlington output transistor. HIGH ENERGY


    OCR Scan     		PDF CC3334 CCF3334 MCCF3334 MC3334 MCC3334 MCCF3334 tp 300 ignition module HIGH ENERGY IGNITION CIRCUIT IC DELCO delco darlington type transistor in ignition TP ignition module ignition block diagram MC3334/TRANSISTOR ba 751

    Untitled

    Abstract: No abstract text available
    Text: <8 > MOTOROLA M C33363 A dvance Information High Voltage Switching Regulator The MC33363 is a monolithic high voltage switching regulator that is specifically designed to operate from a rectified 240 Vac line source. This integrated circuit features an on-chip 700 V/1.0 A SenseFET power switch,


    OCR Scan     		PDF C33363 MC33363 PT1950, 3ti75Â MC33363 b3b7253

    transistor C5080

    Abstract: transistor 2SC458 C5247 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 2SC1755A transistor f 20 nf C5246 A1052 C4965
    Text: Products at a Glance by Application High Frequency Use 1. UHF/VHF TV Tuner Block Diagram Line Up Package outline TO-92 A pplication UH F RF 1 M PAK 4 P C M PAK 4 P G aA sM E S M PAK-4 « 3SK228 FET CM PA K -4 4 P 3SK239A 3SK309 MOS FET Vdd= 1 2 V 3SK186 3SK295


    OCR Scan     		PDF 3SK228 3SK239A 3SK309 3SK186 3SK295 3SK194 BB101M BB101C 3SK296 2SC2732 transistor C5080 transistor 2SC458 C5247 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 2SC1755A transistor f 20 nf C5246 A1052 C4965

    PT1950

    Abstract: MC33362P
    Text: M MOTOROLA 1 M C33362 A dvance Information High Voltage Sw itching R egulator The MC33362 is a monolithic high voltage switching regulator that is specifically designed to operate from a rectified 120 VAC line source. This integrated circuit features an on-chip 500 V/2.0 A SenseFET power switch,


    OCR Scan     		PDF C33362 MC33362 PT1950, MC33362 PT1950 MC33362P

    MC33360

    Abstract: P3716-A transformer 220 AC 99548 Nippon capacitors
    Text: Order this document by MC33360/D M OTOROLA M C33360 Advance Information H igh V oltage S W IT C H M O D E Battery Charger The MC33360 is a high voltage SWITCHMODE battery charger that is designed to operate directly from rectified 120 VAC line voltage. High


    OCR Scan     		PDF MC33360/D C33360 MC33360 1PHX33684-0 C33360/D P3716-A transformer 220 AC 99548 Nippon capacitors

    TCA160

    Abstract: BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300
    Text: MULLARD DATA BOOK 1973-74 ER R A TA A U G U S T 1973 j\ 1 d - ^ Mullard Limited Renewal Sales Department Mullard House Torrington Place London WC1E 7HD N / , S E M IC O M D U C Type No. Page No. AC187 13 Correction Delete minus signs to read: *IC = 300m A;


    OCR Scan     		PDF AC187 BC157 BC158 BC159 BC186 BC187 BD201 BD202 BD203 BD204 TCA160 BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300

    IAO5 Sharp

    Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
    Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The


    OCR Scan     		PDF Q60103- thS10 to3530 to4600 to4600 IAO5 Sharp free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071

    MC33368

    Abstract: Nippon capacitors
    Text: Order this document by MC33368/D MOTOROLA M C33368 Advance Information HIGH VOLTAGE GREENLINE POWER FACTOR CONTROLLER High Voltage GreenLine™ Power Factor Controller The MC33368 is an active power factor controller that functions as a boost preconverter in o ff-lin e power supply applications. MC33368 is


    OCR Scan     		PDF MC33368/D C33368 MC33368 1PHX36077-0 Nippon capacitors

    high voltage smps

    Abstract: PT2510
    Text: <g> MOTOROLA M C33368 Advance Information High Voltage GreenLine Power Factor C ontroller The MC33368 is an active power factor controller that functions as a boost preconverter in off-line power supply applications. MC33368 is optimized for low power, high density power supplies requiring a minimum


    OCR Scan     		PDF C33368 MC33368 590302B03600 MC33368 high voltage smps PT2510