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    TRANSISTOR CODE ZL Search Results

    TRANSISTOR CODE ZL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR CODE ZL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor marking MCs

    Abstract: SOT 23 CODE MCS NPN marking MCs marking MCs sot-323 Q62702-F1645 bfs 11
    Text: BFS 17W NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Type Marking Ordering Code Pin Configuration BFS 17W MCs 1=B Q62702-F1645 2=E Package 3=C SOT-323 Maximum Ratings of any single Transistor Parameter


    Original     		PDF Q62702-F1645 OT-323 Nov-28-1996 transistor marking MCs SOT 23 CODE MCS NPN marking MCs marking MCs sot-323 Q62702-F1645 bfs 11

    SOT 23 CODE MCS

    Abstract: transistor marking MCs Q62702-F940 bfs 11 SOT 23 marking MCS
    Text: BFS 17P NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA • CECC-type available: CECC 50002/248. Type Marking Ordering Code Pin Configuration BFS 17P MCs 1=B Q62702-F940 2=E Package 3=C SOT-23 Maximum Ratings of any single Transistor


    Original     		PDF Q62702-F940 OT-23 Aug-02-1996 500MHz SOT 23 CODE MCS transistor marking MCs Q62702-F940 bfs 11 SOT 23 marking MCS

    6c2 transistor

    Abstract: transistor marking MCs Q62702-F1645 transistor BFs 18 SOT 23 CODE MCS
    Text: BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Type Marking Ordering Code Pin Configuration BFS 17S MCs 1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363 Q62702-F1645 Package Maximum Ratings of any single Transistor


    Original     		PDF OT-363 Q62702-F1645 Dec-18-1996 6c2 transistor transistor marking MCs Q62702-F1645 transistor BFs 18 SOT 23 CODE MCS

    START420

    Abstract: No abstract text available
    Text: START420 NPN Silicon RF Transistor PRELIMINARY DATA • LOW NOISE FIGURE: NFmin = 1.05dB @ 1.8GHz, 5mA, 2V • COMPRESSION P1dB = 12.5dBm @ 1.8GHz, 20mA, 2V • TRANSITION FREQUENCY 42GHz • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 ORDER CODE START420


    Original     		PDF START420 42GHz OT343 OT343 START420 500MHz-5GHions

    RF NPN POWER TRANSISTOR 2.5 GHZ

    Abstract: Q62702-F1575 marking 17 sot343
    Text: BFP 136W NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems • fT = 5.5GHz • Gold metalization for high reliability ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


    Original     		PDF OT-343 Q62702-F1575 900MHz Jan-20-1997 RF NPN POWER TRANSISTOR 2.5 GHZ Q62702-F1575 marking 17 sot343

    2gma

    Abstract: Q62702-F938 121-996
    Text: BFR 35AP NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


    Original     		PDF OT-23 Q62702-F938 S21/S12| Dec-12-1996 2gma Q62702-F938 121-996

    Transistor BFT 93

    Abstract: Transistor BFT 10 Q62702-F1063 MARKING 93 40mAIC BFT93
    Text: BFT 93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package


    Original     		PDF OT-23 Q62702-F1063 Dec-12-1996 Transistor BFT 93 Transistor BFT 10 Q62702-F1063 MARKING 93 40mAIC BFT93

    Transistor BFT 92W

    Abstract: 30227 Transistor BFT 10 transistor BFt 65 Q62702-F1681
    Text: BFT 92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W NPN ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


    Original     		PDF OT-323 Q62702-F1681 900MHz Dec-11-1996 Transistor BFT 92W 30227 Transistor BFT 10 transistor BFt 65 Q62702-F1681

    30227

    Abstract: Transistor BFT 10 Q62702-F1062 w1s sot23
    Text: BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


    Original     		PDF OT-23 Q62702-F1062 900MHz Dec-13-1996 30227 Transistor BFT 10 Q62702-F1062 w1s sot23

    sot marking code ZS

    Abstract: No abstract text available
    Text: BF 775A NPN Silicon RF Transistor • Especially suitable for amplifiers and TV-sat tuners ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BF 775A SOT-23 LGs Q62702-F1250 1=B


    Original     		PDF OT-23 Q62702-F1250 Tst500 S21/S12| Dec-12-1996 sot marking code ZS

    z24 mosfet

    Abstract: No abstract text available
    Text: AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code-division multiple access (CDMA), global


    Original     		PDF AGR09180EF Hz--895 DS04-123RFPP DS04-031RFPP) z24 mosfet

    MJE 340 transistor

    Abstract: Q62702-F1501
    Text: BFP 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF 900MHz OT-343 Q62702-F1501 Aug-30-1996 MJE 340 transistor Q62702-F1501

    smd transistor fq 30

    Abstract: BFG17A TRANSISTOR 610 smd
    Text: Philips Semiconductors Product specification NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a microminiature plastic SOT143 surface mounting envelope with double emitter bonding. PIN 4 DESCRIPTION 3 Code: E6 It is intended for use in wideband


    OCR Scan     		PDF BFG17A OT143 M5B014 OT143. MBB376 711002b smd transistor fq 30 BFG17A TRANSISTOR 610 smd

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFS17W NPN Silicon RF Transistor >For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Marking Ordering Code B F S 17W M Cs Pin Configuration Q62702-F1645 1 =B Package ro il m Type 3 =C SOT-323 Maximum Ratings of any single Transistor


    OCR Scan     		PDF BFS17W Q62702-F1645 OT-323

    bft93

    Abstract: transistor BF 199
    Text: SIEMENS BFT93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


    OCR Scan     		PDF BFT93 BFT93 Q62702-F1063 OT-23 900MHz transistor BF 199

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFT93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


    OCR Scan     		PDF BFT93 Q62702-F1063 OT-23 235b05 G122211 900MHz 235fc

    BFq69

    Abstract: BFQ 58 ts102
    Text: SIEMENS NPN Silicon RF Transistor BFQ 69 • For low-noise broadband amplifiers in antenna and telecommunications systems at collector currents from 1 mA to 25 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code


    OCR Scan     		PDF Q62702-F780 BFQ69 EHT07562 EHT07561 EHTQ7564 BFq69 BFQ 58 ts102

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon RF Transistor • BFQ 69 For low-noise broadband amplifiers in antenna and telecommunications systems at collector currents from 1 mA to 25 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code


    OCR Scan     		PDF Q62702-F780 fl235fc BFQ69 DDb71D3

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFT92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


    OCR Scan     		PDF BFT92W Q62702-F1681 OT-323 900MHz

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 93AW NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan     		PDF Q62702-F1489 OT-323 Q122QS3 900MHz

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Pin Configuration


    OCR Scan     		PDF Q62702-F1062 OT-23 BFT92 H35bD5 900MHz

    marking 93A

    Abstract: No abstract text available
    Text: SIEMENS BFP 93A NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Type


    OCR Scan     		PDF Q62702-F1144 OT-143 900MHz marking 93A

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


    OCR Scan     		PDF 900MHz OT-343 BFP182W Q62702-F1502

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fr = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


    OCR Scan     		PDF 900MHz Q62702-F1492 OT-323 IS211