TRANSISTOR CON HFE 400 Search Results

Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bb53^31 □D2flD31 813 PH2369 IAPX l SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N-P-N transistor in a plastic TO-92 envelope intended for high-speed switching applications. QUICK REFERENCE DATA Collector-base voltage open emitter

8-unit darlington transistor array

Contextual Info: <TRANSISTOR ARRAY> M54583FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY SINK TYPE DESCRIPTION PIN CONFIGURATION M54583FP is eight-circuit collector-current sink type Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform

Contextual Info: • bbSBIBl 002b0D3 07M H A P X N AMER PHI LIPS/DISCRETE PZT3904 b7E D J V SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a microminiature SMD envelope SOT-223 . Designed primarily for high-speed, saturated switching applications in industrial service.

Contextual Info: I Ordering number: EN2471A 2SC4106 N0.247IA NPN Triple Diffused Planar Silicon Transistor 400V/7A Switching Regulator Applications Features . . . . High breakdown voltage and high reliability Fast switching speed Wide ASO Adoption of MBIT process Absolute Maxim» Ratings at Ta=25°C

APX-100

Abstract: l4 tam PH2369 Silicon Epitaxial Planar Transistor philips
Contextual Info: N AUER PHILIPS/DISCRETE bTE D • bbSB'm 0020031 fllB PH2369 I SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N-P-N transistor in a plastic TO-92 envelope intended fo r high-speed switching applications. QUICK REFERENCE D A T A Collector-base voltage open emitter

Contextual Info: Transistor 2SB0726 2SB726 Silicon PNP epitaxial planer type For general amplification M Di ain sc te on na tin nc ue e/ d Unit: mm 5.0±0.2 High foward current transfer ratio hFE. High collector to emitter voltage VCEO. • Absolute Maximum Ratings Parameter

"MARKING CODE P1"

Abstract: marking code 731 sot-89 DDSS173 PXT3904
Contextual Info: m L .b s a 'm d d s s ci7 3 7 3 e] « à p x N AMER PHILIPS/DISCRETE PXT3904 b7E D SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a SOT-89 envelope prim arily intended fo r high-speed, saturated switching applications fo r industrial service. QUICK REFERENCE DATA

2SD1557

Abstract: 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099
Contextual Info: Transistor Quick Reference by Package • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 ~30 m 2SC1675 2SA1005 2SA1206* TO–92 2SA988 2SA992 2SC1841 2SC1845 ~50 m ~100 m

1N916

Abstract: PZT3904 smd transistor 3t
Contextual Info: • bbSBTBl 00Sb003 D7M H A P X N AMER PHILIPS/DISCRETE P ZT 3904 b?E T> SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a microminiature SMD envelope SOT-223 . Designed prim arily fo r high-speed, saturated switching applications in industrial service.

MSC81450M

Abstract: 81450M
Contextual Info: MSC81450M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . REFRACTORY\GOLD METALLIZATION RUGGEDIZED VSWR 25:1 INTERNAL INPUT/OUTPUT MATCHING LOW THERMAL RESISTANCE METAL/CERAMIC HERMETIC PACKAGE POUT = 450 W MIN. WITH 7.0 dB GAIN .400 x .500 2LF L S038

Contextual Info: N AUER PHILIPS/DISCRETE bbS3T31 0 0 2 6 3 ^ 221 b'lE J> BUT11 BUT11A _ y v _ SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-220 envelope, intended for use in converters, inverters, switching regulators, m otor control systems etc.

buw13a

Abstract: Philips BUW13A BUW13
Contextual Info: i i N AUER PHILIPS/DISCRETE bb53131 QQS6547 7^5 I lAPX blE D BUW13 BUW13A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended fo r use in converters, inverters, switching regulators, m otor control systems etc.

BUW12A

Contextual Info: BUW12 BUW12A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high speed, glass-passivated npn power transistors in a SOT93 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc. QUICK REFERENCE DATA BUW12 BUW12A

Contextual Info: N A PIER PHILIPS/DISCRETE bb53T31 0QEA531 32fl b'lE ]> APX BUW12 BUW12A J V SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.

BUW11

Contextual Info: N AUER PHILIPS/DISCRETE bb53= 31 0026515 165 b'lE D APX BUW11 BUW11A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.

2SA1382

Abstract: A1382
Contextual Info: 2SA1382 TOSHIBA 2 S A 1 382 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL PLANAR TYPE Unit in mm POWER AMPLIFIER APPLICATIONS HIGH SPEED SWITCHING APPLICATIONS 5.1 MAX High DC Current Gain : hFE = 150-400 Iç; = —0.5A Low Saturation Voltage : VcE(sat) = -0.5V (MAX.) (IC = - 1A)

p2x transistor

Abstract: transistor marking code p2x PMST4401 bbS3T31
Contextual Info: 0. . e . „ . Philips Semiconductors • bbSB^l 0025^42 DbS M A P X " n AHER P H I L I P S / D I S C R E T E _ . ._ t. Product specification b?E D NPN switching transistor PMST4401 PIN CONFIGURATION FEATURES • S-mini package • High current. DESCRIPTION

BUW12

Abstract: BUW12 PHILIPS BUW12A
Contextual Info: I I N AUER PHILI P S / D I S C R E T E bTE V m bb53^31 0 0 2 0 3 3 1 358 1 IAPX BUW12 BUW12A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended fo r use in converters, inverters, switching regulators, m otor control systems etc.

Contextual Info: GENERAL SEMICONDUCTOR 3918590 GENERAL .jír ^ TS » r i B i l ñ S T O OOOB144 S EMI CON DU CT OR General Semiconductor . Industries, Inc. 95D 02144 D 15 Am p NPN 300, 350, 400V 2N6653, 54, 55 SQ U H BEn COMPANY X G SR 15030,35,40 C 2R H IG H SPEED /H IG H PO W ER SW ITCH IN G T R A N S IS T O R S

beta transistor 2N2222

Abstract: 2N2924 equivalent beta dc of transistor 2N2222 2N2925 equivalent 2N2714 1N9148 beta transistor 2N2712 2N2905 2N2219 2n3390 equivalent beta transistor 150
Contextual Info: N PN SILICON SIG N AL G E N E R A L P U R P O S E A M P LIF IER S A N D SWITCHES V CE iat Type 2N2711 30*90 2N2712 75-225 2N2713 30-90 2N2714 75-225 2N2923 90-180 ' 2N2924 150-300 < 2N2925 235-470' 2N2926 35-470 ’ 2N3390 400-800 2N3391 250-500 Ccb @ 10V

Contextual Info: 2SA1362 T O SH IB A 2 S A 1 362 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm LOW FREQUENCY POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • + 0 .5 2 . 5 - 0 .3 High DC Current Gain : hpE —120~400 Low Saturation Voltage

Contextual Info: Central" CMPTA94 Semiconductor Corp. SURFACE MOUNT PNP HIGH VOLTAGE SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA94 type is a surface mount epoxy molded PNP sili­ con planar epitaxial transistors designed for extremely high voltage applications.

Contextual Info: Central" CMPTA46 Semiconductor Corp. SURFACE MOUNT NPN EXTREMELY HIGH VOLTAGE SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA46 type is a surface mount epoxy molded NPN sili­ con planar epitaxial transistors designed for extremely high voltage applications.

TRANSISTOR D 819

Abstract: transistor c94
Contextual Info: Central“ CMPTA94 Semiconductor Corp. SURFACE MOUNT PNP HIGH VOLTAGE SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA94 type is a surface mount epoxy molded PNP sili­ con planar epitaxial transistors designed for extremely high voltage applications.