TRANSISTOR CR MARKING Search Results

supersot 6 TE

Abstract: Supersot 6
Contextual Info: D is cr e te Power S iq n a l T e c h n o lo q ie s MICDNDUCTDRm ^ ^ FMB1020 4p Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Com plem entary Dual Transistor

transistor Y4

Abstract: complementary npn-pnp power transistors marking A1 TRANSISTOR FMB1020 marking 004
Contextual Info: D is cr ete Power S iq n a l T e ch n o lo g ie s MICDNDUCTDRtm ^ ^ FMB1020 Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complem entary Dual Transistor SuperSOT-6 Surface Mount Package

supersot 6 TE

Contextual Info: D is cr e te Power S iq n a l T e c h n o lo q ie s MICDNDUCTDRm ^ ^ FMB3946 C2 E1 C1 <• Package: SuperSOT-6 Device Marking: .002 g2 Note: The " . " dot signifies Pin 1 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Com plem entary Dual Transistor

M0607

Contextual Info: _ - . :- . ~~_ . ~~ - N AMER PHIL IPS /D IS CR ET E _ Gt.E D ' • ii ~ ■ ■ ■■ t.bS3T31 D01SD4S Ì ■ 11 ■ M06075B400Z M AINTENANCE TYPE r - a s - i g - PULSED MICROWAVE POWER TRANSISTOR

LT 6724

Abstract: D 1878 TRANSISTOR transistor 1758 si2502
Contextual Info: MOS FIELD EFFECT TRANSISTOR 3SK135A RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4P IN M IN I MOLD FEATURES • Suitable for use as R F amplifier in U H F T V tuner. PACKAGE DIMENSIONS in m illim eters • Low Cr„ : 0.02 pF TYP.

smd TRANSISTOR 1D

Abstract: smd transistor marking 2J TRANSISTOR SMD 2X K BST122 SMD TRANSISTOR MARKING 1D transistor ZR TRANSISTOR MARKING DM Marking LR sot89
Contextual Info: • bbSB^ai 0023^00 0^4 « A P X N AUER PH ILI PS / D IS CR E TE h7£ BST122 P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SO T89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SM D-techno logy.

TRANSISTOR 9642

Abstract: transistor D 2395 3SK133 te 2395 TRANSISTOR transistor B 1184 3SK133A TA 9181
Contextual Info: MOS FIELD EFFECT TRANSISTOR 3SK133A RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4P IN M IN I MOLD FEATURES PACKAGE DIMENSIONS • Suitable fo r use as RF a m p lifie r in U H F T V tuner. in m illim eters • L o w Cr „

Contextual Info: TOSHIBA 3SK207 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3<;K7fl7 TV TUNER, UHF RF AMPLIFIER APPLICATIONS. — +rnr Unit in mm 2.9 - Q 3 • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance : Cr^ = 0.015pF Typ.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP General Purpose A m plifier Transistor Surface Mount MSB709-RT1 Motorola Preferred Device COLLECTOR n □ cr 2 1 BASE EMITTER MAXIMUM RATINGS TA = 25°C Rating Collector-Base Voltage Symbol Value v (BR)CBO -6 0 Vdc

TRIAC BCR 16 km

Abstract: PJ 1199 diode TRIAC BCR 12 km catalog transistor TO-220-AR RENESAS marking code package triac sot 89 TRIAC BCR 10 AM pj 999 diode TO-92-AB 110N04
Contextual Info: Part Numbers Part Numbers 1 to 2 Part No. Destination Thyristor and triac Part No. designation CR 8 K M -12 A BCR 8 C M -12 L A Power Transistor Product No. Designation Renesas Uniform Product Number Current ratings (Ex.) Version Commutation characteristics (Triac only)

JY marking transistor

Abstract: Transistor 5331 MRB11080Y
Contextual Info: N AMER P H I L I P S / D I S CR ET E ObE D • bfa53T31 0Ü1SD47 DEVELOPMENT DATA 2 m MRB11080Y T his data sheet contains advance information and specifications are subject to change w ithout notice. T -33-iiT PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor intended for use in military and professional applications. It operates

everlight Ha 1.0

Contextual Info: 4 PIN LO ONG CR REEPAG GE SOP P P PHOTOT TRANSISTOR PHOTO P OCOUPL LER E EL101X-G Serie es Schematic F Features: • Free halo ogens compliiant • Current trransfer ratio CTR: 50 0~600% at IF =5mA, VCE =5V (CTR: 63 3~320% at IF =10mA, VCE =5V) • High isola

marking CODE M92

Contextual Info: • bbS3T31 0023blfi a n ■ APX BF992 N AUER PHI LIP S/ DIS CR ETE L7E D _ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SO T143 m icrom iniature envelope w ith source and substrate interconnected. T his M O S-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.

sot-23 npn marking code cr

Abstract: sot23 marking CR CR SOT-23 sot23 code CR cq 037 G sot-23 MARKING CODE CR 2SC2411 sot23 marking CR A J V D transistor SOT23 CR transistor marking 04
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC2411 FEATURES Pb z Power dissipation: PCM=200mW Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor SOT-23 ORDERING INFORMATION Type No. 2SC2411 Marking Package Code

transistor CR NPN

Abstract: transistor cr marking FMY6 412 pnp transistor pnp transistor marking code 412 pnp transistor code 412 transistor CR pnp
Contextual Info: FMY6 Transistor, dual, PNP and NPN Features Dimensions Units : mm available in SMT5 (FMT, SC-74A) package package marking: FMY6; Y6 FMY6 (SMT5) 2.9 l 0.2 1.9 ± 0.2 package contains an NPN (2SC2411K) and a PNP (2SA1036K) transistor with common emitters large collector current

SL 100 NPN Transistor base emitter collector

Abstract: SL 100 NPN Transistor BF 273 transistor transistor bf 274 BF 274 transistor 2SD2114 transistor CR NPN
Contextual Info: 2SD2114K Transistor, NPN Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) package • package marking: 2SD2114K; BB-*, where ★ is hFE code |E3 S i 24 Q- • high DC current amplification, typically hFE = 1200 • high emitter-base voltage,

transistor CR NPN

Abstract: 2sd transistors equivalent
Contextual Info: 2SD1383K Transistor, NPN, Darlington pair Features Dimensions Units: mm • available in SMT3 (SMT, SC-59) package • package marking: 2SD1383K; W * , where ★ is hFE code • Darlington connection provides high hFE = 50,000 (typically) at 100 mA • built-in resistor of approximately 4 k£2

transistors 2SA

Contextual Info: 2SA1514K 2SA1579 Transistor, PNP Features Dimensions U n its: mm • • • • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages package marking: 2SA1514K and 2SA1579; Ft-*, where ★ is hFE code high breakdown voltage: Vceo = -1 20 V complementary pair with 2SC3906K

Contextual Info: 2SC4132 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SOT-89, SC-62) package 2SC4132 (MPT3) ♦0.2 4 .5 —0,1 package marking: 2SC4132; CB-*, where ★ is hFE code 1,6 * 0.1 zS _ ~ rr high breakdown voltage BVqjtq = 120 V +0.1 10.4—0 05

transistor cross reference

Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Contextual Info: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC

2SA 016

Abstract: A1834 2SA series transistor transistor B 560
Contextual Info: 2SA1834F5 Transistor, PNP Features Dimensions Units : mm available in CPT F5 (SC-63) package 2SA1834F5 (CPT F5) package marking: A1834^Q, where ★ is hFE code and □ is lot number low collector saturation voltage V c E ( s a t) = - 0 . 1 6 V for l c = - 4 A,

TRANSISTOR BI 237

Abstract: NPN/TRANSISTOR BI 237
Contextual Info: 2SD1766 Transistor, NPN Features • available in MPT3 MPT, SOT-89, SC-62 package • package marking: 2SD1766; DB-fr, where * is hFE code • Pq = 2 W, when mounted on 40 x 40 x 0.7 mm ceramic substrate • low collector saturation voltage, typically, VCE(Sat)=0.16 V for

113 marking code PNP transistor

Abstract: 2sb darlington Darlington pair pnp
Contextual Info: 2SB852K Transistor, PNP, Darlington pair Features Dimensions Units : mm available in SMT3 (SMT, SC-59) package 2SB852K (SMT3) package marking: 2SB852K; U * where ★ is hFE code 1 9 *0 2 0.8 Min. 00*0 095 Darlington connection provides high DC current gain (hFE)

2SD1664

Abstract: marking 2sd1664
Contextual Info: 2SD1664 Transistor, NPN Features Dimensions Units : mm 2SD1664 (MPT3) 4j .e5 -+0 0 .'2 1 u> i.e ± o . i R I r-fl rm : i ! ! ! ! ! in csi Tl (1) J Œ I î M 1.0 ±0.3 available in MPT3 (MPT, SC-62) package package marking: 2SD1664; DA*, where ★ is hFE code