Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR CR PNP Search Results

    TRANSISTOR CR PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096EHVX Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    TRANSISTOR CR PNP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BT8032

    Abstract: transistor k 790 CMOS LSI two sound generator ENV1 melody generator TST1 15 block diagram of melody generator BT803
    Text: MELODY GENERATOR WITH ACCOMPANEMENT BT8032 FEATURES • Two Sound Sources with Envelope CR Envelope • 3.0V to 5.0V Operating Voltage • DC or AC Triggered Performance Start Mode (Mask Selected) • Can Drive an 8 Ohm Dynamic Loudspeaker if Provided Externally with a Transistor


    Original     		PDF BT8032 16-pin BT8032 transistor k 790 CMOS LSI two sound generator ENV1 melody generator TST1 15 block diagram of melody generator BT803

    TRIAC BCR 16 km

    Abstract: PJ 1199 diode TRIAC BCR 12 km catalog transistor TO-220-AR RENESAS marking code package triac sot 89 TRIAC BCR 10 AM pj 999 diode TO-92-AB 110N04
    Text: Part Numbers Part Numbers 1 to 2 Part No. Destination Thyristor and triac Part No. designation CR 8 K M -12 A BCR 8 C M -12 L A Power Transistor Product No. Designation Renesas Uniform Product Number Current ratings (Ex.) Version Commutation characteristics (Triac only)


    Original     		PDF R07CS0003EJ0200 TRIAC BCR 16 km PJ 1199 diode TRIAC BCR 12 km catalog transistor TO-220-AR RENESAS marking code package triac sot 89 TRIAC BCR 10 AM pj 999 diode TO-92-AB 110N04

    BT8040N

    Abstract: Melody Generator BT8032 BT8040 MO chip Transistor
    Text: TECHNICAL DATA BT8040N Melody Generator with Accompaniment FEATURES • Two Sound Sources with Envelope CR Envelope • 3.0V to 5.0V Operating Voltage • DC or AC Triggered Performance Start Mode (Mask Selected) • Can Drive an 8 Ohm Dynamic Loudspeaker if Provided Externally with a Transistor


    Original     		PDF BT8040N 16-pin BT8040 BT8032 BT8040 001BB) BT8040N Melody Generator BT8032 MO chip Transistor

    transistor

    Abstract: MJE15031 CHIP TRANSISTOR CP645 ny transistor transistor cr
    Text: PROCESS CP645 Central Power Transistor TM Semiconductor Corp. PNP, 8.0A Power Transistor Chip PROCESS DETAILS Process MULTIEPITAXIAL MESA Die Size 120 x 145 MILS Die Thickness 13 MILS Base Bonding Pad Area 20 x 45 MILS Emitter Bonding Pad Area 14 x 70 MILS


    Original     		PDF CP645 MJE15031 transistor MJE15031 CHIP TRANSISTOR CP645 ny transistor transistor cr

    transistor CR pnp

    Abstract: CJD42C Transistor switch CP611 TIP42C chip die transistor
    Text: PROCESS CP611 Power Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL BASE Die Size 80 X 99 MILS Die Thickness 12.5 ± 1 MILS Base Bonding Pad Area 12 X 32 MILS Emitter Bonding Pad Area 13 X 46 MILS Top Side Metalization Al - 50,000Å


    Original     		PDF CP611 CJD42C TIP42C 21-August transistor CR pnp CJD42C Transistor switch CP611 TIP42C chip die transistor

    CP608

    Abstract: TIP32C CJD32C
    Text: PROCESS CP608 Power Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL BASE Die Size 66 X 66 MILS Die Thickness 12.5 ± 1.0 MILS Base Bonding Pad Area 12 X 24 MILS Emitter Bonding Pad Area 11 X 14 MILS Top Side Metalization Al - 50,000Å


    Original     		PDF CP608 CJD32C TIP32C 21-August CP608 TIP32C CJD32C

    Untitled

    Abstract: No abstract text available
    Text: PROCESS CP608 Power Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 66 x 66 MILS Die Thickness 12.5 ± 1.0 MILS Base Bonding Pad Area 12 x 24 MILS Emitter Bonding Pad Area 11 x 14 MILS Top Side Metalization Al - 50,000Å


    Original     		PDF CP608 CJD32C TIP32C

    supersot 6 TE

    Abstract: Supersot 6
    Text: D is cr e te Power S iq n a l T e c h n o lo q ie s MICDNDUCTDRm ^ ^ FMB1020 4p Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Com plem entary Dual Transistor


    OCR Scan     		PDF FMB1020 300mA. 100uA 100mA 150mA 100MHz 100uA, 200mA, supersot 6 TE Supersot 6

    transistor Y4

    Abstract: complementary npn-pnp power transistors marking A1 TRANSISTOR FMB1020 marking 004
    Text: D is cr ete Power S iq n a l T e ch n o lo g ie s MICDNDUCTDRtm ^ ^ FMB1020 Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complem entary Dual Transistor SuperSOT-6 Surface Mount Package


    OCR Scan     		PDF FMB1020 300mA. 100uA 100mA 150mA 200mA, 100MHz 100uA, fmb1020 transistor Y4 complementary npn-pnp power transistors marking A1 TRANSISTOR marking 004

    supersot 6 TE

    Abstract: No abstract text available
    Text: D is cr e te Power S iq n a l T e c h n o lo q ie s MICDNDUCTDRm ^ ^ FMB3946 C2 E1 C1 <• Package: SuperSOT-6 Device Marking: .002 g2 Note: The " . " dot signifies Pin 1 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Com plem entary Dual Transistor


    OCR Scan     		PDF FMB3946 100mA 100MHz 100uA, supersot 6 TE

    Untitled

    Abstract: No abstract text available
    Text: Q 0 E S 3 C1S TOM • APX ^53^31 Philips Semiconductors N AUER PHILIPS / D I S CR E T E b?E Product specification J> PNP 5 GHz wideband transistor DESCRIPTION £ BFT93 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF


    OCR Scan     		PDF BFT93 BFR93 BFR93A.

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP General Purpose A m plifier Transistor Surface Mount MSB709-RT1 Motorola Preferred Device COLLECTOR n □ cr 2 1 BASE EMITTER MAXIMUM RATINGS TA = 25°C Rating Collector-Base Voltage Symbol Value v (BR)CBO -6 0 Vdc


    OCR Scan     		PDF MSB709-RT1 318D-03, SC-59 3b72S5

    Q62702-D1070

    Abstract: TRANSISTOR D 1785 BD430
    Text: asc D • â23SbOS OüOMBS'i 5 m Z I Z G ■ BD 430 PNP Silicon Planar Transistor ',cr. 0 4 3 5 9 SIEMENS AKTI EN 6E SE LL SCH AF D T -3 3 -/ 7 BD 4 3 0 is an epitaxial PNP silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 4 2 9 it is particularly suitable for use in


    OCR Scan     		PDF T-33-/7 Q62702-D1070 fl23Sb05 Q0043b2 BD430 Q62702-D1070 TRANSISTOR D 1785 BD430

    Untitled

    Abstract: No abstract text available
    Text: PLESSEY S E N I CO ND /D IS CR ET E 7220533 PLESSEY "t S dT | 7 5 H Q S 3 B G005GÛ5 1 95D 05085 SEM ICO ND/DI SCRETE 7 PNP silicon planar high voltage transistor ~ D 31-21 BF493SP FEATURES • 3 5 0 V V CE0 • Low leakage currents DESCRIPTION This transistor is designed specifically for use


    OCR Scan     		PDF G005G BF493SP 300/j

    process 65

    Abstract: MMBT3640 PN3640 PN4258
    Text: ss ss M-cr: c ì i m u i . - r r r o r? PN3640 MMBT3640 PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum RdtlflQ S


    OCR Scan     		PDF PN3640 MMBT3640 OT-23 PN4258 process 65 MMBT3640 PN3640

    2SA1042

    Abstract: FUJITSU 2SC2431 2SC2431 2SA1041 2SC243 2SC2432
    Text: FUJITSU MI CR OEL ECT RONICS 31E » E3 3 7 4 ^ 2 GOlbSOQ b E3FMI T- 3 3 -Ì3 _ _ January 1990 ^ _ , „ - — PRODUCT PRO FILE - ' FUJITSU 2SA1041, 2SA1042, 2SC2431, 2SC2432 Silicon High Speed Power Transistor DESCRIPTION This series are silicon PNP/NPN planer general purpose, high power switching


    OCR Scan     		PDF T-33-Z3 2SA1041, 2SA1042, 2SC2431, 2SC2432 2SA1042 FUJITSU 2SC2431 2SC2431 2SA1041 2SC243 2SC2432

    transistor tt 2206

    Abstract: TT 2206 transistor LT1817 transistor LT5817
    Text: MOTOROLA SC XSTRS/R F MbE D b3b?ES4 00=14220 1 «flO Tt, MOTOROLA • SEMICONDUCTOR TECHNICAL. DATA I n LT5817 The RF Line PNP S ilicon High Frequency Transistor Iq = —400 m A HIGH FREQUENCY HIGH VOLTAGE TRANSISTOR PNP SILICON . . . s p e cific a lly d esig ned fo r CR T d riv e r a p p lic a tio n s req u irin g h ig h v o lta g e and high


    OCR Scan     		PDF LT5817 LT1817 transistor tt 2206 TT 2206 transistor LT1817 transistor LT5817

    transistor E 13009

    Abstract: transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009
    Text: TOSHIBA {D IS CR ETE/O P TO } ' ÌO d | ^ 7550 0 0 1 b 4 ì3 T~ * 1 - Z 3 £ | «Transistors Small Signal Transistor T ype No. V e» SOT-23MOD V le (mA) hn V ce (V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 1 0 0 -3 0 0 1.0 10


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4I26 2N4400 2N4401 transistor E 13009 transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009

    transistor h 1061

    Abstract: No abstract text available
    Text: ROHM CO 4ÜE LTD T Ä S B 'm D QOQbBST h 7 > y 7 $ / T ransistors 7 FM Y3 y z 2 7 - 2 ,7 • 1 *1 ■ W -f K v ri/ty ln v e rte r Driver Epitaxial Planar Dual Mini-Mold PNP/NPN Silicon Transistor • [S/Dimensions Unit: mm 2 D HUH • F e atu re 1) A su p e r-m in im o id p a c k a g e h ouses 2


    OCR Scan     		PDF

    BB313

    Abstract: WO2 transistor MSA035 BCP69 WO-2
    Text: • bbS3T31 QGEMS30 flee * A P X N AMER PH ILI PS/ DI SC RE TE B CP69 b?E ]> A_ SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a plastic microminiature envelope, intended for low-voltage, high-current LF applications. QUICK REFERENCE DATA Collector-emitter voltage VgE = 0


    OCR Scan     		PDF bbS3T31 QGEMS30 BCP69 OT-223 BB313 WO2 transistor MSA035 BCP69 WO-2

    2N5685

    Abstract: 2N5685 MOTOROLA 2n5684 MOTOROLA 2N5686 2N5686 amplifier 2N5686
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N 5684 High-Current Com plem entary Silicon Power TVansistors NPN 2N5685 . . . designed for use In high-power amplifier and switching circuit applications. • • • 2N 5686* High Current Capability — lc Continuous = 50 Amperes.


    OCR Scan     		PDF 2N5685 2N5684 2N5686 2N5685 MOTOROLA MOTOROLA 2N5686 2N5686 amplifier 2N5686

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor Arrays PU4312 PU4312 Silicon NPN/PNP Epitaxial Planar Type Package Dimensions Power Amplifier, Switching • Features • L ow c o lle c to r-e m itte r sa tu ra tio n v o lta g e VcEisatj • G ood lin earity o f DC cu rre n t gain (Iife )


    OCR Scan     		PDF PU4312 DQ17G4b P114312

    2N5583

    Abstract: MRF558
    Text: I MOT OROL A SC XSTRS/R F 4bE D b3b?254 OO^ MOf l e T •MOTb MOTOROLA SEM ICONDUCTOR TECHNICAL DATA The RF Line Ip = -5 0 0 m A HIGH FREQUENCY TRANSISTOR PNP SILICON HIGH FREQUENCY TRANSISTOR PNP SILICON . . . designed for applications in high frequency amplifiers and


    OCR Scan     		PDF MIL-S-19500 MRFS583HX, MRF5583HXV 2N5583 b3b72S4 MRF558

    TP5000

    Abstract: No abstract text available
    Text: DTA143TSA Digital transistor, PNP, with 1 resistor Features Dimensions Units : mm available in SPT (SC-72) package DTA143TSA (SPT) a built-in bias resistor allows inverter circuit configuration without external input resistors bias resistor consists of a thin-film


    OCR Scan     		PDF DTA143TSA SC-72) DTA143TSA TP5000