TRANSISTOR CR SOT23 Search Results

Contextual Info: Q 0 E S 3 C1S TOM • APX ^53^31 Philips Semiconductors N AUER PHILIPS / D I S CR E T E b?E Product specification J> PNP 5 GHz wideband transistor DESCRIPTION £ BFT93 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF

BF747

Abstract: MBB400 DB64 transistor HJ 388
Contextual Info: Philips Sem iconductors — bb53^31 00E4bfll l ? 5 N AMER P H IL IPS /D IS CR ET E MAPX b?E Product specification NPN 1 GHz wideband transistor FEATURES £ BF747 PINNING • Stable oscillator operation PIN DESCRIPTION Code: E15 • High current gain • Good thermal stability.

transistor E 13009

Abstract: transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009
Contextual Info: TOSHIBA {D IS CR ETE/O P TO } ' ÌO d | ^ 7550 0 0 1 b 4 ì3 T~ * 1 - Z 3 £ | «Transistors Small Signal Transistor T ype No. V e» SOT-23MOD V le (mA) hn V ce (V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 1 0 0 -3 0 0 1.0 10

BFR53

Abstract: transistor 1061 transistor h 1061
Contextual Info: • 1.1,S3 S 31 00251Mb MS3 H A P X Philips Semiconductors Product specification AflER P H I L I P S / D I S C R E T E b7E D NPN 2 GHz wideband transistor DESCRIPTION BFR53 PINNING NPN transistor in a plastic SOT23 envelope. It is intended for application In thick and thin-film

transistor cross reference

Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Contextual Info: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC

Contextual Info: bbS3^31 002514b MS3 H A P X Philips Semiconductors N AKER PHILIPS/DISCRETE Product specification b7E D NPN 2 GHz wideband transistor DESCRIPTION c BFR53 PINNING NPN transistor in a plastic SOT23 envelope. It is intended for application in thick and thin-film

MMBA813S4

Contextual Info: MOTOROLA SC iDIOD ES/ OPTO} 6367255 MOTOROLA 34 SC Ï F | b 3 b ? a S S □03fl57ti D 34C DIODES/OPTO 38276 T~z,n~tf SOT23 (continued) MMBA813S2,3,4 d e v ic e no . SMALL-SIGNAL PNP TRANSISTOR TOP VIEW C | • Designed for audio amplifier and driver applications.

MMBA813S3

Abstract: motorola opto MMBA813S2 MMBA813S4
Contextual Info: 34 MOTOROLA SC i D I O D E S / O P T O 6367255 MOTOROLA SC Î F |t . 3 b ? a S S 003fl27t. 0 34C DIO DES/O PTO 38276 T - Z 'T - t f SOT23 (continued) MMBA813S2,3,4 d e v ic e no . SMALL-SIGNAL PNP TRANSISTOR TOP VIEW C | • Designed for audio amplifier and driver applications.

sot-23 npn marking code cr

Abstract: sot23 marking CR CR SOT-23 sot23 code CR cq 037 G sot-23 MARKING CODE CR 2SC2411 sot23 marking CR A J V D transistor SOT23 CR transistor marking 04
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC2411 FEATURES Pb z Power dissipation: PCM=200mW Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor SOT-23 ORDERING INFORMATION Type No. 2SC2411 Marking Package Code

Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC2411 FEATURES z Power dissipation: PCM=200mW z High ICM MAX. ,I CM(MAX.)=0.5mA. z Low VCE(sat). z Complements the 2SA1036. Pb Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor

30255

Abstract: qSOT-23
Contextual Info: M O T O R O L A SC i D I O D E S / O P T O } 6 3 6 7 2 5 5 M O T O R O L A SC 34 DF|b3b72SS DIODES/OPTO 34C 003Ô2SS q 30255 SOT23 (continued) BCW66F,G,H DEVICE NO. SMALL-SIGNAL NPN TRANSISTOR TOP VIEW C I I • *— ' - t =i B Device D e s ig n e d fo r lo w -freq u en cy d river s ta g e an d switching

ZVN4306A TO-5

Abstract: ZTX618 power supply IRF830 APPLICATION mosfet driver with npn transistor high gain PNP POWER TRANSISTOR SOT23 npn high voltage transistor 500v sot23 zvn4306 AN18 irf830 datasheet pnp 500v
Contextual Info: Application Note 18 Issue 1 March 1996 Power MOSFET Gate Driver Circuits using High Current Super-β Transistors 6A Pulse Rated SOT23 Transistors for High Frequency MOSFET Interfacing Neil Chadderton The pow er M OS F ET is c omm only presented and regarded as a voltage

Contextual Info: ZXSC400 LED DRIVER BOOST CONVERTER DESCRIPTION The ZXSC400 is a voltage m ode boost converter in the SOT23-6 package. Its low feedback voltage allow s the current in a chain of LEDs to be set and accurately m onitored w ith a single resistor giving m inim al losses. Its excellent load and line

Contextual Info: SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR FMMT413 PROVISIONAL DATASHEET ISSU E 2 - MARCH 1996 FEATURES * A v a la n c h e m o d e operation * 5 0 A Peak a va la n ch e current * L o w inductance p a cka gin g A P P L IC A T IO N S * L a se r L E D d riv e rs

Contextual Info: b b 5 3 ci31 002S3bb 003 H A P X Philips Semiconductors Product specification b?E D N AMER PH ILI PS/ DI SC R ETE £ NPN 5 GHz wideband transistor FEATURES • BFT25A PINNING Low current consumption 100 p A - 1 mA • Low noise figure • Gold metallization ensures

Contextual Info: March 1993 2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode field effect transistors are produced using National’s very high cell density third generation DMOS technology. These products have been

Contextual Info: KSC3123 NPN EPITAXIAL SILICON TRANSISTOR MIXER FOR VHF TV TUNER SOT-23 Gce = 2 3dB Cre - 0 . 4 p F ABSOLUTE MAXIMUM RATINGS T a = 2 5 ° o Unit Symbol Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current

Contextual Info: b?E D Philips Semiconductors Datasheet status Product specification date of issue July 1993 • bbS3^31 0 0 23 ^1 ^ TTfl ■ APX BSS123 NAf1ER philips/1>;,:scre:te: N-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES • Direct interface to C-MOS, TTL,

NPN transistor SST 117

Abstract: transistor npn Epitaxial Silicon SST 117 S 9018 H 331 transistor Transistor MJE 5331 bfr540 equivalent transistor 9018 NPN BFR505 BFR540 URA698 transistor bf 760
Contextual Info: P h iJ ip ^ e m lc o n d u c t o r ^ ^ ^ ^ ^ ^ b b 5 3 T 3 lD □ 3 n b^ SM7 M AP X Product specification NPN 9 GHz wideband transistor _ FEATURES ^ i N AUER BFR540 P H IL IP S /D IS C R E T E bTE PINNING • High power gain • Low noise figure PIN DESCRIPTION

CR SOT23

Abstract: SOT-23 CP CR SOT-23
Contextual Info: 2SC2411 SOT-23 Transistor NPN 1. BASE 2. EMITTER 3. COLLECTOR SOT-23 Features — High ICMax.ICMax. = 0.5mA — Low VCE(sat).Optimal for low voltage operation. — Complements the 2SA1036 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value

IRF 4145

Abstract: KSC2756 marking uma samsung tv gee transistor
Contextual Info: AMSUN6 SEMICONDUCTOR INC KSC2756 14E D | 7^4142 QOOb^k 2 | NPN EPITAXIAL SILICON TRANSISTOR T -3 1 -1 5 MIXER FOR VHF TV TUNER SOT-23 • HIGH Gee lÿp. 23d8 ABSOLUTE MAXIMUM RATINGS (T8=25°C) Characteristic • Rating Symbol Collector-Base Voltage Coiector-Emitter Voltage

transistor smd marking CQ

Abstract: transistor smd marking CR transistor cr marking transistor smd marking CQ MARKING SMD npn TRANSISTOR transistor smd cr transistor CR NPN 2SC2411K
Contextual Info: Transistors SMD Type Medium Power Transistor 2SC2411K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 NPN silicon transistor 0.55 Low VCE sat . Optimal for low voltage operation. +0.1 1.3-0.1 +0.1 2.4-0.1 High ICMax. ICMax. = 0.5A 2 +0.1 0.95-0.1

Contextual Info: Contents Features . 1 Applications. 1 Block Diagram . 2

Contextual Info: KSC2734 NPN EPITAXIAL SILICON TRANSISTOR MIXER, OSC. FOR UHF TV TUNER SOT-23 High fT: 3.5GHz TYP ABSOLUTE MAXIMUM RATINGS (Ta= 25°C ) Characteristic Collector-Base Voltage Collector-Emltter Voltage Emitter-Base Voltage Collector Current (DC) Collector Dissipation