TRANSISTOR D 1991 AR Search Results

BUK474-600B

Contextual Info: Philips Com ponents D ata sheet status Preliminary specification d ate of issue March 1991 BUK474-600B PowerMOS transistor SbE D PHILIPS INTERNATIONA GENERAL DESCRIPTION N -channel enhancem ent mode field-effect power transistor in a plastic full-pack envelope.

Contextual Info: 7 ^ 3 9 - 0 ? Philips Components D ata sheet status Preliminary specification d ate of issue March 1991 PHILIPS PowerMOS transistor SbE international GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.

BUK426-800A

Contextual Info: Philips Com ponents Data sheet status Product specification BUK426-800A/B PowerMOS transistor date of issue March 1991 PHILIPS INTERNATIONAL SbE D 1_ I GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

Contextual Info: Philips Components D ata sheet status Preliminary specification d ate of Issue March 1991 BUK441-60A/B PowerMOS transistor PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

TL-250

Abstract: tl250 BUK993-60A BUK9y3-60A transistor tic 698 vmk 5 pin
Contextual Info: ' 7 ^ 3 >9 ~ ? D Philips Components Data sheet status Preliminary specification date of issue March 1991 BUK993-60A PowerMOS transistor Logic Level SensorfET philips international 5bE D I_ GENERAL DESCRIPTION N-channel enhancement mode

BUK551-60A

Abstract: BUK551-60B T0220AB WY transistor
Contextual Info: Philips Components D ata sheet status Preliminary specification d ate of issue March 1991 PowerMOS transistor Logic level FET 5 INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device Is intended for use in

Transistor Bo 17

Abstract: BUK426-50A BUK426-60A BUK426-60B PINNING-SOT199
Contextual Info: PHILI PS INTERNATIONAL 5L.E T> 711DÖ2b D D M m i 5 IPHIN Philips Components D ata sheet status Product specification d ate o f issue March 1991 BUK426-60A/B 7^39-t/ PowerMOS transistor Replaces BUK426-50A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

BVJ 47

Abstract: transistor B42 BUK442 BUK442-60A BUK442-60B 3909 d044
Contextual Info: 7 ^ 3 9 - 0 ? Philips Components Data sheet status Preliminary specification d ate of issue March 1991 PowerMOS transistor SbE T> INTERNATIONAL PHILIPS GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope,

BUK442

Abstract: BUK442-60A BUK442-60B 1e47
Contextual Info: 7 ^ 3 9 - 0 ? Philips Components Data sheet status Preliminary specification d ate of issue March 1991 PHILIPS PowerMOS transistor SbE T> INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent m ode field-effect pow er transistor in a lastic full-pack envelope,

BUK475-400B

Abstract: LD25C BUK475 3909
Contextual Info: Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 PHILIPS BUK 475-400B PowerMOS transistor INTERNATIONAL SbE D i- 1 GENERAL DESCRIPTION N-channel enhancem ent m ode

TRansistor L 701

Abstract: vmk 5 pin BUK995-60A
Contextual Info: Philips Components Data sheet Preliminary specif ication status date of issue March 1991 9 0 BUK995-60A PowerMOS transistor Logic Level SensorFET 5bE D PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent mode logic level field-effect power transistor in a 5 pin plastic

TRANSISTOR P3

Abstract: BUK427-400B philips kt
Contextual Info: Philips Components D ata sheet status Product specification date of issue March 1991 PowerMOS transistor SbE PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channe! enhancem ent mode field-effect pow er transistor in a plastic full pack envelope. The device is intended fo r use in

BUK426-1000A

Abstract: BUK426-1000B BUK426-100
Contextual Info: 7Z39-// Philips Components Data sheet status Product specification date of issue M arch 1991 B U K 426 - 1OO OA/B PowerMOS transistor PHILIPS INTERNATIONAL SkE D • 711082b 004M135 SSI H P H I N GENERAL DESCRIPTION

DH47

Abstract: BUK571 BUK571-100A BUK571-100B buk541-100 K571
Contextual Info: Philips Components D ata sheet status Prelim inary specification date of issue M arch 1991 R eplaces B U K 54 1-1 00A /B BUK571-100A/B PowerMOS transistor Logic level FET SbE D PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power

Contextual Info: SbE D PHILIPS INTERNATIONAL Philips Components_ D a ta s h e e t status Preliminary specification d a te o f issue March 1991 Replaces BUK542-60A/B GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

D4MB

Contextual Info: PHILIPS INTERNATIONAL Data sheet status Preliminary specification date of issue March 1991 Sfc.E D • 711Qfl2b □ D4 Mb bti 17T « P H I N BUK 476-1000A/B PowerMOS transistor Replaces BUK446-1000A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

Contextual Info: 7 = 5 ? Philips Components D ata sheet status Product specification date of issue March 1991 BUK427-500B PowerMOS transistor SbE D P H I L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope.

harris 3096

Contextual Info: H A R R IS SEfllCOND SECTOR HARRIS 40E D B 4 3 D 2 2 7 1 0D3S30M T I IHAS GA3096, CA 3096A CA3096C N -P -N /P -N -P Transistor Arrays August 1991 CA3096A, CA309G, CA3096C Essentia/ Differences Applications • Five-Independent Transistors ►Three N-P-N and

Contextual Info: Philips Semiconductors BS107 Data sheet status Prelim inary specification date of issue February 1991 N-channel enhancement mode vertical D-MOS transistor FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET PIN CONFIGURATION FEATURES

BUK451-60A

Contextual Info: Philips Components Data sheet status Preliminary specification date of issue March 1991 BUK451-60A/B PowerMOS transistor PH I L IP S I N T E R N A T I O N A L SbE D I_ i GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

k426

Abstract: bu 515 BUK426-50A transistor 03e Transistor Bo 17
Contextual Info: PHILIPS 5L.E T> INTERNATIONAL 711DÖ2b D D M m i 5 IPHIN Philips Components D ata sheet status Product specification d ate o f issue March 1991 B U K 4 2 6 - 6 0 A /B PowerMOS transistor 7^ 39- t/ Replaces BUK426-50A/B GENERAL DESCRIPTION N-channel enhancement mode

BUK427-600B

Contextual Info: 7 ^ 3 9 - / / Philips Com ponents Data sheet status P r o d u c t s p e c ific a tio n date of issue March 1991 PHILIPS BUK427-600B PowerMOS transistor INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic füll pack envelope.

D0447

Abstract: K572 00M4 Scans-00501 BUK572 12VBS
Contextual Info: PHILIPS 5bE INTERNATIONAL D • 711002b 00M4704 DT3 ■ Philips Components_ Datasheet status Preliminary specification date of issue March 1991 Replaces BUK542-60A/B GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

FUH -29A001B

Abstract: buk638 BUK638-800A BUK638-800B WO 02S
Contextual Info: Philips Components D atasheet status Prehmriary specification * * • of Im o * March 1991 GENERAL DESCRIPTION N-channel enhancement mode fieW-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable tor motor control applications, eg. in