TRANSISTOR D 471 Search Results

Contextual Info: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D087 BSP122 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 23 2001 May 18 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor

Contextual Info: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D087 BSP89 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 23 2001 May 18 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor

Contextual Info: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D109 BSS87 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 June 23 2001 May 18 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor

transistor NEC D 822 P

Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters

TRANSISTOR D 471

Abstract: BP317 BSS87 MBB692
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BSS87 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 June 23 2001 May 18 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor

TRANSISTOR D 471

Abstract: BP317 BSP89 MBB691 MBB692 SC-73
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BSP89 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 23 2001 May 18 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor

TRANSISTOR D 471

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BSP122 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 23 2001 May 18 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor

MAM355

Abstract: msa63
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BSS87 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 June 23 2001 May 18 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor

04547

Abstract: 5401 DM
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BSP89 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 23 2001 May 18 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor

TRANSISTOR D 471

Abstract: bs108
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BS108 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 17 2001 May 18 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor

m8 smd transistor

Abstract: "MARKING CODE M8" TRANSISTOR D 471 smd transistor m8 TRANSISTOR SMD MARKING CODE oc MAM356 smd transistor marking m8 transistor smd M8 BSN20W TRANSISTOR SMD CODE PACKAGE SOT323
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BSN20W N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 20 2000 Mar 10 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor

Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES BSP130 QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. SYMBOL DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use

BUK551-100A

Abstract: BUK551-100
Contextual Info: P ro d u ct S pe cifica tion P hilip s S em ico n d u cto rs PowerMOS transistor BUK551-100A/B Logic level _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

BUK551-100A

Abstract: BUK551-100B T0220AB
Contextual Info: N AMFR P H I L I P S / D I S C R E T E bTE D • ^53^31 QQ3D77S QT1 ■ APX Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level fleld-effect power transistor in a plastic envelope.

ULN2003A 15 pin details application

Abstract: pin details of ULN2003A ULN2003AN ULN2003AD ULN2003ANSR ULN2003AJ ULN2003ADRE4 ULN 283
Contextual Info: ULN2001A, ULN2002A, ULN2003A, ULN2004A, ULQ2003A, ULQ2004A HIGHĆVOLTAGE HIGHĆCURRENT The ULN2001A is obsolete DARLINGTON TRANSISTOR ARRAY and is no longer supplied. SLRS027G − DECEMBER 1976 − REVISED JUNE 2004 D 500-mA-Rated Collector Current D D D D

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

TRANSISTOR GB 558

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •

Contextual Info: N AMFR PHILIPS/DISCRETE b'lE D • bbS3^31 0030775 0^1 * A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

BLV36

Abstract: TRANSISTOR D 471 2222 372 2222 379 RF POWER TRANSISTOR NPN vhf RF push pull power amplifier vhf linear amplifier L15A television vhf linear pulse power amplifier blv36
Contextual Info: PHILIPS INTERNATIONAL bSE D D 711002t. DOba^OÔ SE2 • PHIN BLV36 A VHF LINEAR PUSH-PULL POWER TRANSISTOR T w o NPN silicon planar epitaxial transistor sections in one envelope to be used as a push-pull amplifier. This device is prim arily intended for use in linear V H F television transmitters and transposers vision or

PHD24N03LT

Contextual Info: PHD24N03LT N-channel enhancement mode field-effect transistor Rev. 02 — 27 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHD24N03LT in SOT428 D-PAK .

Contextual Info: PHD24N03LT N-channel enhancement mode field-effect transistor Rev. 02 — 27 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHD24N03LT in SOT428 D-PAK .

Contextual Info: PHD20N06T N-channel TrenchMOS transistor Rev. 01 — 22 February 2001 Product specification M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHD20N06T in SOT428 D-PAK .

PHD83N03LT

Abstract: PHD83
Contextual Info: PHD83N03LT N-channel enhancement mode field-effect transistor Rev. 01 — 16 July 2001 Product data M3D300 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHD83N03LT in a SOT428 D-PAK .