TRANSISTOR D 822 P Search Results

telefunken IC 121

Contextual Info: S 822 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise, low current, low voltage, high gain, 50 Ohm transistor for 945 MHz cordless telephone, pager, and low current UHF remote control applications. Features D Low noise figure

sot234 jt

Contextual Info: INTEGRATED CIRCUITS PCA84C122; 222; 422; 622; 822 8-bit microcontrollers for remote control transmitters Product specification Supersedes data of February 1994 File under Integrated Circuits, IC14 Philips Semiconductor PHILIPS 7110fl2b 006^077 TOT 1995 May 01

Hitachi DSA002734

Contextual Info: Hitachi Single-Chip Microcomputer H8/3052 F-ZTATTM HD64F3052TE, HD64F3052F, HD64F3052BTE, HD64F3052BF, HD64F3052BVTE, HD64F3052BVF Hardware Manual ADE-602-180A Rev. 2.0 3/23/2001 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s

transistor Siemens 14 S S 92

Abstract: 2sc 3150 transistor BRY 56 C Bry 56 BRY 66 A BRY 56 B
Contextual Info: ESC D • fl23StiQS 0004773 1 MS I E G , Programmable Unijunction Transistor BRY 56 7” ^ o f SIEMENS AKTIENGESELLSCHAF Programmable silicon planar unijunction transistor in TO 92 plastic package 10 A 3 DIN 41868 . K8max Type Ordering code BRY561» BRY 56 A

MJE2370

Abstract: 2sc 1473
Contextual Info: MJE2370 silicon 3.0 AMPERE POWER TRANSISTOR PNP SILICON MEDIUM-POWER TRANSISTOR PNP SILICON . . . designed for use in general-purpose amplifiers as drivers and as switches. • Low Collector-Emitter Saturation Voltage V cE(sat) = 0-7 Vdc (Max) @ l c “ 1.0 Ade

ON Semiconductor marking 821

Contextual Info: SIEMENS BCR 583 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10ki2,R2=10kS2 Type Marking Ordering Code Pin Configuration BCR 583 XMs 1=B Q62702-C2385 Package 2=E 3=C SOT-23 Maximum Ratings

BUX45

Abstract: transistor et 460
Contextual Info: * B U X 45 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE ^Preferred device D isp o sitif recommandé High speed, high voltage, switching transistor Transistor de commutation , rapide , haute tension Thermal fatigue inspection

MG160S1UK1

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG160S1UK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Collector • With Built-in • High DC is Isolated from Case Free Whee l i n g Diode C u r r e n t G a in: hpg=100 Min. (IC =1 6 0 A )

BLX13

Abstract: BLX13A C 3311 transistor HF band power amplifier philips 3h1 transistor f PH ON 823 philips Fxc 3 b SOT-56 transistor c 1971
Contextual Info: II PHI L IP S I N T E R N A T I O N A L MAINTENANCE TYPE MIE B J> 7110flSb O D E 7 7 C H 2 D P H I N II BLX13 H.F./V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for s.s.b. in class-A and AB and in f.m. transmitting appli­ cations in class-C with a supply voltage up to 28 V. The transistor is resistance stabilized and tested

Contextual Info: TLP822JLP826 TLP827 INFRARED LED + PHOTO TRANSISTOR T IP 822 VCR, COMPACT DISK PLAYER FLOPPY DISK DRIVE, FACSIMILE, PRINTER VENDING MACHINE, TICKETING MACHINE FOR VARIOUS POSITION DETECTION The TLP822, TLP826, and TLP827 are photo interrupters with a high radiant power infrared LED and

stetron

Contextual Info: V A R IS TO R ^^v , , .' , '’ -V y * ; $ h \ } T •'•'•. ' ■ ■ ?‘- - * ■ . . ■ % Diffused Junction Silicon Types and Sili.çon Carbide Types D IFFU S ED J U N C T IO N S ILIC O N VA R IS TO R S STETRON diffused junction Silicon varistors are special diode

transistor NEC D 822 P

Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters

Contextual Info: TO SHIBA 2SA1822 2 S A 1 822 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS HIGH SPEED DC-DC CONVERTER APPLICATION Î.2 ± 0.2 1 0 1 0.3 • Excellent Switching Times ton = 1.0//s Max. , tf=1.0,«s (Max.) at I e = - 0 .3 A

D 823 transistor

Abstract: transistor PH ON 823 m
Contextual Info: Philips Semiconductors • bbSBTBl QDHimD bbfi H A P X Product specification N AUER PHILIPS/D ISCR ETE b?E D NPN 5 GHz wideband transistor DESCRIPTION NPN planar epitaxial transitor mounted in a plastic SOT223 envelope. It features excellent output voltage

BFG96

Abstract: TRANSISTOR P3 1351 NPN TRANSISTOR BFG32 V 904 RL 805 transistor SOT103 bfg96 scattering 803 0863 FP 801 h a 431 transistor
Contextual Info: -7- ^ P h ilip s S em icon du ctors ^ /-rZ -g Product sp ecification BFG96 NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL D E S C R IP T IO N N P N transistor in a 4-lead dual-em itter plastic S O T 1 0 3 envelope. It is designed for application in w ideband am plifiers, such a s M A T V

HD64F3052F

Abstract: 868 printed antenna design HD64F3052BF HD64F3052BTE HD64F3052BVF HD64F3052BVTE HD64F3052TE TAA 691
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003.

H8/3052

Abstract: HD64F3052F HD64F3052BF HD64F3052BTE HD64F3052BVF HD64F3052BVTE HD64F3052TE 8420a
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

TRANSISTOR ML6

Contextual Info: bb53T31 0031772 E7T * A P X Philips Semiconductors Product specification NPN 6 GHz wideband transistor ^ BFQ270 N FEATURES AUER PHILIPS/DISCRETE h^Z T> PINNING PIN • High power gain • Emitter-ballasting resistors for good thermal stability • Gold metallization ensures

transistor d 2389

Contextual Info: PRELIMINARY DATA SHEET_ \|F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm

ANT019

Abstract: U2270B 1N4148 BC639 BC846 U2270B-FP immobilizer car 125 HC-470
Contextual Info: Features • • • • • • • • • Carrier frequency fosc 100 kHz - 150 kHz Typical data rate up to 5 kbaud at 125 kHz Suitable for Manchester and Bi-phase modulation Power supply from the car battery or from 5-V regulated voltage Optimized for car immobilizer applications

marking 822

Abstract: transistor IC 1557 b Telefunken u 257
Contextual Info: Temic S822T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features •

DH0034D

Abstract: DH0034 24v to 5v level shifter D14D DH0034H-MIL H10F 3L50 dh0034h
Contextual Info: DH0034 SflE J> bSÜHSM gg National Æm Semiconductor GG77A24 fl7b •NSCE1 NATL SEMICOND LINEAR -P 3 Z - H DH0034 High Speed Dual Level Translator General Description Features The DH0034 is a high speed level translator suitable for interfacing to MOS or junction FET analog switches. It may

HP-VFQFP-N16

Abstract: T7023 T7023-DB T7023-PEQ T7023-PES 2.tx transistor
Contextual Info: Features • • • • • • Single 3-V supply voltage High-power-added efficient power amplifier Pout typ. 23 dBm Ramp-controlled output power Current-saving standby mode Few external components HP-VFQFP-N16 ISM/BluetoothTM 2.4-GHz Power Amplifier Electrostatic sensitive device.

2SA1822

Abstract: A1822 DC DC converter 5v to 200V ic
Contextual Info: TOSHIBA 2SA1822 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S A 1 822 HIGH VOLTAGE SWITCHING APPLICATIONS Unit in mm HIGH SPEED DC-DC CONVERTER APPLICATION r • Excellent Switching Times ton = l-0/«s Max. , tf= 1 .0 /«s (Max.) at Iç)= —0.3A