7110FLSB Search Results

Contextual Info: BDT65F; BDT65AF BDT65BF; BDT65CF PHILIPS INTERNATIONAL SbE 7110flSb 00435^0 4Sci M P H I N T ~ 33 SILICON DARLINGTON POWER TRANSISTORS N PN silicon darlington power transistors in a S O T 1 8 6 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.

ltd133

Abstract: 7 segments display philips LTD133F-21 12 pin 7 segment clock Liquid Crystal 12 pin 4 digit 7 segment display
Contextual Info: PHILIPS INTERNATIONAL Data sheet status Product specification date of issue July 1990 . bOE 7110flSb 0 D 5 7 0 2 5 7' 4 LTD133 Ü51 IPHIN /S t Liquid crystal display DEVICE DESCRIPTION The LTD133 is a 3 1/2-digit 7 segment clock display with AM and PM functions. It is designed for use with the

NDS 40-20

Abstract: BUK437-500B DIODE BB2
Contextual Info: PHILIPS INTERNATIONAL fc.5E D m 7110flSb □□t.3c121 RS3 • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

tam s8

Abstract: C101 LTA343F-11 LTA343R-11
Contextual Info: PHILIPS INTERNATIONAL Data sheet status Pro du ct specification date of issue J u ly 1990 bOE D I 7110flSb 0 0 5 7 G 1 3 30T LTA343 Liquid Crystal Display QUICK REFERENCE DATA DEVICE DESCRIPTION The LTA343 is a 40-character, 2-line dot matrix display. Typical applications include hand held equipment and

transistor tt 2222

Abstract: Trimmer 10-60 pf transistor h 1061 15 w RF POWER TRANSISTOR NPN bly87c IEC134 yl 1060
Contextual Info: PHILIPS INTERNATIONAL b SE D • 7110flSb GübBSt.3 «PHIN BLY87C J V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and

b57 diode

Abstract: M3245 M3244 diode 1123 07s BR211 BR211-100 M3243 BI 1123 M324
Contextual Info: 5bE D • 7110flSb 0G410 bD ÛÔ4 D E V E LO P M E N T DATA IPHIN T -M -2 L 3 - BR211 SERIES T h is data sheet contains advance Inform ation and specifications are subject to change w ith o u t notice. PHILIPS 5bE D ^ INTERN A T I O N A L UN BREAKOVER DIODES

BLX13

Abstract: BLX13A C 3311 transistor HF band power amplifier philips 3h1 transistor f PH ON 823 philips Fxc 3 b SOT-56 transistor c 1971
Contextual Info: II PHI L IP S I N T E R N A T I O N A L MAINTENANCE TYPE MIE B J> 7110flSb O D E 7 7 C H 2 D P H I N II BLX13 H.F./V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for s.s.b. in class-A and AB and in f.m. transmitting appli­ cations in class-C with a supply voltage up to 28 V. The transistor is resistance stabilized and tested

2N3020

Abstract: 2N3019
Contextual Info: 2N3019 2N3020 JL PHILIPS INTERNATIONAL SbE T> I 7110flSb D0L»2b40 37^ • PHIN 7= 35" SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes intended for use as amplifiers and in switching circuits. QUICK REFERENCE DATA Collector-base voltage open emitter

MPS3640

Contextual Info: Philips Sem iconductors_ 7- 3 7 - 1/ PNP 1 GHz switching transistor PHILIPS INTERNATIONAL DESCRIPTION Product specification 5bE D • -^ MPS3640 7110flSb D D M b D b T Sbfl ■ P H I N PINNING PNP general purpose switching

Contextual Info: BDT60F; BDT60AF BDT60BF; BDT60CF _z PHILIPS INTERNATIONAL SbE D • 7110flSb 0043212 77fl ■ P H I N SILICON DARLINGTON POWER TRANSISTORS T~3 PNP silicon power transistors in a monolithic Darlington circuit and housed in a SOT186 envelope with an electrically insulated mounting base.

dd1041

Abstract: 74ABT244 74ABT244D 74ABT244DB 74ABT244N 74ABT244PW
Contextual Info: INTEGRATED CIRCUITS 7 4 A B T 2 4 4 Octal buffer/line driver 3-State Product specification 1995 May 22 IC23 Philips Semiconductors PHILIPS P H ILIP S 7110flSb 00^0407 TT1 This Material Copyrighted By Its Respective Manufacturer Philips Semiconductors FAST Products

BFG741

Contextual Info: Objective specification Philips Semiconductors NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES BFG741 SbE D • 7110flSb DÜMS3S7 bTl IPHIN PINNING PIN DESCRIPTION • Low distortion • Gold metallization ensures excellent reliability 2 base

PLCC28

Abstract: TDA8718 TDA8718K IRT 1250
Contextual Info: IN TE G R A TE D C IR C U ITS IM T R ^ S P E E T TD A8718 8-bit high-speed analog-to-digital converter Product specification Supersedes data of April 1993 File under Integrated Circuits, IC02 June 1994 Philips Semiconductors PHILIPS t 7110flSb 0073701 1T1 •

h1a11

Abstract: 74ABT16
Contextual Info: INTEGRATED CIRCUITS 74ABT16244-1 16-bit buffer/line driver with 30Q series termination resistors 3-State Product specification 1995 Apr 11 IC23 Data Handbook Philips Semiconductors PHILIPS PHILIPS 7110flSb O O i n n s TDS • ' Philips Semiconductors Product specification

TDA8708T

Abstract: TDA8708 IEC134 S028 "Digital Comparator" 3117 3/TDA8708
Contextual Info: Philips Product specification T - 7 7 -0 7 -1 3 Video analog input interface TDA8708 PHILIPS INTERNATIONAL SbE D • 7110flSb 0D370L.1 Hbb ■ P H I N FEATURES GENERAL DESCRIPTION • 8-bit resolution

TIP29F

Abstract: TIP30CF TIP29AF TIP29BF TIP29CF TIP29DF TIP30AF TIP30BF TIP30DF TIP30F
Contextual Info: TIP29F TIP29AF; TIP29BF TIP29CF; TIP29DF PHILIPS INTERNATIONAL SbE D • 7110flSb 0043452 SILICON EPITAXIAL POWER TRANSISTORS lib ■ P H I N ' 7 -3 3 -0 7 NPN silicon power transistors in a SOT186 envelope with an electrically insulated mounting base, intended for use in audio output stages, general purpose amplifier and high-speed switching applications.

BUK545

Abstract: BUK545-60A BUK545-60B
Contextual Info: PHILIPS INTERNATIONAL bSE D B 7110flSb O O b m ^ b Philips Semiconductors PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope.

2N930 NPN transistor FREE

Abstract: 2n930
Contextual Info: 2N930 1 * 2 * - PHILIPS INTERNATIONAL 5LE D n _j L 7110flSb DDM25ti2 GST M P H I N N -P-N SILICON PLANAR TRANSISTOR N-P-N transistors in T O -18 metal envelopes w ith the collector connected to the case. These devices are prim arily intended fo r use in high performance, low-level, low-noise amplifier appli­

12 pin 4digit 7 segment display

Abstract: glass lcd multimeter LCD 7 segment display with 13 pins 4-DIGIT 7-SEGMENT LTD242R-12 Philips 3.5 digit 7 segment lcd display LTD242R-22 4 digit 7 segment lcd display 40 pin LTD242F-22 40 PIN 4 digit lcd display
Contextual Info: PHILIPS INTERNATIONAL bOE J> m 7110flSb D0570Ô4 bbT Philips Components_ D ata sheet status P ro du ct specification d a te of issue July 1990 LTD242 IPHIN T - its t Liquid crystal display DEVICE DESCRIPTION The LTD242 is a 4-digit, 7-segment multi-function LCD.

BFQ233

Abstract: BFQ253A BFQ233A BFQ253
Contextual Info: Product specification Philips Sem iconductors NPN 1 GHz video transistors PHILIPS INTERNATIONAL DESCRIPTION BFQ233; BFQ233A SbE I> m 7110flSb 00455^0 Tûb • PHIN PINNING NPN silicon epitaxial transistor in a SOT5 TO-39 envelope with emitter-ballasting resistors and a

BUK445-100A

Abstract: BUK445-100B BT diode BUK445
Contextual Info: PHILIPS INT ERNATIONAL bSE D WM 7110flSb O O b a W Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched M ode Power Supplies

str x 6556

Abstract: STR 6556 str w 6556 schematic digital sound processor UFN 432 TDA 810 amplifier audio crossover filter eao 02 SERIES extra bass circuit diagram n621
Contextual Info: INTEGRATED CIRCUITS m w m •I i n BITSTREAM CONVERSION TDA1546T Bitstream Continuous Calibration DAC with digital sound processing BCC-DAC Preliminary specification File under Integrated Circuits, IC01 January 1995 Philips Semiconductors PHILIPS 7110flSb OOfiblSB 764

BUK445-100A

Abstract: 1E05 BUK445 BUK445-100B
Contextual Info: PHILIPS INTERNATIONAL bSE D WM 7110flSb O O b a W Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

BUK454-500B

Abstract: 1S93 DM 321 diode 1S93
Contextual Info: PHILIPS INTERNATIONAL bSE D • 7110flSb DObHObl Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,