TRANSISTOR D 863 Search Results

Contextual Info: AN AL OG « F VI CF X INC 51E D A N A LO G D E V IC E S Dual PNP Transistor T-H3-2£r MAT-03 FEATURES Dual Matched PNP Transistor Low Offset Voltage. . Low Noise. 1nV/VHz @ 1kHz Max High G ain . .

NT 407 F TRANSISTOR

Abstract: Philips CD 303 2222 595 npn 2222 transistor BFG198 MS8002 0450 7N 2222 443 TRANSISTOR D 471 MRA transistor
Contextual Info: Philips Sem iconductors • N bbS3R31 AMER 0024SSb 7bS H IA P X P H IL IP S /D IS C R E T E b7E Product specification D NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband simplifier applications.

Contextual Info: N AMER PHILIPS/DISCRETE b^E D bbS3^31 QQ2T474 72T APX DLVVO / V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f, and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

MB87S

Contextual Info: • bbS3R31 0 0 2 ^ 5 b 7bS « A P X “ N AUER PHILIPS/DISCRETE b7E D NPN 8 GHz wideband transistor DKT c ^ Philips Semiconductors DESCRIPTION Product specification BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications.

BLX67

Abstract: mrtil transistor 3568
Contextual Info: N AMER PHILIPS/DISCRETE 8 6D ObE 01766 I D 7 -" ~ j • 1^53^31 G014DDM 3 - o Jr ~ BLX67 A U.H.F./V.H.F. POWER TRANSISTOR N-P-N silicon transistor for use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V,

2N3741

Contextual Info: 2N3741 SILICON PNP MEDIUM POWER TRANSISTOR DESCRIPTION: The 2N3741 is a Medium Power Transistor for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 66 MAXIMUM RATINGS A B C D £ f G H J K L M 4.0 A Ie o m < -80 V 25 W @ Te $ 25 °C

transistor te 2443

Abstract: 2N3740A
Contextual Info: 2N3740A SILICON PNP MEDIUM POWER TRANSISTOR DESCRIPTION: The 2N3740A is a Medium Power Transistor for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO-66 MAXIMUM RATINGS A B C D £ f G H J K L M 4.0 A Ie o m < -60 V 25 W @ Te $ 25 0C

2N3054A

Contextual Info: 2N3054A SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N 3054A is a Medium Power Transistor for General Purpose Switching and Amplifier Applications MAXIMUM RATINGS 4.0 A 10 A PEAK lc INCHES A B C D £ f G H J K L M 55 V o m < PACKAGE STYLE TO - 66 Pd is s

Contextual Info: m 2N3741 \ \ SILICON PNP MEDIUM POWER TRANSISTOR DESCRIPTION: The 2N3741 is a Medium Power Transistor for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O -66 MAXIMUM RATINGS INCHES A 6 C D E F G H J K L M 4.0 A lc O m < -80 V 25 W @ Tc = 25 °C

transistor bc 541

Abstract: TRANSISTOR BC 534 PNP transistor Siemens 14 S S 92 AF139 TRANSISTOR BC 534 Germanium power Germanium mesa
Contextual Info: 55C D • û23St.D5 OOQ405Ö T PNP Germanium RF Transistor -SIEMENS A F 139 - AKTIENGESELLSCHAF 31-07 for input stages, m ixer and oscillator stages up to 860 MHz AF 139 is a germanium PNP mesa transistor in TO 92 case 18 A 4 DIN 41876 . The leads are electrically insulated from the case.

AF139

Abstract: OOQ405 mz 1540
Contextual Info: ESC D • flE35t.05 0004056 T B IS IE G t n PNP Germanium RF Transistor AF139 -SIEMENS AKTIENGESELLSCHAF - ~ T ~ 3 I~ 0 7 for input stages, mixer and oscillator stages up to 8 6 0 M H z AF 139 is a germanium PNP mesa transistor in TO 92 case 18 A 4 DIN 41876 . The leads

2n3054a

Contextual Info: m 2N3054A \ \ SILICON NPN POWER TRANSISTOR D E SC R IP T IO N : The 2N3054A is a Medium Power Transistor for General Purpose Switching and Amplifier Applications M A XIM U M R A T IN G S 4.0 A 10 A PEAK lc V INCHES 55 V ce 75 W @ Tc = 25 °C P diss -65 °C to +200 °C

Contextual Info: DTB133HK/DTB133HS/DTB133HF DTB133HL/DTB133HA/DTB133HV h 7 > V * £ /Transistors DTB133HK/DTB133HS/DTB133HF DTB133HL/DTB133HA/DTB133HV JS taF *3lU £ H "7 > V ^ 3 0 7 ^/Transistor Switch Digital Transistors (Includes Resistors h 7 X • $ • ^ f f ^ S d /D im e n s io n s (Unit: mm)

2N6211

Abstract: te 2443
Contextual Info: 2N6211 SILICON PNP POWER TRANSISTOR DESCRIPTION: The 2N6211 is Designed for Medium Power Amplifier and Switching Applications. 2.0 A VcB 275 V 225 V o m Ic V MAXIMUM RATINGS PACKAGE STYLE TO- 66 INCHES A B C D £ f G H J K L M 35 W @ Te # 25 0C P d is s Tj

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX

Contextual Info: 32E D • fl23b320 0017Eflfi T « S I P PNP Silicon Transistor SMBT A 70 SIEMENS/ SPCL-, SEMICONDS ' *7_ • For AF input stages and driver applications • High current gain • Low coilector-emitter saturation voltage B Type Marking Ordering code for

H24A4

Abstract: H24A1 H24A2 H24A3
Contextual Info: H24A1, H24A2 H24A3, H24A4 4 PIN OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT Dimensions in mm 1 2 + D E + 4 1 9.53 DESCRIPTION The H24A series of optically coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor in a plastic package.

TVU0.5B

Abstract: B-976 transistor ASI10642 transistor 5200 976 transistor 254000
Contextual Info: TVU0.5B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU0.5B is Designed for UHF and Television Band IV & V Applications. PACKAGE STYLE .205 4L STUD D FEATURES: A • Common Emitter • PG = 12 dB at 0.5 W/860 MHz • Omnigold Metalization System

RO3010

Abstract: C14A z14b
Contextual Info: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device

J352

Contextual Info: MOTOROLA Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

balun 75 ohm

Abstract: C14A RO3010 MRF372 c9ab
Contextual Info: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

C3B Kemet

Contextual Info: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device

transistor L1A

Abstract: 1206 capacitor chip pads layout rogers capacitor bc17a 470 860 mhz PCB
Contextual Info: MOTOROLA Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this