TRANSISTOR D 965 AL Search Results

Contextual Info: VPDQ1 DIE P-Channel Enhancement-Mode MOS Transistor in c o r p o r a te d VPDQ1CHP* BSS92 TP2020L TP1220L VP2020L 0.038 ‘ Meets or exceeds specification for all part numbers listed below For additional design information please consult the 0. 965 ( 0 .254)

transistor power rating 5w

Contextual Info: A fa C pM m an A M P com pany C>N Power Transistor, 5W 2.3 GHz PH2323-5 V2.00 Features • • • • • • • NPN Silicon M icrow ave P o w er T ransistor C o m m o n B ase C o n figu ratio n C lass C O peratio n In terd igitated G e o m e try D iffu sed Em itter B allastin g R esistors

VN10KM

Contextual Info: ÜBSSb VNDP1 DIE N-Channel Enhancement-Mode MOS Transistor VNDP1CHP* VN0610L VN10KE VN10KM VN2222L ‘ Meets or exceeds specification for all part numbers listed below Gate Pad 0.0088 0 . 224 0.0063 ( 0.161 Source Pad For additional design information please consult the

Contextual Info: 19-1223; Rev O; 4/97 > k i y i x i > k i Current-Limited, High-Side P-Channe! Sw itches with Therm al Shutdown Genera! Description The MAX891L/MAX892L's maximum current limits are 500mA and 250mA, respectively. The current limit through the switch is programmed with a resistor from

Buzzer 4khz

Abstract: 1205 transistor buzzer 1205 LC5739 QFP64 p13 transistor OSC XTAL 32.768KHZ transistor 1205 transistor A 1205 12 Y
Contextual Info: Ordering number : ENN*6704 CMOS IC LC5739 4-Bit Microcontroller with LCD Driver Preliminary Overview The LC5739 is a CMOS 4-bit microcontroller that operates on low voltage and very low power consumption. It also contains 4K-byte ROM, 128-byte RAM, LCD drivers and melody function.

lm358 current sense

Abstract: lm358 16pin diagram LM324 noise Enhancement Mode MOSFET Array pin configuration of LM358 disadvantages of mosfet
Contextual Info: P W R -N C H 2 0 1 -T-39-»-» 2-Channel MOSFET Array 400 V - 675 mA per channel POWER in t e g r a l s a a a Product Highlights 2 open-drain N-channel MOSFETs per package PWR-NCH201

L42n

Abstract: HM3500 adb 630 L43n "alu 4 bit" ECL IC NAND L44N PT06-16-8P-S/transistor 03e
Contextual Info: H0NEYWE1_I_/SS ELEK-, MIL [13 I>e | 4551872 DD00212 D • “ H o n eyw e ll r - n - ll'O HM3500, hvmioooo, HE12000 Preliminary ADVANCED DIGITAL BIPOLAR GATE ARRAY FAMILY FAMILY FEATURES • Broad Performance Optimized Family Allows Flexible System Partitioning:

U820 Diode

Abstract: 0555B TDB0555B Diode BAY 61 diode u820 TDB 0555B transistor a965 nf schaltungen darlington bd 645 P430-e11
Contextual Info: S IE M E N S Technische Mitteilung aus dem Bereich Bauelemente -io idun istechnik •Anwendungstechnik *Anwendung , wendungstechr idungstechnik -Anwendungstechnik •An ldt ' ' O idungstechnik *Anwendungstechnik *A 9ndi ' • ' Integrierter Fenster­ diskriminator TCA 965

Contextual Info: Afa Satellite Communications Power Transistor PH 1600-30 30 Watts, 1.55-1.65 GHz Features • • • • • Outline Drawing C W Operation Internal Impedance Matching Common Base Configuration Multilayer Metal / Ceramic Package Gold Metallization System Absolute Maximum Ratings at 25°C

2SA606

Abstract: 2SC945 206C 2SA573 2SA574 2SA575 2SA733 SA607 2sc945b EP455
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

16f 676

Abstract: kd 503 transistor LT 5251 transistor KD 503 ccd sharp 13B1 LR36685 RJ24J3AA0PT kd 506 transistor kd 778
Contextual Info: BACK SHARP RJ24J3AA0PT DESCRIPTION The RJ24J3AA0PT is a 1/3.2-type 5.60 mm solidstate image sensor that consists of PN photo­ diodes and CCD s (charge-coupled devices). With approximately 1 310 000 pixels (1 344 horizontal x 971 vertical), the sensor provides a stable highresolution color image.

500 watts amplifier schematic diagram pcb layout

Abstract: 500 watts amplifier schematic diagram 400 watts amplifier circuit diagram with specific j327 transistor PCB Rogers RO4003 substrate smd transistor JJ m30 smd TRANSISTOR transistor RF 98 smd computherm SMD Transistor
Contextual Info: MOTOROLA Order this document by AN1670/D SEMICONDUCTOR APPLICATION NOTE AN1670 60 Watts, GSM 900 MHz, LDMOS Two-Stage Amplifier Prepared by: Jean–Jacques Bouny Principal Staff Engineer Motorola Semiconductors S.A. Toulouse, France INTRODUCTION This application note demonstrates the feasibility of a

lc 945 p transistor NPN TO 92

Abstract: lc 945 p transistor NPN lc 945 transistor lc 945 p transistor
Contextual Info: ERICSSON ^ PTB 20148 60 Watts, 925-960 MHz Cellular Radio RF Power Transistor D escription The 20148 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP applications.

Transistor TT 2246

Abstract: TT 2246 transistor tt 2246 2SC2232 transistor tt 2247 tk 2238 2SA969 2236 1F 2SA981 2SA965
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

891L

Contextual Info: 19-1223: Rev0:4/97 V M yJX IV M Current-Limited, High-Side P-Channei Switches with Thermmi Shutdown The MAX891L/MAX892L’s maximum current limits are 500m A and 250mA, resp ective ly. The cu rre n t lim it through the switch is programmed with a resistor from

Contextual Info: 19-1223; Rev 0; 4/97 Curre nt -Lim it e d, H igh-Side P-Cha nne l Sw it c he s w it h T he rm a l Shut dow n The MAX891L/MAX892L smart, low-voltage, P-channel, MOSFET power switches are intended for high-side load-switching applications. These switches operate

ICX445al

Abstract: icx445 ICX44
Contextual Info: Diagonal 6.0mm Type 1/3 Progressive Scan CCD Image Sensor for B/W Cameras ICX445ALA Description The ICX445ALA is a diagonal 6.0mm (Type 1/3) interline CCD solid-state image sensor with a square pixel array and 1.25M effective pixels. Progressive scan enables all pixel signals to be output separately and sequentially within 1/22.5 second.

Contextual Info: Diagonal 6.0mm Type 1/3 Progressive Scan CCD Image Sensor for B/W Cameras ICX445ALA Description The ICX445ALA is a diagonal 6.0mm (Type 1/3) interline CCD solid-state image sensor with a square pixel array and 1.25M effective pixels. Progressive scan enables all pixel signals to be output separately and sequentially within 1/22.5 second.

Transistor B C 458

Contextual Info: MO T OR OL A SC XSTRS/R F 15E D j b3fc,7SSM GüaS2flS 1 | T - 3 3 - 0 7 MOTOROLA T-33-17 S E M IC O N D U C T O R TECHNICAL DATA NPN M JD340 H ig h V o l t a g e P o w e r T r a n s is t o r s PNP M JD350 D P A K For Surface M o u n t A pp licatio n s Designed fo r line operated audio ou tput am plifier, switchm ode power supply

transistor LD50

Abstract: LD50 sot23 BSR56 ld50 Transistor MARKING tAN SOT-23 transistor SOT LD50 BSR36 ld50 BSR57 BSR66
Contextual Info: O J 965 6 72 54 MOTOROLA SC X S T T - iÇ'-'ïS MAXIMUM RATINGS Sym bol Value Unit Draln*Source Voltage ï V Ds 40 V Drain*Gate Voltage Rating vdg 40 V Gate*Source Voltage Vq s 40 V Forward Gat» Currant •Gif! 50 mA Symbol Max Unit PD 225 mW 1.8 m W fC

Contextual Info: Diagonal 6.0mm Type 1/3 Progressive Scan CCD Image Sensor for Color Cameras ICX445AQA Description The ICX445AQA is a diagonal 6.0mm (Type 1/3) interline CCD solid-state image sensor with a square pixel array and 1.25M effective pixels. Progressive scan enables all pixel signals to be output separately within 1/22.5 second.

TCA 200 y

Abstract: Window Discriminator "7 Segment Displays" TCA205 TCA965K 7 Segment Displays TCA671G
Contextual Info: Window discriminators Type TCA 965 K V Hi V ^10 V jxA Package outlines Pin configu­ Type ration, figure 15 3,0 6,0 10 9 Characteristics 7^mb = 25°C, Vs - 1 0 V Operating range V ^amb °c b mA Mo V h nA 4 , 7 5 . . 27 - 2 5 . 85 50 ±10 20 MICROPACK

c847a

Abstract: 1902 transistor CP-8-1 BTD965A3
Contextual Info: CYStech Electronics Corp. Spec. No. : C847A3 Issued Date : 2003.04.01 Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD965A3 Features • Low VCE sat , Low VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A • Excellent DC current gain characteristics

Contextual Info: DTD113EK/DTD113ES/DTD113EF DTD113EL/DTD113EA/DTD113EV h ~7 > V 7, $ / I ransistors DTD113EK/DTD113ES/DTD113EF DTD113EL/DTD113EA/DTD113EV 7 > y X $ h "7 > v X $ >JV'A'qn- b y > y X $ ^ < 7 -^/Transistor Switch Digital Transistors Includes Resistors) • 4#*