VN0610L Search Results

VN2222LL

Contextual Info: TELEDYNE C O M P O N EN T S 3bE flH7faD2 OOÜ7fllfl M • TSC D ^ r-3S'25 WTELEDYNE COMPONENTS VN0610LL VN2222LL N-CHANNEL ENHANCEMENT-MODE DMOS POWER FETs FEATU RES A B S O L U T E M A X IM U M R A T IN G S ■ ■ ■ Drain-Source Voltage. +60V

2222l

Contextual Info: Tem ic SM« * VN0610L, VNIOKE/KM, VN2222L N-Channel Enhancement-Mode MOS Transistors Zener Gate Protected Product Summary P a rt N um ber V BR DSS M in (V) VN0610L r DS(on) M ax (Q) 0.8 to 2.5 0.27 5 @ V GS = 10 V 0.8 to 2.5 0.17 5 @ V GS = 10 V 0.8 to 2.5

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N -C h an n el — Enhancem ent VN0610LL 3 DRAIN 1 SOURCE MAXIMUM RATINGS Symbol Value Vd s s 60 Vdc Drain-Gate Voltage Rg S = 1 Mil vdgr 60 Vdc Gate-Source Voltage - Continuous - Non-repetltive (tp < 50 fis)

10kls

Abstract: 0610L VN10KLS 2222L VN0610L VN2222L
Contextual Info: VN0610L, VN10KLS, VN2222L Vishay Siliconix N-Channel 60-V D-S MOSFETs with Zener Gate PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 2.5 0.27 5 @ VGS = 10 V 0.8 to 2.5 0.31 7.5 @ VGS = 10 V 0.6 to 2.5

VN0610L

Abstract: TL032
Contextual Info: N-Channel Enhancement-Mode MOS Transistors, Zener Gate Protected CQIOOIC CORPORATION VN0610L / VN10KE/ VN10KM/ VN10KT ORDERING INFORMATION FEATURES • Available in Surface Mount SOT-23 • Zener protected • Low rDS on <5fl • 60V Bv APPLICATIONS Temperature Range

10kls

Abstract: 2222l 0610L VN10KLS VN2222L marking CODE VN VN0610L
Contextual Info: VN0610L, VN10KLS, VN2222L Vishay Siliconix N-Channel 60-V D-S MOSFETs with Zener Gate PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 2.5 0.27 5 @ VGS = 10 V 0.8 to 2.5 0.31 7.5 @ VGS = 10 V 0.6 to 2.5

date code IEC 62

Abstract: bc107a pin out BC237 bf256c
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN0610LL 3 DRAIN 2 GATE  1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 Vdc Drain – Gate Voltage RGS = 1 MΩ VDGR 60 Vdc Gate – Source Voltage

MOSFET vn2222l

Abstract: VN10KLS
Contextual Info: VN0610L, VN10KE/KLS, VN2222L Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27 VN10KE 5 @ VGS = 10 V 0.8 to 2.5 0.17 5 @ VGS = 10 V

Contextual Info: VN0610L Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)15 I(D) Max. (A)270m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)800m Minimum Operating Temp (øC)

VN10lm

Contextual Info: VN061 OLL, VN 10LM N-Channel Enhancement-Mode MOS Transistors .B Ü fiSSS TO-92 TO-226AA BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V (BR)DSS (V) r DS(ON) (H ) (A) PACKAGE VN0610LL 60 5 0.28 TO-92 VN10LM 60 5 0.32 TO-237 Performance Curves: VNDS06 •d 1 SOURCE

TO206AC

Contextual Info: VNDP06 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-52 TO-206AC • VN10KE Single TO-92 (TO-226AA) • VN0610L, VN2222L Single TO-237 • VN10KM Single Chip • Available as VNDP1CHP .Bissate DEVICE TYPÍCAL CHARACTERISTICS Ohmic Region Characteristics

VN10KM

Contextual Info: ÜBSSb VNDP1 DIE N-Channel Enhancement-Mode MOS Transistor VNDP1CHP* VN0610L VN10KE VN10KM VN2222L ‘ Meets or exceeds specification for all part numbers listed below Gate Pad 0.0088 0 . 224 0.0063 ( 0.161 Source Pad For additional design information please consult the

10kls

Abstract: 2222L VN2222L VN10KLS 0610L VN0610L vishay siliconix code marking to-92
Contextual Info: VN0610L, VN10KLS, VN2222L Vishay Siliconix N-Channel 60-V D-S MOSFETs with Zener Gate PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 2.5 0.27 5 @ VGS = 10 V 0.8 to 2.5 0.31 7.5 @ VGS = 10 V 0.6 to 2.5

TO-237

Abstract: vn0605t transistor VN10 VN10 application VN0605T 70212 VN2222LM 2222 400-125 VN10LE
Contextual Info: VN10/0605/0610/2222 Series N-Channel Enhancement-Mode MOS Transistors VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38 VN10LM 5 @ VGS = 10 V

VN10LE

Contextual Info: VN10LE/LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38 VN10LLS 5 @ VGS = 10 V 0.8 to 2.5

Contextual Info: VN0610LL, VN10LM N-Channel Enhancement-Mode MOS Transistors • mb g GQIOOIC m CORPORATION ^ VN0610LL /VN10LM FEATURES ORDERING INFORMATION • L o w rog on <SQ Part APPLICATIONS VN061OLL Plastic TO-92 VN 10LM Plastic TO-237 For sorted chips in carriers see 2N7000

VN10KM MOSFET

Abstract: siliconix VN10KM VN10KM VN10KM equivalent MOSFET vn2222l VN10K VN10KE VN0610L VN10KT VN2222L
Contextual Info: VN0610L, VN10KE/M/T, VN2222L N-Channel Enhancement-Mode MOSFET Transistors Zener Gate Protected Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27 VN10KE 5 @ VGS = 10 V 0.8 to 2.5 0.17 VN10KM

222LL

Abstract: VN10LLS 10LLS VN0605T VN0610LL VN2222LL
Contextual Info: VN10LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LLS 5 @ VGS = 10 V 0.8 to 2.5 0.32 VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.18 5 @ VGS = 10 V

MOSFET vn2222l

Abstract: vn2222l VN0610L MA801 VN10KLS
Contextual Info: VN0610L, VN10KLS, VN2222L Vishay Siliconix N-Channel Enhancement-Mode MOSFET —Zener Gate PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 2.5 0.27 5 @ VGS = 10 V 0.8 to 2.5 0.31 7.5 @ VGS = 10 V 0.6 to 2.5

VN10KM equivalent

Abstract: siliconix VN10KM VN10K equivalent VN10KM siliconix VN10K VN10KE vn10k VN0610L to206
Contextual Info: Siliconix incorporated B O c O « */ ^ VN10KM, V IN I u r v i v i VN0610L S O o-ZbŸ VN10KE MOSPOWER N-Channel Enhancem ent M ode Transistors Zener Diode Protected Gate •TO-92 TO -237 FRO NT V IEW PRODUCT SUM M ARY T 0 -2 0 6 A C BO TTO M VIEW a PART N U M BER

VN0605T

Abstract: VN0610LL VN10LE VN10LM VN2222LL VN2222LM
Contextual Info: VN10/0605/0610/2222 Series Siliconix NĆChannel EnhancementĆMode MOS Transistors VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38 VN10LM

mosfet vn10

Abstract: vn10 VN2222LM mosfet vn10lm
Contextual Info: VN10/0605/0610/2222 Series N-Channel Enhancement-Mode MOSFET Transistors VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38 VN10LM 5 @ VGS = 10 V

Contextual Info: MOTOROLA Order this document by VN0610LL/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N-Channel — Enhancement VN0610LL 3 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit VDSS 60 Vdc Drain-Gate Voltage Rg s = 1 Vd g r 60 Vdc Gate-Source Voltage - Continuous

Contextual Info: JEFSSSÄS VNDS1 DIE N-Channel Enhancement-Mode MOS Transistor VNDS1CHP* 2N7000 2N7002 BS170 VN10LM VN0605T VN0610LL VN2222LL VN2222LM VQ1000J/P VNDS06 x 4 (0. 104) 0.0049 (0. 124) Source Pad 0.0041 (0. 104) 0.0049 (0. 124) •Meets or exceeds specification for all part