TRANSISTOR D132 Search Results

NEC JAPAN 2415

Abstract: NEC 2415 2415-Z 2SK2415
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2415,2415-Z SWITCHING N-CHANNEL POWER MOS FET Description The 2SK2415 is N-Channel MOS Field Effect Transistor de- PACKAGE DRAWINGS Unit : mm signed for high voltage switching applications. 1.5 −0.1 Features +0.2

2SK2415

Abstract: 2SK2415-Z IEI-1213 MEI-1202 MF-1134
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2415, 2SK2415-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2415 is N-Channel MOS Field Effect Transistor designed + 0.2 1.5 – 0.1 in millimeters for high voltage switching applications.

2SK3105

Abstract: marking xa
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3105 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.4 +0.1 –0.05 • Can be driven by a 4 V power source • Low on-state resistance

2SJ557

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ557 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.4 +0.1 –0.05 • Can be driven by a 4 V power source • Low on-state resistance

Contextual Info: DATA SH EE T MOS FIELD EFFECT TRANSISTOR _¿ ¿ P A 1 8 5 4 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The ,uPA1854 is a switching device which can be driven directly by a 2.5-V power source.

PA1813

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1813 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1813 is a switching device which can be driven directly by a 2.5-V power source. The µPA1813 features a low on-state resistance and

PA1813

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1813 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1813 is a switching device which can be driven directly by a 2.5-V power source. The µPA1813 features a low on-state resistance and

PA1854

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1854 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1854 is a switching device which can be driven directly by a 2.5-V power source. The µPA1854 features a low on-state resistance and

PA1854

Abstract: a4660
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1854 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1854 is a switching device which can be driven directly by a 2.5-V power source. The µPA1854 features a low on-state resistance and

Contextual Info: DATA S H EE T MOS FIELD EFFECT TRANSISTOR _¿ ¿ P A 1 8 1 3 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The JUPA1813 is a switching device which can be driven directly by a 2.5-V power source.

Contextual Info: DATA SH EE T MOS FIELD EFFECT TRANSISTOR 2SK3105 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The 2SK3105 is a switching device which can be driven directly by a 4 V power source. The 2SK3105 features a low on-state resistance and excellent

2SJ557

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ557 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION FEATURES 3 1.5 • Can be driven by a 4 V power source • Low on-state resistance RDS(on)1 = 155 mΩ MAX. (VGS = –10 V, ID = –1.0 A)

2SK3105

Abstract: marking xa
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3105 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION FEATURES 3 1.5 • Can be driven by a 4 V power source • Low on-state resistance RDS(on)1 = 95 mΩ MAX. (VGS = 10 V, ID = 1.5 A)

Contextual Info: BSO 304SN Infineon technologies Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features • Single N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current 30 V flbsion

Contextual Info: BSO 302SN Infineon t«chnolog¡«i Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features • Single N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance ^S on • Avalanche rated Continuous drain current

Contextual Info: BSO 305N I nf ineon technologies Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features 30 V • Dual N Channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current

PW610

Abstract: TEA1034 2SK 246 transistor alps ALP Q8060 pw410 2SK 2462 transistor nec Semiconductors Selection Guide X-2462 LF 20v0
Contextual Info: SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SJ324 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. in millimeters FEATURES 1 l Low On-state Resistance RDS ~~ = 0.18 Q TYP. (VGS = -10 V,

Microwave Oven Inverter Control IC

Contextual Info: PaiKföonic Others AN6718N Microwave Oven Inverter Control 1C • Overview The AN6718N is an IC for resonance type inverter con­ trol of microwave oven. It can directly control the IGBT Insulated Gate Bipolar Transistor and incorporates the various protective functions.

A1022

Abstract: D601A c2480 C4561 S-Mini D1938 transistor A1022 D602A XN06506
Contextual Info: Transistors Selection Guide by Applications and Functions •5-Pin S-Mini Type (D8)*5-Pin Mini Type (D15)*6-Pin S-Mini Type (D9)*6-Pin Mini Type (D16) Package Transistor, FET # Transistors (XN: 5- and 6-Pin Mini Type Package, XP: 5- and 6-Pin S-Mini Type Package)

NEC 2415

Abstract: NEC JAPAN 2415 2SK2415
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2415,2415-Z SWITCHING N-CHANNEL POWER MOS FET Description PACKAGE DRAWINGS Unit: mm TO-251 (MP-3) 1.5 −0.1 5.0 ±0.2 RDS(on)2 = 0.15 Ω MAX. (VGS = 4 V, ID = 4.0 A) 2 5.5 ±0.2 1 RDS(on)1 = 0.10 Ω MAX. (VGS = 10 V, ID = 4.0 A)

D1915

Abstract: D1915 Transistors TRANSISTOR D1915 c3904 D1915 transistor B709A A1022 xp5555 XN4501 XP1201
Contextual Info: Transistors Selection Guide by Applications and Functions •5 Pin S Mini Type (D6) *5 Pin Mini Type (D11) *6 Pin S Mini Type (D7) *6 Pin Mini Type (D12) Package Transistor, FET A Preliminary # Resistor Built-in Transistors (XN: 5 and 6 Pin Mini Type Package, XP: 5 and 6 Pin S Mini Type Package)

D1915

Abstract: D1915 Transistors d1915f TRANSISTOR D1915 D1915 transistor XN1111 mini type (D7)
Contextual Info: Transistors Selection Guide by Applications and Functions • 5 Pin S Mini Type (D6) *5 Pin Mini Type (D11) *6 Pin S Mini Type (D7) *6 Pin Mini Type (D12) Package Transistor, FET A Preliminary # Resistor Built-in Transistors (XN: 5 and 6 Pin Mini Type Package, XP: 5 and 6 Pin S Mini Type Package)

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX

smd code book transistor

Abstract: TRANSISTOR SMD MARKING CODE c015 TRANSISTOR SMD MARKING CODE 5c smd transistor c015 P-T0252-3-1 D 92 M - 02 DIODE SMD TRANSISTOR MARKING 5c all transistor book SMD TRANSISTOR MARKING fq smd code book KO
Contextual Info: BSP 92 Infineon t « c h n o l o g i •* SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0 .8 .-2 .0 V Pin 1 Type ^bs b BSP 92 -240 V -0.2 A Type BSP 92 Ordering Code Q62702-S653 Pin 2 °D S (on) Package