XN1C301 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0C301 (XN1C301) Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm M Di ain sc te on na tin nc ue e/ d 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95)

Contextual Info: Composite Transistors XN0C301 XN1C301 Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ● 2 2.8+0.2 –0.3 5 5˚ Two elements incorporated into one package. (Tr1 base is connected to Tr2 emitter.)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0C301 (XN1C301) Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 4 5 1.50+0.25 –0.05 2

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A XN0C301 XN1C301
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0C301 (XN1C301) Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm For general amplification M Di ain sc te on na tin nc ue e/ d 2.90+0.20

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A XN0C301 XN1C301
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0C301 (XN1C301) Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 4 5 1.50+0.25 –0.05 2

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A XN0C301 XN1C301
Contextual Info: Composite Transistors XN0C301 XN1C301 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 4 5 1.50+0.25 –0.05 2 1 Parameter Tr2 Overall 1.1+0.2 –0.1 Symbol Rating Unit Collector-base voltage

2SB709A

Abstract: 2SD601A XN1C301
Contextual Info: Composite Transistors XN1C301 Silicon PNP epitaxial planer transistor Tr1 Silicon NPN epitaxial planer transistor (Tr2) Unit: mm For general amplification +0.2 2.8 -0.3 +0.25 0.65±0.15 • Absolute Maximum Ratings (Ta=25˚C) 1 : Collector (Tr1) 2 : Collector (Tr2)

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

5pin marking VJ

Abstract: marking AE 5pin AX05 N2211 9p marking 2SD601 Z 211H
Contextual Info: ^ S 5 S S í / ^ y*T — V Mini Type (5-pin) Package FET Transistors, FETs U n it : mm »•»fri i s-8:8t 0.6510.15 5 - M ( 5 îS i) /N " ^ - v ■>'■Ÿ < "J * T - X 7 ( i , S£#<D$ - m m v t m -E E } v n -S 3 - 4 b 7 > > * 2 4' a (7>a^-ib ft Jfc L t i l