TRANSISTOR D195 Search Results

90n03

Abstract: NP90N03VUG NP90N03VUG-E1-AY DIODE MARKING code UG 45
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP90N03VUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP90N03VUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP90N03VUG-E1-AY NP90N03VUG-E2-AY

90n04

Abstract: NP90N04VUG 90n04 UG NP90N04V DIODE MARKING code UG 45
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP90N04VUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP90N04VUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP90N04VUG-E1-AY NP90N04VUG-E2-AY

90N055

Abstract: NP90N055 NP90N055VUG NP90N055VUG-E1-AY NP90N055VUG-E2-AY MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR DIODE MARKING code UG 45
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP90N055VUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP90N055VUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP90N055VUG-E1-AY NP90N055VUG-E2-AY

60n03

Abstract: 60N03 m 60N03 UG 60N03 to NP60N03S NP60N03SUG D19547EJ1V0DS
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP60N03SUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP60N03SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP60N03SUG-E1-AY NP60N03SUG-E2-AY

K4201

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4201 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4201 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 13 mΩ MAX. (VGS = 10 V, ID = 40 A)

2SK4201

Abstract: 2SK4201-S19 2SK42
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4201 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4201 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 13 mΩ MAX. (VGS = 10 V, ID = 40 A)

Contextual Info: S T U/D1955NL S amHop Microelectronics C orp. Dec 31,2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.

Contextual Info: S T U/D1955NL S amHop Microelectronics C orp. Arp,12 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable.

D1955NL

Abstract: D1955
Contextual Info: S T U/D1955NL S amHop Microelectronics C orp. Arp,12 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.

Contextual Info: S T U/D1955NL S amHop Microelectronics C orp. Arp,12 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.

Contextual Info: S T U/D1955NL S amHop Microelectronics C orp. Oct 07,2004 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 55@ V G S = 10V

2SK4213

Abstract: 2SK421 2SK4213-ZK 2SK42 2sk4213-zk-e1-ay
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4213 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4213 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

2SK4212

Abstract: 2SK4212-ZK-E1-AY 2SK421 2SK4212-ZK
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4212 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4212 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

TC518512

Abstract: transistor D195
Contextual Info: TOSHIBA TC518512PL/FL/FTL/rRL-70LV/80LV/10LV SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 w ords by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low pow er

transistor D195

Abstract: 3-pin D195 transistor 2n3906 equivalent transistor S1201 S1202 S3019 d195 transistor
Contextual Info: Revision 1.0 - November 22, 2000 APPLICATION NOTE S3019 with 1 x 9 Lucent Fiber Optics and S1202 NILE/S1201 CONGO Introduction The AMCC S3019 SONET/SDH transceiver and clock recovery chip is a fully integrated serialization/deserialization SONET STS-12/STM-4 622.08 Mbps and STS-3/STM-1 (155.52 Mbps) interface device. This device is

D128 transistor

Abstract: transistor D128 PT16580-LQ transistor D113 D114 TRANSISTOR transistor D195 TRANSISTOR D114 PT16580 transistor D132 transistor d155
Contextual Info: PT16580 General Purpose LCD Driver IC DESCRIPTION PT16580 is an LCD Driver IC which can drive up to 200 segments. It can be used for frequency display in microprocessor-controlled radio receiver and in other display applications. PT16580 supports both 1/3 duty,

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

wiring diagram audio amplifier ic 6283

Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
Contextual Info: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

90n03

Abstract: NP90N03VUG
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NP90N055

Abstract: NP90N055VUG NP90N055VUG-E1-AY
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SK4201

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SK4201

Abstract: 2SK4201-S19
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid