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    TRANSISTOR D817 Search Results

    TRANSISTOR D817 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D817 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IN5817 schottky diode symbol

    Abstract: 1N5817 595D IN5817 MA737 TC120 TC120303EHA TC120333EHA TC120503EHA equivalent components for transistor 2N2222
    Text: TC120 PWM/PFM Step-Down Combination Regulator/Controller Package Type Features • Internal Switching Transistor Supports 600mA Output Current • External Switching Transistor Control for Output Currents of 2A+ • 300kHz Oscillator Frequency Supports Small


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    PDF TC120 600mA 300kHz TC120503EHA TC120 system420 D-81739 DS21365B-page IN5817 schottky diode symbol 1N5817 595D IN5817 MA737 TC120303EHA TC120333EHA TC120503EHA equivalent components for transistor 2N2222

    SS TRANSISTOR

    Abstract: No abstract text available
    Text: TC120 PWM/PFM Step-Down Combination Regulator/Controller Package Type Features 8-Pin SOP • Internal Switching Transistor Supports 600mA Output Current • External Switching Transistor Control for Output Currents of 2A+ • 300kHz Oscillator Frequency Supports Small


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    PDF TC120 600mA 300kHz TC120503EHA TC120303EHA D-81739 DS21365B-page SS TRANSISTOR

    MCP604 pt100 amplifier

    Abstract: pt100 sensor interface WITH ADC "Current to Voltage Converter" pt100 adc microchip mcp602 pt100 jim Williams MCP602 adjustable CMOS Buffer Amplifier amplifier application circuit amplifiers made in korea
    Text: AN682 Using Single Supply Operational Amplifiers in Embedded Systems Author: Bonnie Baker Microchip Technology Inc. INTRODUCTION Beyond the primitive transistor, the operational amplifier is the most basic building block for analog applications. Fundamental functions such as gain, load


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    PDF AN682 DS00682C-page MCP604 pt100 amplifier pt100 sensor interface WITH ADC "Current to Voltage Converter" pt100 adc microchip mcp602 pt100 jim Williams MCP602 adjustable CMOS Buffer Amplifier amplifier application circuit amplifiers made in korea

    MCP604 pt100 amplifier

    Abstract: jim Williams AN-699
    Text: AN682 Using Single Supply Operational Amplifiers in Embedded Systems Author: Bonnie Baker Microchip Technology Inc. INTRODUCTION Beyond the primitive transistor, the operational amplifier is the most basic building block for analog applications. Fundamental functions such as gain, load


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    PDF AN682 MCP604 pt100 amplifier jim Williams AN-699

    MCP604 pt100 amplifier

    Abstract: pt100 pic light follower using microcontroller tutorial operational amplifier rtd temperature instrumentation amplifier circuit Thomas M Frederiksen AN723 pt100 adc microchip 200B AN682
    Text: AN682 Using Single Supply Operational Amplifiers in Embedded Systems Author: Bonnie Baker Microchip Technology Inc. INTRODUCTION Beyond the primitive transistor, the operational amplifier is the most basic building block for analog applications. Fundamental functions such as gain, load


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    PDF AN682 D-81739 MCP604 pt100 amplifier pt100 pic light follower using microcontroller tutorial operational amplifier rtd temperature instrumentation amplifier circuit Thomas M Frederiksen AN723 pt100 adc microchip 200B AN682

    D8172

    Abstract: 20n60cfd 20n60cf D207 F 207 diode
    Text: SPA20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode VDS 600 V RDS on ,max 0.22 W ID1) 20.7 A • Extremely low reverse recovery charge • Ultra low gate charge


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    PDF SPA20N60CFD PG-TO220-3-31 SP000216361 20N60CFD D8172 20n60cfd 20n60cf D207 F 207 diode

    Untitled

    Abstract: No abstract text available
    Text: SPA20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode VDS 600 V RDS on ,max 0.22 9 ID1) 20.7 A • Extremely low reverse recovery charge • Ultra low gate charge


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    PDF SPA20N60CFD PG-TO220-3-31 SP000216361 20N60CFD

    Untitled

    Abstract: No abstract text available
    Text: TC57 Line Regulator Controller Features General Description • Low Dropout Voltage: 100mV @ 650mA with FZT749 PNP Transistor • 2.7V to 8V Supply Range • Low Operating Current: 50µA Operating, 0.2µA Shutdown • Low True Chip Enable • Output Accuracy < ±2%


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    PDF 100mV 650mA FZT749 OT-23A TC57based D-81739 B73412SD* DS21437B-page

    DF 331 TRANSISTOR

    Abstract: d207
    Text: SPA20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.22 " I D1) 20.7 A • Extremely low reverse recovery charge • Ultra low gate charge


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    PDF SPA20N60CFD PG-TO220-3-31 SP000216361 20N60CFD DF 331 TRANSISTOR d207

    PNP marking NY sot-223

    Abstract: 2N4403 FZT749 TC55 TC57 TC572502ECT TC573002ECT TC573302ECT ZTX749 2N4403 diagram
    Text: TC57 Line Regulator Controller Features General Description • Low Dropout Voltage: 100mV @ 650mA with FZT749 PNP Transistor • 2.7V to 8V Supply Range • Low Operating Current: 50µA Operating, 0.2µA Shutdown • Low True Chip Enable • Output Accuracy < ±2%


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    PDF 100mV 650mA FZT749 OT-23A TC57based D-81739 B73412SD* DS21437B-page PNP marking NY sot-223 2N4403 TC55 TC57 TC572502ECT TC573002ECT TC573302ECT ZTX749 2N4403 diagram

    11n60cfd

    Abstract: transistor D55
    Text: SPA11N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.44 " 11 A I D1) • Extremely low reverse recovery charge • Ultra low gate charge


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    PDF SPA11N60CFD PG-TO220-3-31 O-220-3-31 SP000216317 11N60CFD 11n60cfd transistor D55

    11N60C

    Abstract: 11N60CFD
    Text: SPA11N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.44 Ω 11 A I D1) • Extremely low reverse recovery charge • Ultra low gate charge


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    PDF SPA11N60CFD PG-TO220-3-31 O-220-3-31 SP000216317 11N60CFD 11N60C 11N60CFD

    11n60cfd

    Abstract: 11N60 11N60C JESD22 PG-TO220-3-31 SP000216317 SPA11N60CFD D11A D8172
    Text: SPA11N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.44 Ω 11 A I D1) • Extremely low reverse recovery charge • Ultra low gate charge


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    PDF SPA11N60CFD PG-TO220-3-31 O-220-3-31 SP000216317 11N60CFD 11n60cfd 11N60 11N60C JESD22 PG-TO220-3-31 SP000216317 SPA11N60CFD D11A D8172

    20n60cfd

    Abstract: D8172 JESD22 PG-TO220-3-31 SP000216361 SPA20N60CFD transistor D207 D207
    Text: SPA20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.22 Ω I D1) 20.7 A • Extremely low reverse recovery charge • Ultra low gate charge


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    PDF SPA20N60CFD PG-TO220-3-31 SP000216361 20N60CFD 20n60cfd D8172 JESD22 PG-TO220-3-31 SP000216361 SPA20N60CFD transistor D207 D207

    11N60C

    Abstract: D8172
    Text: SPA11N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.44  11 A I D1) • Extremely low reverse recovery charge • Ultra low gate charge


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    PDF SPA11N60CFD PG-TO220-3-31 O-220-3-31 SP000216317 11N60CFD 11N60C D8172

    D8172

    Abstract: 20N60CFD D207 d207 infineon transistor D207 JESD22 PG-TO220-3 SP000216361 SPA20N60CFD PG-TO220-FP
    Text: SPA20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.22 Ω I D1) 20.7 A • Extremely low reverse recovery charge • Ultra low gate charge


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    PDF SPA20N60CFD PG-TO220FP SP000216361 20N60CFD D8172 20N60CFD D207 d207 infineon transistor D207 JESD22 PG-TO220-3 SP000216361 SPA20N60CFD PG-TO220-FP

    11n60cfd

    Abstract: JESD22 PG-TO220-3-31 SP000216317 SPA11N60CFD D8172
    Text: SPA11N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.44 Ω 11 A I D1) • Extremely low reverse recovery charge • Ultra low gate charge


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    PDF SPA11N60CFD PG-TO220-3-31 O-220-3-31 SP000216317 11N60CFD 11n60cfd JESD22 PG-TO220-3-31 SP000216317 SPA11N60CFD D8172

    0A4B

    Abstract: keypad 4x4 7 segment display 4x4 matrix keypad membrane 4x4 matrix keypad and microcontroller 4X4 HEX KEY PAD keypad membrane 4X4 LTC3710G hex keypad 4x4 hex keypad 7 segment display 4x4 keyboard
    Text: AN529 Multiplexing LED Drive and a 4x4 Keypad Sampling Author: drive of the LEDs is possible, because of the high sink and source capabilities of PIC16C5X microcontroller, thus eliminating the use of an external drive transistor, and results in a reduction in both cost and complexity of


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    PDF AN529 PIC16C5X PIC16C5X DS00529E-page 0A4B keypad 4x4 7 segment display 4x4 matrix keypad membrane 4x4 matrix keypad and microcontroller 4X4 HEX KEY PAD keypad membrane 4X4 LTC3710G hex keypad 4x4 hex keypad 7 segment display 4x4 keyboard

    4X4 HEX KEY PAD

    Abstract: keypad membrane 4X4 4x4 hex keypad with microcontroller 4x4 hex keypad hex keypad 4-DIGIT 7-SEGMENT LED DISPLAY AN529 LTC3710G 061c 065B
    Text: AN529 Multiplexing LED Drive and a 4x4 Keypad Sampling Author: drive of the LEDs is possible, because of the high sink and source capabilities of PIC16C5X microcontroller, thus eliminating the use of an external drive transistor, and results in a reduction in both cost and complexity of


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    PDF AN529 PIC16C5X PIC16C5X 4X4 HEX KEY PAD keypad membrane 4X4 4x4 hex keypad with microcontroller 4x4 hex keypad hex keypad 4-DIGIT 7-SEGMENT LED DISPLAY AN529 LTC3710G 061c 065B

    4x4 matrix keypad in pic with c code

    Abstract: 108 046f keypad 4x4 c code for dspic 4X4 HEX KEY PAD keypad membrane 4X4 big 4-digit seven segment led display pic 4x4 matrix keypad dspic LTC3710G 4x4 hex keypad keypad 4x4 c code for pic
    Text: AN529 Multiplexing LED Drive and a 4x4 Keypad Sampling Author: drive of the LEDs is possible, because of the high sink and source capabilities of PIC16C5X microcontroller, thus eliminating the use of an external drive transistor, and results in a reduction in both cost and complexity of


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    PDF AN529 PIC16C5X PIC16C5X D-81739 4x4 matrix keypad in pic with c code 108 046f keypad 4x4 c code for dspic 4X4 HEX KEY PAD keypad membrane 4X4 big 4-digit seven segment led display pic 4x4 matrix keypad dspic LTC3710G 4x4 hex keypad keypad 4x4 c code for pic

    t1p42

    Abstract: t1p42 motorola 2n2907a motorola CMPT2907 f95 samsung motorola transistor 2N2907A TC573002ECT ZTX749 FZT749 TC57
    Text: TC57 Series Linear Regulator Controller FEATURES GENERAL DESCRIPTION • The TC57 is a low dropout regulator controller that operates with an external PNP pass transistor, allowing the user to tailor the LDO characteristics to suit the application at hand. This results in lower dropout operation and often


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    PDF TC57-based FZT749 DS21437A TC57-2 t1p42 t1p42 motorola 2n2907a motorola CMPT2907 f95 samsung motorola transistor 2N2907A TC573002ECT ZTX749 TC57

    300 rpm 12V DC motor

    Abstract: TC643VPA ups 9910 140 Motor DC 12V 200 rpm ic 4570 8pin 12v DC MOTOR SPEED CONtrol ic OF 8PIN brushless dc motor speed control simple circuit brushless fan 200B TC643VOA
    Text: TC643 INTEGRATED FAN / MOTOR DRIVER FEATURES GENERAL DESCRIPTION • The TC643 is a switchmode brushless DC fan/motor speed driver with diagnostic circuits. External components are kept to a minimum by integrating the power transistor on chip. Any logic-level signal can be used to drive the on-chip


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    PDF TC643 TC643 TC643-1 DS21445A 300 rpm 12V DC motor TC643VPA ups 9910 140 Motor DC 12V 200 rpm ic 4570 8pin 12v DC MOTOR SPEED CONtrol ic OF 8PIN brushless dc motor speed control simple circuit brushless fan 200B TC643VOA

    samsung battery charger

    Abstract: ic 4570 8pin 8 pin ic 4570 datasheet 200B FDC638P NDP6020P TC3827
    Text: TC3827 Lithium-Ion Battery Charger FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ ■ ■ The TC3827 is a battery charger controller for a single cell Li-Ion battery. Using an external PMOS transistor, safe and fast charging of a single Li-Ion cell is accomplished.


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    PDF TC3827 TC3827 TC3827-2 DS21558A samsung battery charger ic 4570 8pin 8 pin ic 4570 datasheet 200B FDC638P NDP6020P

    21N10

    Abstract: PG-TO263-3-2 SPB21N10 SPI21N10 SPP21N10
    Text: SPI21N10 SPP21N10,SPB21N10 G SIPMOS Power-Transistor Product Summary Feature  N-Channel, Enhancement mode 175°C operating temperature  Avalanche rated 100 VDS  Pb-free, RoHS compliant PG-TO262-3-1 V R DS on 80 m ID 21 A PG-TO263-3-2 PG-TO220-3-1


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    PDF SPI21N10 SPP21N10 SPB21N10 PG-TO262-3-1 PG-TO263-3-2 PG-TO220-3-1 SPP21N10 SPB21N10 21N10 PG-TO263-3-2 SPI21N10