TRANSISTOR D93 Search Results

TRANSISTOR D93 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR D93 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IC 3130 Abstract: 4110 P525 Q62702-P5250 GEOY6976 Contextual Info: Fotodarlington Transistor im Sidelooker-Gehäuse Photodarlington Transistor in Sidelooker-Package SFH 3130 F Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm • Enge Empfangscharakteristik	Original		PDF
transistor D94 Abstract: transistor D95 KD621K30 ST DARLINGTON TRANSISTOR 10-6327 300 volt 16 ampere transistor Contextual Info: miVEREX KD621K30 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U 3 l D d flIn Q tO H Transistor Module 300 Amperes/1000 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use	OCR Scan	KD621K30 Amperes/1000 transistor D94 transistor D95 KD621K30 ST DARLINGTON TRANSISTOR 10-6327 300 volt 16 ampere transistor	PDF
2SK3585 Abstract: Infrared-Sensor 2SK3578 2SK3584 2sk0301 2SK3583 PUB4701 2SK1104 2SK1860 2SK3585 equivalent Contextual Info: FETs, IPD, IGBTs, GaAs MMICs • Power Transistor Arrays F-MOS FETs Application Part No. Non-contact solenoid drive. Motor drive. Control equipment switching equipment. ✽: Ta=25 °C PUB4753 (PU7457) PUB4701 PUB4702 Absolute Maximum Ratings (TC = 25 °C)	Original	PUB4753 PU7457) PUB4701 PUB4702 450/600o 380/680o SIP10-A1 2SK0301 2SK663) 2SK301) 2SK3585 Infrared-Sensor 2SK3578 2SK3584 2SK3583 PUB4701 2SK1104 2SK1860 2SK3585 equivalent	PDF
M61511FP Abstract: 80P6N 2427D N675 D44 8PIN Contextual Info: MITSUBISHI SOUND PROCESSORS M61511FP AUDIO SIGNAL PROCESSOR 6ch Electric Volume with 10 Input Selector APPLICATION AV Amp, Receiver, Mini Compo etc. FEATURE • 6ch Independent Electric Volume with High Voltage Transistor 97 Step ; 0~-95dB/1dB Step, -∞ , Maximum Input Voltage 4Vrms	Original	M61511FP -95dB/1dB 0/6/12dB) 80P6N M61511FP 80P6N 2427D N675 D44 8PIN	PDF
MHW721A2 Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503 Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA	OCR Scan	1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503	PDF
d933 Abstract: D932 BUK9MNN-65PKK MS-013 SO20 transistor D929 Contextual Info: BUK9MNN-65PKK Dual TrenchPLUS FET Logic Level FET Rev. 03 — 15 July 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring	Original	BUK9MNN-65PKK d933 D932 BUK9MNN-65PKK MS-013 SO20 transistor D929	PDF
Contextual Info: BUK9MNN-65PKK Dual TrenchPLUS FET Logic Level FET Rev. 01 — 27 May 2010 Objective data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring	Original	BUK9MNN-65PKK	PDF
Contextual Info: BUK9MNN-65PKK Dual TrenchPLUS FET Logic Level FET Rev. 03 — 15 July 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring	Original	BUK9MNN-65PKK	PDF
opto fet Abstract: ll90_3 JESD46-B LL85 LL90 transistor FET OS-PCN-2005-003-A Contextual Info: Product / Process Change Notification For internal use only 2005-02-15 OS-PCN-2005-003-A Dear Customer, please find attached our OSRAM OS PCN: “Change of bond pad of field effect transistor FET and leadframe plating for laser SPL LLxx” Important information for your attention:	Original	OS-PCN-2005-003-A JESD46-B" D-93049 opto fet ll90_3 JESD46-B LL85 LL90 transistor FET OS-PCN-2005-003-A	PDF
d5cd Abstract: IPI024N06N3 G Contextual Info: IPB021N06N3 G Ie\Q IPI024N06N3 G IPP024N06N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 R , ? >=1H, & Q @D9=9J54 D53 8>? <? 7I 6? B 3 ? >F5BD5BC I9 .( J & Y" )( 6	Original	IPB021N06N3 IPI024N06N3 IPP024N06N3 d5cd IPI024N06N3 G	PDF
IPB029N06N3G Contextual Info: IPB029N06N3 G Ie\Q IPI032N06N3 G IPP032N06N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 R , ? >=1H , & Q @D9=9J54 D53 8>? <? 7I 6? B 3 ? >F5BD5BC I9 .( J &1 Y" (	Original	IPB029N06N3 IPI032N06N3 IPP032N06N3 IPB029N06N3G	PDF
55B5 Abstract: IPB036N12N marking eb5 Diode 9H diode 1D marking G9 Contextual Info: IPB036N12N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 3 ? >F5BD5BC Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H *( J R 9H"[Z#$YMd +&. Y" I9 )0( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 + 9H"[Z#	Original	IPB036N12N3 65AE5 55B5 IPB036N12N marking eb5 Diode 9H diode 1D marking G9	PDF
marking EB diode Abstract: Q451 ee 19 8b qg Contextual Info: IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q ' 3 81>>5< >? B=1<<5F5< R , ? >=1H, & Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & I9 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# 0( J -&,	Original	IPP057N08N3 IPI057N08N3 IPB054N08N3 marking EB diode Q451 ee 19 8b qg	PDF
IPD320N20N3 Abstract: marking EB5 Contextual Info: IPD320N20N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H ( J R 9H"[Z#$YMd + Y" I9 +, 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D EB5	Original	IPD320N20N3 7865AE5 marking EB5	PDF

IPD600N25N3 G Contextual Info: IPD600N25N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H -( J R 9H"[Z#$YMd .( Y" I9 - 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D EB5	Original	IPD600N25N3 7865AE5 IPD600N25N3 G	PDF
IPB027N10N3 Abstract: marking 1D 55B5 Q451 EB5 MARKING marking G9 Contextual Info: IPB027N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H ( J R 9H"[Z#$YMd &/ Y" I9 )( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D	Original	IPB027N10N3 7865AE5 marking 1D 55B5 Q451 EB5 MARKING marking G9	PDF
4b 5c marking Contextual Info: BSC360N15NS3 G "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H -( J R 9H"[Z#$YMd +. Y" I9 + 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D EB5	Original	BSC360N15NS3 4b 5c marking	PDF
Contextual Info: IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q ' 3 81>>5< >? B=1<<5F5< R , ? >=1H- Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & I9 ( J ,&* Y" )( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z#	Original	IPB042N10N3 IPI045N10N3 IPP045N10N3	PDF
4b 5c marking Abstract: PG-TO-263-7 Contextual Info: IPB030N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 Q @D9=9J54 D53 8>? <? 7I 6? B=? D? B4B9F5 1@@<931D9 ? >C V 9H 0( J R 9H"[Z#$YMd +&( Y" I9 .( 6 Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( &	Original	IPB030N08N3 4b 5c marking PG-TO-263-7	PDF
marking EB5 Abstract: 5CC1 Contextual Info: BSC320N20NS3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H ( J R 9H"[Z#$YMd + Y" I9 +. 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q 2 6B55 <514 @<1D9 >7 + ? " , 3 ? =@<9	Original	BSC320N20NS3 7865AE5 marking EB5 5CC1	PDF
DIODE marking S6 89 Abstract: diode ED 1B DSA0032870 D542 BI55 marking EB diode eb 1b 4240R Contextual Info: IPB023N06N3 G Ie\Q "%&$!"# 3 Power-Transistor Product Summary Features Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 Q @D9=9J54 D53 8>? <? 7I 6? B 3 ? >F5BD5BC V 9H .( J R 9H"[Z#$YMd *&+ Y" I9 ,( 6 Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( &	Original	IPB023N06N3 DIODE marking S6 89 diode ED 1B DSA0032870 D542 BI55 marking EB diode eb 1b 4240R	PDF
B55Q Contextual Info: IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H -( J R , ? >=1H-( )(&0 Y" 0+ I9 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z#	Original	IPB108N15N3 IPP111N15N3 IPI111N15N3 B55Q	PDF
marking 9D Abstract: marking eb5 diode 1D marking g9 55B5 7865a DIODE Z6 Diode 9H DIODE ED 99 package marking 5f Contextual Info: IPA086N10N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H ( J R , ? >=1H 0&. Y" I9 ,- 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D	Original	IPA086N10N3 7865AE5 marking 9D marking eb5 diode 1D marking g9 55B5 7865a DIODE Z6 Diode 9H DIODE ED 99 package marking 5f	PDF
marking EB5 Abstract: diode marking eb5 marking G9 Contextual Info: IPD122N10N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H ( J R , ? >=1H )& Y" -1 I 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D	Original	IPD122N10N3 7865AE5 marking EB5 diode marking eb5 marking G9	PDF

TRANSISTOR D93 Search Results

TRANSISTOR D93 Result Highlights (5)

TRANSISTOR D93 Datasheets Context Search

IC 3130

transistor D94

2SK3585

M61511FP

MHW721A2

d933

opto fet

d5cd

IPB029N06N3G

55B5

marking EB diode

IPD320N20N3

IPD600N25N3 G

IPB027N10N3

4b 5c marking

4b 5c marking

marking EB5

DIODE marking S6 89

B55Q

marking 9D

marking EB5