TRANSISTOR DJ MARKING Search Results

9926C

Abstract: IPI037N06L3 s4si IPP037N06L3 G
Contextual Info: IPB034N06L3 G Jf]R IPI037N06L3 G IPP037N06L3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R  - @? > 2 I - ' R AE:> :K65 E649? @= @8J 7@C    4@? G6CE6CD I9   . K +&, Z" 1(

IPB230N06L3

Abstract: IPP230N06L3 G s4si
Contextual Info: IPB230N06L3 G IPP230N06L3 G Jf]R "%&$!"# 3 Power-Transistor Product Summary Features R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R AE:> :K65 E649? @= @8J 7@C    4@? G6CE6CD V 9I . K R 9I"\[#$ZNe *+ Z" I9 +( 6 R  I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) ' 

marking xd diode

Abstract: e866 marking 8fc marking J6c s4si
Contextual Info: IPB081N06L3 G IPP084N06L3 G Jf]R "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R  - @? >2 I- ' R AE:> :K65 E649? @= @8J 7@C    4@? G6CE6CD   I9 . K 0&) Z" -( 6 R  I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) ' 

AF41

Abstract: diode 6e marking 8FC diode 6d 50 56E MARKING s4si
Contextual Info: IPB049N06L3 G IPP052N06L3 G Jf]R "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R  - @? >2 I- ' R AE:> :K65 E649? @= @8J 7@C    4@? G6CE6CD   I9 . K ,&/ Z" 0( 6 R  I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) ' 

electromatic s system sv 115 230

Abstract: mgdm 6 A ELECTROMATIC mgdm 6 A ELECTROMATIC MGDM 6a electromatic s system st 125 115 electromatic s system sv 110 electromatic RELAY SM 115 220 electromatic denmark electromatic s system electromatic s system sm 105 220
Contextual Info: SENSORS INDUCTIVE - CAPACITIVE - LEVEL - PHOTO - TEMPERATURE ETC. Inductive iösclncrmolk Proximity sensors Capacitive This new catalogue on accessories together with a new Ssystem catalogue replace our eight previous S-system catalo­ gues. This innovation should facilitate your survey of our entire

h7d marking

Contextual Info: IPA50R140CP CoolMOSTM Power Transistor Product Summary Features W฀4EHB:M?:;฀8;IJ฀/ =L"a`#฀?D฀1, W฀ EM;IJ฀<?=KH;฀E<฀C;H?J฀/,+฀N฀.Y V !0฀8M\_Sj .) O R =L"a`#%_Sj )'*-)  -1 `< Q Y%fkb W฀2BJH7฀BEM฀=7J;฀9>7H=; W฀"NJH;C;฀:L :J฀H7J;:

7H diode

Abstract: IPA50R140CP DIODE marking ED X9 diode marking BEM LM7m
Contextual Info: IPA50R140CP CoolMOSTM Power Transistor Product Summary Features W 4 EHB: M ?: ; 8;IJ/ =L"a`# ?D 1,   W EM ;IJ<?=KH; E<C ;H?J/ , + N . Y V !0 8M\_Sj .) O R =L"a`#%_Sj )'*-) " -1 `< Q Y%fkb W 2 BJH7 BEM =7J ; 9>7H=; W " NJH;C ; : L : JH7J;: W % ?=> F;7A 9KHH;DJ97F78?B?JO

transistor marking hy

Abstract: PHV6 KDu TRANSISTOR 7L SOT23 MARKING QV sot23 7L Marking 990L marking hu sot23 STT3PF20V
Contextual Info: STT3PF20V P-CHANNEL 20V - 0.14 W - 2.2A SOT23-6L 2.7-DRIVE STripFET II POWER MOSFET TYPE STT3PF20V • ■ ■ ■ VDSS 9 RDS on W # W # ID 9 9 $ TYPICAL RDS(on) = 0.14 W (@4.5V) TYPICAL RDS(on) = 0.20 W (@2.7V) ULTRA LOW THRESHOLD GATE DRIVE (2.7V) STANDARD OUTLINE FOR EASY

SD42524

Contextual Info: SD42524 1A High Power LED Driver with 6～36V Input DESCRIPTION The SD42524 is a step-down PWM control LED driver with a built-in power MOSFET. It achieves 1A continuous output current in 6~36V input voltage range. It provides thermal shutdown circuit, current limit

2N705

Abstract: I960 ARMv Germanium mesa
Contextual Info: MIL-S-19500/86A 20 March 19o4_ SUPERSEDING MII/-S-19500/86 NAVY 6 June I960 ' MILITARY SPECIFICATION TRANSISTOR, PNP, GERMANIUM TYPE 2N705 This specification has been approved bv the Department of Defense agd is mandatory for use by the Department^ of the Armv. the Navv.

MARKING SMD npn TRANSISTOR DJ

Abstract: smd transistor marking dj marking DJ SMD 2SD2098 SMD Transistor dj DJ SMD DJ* marking 2SD2098
Contextual Info: Transistors SMD Type Low VCE sat Transistor 2SD2098 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Low VCE(sat). +0.1 4.00-0.1 Features Excellent DC current gain characteristics. 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1

Contextual Info: Transistors IC SMD Type Product specification 2SD2098 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Low VCE sat . +0.1 4.00-0.1 Features Excellent DC current gain characteristics. 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1

transistor 6c9

Abstract: transistor marking 6c9 102 6f dk transistor 6H MARKING diode D9 DG transistor marking 6H
Contextual Info: IPI50R350CP CoolMOSTM Power Transistor Product Summary Features U DK: GH;><IF: D;B : F>H/ , + L . X U 2 AHF6 ADK <6H : 8 =6F<: V !0 8M[^Rh .) O R =L"`_#%^Rh )',.) " *2 _< Q X%dia U " LHF : B : 9J 9HF6H: 9 U % ><= E: 6@8 IFF: CH8 6E67>A >HM U - 7 ;F: : A

2SD1627

Abstract: transistor DJ 30 at n430
Contextual Info: Ordering num be-:E N 2 0 1 6 A 2SD1627 NO.2016A I NPN Epitaxial Planar Silicon Transistor SA%YO Driver Applications II Applications . Motor drivers, hammer drivers, relay drivers, voltage regulator control Features . High DC current gain hpg^OOO . Wide ASO

RN2912AFS

Abstract: RN2913AFS
Contextual Info: RN2912AFS, RN2913AFS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN2912AFS, RN2913AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Reducing the parts count enables the manufacture of ever more

2SD1627

Abstract: 60AA
Contextual Info: Ordering number:EN 2016A 2SD1627 N0.2OI6A SANYO NPN Epitaxial Planar Silicon Transistor Driver Applications i Applications . Motor drivers, hammer drivers, relay drivers, voltage regulator control Features . High DC current gain hFE^4000 . Wide ASO . Very small size making it easy to provide high-density,

Contextual Info: RN2912AFS, RN2913AFS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN2912AFS, RN2913AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Reducing the parts count enables the manufacture of ever more

rkm 33 transistor

Abstract: g1k bc848b rkm transistor DTB133HKA DTD133HKA MMST8598 TRANSISTOR MARKING CODE R2A rkm 35 transistor 2SA1885 marking W8 transistor
Contextual Info: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.

MAX3805

Abstract: MAX3805ETE PRBS231 diagram fr 310
Contextual Info: 19-2936; Rev 1; 3/06 KIT ATION EVALU E L B AVAILA 10.7Gbps Adaptive Receive Equalizer The MAX3805 is designed to provide up to 30in 0.75m reach on 6-mil differential FR-4 transmission line, or up to 24ft (8m) on RG-188A/U type coaxial cable, for PRBS data from 9.95Gbps to 10.7Gbps. The

MAX3805

Abstract: MAX3805ETE PRBS231 FR4 dielectric constant vs temperature
Contextual Info: 19-2936; Rev 1; 3/06 10.7Gbps Adaptive Receive Equalizer The MAX3805 is designed to provide up to 30in 0.75m reach on 6-mil differential FR-4 transmission line, or up to 24ft (8m) on RG-188A/U type coaxial cable, for PRBS data from 9.95Gbps to 10.7Gbps. The

Contextual Info: T O SH IB A TPC8303 TENTATIVE TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-M O SII TPC8303 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm SOP-8

Contextual Info: GP1A73A/GP1A73A1 SHARP GP1A73A/GP1A73A1 Compact OPIC Photointerrupter with Connector I Outline Dimensions • Features U n it : m m 1. Com pact type Í5ÍL 2. TTL com patible owing to OPIC output 3. Snap-in m ounting type &Ï 4. 3 kinds o f m ounting plate thickness

fr4106

Abstract: 10ghz variable attenuator
Contextual Info: 19-2936; Rev 1; 3/06 10.7Gbps Adaptive Receive Equalizer The MAX3805 is designed to provide up to 30in 0.75m reach on 6-mil differential FR-4 transmission line, or up to 24ft (8m) on RG-188A/U type coaxial cable, for PRBS data from 9.95Gbps to 10.7Gbps. The

RN2112ACT

Abstract: RN2113ACT
Contextual Info: RN2112ACT,RN2113ACT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2112ACT,RN2113ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm