TRANSISTOR DM 506 Search Results

J5021-0

Abstract: 1200W MOSFET power J50 mosfet
Contextual Info: an A M P co m p a n y RF MOSFET Power Transistor, 120W, 28V 2 - 1 7 5 MHz DU28120T V2.00 Features • • • • • N -Channel E n han cem en t M ode D evice DM OS Structure Low er C ap acitan ces for B roadb an d O p eration High Saturated O u tp u t Pow er

Contextual Info: ff! HIP5060 H A R R IS S E M I C O N D U C T O R August 1998 Power Control IC Single Chip Power Supply T he H IP 5060 is a com p le te pow er con tro l 1C, incorporating both th e high po w e r DM O S transistor, C M O S logic and low level analog circ u itry on th e sam e Intellig ent Power 1C. Both

C28H OMRON Operation Manual

Abstract: c28k OMRON Operation Manual C40H OMRON Operation Manual c60h OMRON Operation Manual OPERATION MANUAL C28H AND C40H design a sequential timer to switch on and off at least 3 relays in a particular sequence using tim Omron Programming Console c40h ladder diagram omron plc barcode reader Omron C40H manual G6B-1174P-FD-US
Contextual Info: Issued March 1997 232-3973 Data Pack D Data Sheet RS Omron CH, ‘mini-H’ range programmable logic controller PLC The Omron CH or ‘mini-H’ range is a highly specified range of compact, ruggedly designed and easy to use PLCs. The main features of the range include an in-built

Contextual Info: ^ 3 9 - 0 9 Philips Components Data sheet Preliminary specification status date of issue March 1991 PHILIPS BUK474-600B PowerMOS transistor SbE INTERNATIONA GENERAL DESCRIPTION PINNING -SOT186A m 711DÔ2b ÜD44L24 TDD • P H I N QUICK REFERENCE DATA SYMBOL

C28H OMRON Operation Manual

Abstract: C40H OMRON Operation Manual C40H OMRON plc c28k OMRON Operation Manual c60h OMRON Operation Manual OPERATION MANUAL C28H AND C40H OMRON plc c60h operation manual Omron Programming Console c40h PLC based temperature control ladder logic diagram c28k programming manual
Contextual Info: Issued March 1993 015-030 Data Pack D Data Sheet RS Omron CH, ‘mini-H’ range programmable logic controller PLC The Omron CH or ‘mini-H’ range is a highly specified range of compact, ruggedly designed and easy to use PLCs. The main features of the range include an in-built

pin diagram of ca3080

Contextual Info: ff! HIP5063 H A R R IS S E M I C O N D U C T O R August 1998 Power Control 1C Single Chip Power Supply File Num ber 3209.2 Features • S in gle C hip C u rrent M ode C ontrol IC T he H IP 5063 is a com p le te pow er con tro l 1C, incorporating • 60V, 10A O n-chip D M O S Transistor

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK452-100A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,

BUK475

Abstract: BUK475-100A BUK475-100B
Contextual Info: Product specification Philips Semiconductors PowerMOS transistor Isolated version of BUK455-100A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended foruse in Switched Mode Power Supplies SMPS ,

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor isolated version of BUK452-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

CA3026

Abstract: CA3005 CA3006 CA3005 or CA3006 ca3054d CA3054E ca3026t a3026c ca3054
Contextual Info: D ifferential Am plifiers CA3026, CA3054 Transistor Array - Dual Independent Differential Amplifiers For Low Pow er A pplications at Frequencies from D C to 120 M H z Features • Two differential amplifiers on a common substrate ■ Independently accessible inputs and outputs

Contextual Info: Philips Semiconductors Data sheet status P ro d u c t s p e c ific a tio n date of issue A p ril 1 9 9 5 BSP220 P-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES PARAMETER SYMBOL • Direct interface to C-MOS, TTL, etc. “Vds

DO061A

Abstract: DMO063 DO061B
Contextual Info: Series DO, DMO 1-3.0 Amp • 60 Vdc • DC Output MINI-SIP • Compact for High Density PCB M ount • DC Control, DC Output SPST-NO DC output relays in epoxycoated packages utilize the popular .10" grid lead spacing. They are available with either bipolar transistor output DO , or the DMO063 with MOSFET

DO061A

Abstract: DMO063 DO061B
Contextual Info: Series DO, DMO 1-3.0Amp • 60 Vdc - DC OUTPUT MINI-SIP • Compact for High Density PCB M ount • DC Control, DC Output SPST-NO DC output relays in epoxycoated packages utilize the popular .10" grid lead spacing. They are available with either bipolar transistor output DO , or the DMO063 with MOSFET

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

Contextual Info: N AMER PHI LIP S/ DIS CR ETE j DhE D • PowerMOS transistor bbEBTBl 0014615 5 ■ BUZ155 T- 3V' 13 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: Philips Semiconductors Objective specification PowerMQS transistor Isolated version of PHP4N40E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable

Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP6N60E GENERAL DESCRIPTION QUICK REFERENCE DATA SYMBOL N-channe! enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable

Contextual Info: Philips Semiconductors Objective Specification PowerMOS transistor Isolated version of PHP1N60E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable

Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP3N50E GENERAL DESCRIPTION PHX2N60E QUICK REFERENCE DATA SYMBOL N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high

Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Automotive applications, Switched

Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP4N40E GENERAL DESCRIPTION PHX2N40E QUICK REFERENCE DATA N-channel enhancement mode SYMBOL field-effect power transistor in a full pack, plastic envelope featuring high

Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP3N50E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable

Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP8N50E GENERAL DESCRIPTION PHX5N50E QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable

Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PH X6N 60E FEATURES • • • • • SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance