TRANSISTOR ET 460 Search Results

GS 069 LF

Abstract: HCA-120 BUK637-500A BUK637-500B BUK637-500C
Contextual Info: N AMER P H I L IPS /D IS CR ET E 55E D • Lb53T31 OQSQbôO S ■ PowerMOS transistor Fast Recovery Diode FET BUK637-500A BUK637-500B BUK637-500C T - 3 ‘M S ' GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a

BCX71GR

Abstract: BCX71JR h22e H21E BCX71KR
Contextual Info: PLESSEY SEMICOND/DISCRETE : OB D eT | 7250533 OOObbMb T f PIMP silicon planar small signal transistor BCX71 ABSOLUTE MAXIMUM RATINGS Parameter Collector-Emitter Voltage Collector-Emitter Voltage Symbol Emitter-Base Voltage BCX71 V CES V V CEO -45 V V ebo -5

bcy580

Abstract: BCY590 transistor h21e SCHEMA BCY59 BCY 59
Contextual Info: *BCY 58 BCY59 NPN SILICON TRANSISTOR TRANSÌSTOR NPN S ILIC IU M Compì, of BCY 78 and BCY 79 Preferred device Dispositif recommandé • For switching and amplifier - Pour com m utation et am plification V CEO 32 V 45 V BCY 58 •c 200 mA BCY 59 Maximum power dissipation

NE32584C-T1

Abstract: nec 3435 transistor am 4428
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.

transistor et 454

Abstract: SK 50 et 12 transistor et 460 sk7650 SK129-25 leistungstransistoren ON SEMICONDUCTEUR A102A STS SOT SK454
Contextual Info: A Strangkühlkörper für Leiterplattenmontage Extruded heatsinks for PCB mounting Dissipateurs extrudés pour montage PCB 34,9 16 12,7 1,5 3,2 6,5 18,3 P 25,4 E Ø 2,3 max. …STC 6,5 1,5 6 max. 3 4,5 max. 10,8 25,4 Ø7 M3 Ø6 Ø 2,3 max. …STIC …STCB

Heatsinks sk 489

Abstract: sk514 sot823 transistor et 460 SK104a THF 104 THF 185 boitier to 126 SOT TO-126 mounting AT20N
Contextual Info: A Retaining springs for transistors Lochbild 4 6,3 11,7 14 Perforations 10 THF 129 TO 220 4 für Kühlkörper für Blechstärke pour épaisseur de tôle 1 – 2 mm FS SK 129 A 105/106 1 – 2 mm FS SK 104 A 97/98 1 – 2 mm FS TO 3 P SK 409 A 99/100 TO 247

TRANSISTOR sd 346

Abstract: Lautsprecher RFT L 2911 Lautsprecher LP C 4804 transistor TRANSISTOR b 882 p rft lautsprecher transistor GC 228 Transistor B 886 service-mitteilungen RFT KR 650
Contextual Info: SERVICE-MITTEILUNGEN VEB RFT INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN radio - television I Ausgabe 1988 Seite 8 1-4 Mitteilung aus dem VEB Fernsehgerätewerk Staßfurt Sicherheitskontrollen für 4oooer Parbfernsengeräte Nachfolgend geben wir Hinweise, welche speziellen Kontrollen

FX2N 64mr manual

Abstract: FX2N-48MT FX2N-128MR mitsubishi plc FX2n-32mt SERIES FX2N-64MT fx2n-48mr FX2N-1PG MANUAL Mitsubishi MELSEC FX2N-80MR FX2N-80MT Mitsubishi MELSEC FX2N-80MR-DS
Contextual Info: HARDWARE MANUAL FX2N SERIES PROGRAMMABLE CONTROLLERS FX2N Series Programmable Controllers ENG Foreword • • • FRE Préface • • • GER • • Dieses Handbuch enthält Texte, Abbildungen und Erläuterungen zur korrekten Installation und Bedienung der FX2N-SPS und sollte vor einer Installation oder einem Einsatz des Gerätes gelesen werden. Die Inhalte müssen verstanden sein.

F3S-A482

Abstract: omron f3sa F3S-A321 F3S-A322 emetteur 93420 F3S-A242 F3S-A082 F3S-A162 BB97
Contextual Info: BARRIERE IMMATERIELLE F3S-A II Le plus haut niveau de sécurité pour la détection des doigts et mains des opérateurs en zones dangereuses Conforme aux directives européennes. Convient aux machines les plus dangereuses catégorie de sécurité type 4, conforme EN 61496-1,-2 prEN 50100-1,-2 ,

photo transistor array

Abstract: ET7272 Optolab ET7272 ET8001
Contextual Info: ET 8001 6-Channel precision amplifier with automatic hysteresis tracking function for encoders Features • Designed for optical encoders and light barriers • Automatic Hysteresis monitoring and tracking function generates precise digital outputs • Phase stable outputs over a wide

Contextual Info: BCX70J NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS T„=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

golf cart motor circuits

Abstract: 2SC3866 transistor 2SD921 2sc3866 equivalent 2SC3866 sewing motor ET382 2SC3030 2SC3505 2SC3549
Contextual Info: M O LD TYPE BIPOLAR TRANSISTORS Ratings and Specifications Q High v o lta g e high speed sw itch in g transistors • T h e transistor is best suited fo r use w ith 240V AC inp u t sw itching regulators. • Can o p e rate w ith in th e 30kHz range ty p e

2SC4538 equivalent

Abstract: 2sc3866 equivalent 2SC3030 2SC3505 2SC3549 2SC3866 2SC4419 2SC4538 2SD2431 2SD1049
Contextual Info: M O LD TYPE BIPOLAR TRANSISTORS Ratings and Specifications Q High v o lta g e high speed sw itch in g transistors • T h e transistor is best suited fo r use w ith 240V AC inp u t sw itching regulators. • Can o p e rate w ith in th e 30kHz range ty p e

but16

Contextual Info: MOTOROLA SC ÎXSTRS/R F> 6367254 MOTOROLA SC Tt XSTRS/R DF|b3b72SM 96D F> 80785 □□fl07flS D l~-3 3 -«3e? MOTOROLA BUT16 SEM ICO N D U CTO R TECHNICAL DATA 12 AMPERES SW ITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS NPN SILICON POWER DARLINGTON TRANSISTORS

Contextual Info: 3 M A E «? H M - 6 5 6 4 2 /8 8 3 8K x 8 Asynchronous CMOS Static RAM August 1996 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65642/883 is a CMOS 8192 x 8-bit Static Random

LC marking code transistor

Abstract: transistor marking code BCW61A BCW61 BCW61B BCW61C BCW61D TRANSISTOR BCW61 marking code ER transistor
Contextual Info: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollecto r C urrent C ollecto r D issipation

TP6N60

Abstract: 6N60
Contextual Info: *57 SGS-THOMSON iL iO M K I M T P 6 N 60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE M TP6N60 V dss R DS on Id 600 V < 1.2 a 6.8 A . TYPICAL RDs(on) = 1 f i • AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C

transistor mark BA

Contextual Info: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Symbol

1736d

Contextual Info: 6DI75M-050 75A 'U ± '< h - y < 7 _ Y = 7 > '> ^ ^ ì>d. - ì V l £ f ' :£ ï > d , - ) v O utline Draw ings POWER TRANSISTOR MODULE F e a tu r e s • f f ih FE H igh DC C u rre n t Gain • H ig h S peed S w itc h in g : A p p lic a tio n s • ? G eneral P urpose Inverter

QM300HA-2H

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM300HA-2H HIGH POWER SWITCHING USE INSULATED TYPE QM300HA-2H lc V cex Collector current. Collector-emitter voltage. DC current gain . hre Insulated Type UL Recognized 30QA j 1000V 75 Yellow Card No. E80276 <N

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

bd7995

Abstract: P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361
Contextual Info: H F To X 8366IT U N E B Issue 2/8534 STR910A B26000 2000 General Wiring Diagram Figure 10.1 +28 V sense) GROUND Meter Batt. sense + Sense Isolated Ground Batt. GND O FF 28 V O FF (T X O F F ) Relays K4, K1 & K2 BATT. MODE »DC» Relays K5, K6 +8 V in GROUND

brochage des circuits integres

Abstract: hacheur photocoupleur relais schema Commande moteur Relais CPV240 radiateurs pour thyristors de puissance CX240D5 D1D20 crydom hd4850
Contextual Info: L’EXPERT MONDIAL EN MATIÈRE DE COMMUTATION STATIQUE Relais statiques montés sur circuit imprimé Relais statiques montés sur panneau Relais statiques montés sur rail DIN Modules auxiliaires Modules d'Entrées/Sorties statiques Relais statiques t Modules auxiliaires t Modules E/S

DIODE ED

Abstract: HFA15T860 HFA15TB60 DIODE ITT 310 an967 ULTRA-FAST RECOVERY RECTIFIER DIODES NEGATIVE calculation of IGBT snubber Calculation of major IGBT operating parameters AN-967 AN-983
Contextual Info: International S 3 Rectifier yIPPLICMION NOTES ' p u b l is h e d b y 'I n t e r n a t i o n a l r e c t i f i e r , 233 kan sa s st r e e t , el seg u n d o , ca 90245. 3 10 13 2 2 - 3 3 3 1 A N -9 8 9 The HEXFRED Ultrafast Diode in Power Switching Circuits