TRANSISTOR F 370 Search Results

bi 370 transistor

Abstract: JNI Corporation AA1A4p bi 370 transistor e PA33 nec j
Contextual Info: SEC k Compound Transistor A l Î T / \ f Z AA1A4P f&tfc F*9ÜcN P N i 1J 3 > F 5 >•$>;*? Resistors Built-in Type NPN Silicon Epitaxial Transistor Medium Speed Switching ftWm/P A C K A G E ^/FEATUR ES DIMENSIONS Unit : mm o '<47 è I*3/Sï L t V ' ì t o

62003F

Abstract: 62004f 62004A TD62801P 62004AP A 107 transistor TD62XXX 62c852
Contextual Info: [ 2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays [2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays B i p o l a r |Tra n s i st o r| TD62 xxx rray| 40Series, 226Devices P TTL O UTPUT Sustaining Voltage (V ç e (su s ) P/PA /F/FB/FN A P/APA /A F/AFN : B P/B P- I/B F

BFX60

Abstract: Transistor BFX 90 bfx 63 Q60206-X60
Contextual Info: N PISI-Transistor für H F-Verstärkerstufen BFX 60 BFX 60 ist ein epitaktischer NPN-Silizium-Planar-HF-Transistor im Gehäuse 18 A 4 DIN 41 876 T O -7 2 , jedoch mit abweichender Anschlußfolge. Die Anschlüsse sind vom Ge­ häuse elektrisch isoliert.

Transistor BFX 59

Abstract: BFX59F BFX59 kbr 1000 Q60206-X transistor BFX59 transistor w 04 59 Transistor BFX 4
Contextual Info: BFX 59 F NPN Transistor for driver and output stages in antenna amplifiers BFX 59 F is an epitaxial N P N silicon planar RF transistor in a case 18 A 4 D IN 41 876 TO-72 . The leads are electrically insulated from the case. B FX 59 F is suitable for use in low-power driver and output stages up to the U H F range, especially at a higher

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3629 NPN EPITA XIA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC3629 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers in U H F band 7.2 volts operation applications. C 1 .5 M A X Dimensions in mm

2SA1798

Abstract: K 4005 transistor
Contextual Info: I O rdering num ber: EN3709 z I SAMYO i 2SA1798 No.3709 f PN P Epitaxial P lan ar Silicon Transistor 20V/8A Switching Applications I F e a tu re s • Adoption of MBIT processes. • Low saturation voltage. • F ast switching speed. • Large current capacity.

2SA1151

Abstract: 2SC2718 I084 2sa115 05B2 JE 33 PA33 2SA11 transistor AE RF
Contextual Info: Silicon Transistor 2 S A 1151 ' PNPx f □V \= 7 's i> 7 .9 fe m m iis m m PNP Silicon Epitaxial Transistor Low Frequency Amplifier Industrial Use PACKAGE DIMENSIONS f t * / FEATURES O ¡¡SI r^i ^ \ Unit : mm) V ceo . 50 V ^ ^ |V| | |J ^• o 2SC2718 1=> yyui)/ > ?>

2N3948

Contextual Info: MO T O R O L A SC XSTRS/R F 4bE D • b3b72St4 00^403^ *1 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N3948 The R F Line 1.0 W - 400 MHz HIGH FREQUENCY TRANSISTOR N PN S IL IC O N NPN SILICON HIGH-FREQUENCY TRANSISTOR . . . designed for amplifier applications i n industrial and com*

S9011* transistor

Abstract: S9011 BVCBO-50V
Contextual Info: FORWARD INTERNATIONAL ELECTRONICS LID. S9011S SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM CONVERTER, AM/FM IF AMPLIFIER GENERAL PURPOSE TRANSISTOR Package: SOT-23 ABSOLUTE MAXIMUM RATINGS at Tan*F=25#C Characteristic Symbol Rating Unit

VHF power TRANSISTOR PNP TO-39

Abstract: LN 7904 i31n mm4018
Contextual Info: I MOTOROLA SC XSTRS/R MbE D F h3b?2S4 G Q tm 2 3 t i MOTOROLA r SEMICONDUCTOR TECHNICAL DATA - 3 ^ HOTb n MM4018 T h e R F L in e \q 9 = - 4 0 0 mA RF POWER TRANSISTOR PNP SILICON PNP SILICON RF POWER TRANSISTOR . . designed for amplifier, frequency multiplier or oscillator appli­

2SA1612

Contextual Info: NEC j > y = l > Y = ÿ > i > 7 . 9 Silicon Transistor 2 S A 1 6 1 2 PNP Silicon Epitaxial Transistor Audio Frequency High Gain Amplifier mm; 7" 1J V KICffl £ L T f t S T f „ o M 'h m f t -m v h O, 2 . 1 ± 0. 1 1 .2 5 ± 0 . 1 O h FE : 500 T Y P . I c = — 1 . 0

SC2334

Abstract: fls09 1444 G 92-0151 2SA1010
Contextual Info: NEC j \ f x > i / < 7 - Silicon Power Transistor A 2 P N P I t°i'+S'T./UJKS«' U 3 > h v S A 1 1 ^ S i i S J a iS W B E x - f ' y f v iS t ffl PNP Silicon Epitaxial Transistor High Speed High Voltage Switching Industrial Use 2 S A 1010 i i g J t i S i t B E X ^

AF280

Abstract: germanium-pnp-mesa-hf-transistor oszillator Germanium mesa AF 280 042PF
Contextual Info: Nicht für Neuentwicklungen Not for new developments AF 280 Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Misch- und O szillatorstufen bis 900 MHz Applications: M ixer and oscilla to r stages up to 900 MHz Besondere Merkmale:

62706f

Abstract: TD62705P TD62706P 62706P
Contextual Info: SILICON MONOLITHIC TD62705P/F TD62706P/F BIPO LAR DIGITAL INTEGRATED CIRCUIT 6CH HIGH-VOLTAGE SOURCE DRIVER The TD62705P, TD62705F and TD62706P, TD62706F are comprised of six source current transistor array. These drivers are specifically designed for fluorescent

BCW88

Abstract: C370 Q62702
Contextual Info: BCW88 PNP Silicon planar AF transistor The epitaxial silicon planar A F transistor in its hermetically sealed glass/ceramic flat package is especially suited for use in military and space applications. The advantage of this particular package lies in its high packing density.

MPT100

Contextual Info: NEC j m * T / v rx Junction Field Effect Transistor A 2SK692 e c -r v k ° — m N-Channel Silicon Junction Field Effect Transistor ECM Impedance Converter n $ m m o g mi * o r - h i w s * mm V '. 4.0 ± 0.2 • v - x m z f j x - Y z «H&T-è E C M -f > &

transistor d 1557

Abstract: transistor 1558 transistor IC 1557 b germanium transistor ac 128 ML 1557 b transistor 1557 b transistor af280 Q62701-F88 900 mhz germanium diode AF 280 S
Contextual Info: 25C » • fi235bOS GG04QÔ1 S « S I E G PNP Germanium UHF Transistor - SIEMENS À F 280 S AKTIENGESELLSCHAF “7 ^ fo r m ix e r and o s c illa to r c ir c u its up to 9 0 0 M H z 3 - / - 0 7 A F 2 8 0 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package sim ilar to T 0 119. This transistor is particularly

9011 transistor

Abstract: 9011 NPN transistor 9011 G
Contextual Info: ST 9011 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

9011 transistor

Abstract: 9011 npn 9011 NPN transistor f 9011 h transistor transistor 9011 h 9011 9011 g f f 9011
Contextual Info: ST 9011 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

NTE488

Contextual Info: NTE488 Silicon NPN Transistor RF Power Output Description: The NTE488 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power Amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 10.7dB @ VCC = 13.5V, PO = 3.5W, f = 175MHz

9011 transistor

Abstract: 9011 ic CD4081 pin diagram datasheet 9011 G 9011 npn transistor 9011 h
Contextual Info: ST 9011 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

9011 transistor

Abstract: 9011 NPN transistor 9011 npn f 9011 h transistor 9011 f 9011 f transistor
Contextual Info: ST 9011 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2N5160

Abstract: 2N5160 MOTOROLA MRF5160 MRF*5160 MRF5160HX 2N3866 MRF5160HXV J0240 RIA 39 transistor MRF516
Contextual Info: I MOTOROLA SC XSTRS/R F 4 bE b 3 b 7254 D 00=14075 7 MOTOROLA m o T b " P 3 3 - I 7 - • SEMICONDUCTOR TECHNICAL DATA 2N5160 T h e R F Line If = -4 0 0 m A POWER TRANSISTOR PNP SILICON RF POWER TRANSISTOR P N P S ILIC O N . . . designed fo r am plifier, frequency m ultiplier or oscillator applica­

LT1001A

Abstract: transistor 335
Contextual Info: LT1001A NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 B C 45° ØA ØD DESCRIPTION: E The ASILT1001A is a High Frequency Transistor Designed for High Gain Low Noise CATV, and MATV Amplifier Applications. F H G MAXIMUM RATINGS 200 mA IC DIM PDISS