TRANSISTOR F151 Search Results

F1510

Contextual Info: polyfet rf devices F1510 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Contextual Info: polyfet rf devices F1516 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Contextual Info: polyfet rf devices F1510 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F1516

Contextual Info: polyfet rf devices F1516 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

transistor Bf 966

Contextual Info: SIEMENS BF 771W NPN Silicon RF Transistor • For modulators and amplifiers in TV and VCR tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Type Pin Configuration 1= B Q62702-F1519 2=E II CO RBs o BF 771W

Contextual Info: SIEMENS BF 771W NPN Silicon RF Transistor • For modulators and amplifiers in TV and VCR tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Pin Configuration Type 1= B Q62702-F1519 Ö II CO RBs LU II CM

Q62702-F1519

Contextual Info: BF 771W NPN Silicon RF Transistor • For modulators and amplifiers in TV and VCR tuners ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BF 771W SOT-323 RBs Q62702-F1519 1=B 2=E

Transistor BFR 135

Abstract: Transistor BFR Transistor BFR 35 transistor K 1412
Contextual Info: SIEMENS BFR 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • f f = 8GHz F = 1.3dB at 900MHz 1=B 11 m Q62702-F1510 o li RCs CO BFR 193W 10 ESP: Electrostatic discharge sensitive device, observe handling precaution!

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

MRF151G

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

TRANSISTOR BC 553

Abstract: T151 T810
Contextual Info: 1DI3OMA-O5O 30a POWER TRANSISTOR MODULE Features • h F E ^ 'S l ' High DC Current Gain • Kfl'Sijv,' • Insulated Type High speed switching • f f liÊ • A pplications Pow er Switching • M otor Brake in Inverter • Maximum Ratings and Characteristics

1DI300M-120

Abstract: T151 T810 b336
Contextual Info: DI300M-120 /< 7_ =l - \ s y : Outline Drawings 10 13 21 r r T POWER TRANSISTOR MODULE * Features • High Arm Short Circuit Capability • hFE^Biv,' • 7 l) — High DC Current Gain U > ? ? ' % ' — K rtJR • IfeiiiJK Including Freew h eelin g Diode

MRF151G

Abstract: L8776 Nippon capacitors rf amplifier circuit mrf151g
Contextual Info: MOTOROLA O rder this docum ent by M RF151G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field -E ffect Transistor MRF151G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

2DI5OZ-12O

Abstract: B381 IB07
Contextual Info: 2DI5OZ-12O 50A l— ; u POWER TRANSISTOR MODULE : Features > K 9 ftE H ig h V o lt a g e * 7 >; — U — KF*3/K Including Free W heeling Diode * A S O * s'/ a ^ v Excellent Safe Operating Area Insulated Type I Applications • Jz'K 'tJX 'f "jJ- 's y High Power Switching

JCS7

Contextual Info: 1 D I 2 4 A - l- 5 240A ) 5 u : Outline Drawings POWER TRANSISTOR MODULE • ¡K H t: : F e a tu re s • ÜSHŒ H ig h V oltage • 7 U — sfc-f 'J :+ — K r t H • ASO In c lu d in g Free W h e e lin g 'D io d e E xcellent Safe O p e ra tin g Area

Contextual Info: 6 D I 1 0 A - 0 5 CKIOA s < r7 — Y = 7 > i > 7 > 9 :Z i > i . — ) V POWDER TRANSISTOR MODULE ! Features • 7 'J - * > f U ' s ' ) ' ? * * - K r t f l* • h F E *''fiiv .' • ife f& Jfi In c lu d in g F ree W h e e lin g D io c H ig h D C C u rre n t G ain

transistor f151

Contextual Info: 6DI15A-05005A / < T7 — ' Ì k ± s \ r7 — ;E ' > i L — J l' : Outline Drawings =l — ) V POWER TRANSISTOR MODULE 17 7.6 T 7 7I 7I7 JA B 3.E A 3.E |3& [3.Ç • iN N i: : F e a tu re s • y U — i ï ' f 'J + — K rtJ E In c lu d in g Free W h e e lin g D iode

6DI100A-050

Abstract: 30S3 M603 T151 T930
Contextual Info: 6DI100A-050 iooa ! Outline Drawings POWER TRANSISTOR MODULE F e a tu re s • 7 l) —fc-f >J • h F E ^ iÜ l' • Kl*9/8c In c lu d in g Free W h e e lin g D iode H igh DC C urrent Gain Insulated Type • f f l i i : A p p lic a tio n s • AC i — AC M o to r C ontrols

transistor f151

Abstract: B/SMD transistor f151
Contextual Info: 1DI50K-055«oa : O utline D ra w in g s POWER TRANSISTOR MODULE : F e a tu r e s • ¡ü W /± H ig h V o lta g e • 71J— In c lu d in g Free W h e e lin g D iode K rt/B E • A S O ^ Æ l' • SISSÏÏ5 E xcellent Safe O p e ra tin g Area T * Iyp i ttiW n .li

Transistor b103

Abstract: TRANSISTOR TZ b102 transistor 2DI100M-050 T151 b101 diode
Contextual Info: 2DI100M-050 iooa I Outline D raw ings /< 7 POWER TRANSISTOR MODULE ; Features j ifthFE H igh DC C u rre n t Gain H igh Speed S w itc h in g : A p p lic a tio n s £ General P urpose In ve rte r U n in te rru p tib le Pow er S u p p ly N Clftflfttt Servo & S p in d le D rive fo r NC M a c h in e T ools

matsua stepping motors

Abstract: transistor c32
Contextual Info: Programmable Controllers SIGMA Ultra-compact high performance PLC High speed, High capacity, and New functions - V3 launched for new performance stage Actual size: W30 x H90 × D60 mm W1.181 × H3.543 × D2.362 (inch) These materials are printed on ECF pulp.

Panasonic PLC FP communication

Abstract: SIGMA RELAY
Contextual Info: FPS Sigma Series Programmable Controllers 09/2008 FPS (Sigma) The next generation compact PLC Highlights State-of-the-art PLC technology in the most compact size plus the ability to communicate via all important modern media characterize the FPS (Sigma). With its two 100kHz pulse outputs, four high speed counters that function at up to 50kHz for

MSC1002

Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition