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    TRANSISTOR FOR 10GHZ OSCILLATOR Search Results

    TRANSISTOR FOR 10GHZ OSCILLATOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR FOR 10GHZ OSCILLATOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BFP410 Low Noise Silicon Bipolar RF Transistor • Low current device suitable e.g. for handhelds 3 • For high frequency oscillators e.g. DRO for LNB 2 4 • For ISM band applications like 1 Automatic Meter Reading, Sensors etc. • Transit frequency fT = 25 GHz


    Original     		PDF BFP410 AEC-Q101 OT343

    RF TRANSISTOR 10GHZ

    Abstract: BFP405 10GHz oscillator RF TRANSISTOR 10GHZ low noise TRANSISTOR NPN 5GHz BGA420 BFP405 ALs 2n2222+spice+model
    Text: BFP405 NPN Silicon RF Transistor • For low current applications 3 • For oscillators up to 12 GHz 2 4 • Noise figure F = 1.25 dB at 1.8 GHz 1 outstanding Gms = 23 dB at 1.8 GHz • SIEGET  25 GHz fT - Line • Pb-free RoHS compliant package • Qualified according AEC Q101


    Original     		PDF BFP405 OT343 RF TRANSISTOR 10GHZ BFP405 10GHz oscillator RF TRANSISTOR 10GHZ low noise TRANSISTOR NPN 5GHz BGA420 BFP405 ALs 2n2222+spice+model

    bfp410

    Abstract: DRO lnb BGA420 transistor frequency 1.5GHz gain 20 dB
    Text: BFP410 NPN Silicon RF Transistor • Low current device suitable e.g. for handhelds 3 • For high frequency oscillators e.g. DRO for LNB 2 4 • For ISM band applications like 1 Automatic Meter Reading, Sensors etc. • Transit frequency f T = 25 GHz • Pb-free RoHS compliant package


    Original     		PDF BFP410 OT343 bfp410 DRO lnb BGA420 transistor frequency 1.5GHz gain 20 dB

    10GHz oscillator

    Abstract: 4 pin dual-emitter RF TRANSISTOR 10GHZ BFU510 RF TRANSISTOR 2.5 GHZ s parameter RCS9 "MARKING CODE A5*" 6 pins IC cbe LC marking code transistor RF NPN POWER TRANSISTOR 2.5 GHZ
    Text: DISCRETE SEMICONDUCTORS M3D124 BFU510 NPN SiGe wideband transistor Preliminary specification 2001 Nov 08 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU510 PINNING FEATURES • Very high power gain PIN • Very low noise figure


    Original     		PDF M3D124 BFU510 SCA73 125104/00/04/pp12 10GHz oscillator 4 pin dual-emitter RF TRANSISTOR 10GHZ BFU510 RF TRANSISTOR 2.5 GHZ s parameter RCS9 "MARKING CODE A5*" 6 pins IC cbe LC marking code transistor RF NPN POWER TRANSISTOR 2.5 GHZ

    Untitled

    Abstract: No abstract text available
    Text: BFP405 NPN Silicon RF Transistor • For low current applications 3 • For oscillators up to 12 GHz 2 4 • Noise figure F = 1.25 dB at 1.8 GHz 1 outstanding Gms = 23 dB at 1.8 GHz • SIEGET  25 GHz fT - Line • Pb-free RoHS compliant package • Qualified according AEC Q101


    Original     		PDF BFP405 OT343

    Untitled

    Abstract: No abstract text available
    Text: BFP410 NPN Silicon RF Transistor • Low current device suitable e.g. for handhelds 3 • For high frequency oscillators e.g. DRO for LNB 2 4 • For ISM band applications like 1 Automatic Meter Reading, Sensors etc. • Transit frequency f T = 25 GHz • Pb-free RoHS compliant package


    Original     		PDF BFP410 OT343

    Untitled

    Abstract: No abstract text available
    Text: BFP405 Low Noise Silicon Bipolar RF Transistor • For low current applications 3 • For oscillators up to 12 GHz 2 4 • Minimum noise figure NFmin = 1.25 dB at 1.8 GHz 1 Outstanding Gms = 23 dB at 1.8 GHz • Pb-free RoHS compliant and halogen-free package


    Original     		PDF BFP405 AEC-Q101 OT343

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS M3D124 BFU510 NPN SiGe wideband transistor Preliminary specification 2001 July 24 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU510 PINNING FEATURES • Very high power gain PIN • Very low noise figure


    Original     		PDF M3D124 BFU510 BFU510 MSB842 125104/00/04/pp11

    4 pin dual-emitter

    Abstract: BFU540 10GHz oscillator MARKING A4 transistor o-50 RF NPN POWER TRANSISTOR 2.5 GHZ RF TRANSISTOR 10GHZ low noise transistor D 587
    Text: DISCRETE SEMICONDUCTORS M3D124 BFU540 NPN SiGe wideband transistor Preliminary specification 2002 Jan 28 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU540 PINNING FEATURES • Very high power gain PIN • Very low noise figure


    Original     		PDF M3D124 BFU540 SCA73 125104/00/04/pp12 4 pin dual-emitter BFU540 10GHz oscillator MARKING A4 transistor o-50 RF NPN POWER TRANSISTOR 2.5 GHZ RF TRANSISTOR 10GHZ low noise transistor D 587

    4 pin dual-emitter

    Abstract: BFU510 RF TRANSISTOR 10GHZ RF TRANSISTOR 10GHZ low noise TRANSISTOR FOR 10GHz oscillator RF NPN power transistor 2.5GHz "MARKING CODE A4" 10GHz oscillator RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN
    Text: DISCRETE SEMICONDUCTORS M3D124 BFU540 NPN SiGe wideband transistor Preliminary specification 2001 Nov 27 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU540 PINNING FEATURES • Very high power gain PIN • Very low noise figure


    Original     		PDF M3D124 BFU540 SCA73 125104/00/04/pp12 4 pin dual-emitter BFU510 RF TRANSISTOR 10GHZ RF TRANSISTOR 10GHZ low noise TRANSISTOR FOR 10GHz oscillator RF NPN power transistor 2.5GHz "MARKING CODE A4" 10GHz oscillator RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN

    V 7271 U

    Abstract: 421506 4948 transistor bf IC 7555 datasheet 7555 harris Dual Long-Tailed Pair Transistor Array NE 7555 T 3108 001 TOP 100-124 500E
    Text: HFA3102 S E M I C O N D U C T O R Dual Long-Tailed Pair Transistor Array August 1994 Features Description • High Gain-Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on


    Original     		PDF HFA3102 10GHz HFA3102 10GHz) V 7271 U 421506 4948 transistor bf IC 7555 datasheet 7555 harris Dual Long-Tailed Pair Transistor Array NE 7555 T 3108 001 TOP 100-124 500E

    Dual Long-Tailed Pair Transistor Array

    Abstract: 86929
    Text: HFA3102 Data Sheet [ /Title HFA3 102 /Subject (Dual LongTailed Pair Transistor Array) /Autho r () /Keywords (Intersil Corporation, dual, differential amplifier, long tailed pair, 10V, 30ma, uhf ghz ft, low noise, low offset voltage, August 1996 File Number


    Original     		PDF HFA3102 HFA3102 10GHz) 10GHz Dual Long-Tailed Pair Transistor Array 86929

    pspice

    Abstract: NE 7555 500E 800E HFA3102 HFA3102B HFA3102B96 NF50 UPA102G UHF-1
    Text: HFA3102 Data Sheet August 1996 File Number 3635.2 Dual Long-Tailed Pair Transistor Array Features The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array


    Original     		PDF HFA3102 HFA3102 10GHz) 10GHz pspice NE 7555 500E 800E HFA3102B HFA3102B96 NF50 UPA102G UHF-1

    4948 transistor bf

    Abstract: 7555 harris NE 7555 p 8123 transistor V 7271 U 500E 800E HFA3102 HFA3102B HFA3102B96
    Text: HFA3102 S E M I C O N D U C T O R Dual Long-Tailed Pair Transistor Array August 1996 Features Description • High Gain-Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on


    Original     		PDF HFA3102 10GHz HFA3102 10GHz) 4948 transistor bf 7555 harris NE 7555 p 8123 transistor V 7271 U 500E 800E HFA3102B HFA3102B96

    diode BB102

    Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet
    Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,


    Original     		PDF ADE-A08-003G diode BB102 RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet

    3SK238

    Abstract: g1 smd transistor small signal audio FET BB303 smd transistor g1 SMD Transistor 070 R hitachi all fet audio application hitachi DISCRETE DUAL fet dual transistor 6 pin SMD 327 Hitachi 2SJ
    Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,


    Original     		PDF ADE-A08-003E 3SK238 g1 smd transistor small signal audio FET BB303 smd transistor g1 SMD Transistor 070 R hitachi all fet audio application hitachi DISCRETE DUAL fet dual transistor 6 pin SMD 327 Hitachi 2SJ

    HITACHI SMD TRANSISTORS

    Abstract: small signal audio FET hitachi small signal Tv tuner Diagram LG RF nf transistor array g1 smd TRANSISTOR BB304 3SK238 BB405 equivalent smd 015
    Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi ′s or any third party ′s patent, copyright,


    Original     		PDF ADE-A08-003E HITACHI SMD TRANSISTORS small signal audio FET hitachi small signal Tv tuner Diagram LG RF nf transistor array g1 smd TRANSISTOR BB304 3SK238 BB405 equivalent smd 015

    IC 7555 datasheet

    Abstract: NE 7555 200E 400E 500E HFA3102 HFA3102B96 NF50 UPA102G
    Text: HFA3102 Data Sheet May 2003 FN3635.4 Dual Long-Tailed Pair Transistor Array Features The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array


    Original     		PDF HFA3102 FN3635 HFA3102 10GHz) 10GHz IC 7555 datasheet NE 7555 200E 400E 500E HFA3102B96 NF50 UPA102G

    HFA3102BZ96

    Abstract: NE 7555 HFA3102 HFA3102B96 HFA3102BZ NF50 UPA102G
    Text: HFA3102 Data Sheet July 14, 2005 FN3635.5 Dual Long-Tailed Pair Transistor Array Features The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array


    Original     		PDF HFA3102 FN3635 HFA3102 10GHz) 10GHz HFA3102BZ96 NE 7555 HFA3102B96 HFA3102BZ NF50 UPA102G

    Untitled

    Abstract: No abstract text available
    Text: HFA3102 Data Sheet July 14, 2005 FN3635.5 Dual Long-Tailed Pair Transistor Array Features The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array


    Original     		PDF HFA3102 FN3635 HFA3102 10GHz) 10GHz

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS M3D124 BFU540 NPN SiGe wideband transistor Preliminary specification 2001 July 24 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU540 PINNING FEATURES • Very high power gain PIN • Very low noise figure


    Original     		PDF M3D124 BFU540 BFU540 MSB842 125104/00/04/pp11

    2SC4873

    Abstract: IC 2703 TRANSISTOR 10GHZ TRANSISTOR FOR 10GHz oscillator IS21E
    Text: 2 S C 4 8 7 3 N PN Epitaxial Planar Silicon Transistor U H F ~ S Band low-noise amplifiers and oscillators T E N T A T I VE Features and Applications • Small noise figure: NF=1.4dB typ f=lGHz • High Power Gain : IS21e|* = 15dB typ (f=lGHz) • High cutoff frequency : fI = 10GHz typ


    OCR Scan     		PDF 2SC4873 IS21e| 10GHz 2SC4873 IC 2703 TRANSISTOR 10GHZ TRANSISTOR FOR 10GHz oscillator IS21E

    13786

    Abstract: No abstract text available
    Text: What H E W L E T T * mLlíM P A C K A R D Surface Mount Gallium Arsenide FET for Oscillators Technical Data ATF-13786 Features D escription • Low Cost Surface Mount Plastic Package • High f , ^ : 60 GHz Typical • Low Phase N oise at 10 GHz: -110 dBc/Hz @ 100kHz Typical


    OCR Scan     		PDF ATF-13786 100kHz ATF-13 ATF-13786-TR1 ATF-13786-STR 13786

    Untitled

    Abstract: No abstract text available
    Text: C fì H A R R HFA3102 I S S E M I C O N D U C T O R Dual Long-Tailed Pair Transistor Array August 1994 Features Description High Gain-Bandwidth Product fT . . . . 10GHz • High Power Gain-Bandwidth Product . . . 5GHz • High Current Gain (hFE) .


    OCR Scan     		PDF HFA3102 10GHz UPA102G HFA3102 10GHz) 5M-1982. 430Z271