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    TRANSISTOR FULL 2000 TO 2012 Search Results

    TRANSISTOR FULL 2000 TO 2012 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR FULL 2000 TO 2012 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor j241

    Abstract: transistor j239 J241 transistor
    Text: BLF8G22LS-200V; BLF8G22LS-200GV Power LDMOS transistor Rev. 2 — 10 December 2012 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2110 MHz to 2170 MHz.


    Original     		PDF BLF8G22LS-200V; BLF8G22LS-200GV BLF8G22LS-200V 8G22LS-200GV transistor j241 transistor j239 J241 transistor

    BLF8G10LS-270V

    Abstract: transistor full 2000 to 2012
    Text: BLF8G10LS-270V; BLF8G10LS-270GV Power LDMOS transistor Rev. 1 — 3 December 2012 Product data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 790 MHz to 960 MHz.


    Original     		PDF BLF8G10LS-270V; BLF8G10LS-270GV BLF8G10LS-270V 8G10LS-270GV transistor full 2000 to 2012

    Untitled

    Abstract: No abstract text available
    Text: BLF8G10LS-270 Power LDMOS transistor Rev. 1 — 17 August 2012 Product data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor for base station applications at frequencies from 820 MHz to 960 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested


    Original     		PDF BLF8G10LS-270

    Untitled

    Abstract: No abstract text available
    Text: BLF8G10LS-270 Power LDMOS transistor Rev. 1 — 17 August 2012 Product data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor for base station applications at frequencies from 820 MHz to 960 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested


    Original     		PDF BLF8G10LS-270 stability10

    Untitled

    Abstract: No abstract text available
    Text: BLF8G22LS-240 Power LDMOS transistor Rev. 1 — 11 December 2012 Objective data sheet 1. Product profile 1.1 General description 240 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance


    Original     		PDF BLF8G22LS-240

    Untitled

    Abstract: No abstract text available
    Text: BLF8G22LS-140 Power LDMOS transistor Rev. 1 — 25 September 2012 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


    Original     		PDF BLF8G22LS-140

    Untitled

    Abstract: No abstract text available
    Text: BLF8G22LS-200V; BLF8G22LS-200GV Power LDMOS transistor Rev. 1 — 13 June 2012 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance


    Original     		PDF BLF8G22LS-200V; BLF8G22LS-200GV BLF8G22LS-200V 8G22LS-200GV

    base station product

    Abstract: No abstract text available
    Text: BLF8G22LS-200V; BLF8G22LS-200GV Power LDMOS transistor Rev. 1 — 13 June 2012 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance


    Original     		PDF BLF8G22LS-200V; BLF8G22LS-200GV BLF8G22LS-200V 8G22LS-200GV base station product

    flanged pin

    Abstract: No abstract text available
    Text: BLF7G22L-100P; BLF7G22LS-100P Power LDMOS transistor Rev. 3 — 2 January 2012 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


    Original     		PDF BLF7G22L-100P; BLF7G22LS-100P BLF7G22L-100P flanged pin

    Untitled

    Abstract: No abstract text available
    Text: BLF7G22L-100P; BLF7G22LS-100P Power LDMOS transistor Rev. 3 — 2 January 2012 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


    Original     		PDF BLF7G22L-100P; BLF7G22LS-100P BLF7G22L-100P

    J122 SMD TRANSISTOR

    Abstract: No abstract text available
    Text: BLF6G22LS-40BN Power LDMOS transistor Rev. 1 — 28 June 2012 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit.


    Original     		PDF BLF6G22LS-40BN J122 SMD TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: BLF6G22LS-40BN Power LDMOS transistor Rev. 1 — 28 June 2012 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit.


    Original     		PDF BLF6G22LS-40BN

    30221

    Abstract: LR12010T0200J
    Text: CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT Rev. 1 — 15 June 2012 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation


    Original     		PDF CLF1G0035-100; CLF1G0035S-100 CLF1G0035-100 CLF1G0035S-100 1G0035S-100 30221 LR12010T0200J

    sot1227

    Abstract: 082279 SOT1227A Model 284J 226J
    Text: CLF1G0060-10; CLF1G0060S-10 Broadband RF power GaN HEMT Rev. 1 — 8 October 2012 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-10 and CLF1G0060S-10 are 10 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.


    Original     		PDF CLF1G0060-10; CLF1G0060S-10 CLF1G0060-10 CLF1G0060S-10 1G0060S-10 sot1227 082279 SOT1227A Model 284J 226J

    Untitled

    Abstract: No abstract text available
    Text: BLF8G22LS-160BV Power LDMOS transistor Rev. 1 — 25 June 2012 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2000 MHz to 2200 MHz.


    Original     		PDF BLF8G22LS-160BV

    RO4350B max current

    Abstract: No abstract text available
    Text: BLF8G20LS-200V Power LDMOS transistor Rev. 1 — 4 July 2012 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.


    Original     		PDF BLF8G20LS-200V RO4350B max current

    Untitled

    Abstract: No abstract text available
    Text: BLF8G20LS-200V Power LDMOS transistor Rev. 1 — 4 July 2012 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.


    Original     		PDF BLF8G20LS-200V

    Bv 42 transistor

    Abstract: No abstract text available
    Text: BLF8G20LS-200V Power LDMOS transistor Rev. 2 — 12 October 2012 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.


    Original     		PDF BLF8G20LS-200V Bv 42 transistor

    bc857b nxp

    Abstract: C5750X7S2A106M Gan transistor C 1972 transistor
    Text: CLF1G0035-50; CLF1G0035S-50 Broadband RF power GaN HEMT Rev. 1 — 15 June 2012 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-50 and CLF1G0035S-50 are broadband general purpose 50 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation is from


    Original     		PDF CLF1G0035-50; CLF1G0035S-50 CLF1G0035-50 CLF1G0035S-50 1G0035S-50 bc857b nxp C5750X7S2A106M Gan transistor C 1972 transistor

    PCE3667CT-ND

    Abstract: capacitor 56J pF a 69154 CLF1G0060-30 SOT1227A 200V470
    Text: CLF1G0060-30; CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 1 — 8 October 2012 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.


    Original     		PDF CLF1G0060-30; CLF1G0060S-30 CLF1G0060-30 CLF1G0060S-30 1G0060S-30 PCE3667CT-ND capacitor 56J pF a 69154 SOT1227A 200V470

    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    TRANSISTOR SMD MARKING CODE 3G

    Abstract: No abstract text available
    Text: SO T2 3 PBSS5230T 30 V, 2 A PNP low VCEsat BISS transistor Rev. 2 — 4 June 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS5230T PBSS4230T. AEC-Q101 TRANSISTOR SMD MARKING CODE 3G

    Untitled

    Abstract: No abstract text available
    Text: SO T 23 PBSS5230T 30 V, 2 A PNP low VCEsat BISS transistor Rev. 2 — 4 June 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS5230T PBSS4230T. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: BLF8G22LS-240 Power LDMOS transistor Rev. 2 — 22 January 2013 Preliminary data sheet 1. Product profile 1.1 General description 240 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance


    Original     		PDF BLF8G22LS-240