TRANSISTOR H15 Search Results

QCA30B40

Abstract: QCA30B60 QCB30A40 QCB30A60 UUE76102 711-1543
Contextual Info: 7 ^ 1 5 4 3 GO051b? TRANSISTOR MODULE 4flfl QCA30B/QCB30A40/60 U U E 7 6 1 0 2 M and Q C B 30A are dual Darlin­ gton power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode.

Contextual Info: TRANSISTOR MODULE Q C A 150A A 120 U L;E 76102 M QCA1 5 0 A A 1 2 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated

UMH15N

Abstract: DTC144T transistor H15 marking H15 multi emitter transistor 003 SOT363
Contextual Info: UMH15N NPN Multi-Chip Built-in Resistors Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 .055 1.40 .047(1.20) Features * Two DTC144T chips in a package o 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Transistor elements are independent, eliminating interference.

transistor marking T79 ghz

Abstract: TT 2076 transistor MARKING T79 "NPN Transistor" transistor T79 ghz
Contextual Info: dò l o X , , 1 PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-noise, high-gain amplification applications

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital transistors built-in resistors UMH15N SOT-363 DIGITAL TRANSISTOR (NPN+NPN) FEATURES z Two DTC144T chips in a package z Transistor elements are independent, eliminating interference z Mounting cost and area can be cut in half.

Contextual Info: MOTOROLA Order this document by BUH150/D SEMICONDUCTOR TECHNICAL DATA BUH 150 D esigner’s Data Sheet POWER TRANSISTOR 15 AMPERES 700 VOLTS 150 WATTS SWITCHMODE NPN Silicon Planar Power Transistor The BUH150 has an application specific s ta te -o f-a rt die designed for use in

2SK458

Abstract: 2SK45
Contextual Info: tr m & m m M O S « # * * * ''* ? - h 9 M O S Field Effect Pow er Transistor 2SK458 N f t ^ ' 0r7 - M O S FET X 'f dUfls X i f f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK458ii, FET PACKAGE DIMENSIONS Unit : mm T*, iS S & D C

2SA1626

Abstract: S0532 TRANSISTOR BO 346 X108 TIA03
Contextual Info: NEC À Silicon Transistor 2SA1626 PNP ¡S& ÉL Sil i E X -f "J *f-> *f PN P Silicon Triple Diffused Transistor High Speed High Voltage Switching ft ftw m m o PtjÉJ'E'C-to V Ceo = — 400 V o x ^ y f > ^ " X : mm 7.0 M A X . b°— tf<0.7 /US T a = 25 ° C )

MARKING toshiba TLP621-4

Abstract: TLP621 11-5B2 E67349 TLP621-2 TLP621-4 ul standards for relay
Contextual Info: T O S H IB A TLP621 ,TLP621-2,TLP621 -4 TOSHIBA PHOTOCOUPLER TL P 621, T L P GaAs IRED & PHOTO-TRANSISTOR 6 2 1 -2 , T L P 6 2 1 -4 PRO GRAM M ABLE CONTROLLER AC /D C -IN PU T MODULE SOLID STATE RELAY The TOSHIBA TLP621, -2, and -4 consists of a photo-transistor

transistor D 716

Contextual Info: IMH15A Transistor, digitai, dual, NPN, with 1 resistor Features Dimensions Units : mm • available in SMT6 (IMD, SC-74) package • package marking: IMH15A; H15 IMH15A (SMT6) 2 .9 ± 0 .2 1. 9 2 0 . 2 u .a r fo.95 0.95Ì • • • package contains two independent

manson

Abstract: JESD22-A101 JESD22-A102 JESD22-A103 JESD22-A113
Contextual Info: INCH-POUND MIL-PRF-19500/695 30 April 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, PNP, SILICON, SWITCHING, TYPE 2N4033UE1 JAN, JANTX, JANJ This specification is approved for use by all Departments and Agencies of the Department of Defense.

2N2907AUE1

Abstract: award 686 qm marking code sot-23 JESD22-A101 JESD22-A102 JESD22-A103 JESD22-A113 MIL-PRF19500 MARKING code sot23 h15
Contextual Info: INCH-POUND MIL-PRF-19500/686 30 April 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, PNP, SILICON, SWITCHING, TYPE 2N2907AUE1 JAN, JANTX, JANJ This specification is approved for use by all Departments and Agencies of the Department of Defense.

Contextual Info: LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC3837T1G z Features 1.High transition frequency. Typ.fT=1.5GHz 2.Small rbb`Cc and high gain.(Typ.6ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements.

113ZS

Abstract: DTA113Zs
Contextual Info: DTD113ZS Digital transistor, NPN, with 2 resistors Features Dimensions Units : mm • available in SPT (SC-72) package • a built-in bias resistor allows inverter circuit configuration without external input resistors • bias resistor consists of a thin-film

ca3042

Abstract: RCA FM Receiver Circuits A3042 CA3042E schematic diagram fm tube Ca 3042 equivalent 12fx5
Contextual Info: Linear Integrated Circuits CA3042 Wide-Band Amplifier, FM Detector AF Preamplifier/Driver For Sound Sections of TV Receivers Using Transistor-Type AF Output Amplifiers Features: 14-Lead Quad-In-Line Plastic Package Q SUFFIX H-1596 High sensitivity - input lim iting

Contextual Info: Power Transistor Arrays PU3214, PU4214, PU4514 Silicon NPN Epitaxial Planar Type PU3214, PU4214, PU4514 Package Dimensions PU3214 U n it! m m 4.2max. 20.5max. I-h - n E o Power Amplifier, Switching Complementary Pair with PU3114, PU4114, PU4414 0.8+0.25IF

Contextual Info: LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor z Features L2SC3837T1G S-L2SC3837T1G 1.High transition frequency. Typ.fT=1.5GHz 2.Small rbb`Cc and high gain.(Typ.6ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements.

B1238

Abstract: 2SB1238 transistor 2sb1238
Contextual Info: 2SB1238 Transistor, PNP Features Dimensions Units : mm • available in ATV TV2 package • high power: Pc = 1 W 2SB1238 (ATVTV2) • high breakdown voltage and large current capacity: V CEO = -80 V, lc = -0.7 A • complementary pair with 2SD1859 Applications

PU3119

Abstract: PU3219 PU4119 PU4219 PU4419 PU4519
Contextual Info: Power Transistor Arrays PU3119, PU4119, PU4419 PU3119, PU4119, PU4419 Silicon NPN Triple-Diffused Planar Type Package Dimensions PU3119 U n i t ’. m m 4.2max. 20.5max. Power Amplifier, Switching Domplementary Pair with PU3219, PU4219, PU4519 Iflililí If IfIf °-8±0'S

PU4424

Abstract: PU4124 PU3124
Contextual Info: Power Transistor Arrays PU3124, PU4124, PU 4424 PU3124, PU41.24, PU4424 Package Dimensions P U 3124 Unit! mm 4.2max. 20.5max. Silicon NPN Triple-Diffused Planar Darlington Type Power Amplifier, Switching 0.8 ±0.25 4 ^0.5 + 0 .15 1.0±0.25 2.54 + 0.2 I 0 .5 + 0 .1 5

2SJ204

Abstract: 2SK1582 marking h15
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ204 P-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING Unit: mm The 2SJ204, P-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 2.8 ±0.2 2.9 ±0.2 relays, and solenoids.

Contextual Info: SANKEN ELECTRIC CO LTD SSE T> • 7*1=10741 0000*160 433 H S A K J Silicon NPN Triple Diffused Planar ☆High Speed Switching Transistor 2SC4298 e Outline Dewing 5 . . FM100 Application Example : General Purpose Electrical Characteristics A bsolu te M a x im u m Ratings

SC8810

Abstract: transistor h9 DTC124EK equivalent DI-74 H9 transistor marking DTC114TK dtc143tk
Contextual Info: D I G I TA L T R A N S I S T O R A R R AY S DUAL ISOLATED NPN TRANSISTOR CIRCUITS • COMPLETE SUB–CIRCUITS IN A SINGLE PACKAGE: SAVE PLACEMENT COSTS, INCREASES RELIABILITY • APPLICATIONS INCLUDE: PRE-AMPS, TV TUNERS, MIXER OSCILLATORS, INTERFACING LOGIC,

ic ma 8910

Abstract: PU4117 PU3117 PU4417
Contextual Info: Power Transistor Arrays PU3117, PU4117, PU4417 PU3117, PU4117, PU4417 Silicon NPN Triple-Diffused Planar Type Package Dimensions PU3 117 Unit !m m 4 2ma\ 20 5 m a \ Power Amplifier, Switching • Features 0 8= 0 2 | _ • H igh DC c u r re n t gain h FE