200 watt audio ic
Abstract: KSA928A-Y transistor HFE 400 1w
Text: KSA928A KSA928A Audio Power Amplifier • Complement to KSC2328A • Collector Power Dissipation : PC=1W • 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSA928A
KSC2328A
O-92L
EmiO-92
200 watt audio ic
KSA928A-Y
transistor HFE 400 1w
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transistor HFE 400 1w
Abstract: No abstract text available
Text: KSC2328A KSC2328A Audio Power Amplifier Applications • Complement to KSA928A • Collector Power Dissipation : PC=1W • 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSC2328A
KSA928A
O-92L
KSC2328A
O-92-3
transistor HFE 400 1w
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transistor HFE 400 1w
Abstract: KSA931
Text: KSA931 KSA931 Low Frequency Amplifier & Medium Speed Switching • Complement to KSC2331 • Collector-Base Voltage : VCBO= -80V • Collector Power Dissipation : PC=1W TO-92L 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSA931
KSC2331
O-92L
transistor HFE 400 1w
KSA931
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alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
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Hig86-755-3679515
alternator diode 1776 B
2az marking transistor sot-23
SMD SOT23 transistor MARK Y2
ic mb4213
NEC 12F triac
F10P048
ktc3114 equivalent
SMD TRANSISTOR MARKING 02N
DIODE PJ 57 ss14
BC517 equivalent
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QM5HL-24
Abstract: 2sk2850 transistor qm5hl 2SK2850 transistor pnp 600v. 1a. to 92 QM5HL24 MG20G6EL1 600V PNP pnp transistor 600V NPN Transistor 600V
Text: Next W M.T O .C Semiconductors00-YDiscretes W 1 M.T . O W C W WW .100Y. M.T O W .C ZTX~Series Transistors .TW W product Detailed Ware available on: us. 100y. com. tw W 00Y specifications 1 M.T . M O W O C . .C WW .1Pol00YIc max Part No. Product No. Manufacturer
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10silicon
ZTX653
3P/TO-92
NPN00Y
ZTX689B
ZTX690B
NPN100Y
AT-31033-TR1
QM5HL-24
2sk2850 transistor
qm5hl
2SK2850
transistor pnp 600v. 1a. to 92
QM5HL24
MG20G6EL1
600V PNP
pnp transistor 600V
NPN Transistor 600V
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KSA928A
Abstract: KSC2328A
Text: KSC2328A KSC2328A Audio Power Amplifier Applications • Complement to KSA928A • Collector Dissipation : PC=1W • 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSC2328A
KSA928A
O-92L
KSA928A
KSC2328A
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KSA928A
Abstract: KSC2328A
Text: KSA928A KSA928A Audio Power Amplifier • Complement to KSC2328A • Collector Dissipation : PC=1W • 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSA928A
KSC2328A
O-92L
KSA928A
KSC2328A
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KSA928A
Abstract: KSC2328A
Text: KSC2328A KSC2328A Audio Power Amplifier Applications • Complement to KSA928A • Collector Power Dissipation : PC=1W • 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSC2328A
KSA928A
O-92L
KSA928A
KSC2328A
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KSA928A
Abstract: KSC2328A KSC2328
Text: KSC2328A KSC2328A Audio Power Amplifier Applications • Complement to KSA928A • Collector Power Dissipation : PC=1W • 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSC2328A
KSA928A
O-92L
KSA928A
KSC2328A
KSC2328
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KSA928A
Abstract: KSC2328A 5000 watt audio amplifier
Text: KSA928A KSA928A Audio Power Amplifier • Complement to KSC2328A • Collector Power Dissipation : PC=1W • 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSA928A
KSC2328A
O-92L
KSA928A
KSC2328A
5000 watt audio amplifier
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KSA928A
Abstract: KSC2328A
Text: KSA928A KSA928A Audio Power Amplifier • Complement to KSC2328A • Collector Power Dissipation : PC=1W • 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSA928A
KSC2328A
O-92L
KSA928A
KSC2328A
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KSA928A
Abstract: KSC2328A
Text: KSA928A KSA928A Audio Power Amplifier • Complement to KSC2328A • Collector Power Dissipation : PC=1W • 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSA928A
KSC2328A
O-92L
KSA928A
KSC2328A
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KSA931
Abstract: KSC2331 PW350
Text: KSA931 KSA931 Low Frequency Amplifier & Medium Speed Switching • Complement to KSC2331 • Collector-Base Voltage : VCBO= -80V • Collector Dissipation : PC=1W TO-92L 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSA931
KSC2331
O-92L
KSA931
KSC2331
PW350
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KSA931
Abstract: KSC2331
Text: KSA931 KSA931 Low Frequency Amplifier & Medium Speed Switching • Complement to KSC2331 • Collector-Base Voltage : VCBO= -80V • Collector Power Dissipation : PC=1W TO-92L 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSA931
KSC2331
O-92L
KSA931
KSC2331
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KSA931
Abstract: KSC2331
Text: KSA931 KSA931 Low Frequency Amplifier & Medium Speed Switching • Complement to KSC2331 • Collector-Base Voltage : VCBO= -80V • Collector Power Dissipation : PC=1W TO-92L 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSA931
KSC2331
O-92L
KSA931
KSC2331
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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1N5761
Abstract: toroid FT10 BUL45G BUL45 marking code t1a MUR150 MJE210 MPF930 MTP12N10 MTP8P10
Text: BUL45G NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast and in Switchmode Power supplies up to 50 Watts. Features • Improved Efficiency Due to: Low Base Drive Requirements (High and Flat DC Current Gain hFE)
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BUL45G
O-220AB
21A-09
BUL45/D
1N5761
toroid FT10
BUL45G
BUL45
marking code t1a
MUR150
MJE210
MPF930
MTP12N10
MTP8P10
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1N5761
Abstract: marking code t1a BUL45 BUL45G MJE210 MPF930 MTP12N10 MTP8P10 MUR105 MUR150
Text: BUL45 NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast and in Switchmode Power supplies up to 50 Watts. Features • Improved Efficiency Due to: ♦ Low Base Drive Requirements (High and Flat DC Current Gain hFE)
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BUL45
O-220AB
21A-09
BUL45/D
1N5761
marking code t1a
BUL45
BUL45G
MJE210
MPF930
MTP12N10
MTP8P10
MUR105
MUR150
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BZX85C12V
Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes
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DO-15
DO-201AD
O-220AC
T0202-3
STGP3NB60HD*
STGP7NB60HD*
STGP3NB60HD
STGP7NB60HD
BZX85C12V
TOSHIBA 2N3055
bta41-600b application
BTA41-600B firing circuit
TAB 429 H toshiba
BZX85C20V
SCR tyn612 pin configuration
picaxe
TYN612 specification
2SA1085E
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2SA1619
Abstract: 2SA1619A 2SC4208 2SC4208A transistor HFE 400 1w
Text: Transistor 2SC4208, 2SC4208A Silicon NPN epitaxial planer type For low-frequency output amplification and driver amplification Complementary to 2SA1619 and 2SA1619A Unit: mm 5.0±0.2 4.0±0.2 • Absolute Maximum Ratings Parameter Ta=25˚C Symbol Collector to
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2SC4208,
2SC4208A
2SA1619
2SA1619A
2SC4208
2SA1619A.
2SA1619A
2SC4208
2SC4208A
transistor HFE 400 1w
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smd transistor k 1540
Abstract: 703 TRANSISTOR smd transistor 835 transister transister smd DRF1401 NPN medium power transistor in a smd SiGe POWER TRANSISTOR SMD transister smd transistor js
Text: UHF POWER TRANSISTOR DRF1401 NPN SiGe RF TRANSISTOR The DRF1401 is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-223 SMD package. The DRF1401 can be used as a driver device or an output device, depending on the specific application.
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DRF1401
DRF1401
OT-223
900MHz
100nF
100pF
smd transistor k 1540
703 TRANSISTOR smd
transistor 835
transister
transister smd
NPN medium power transistor in a smd
SiGe POWER TRANSISTOR
SMD transister
smd transistor js
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2SD1966
Abstract: 2SD1255M 2SB maintenance IMB6 2SC2808
Text: h -7 > y 7, $ /Transistors h z 7 > y Z $ $ H n h —W h 7 > y ^ ^ i p n — f t ü / T r a n s is t o r s Summary • h 7 v 3. $ /Transistors 2SA/2SB/2SC/2SC/2SD Type V ceo (V ) fT(M H z) Cob(pF) hFE Package Page 6.5 82-390 FTR 75 Icm - 1 .5 A 300 200 5.5
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2SA785
2SA790
2SA790M
2SA806
2SA821
2SA825
2SA825S
2SA83Û
2SA830S
2SA854
2SD1966
2SD1255M
2SB maintenance
IMB6
2SC2808
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Untitled
Abstract: No abstract text available
Text: MICROSEMI CORP/ WATERTOlilN WT'iba 00124^ 5DE D POWER DARLINGTONS JAN, JAN, JAN, JAN, 5 Amp, 150V, NPN JANTX JANTX JANTX JANTX 07b & JANTXV & JANTXV & JANTXV & JANTXV IUNIT 2N6350 2N6351 2N6352 2N6353 /FEATURES DESCRIPTION • • • • Unitrode NPN Darltngtons consist of a
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2N6350
2N6351
2N6352
2N6353
MIL-S-19500/472
2N6350
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DG40B
Abstract: DY TRANSISTOR PN918
Text: u c t or" PN918 C MMBT918 TO-92 SOT-23 B M ark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. A b s o lu t e M a x im u m R
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PN918
MMBT918
PN918
OT-23
bSD113D
Q40bQc
DG40B
DY TRANSISTOR
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