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    TRANSISTOR HJ 388 Search Results

    TRANSISTOR HJ 388 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR HJ 388 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D2504 transistor

    Abstract: d636 transistor transistor D450 transistor d525 d1944 d1405 transistor transistor d412 transistor D454 NF 817 NE329S01
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE329S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE329S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high mobility electrons. Its excellent low


    Original     		PDF NE329S01 NE329S01 NE329S01-T1 D2504 transistor d636 transistor transistor D450 transistor d525 d1944 d1405 transistor transistor d412 transistor D454 NF 817

    NEC D288

    Abstract: d1397 D331 transistor transistor d288 nec d1594 D78 NEC D1594 transistor nec D78 transistor d168 D1116
    Text: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    Original     		PDF NE32984D NE32984D NEC D288 d1397 D331 transistor transistor d288 nec d1594 D78 NEC D1594 transistor nec D78 transistor d168 D1116

    O2W transistor

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KHB2D0N60P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB2D0N60P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode


    Original     		PDF KHB2D0N60P/F/F2 KHB2D0N60P KHB2D0N60F KHB2D0N60F2 KHB2D0N60F O2W transistor

    ups 500va 220v 50hz circuit diagram

    Abstract: 230v ac to 12v dc without transformer circuit 220V AC 12V DC regulated switching schematic diagram 48v dc motor speed controller TRANSISTOR SMD 58W dc 220v motor speed control circuit with scr Fuse RH A4 2A 250V OMRON C200H relay 5 pin 12v 6a ujt 2646
    Text: Automation Controls Group Catalog Control Panel Relays Safety Relays Interface Terminal Automation Controls Group Catalog 2010-2011 panasonic-electric-works.net/ac Control Panel Relays¥Safety Relays¥Interface Terminal 2010-2011 Please contact .


    Original     		PDF ASCT1B382E 201004-3YT ups 500va 220v 50hz circuit diagram 230v ac to 12v dc without transformer circuit 220V AC 12V DC regulated switching schematic diagram 48v dc motor speed controller TRANSISTOR SMD 58W dc 220v motor speed control circuit with scr Fuse RH A4 2A 250V OMRON C200H relay 5 pin 12v 6a ujt 2646

    SMD M05 sot23

    Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
    Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly


    Original     		PDF 2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404

    free transistor equivalent book 2sc

    Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


    Original     		PDF X10679EJHV0SG00 free transistor equivalent book 2sc uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002

    ecg semiconductors master replacement guide

    Abstract: transistor SMD marked RNW th 20594 TRANSISTOR si 6822 MIL-STD-202F-201A CT 1975 sam transistors br 6822 sun hold ras 2410 relay TRANSISTOR SMD MARKING CODE jg Mist Ultrasonic Humidifier
    Text: RELIABILITY OF SEMICONDUCTOR DEVICES I. RELIABILITY OF SEMICONDUCTOR DEVICES 1. OUR PHILOSOPHY OF QUALITY 2. SEMICONDUCTOR RELIABILITY RELIABILITY OF SEMICONDUCTOR DEVICES I. RELIABILITY OF SEMICONDUCTOR DEVICES 1. OUR PHILOSOPHY OF QUALITY Since its foundation, Mitsubishi Electric has been seeking a philosophy of extending the business and contributing the society with high


    Original     		PDF

    A1000-REV00k9040-IE

    Abstract: AX-REM01K9050-IE a1000-fia3071-re A1000-FIV3005-RE A1000-REV00k6050-IE A1000FIA3105RE AX-FIM1024-RE
    Text: Listino prezzi Validità 1° GENNAIO 2014 industrial.omron.it /67/238731'</32+ +22'/3  ";CI?A;A?;CI;, ? ? :;:?97I?7AH;IIDG;;A;IIGDC?9D G;AE;G9?G9J?IDHI7BE7ID B?9GD?CI;GGJIIDG? ;99


    Original     		PDF

    NEC Ga FET marking L

    Abstract: U/25/20/TN26/15/850/NE32984D
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm


    OCR Scan     		PDF NE32984D NE32984D NE32984D-SL NE32984Dr NEC Ga FET marking L U/25/20/TN26/15/850/NE32984D

    Transistor NEC K 3654

    Abstract: NEC Ga FET marking L NEC 2505 NEC k 3654 NEC Ga FET marking A KA transistor 26 to 40 GHZ NEC 1093 nec gaas fet marking low noise, hetero junction fet NEC Ga FET marking V
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS


    OCR Scan     		PDF NE32984D NE32984D NE32984D-T1A NE32984D-SL NE32984D-T1 Transistor NEC K 3654 NEC Ga FET marking L NEC 2505 NEC k 3654 NEC Ga FET marking A KA transistor 26 to 40 GHZ NEC 1093 nec gaas fet marking low noise, hetero junction fet NEC Ga FET marking V

    b102 transistor

    Abstract: A200Y Transistor b103 1251C 2DI100M-050 2D1100M-050 53bs
    Text: 2DI100M -050 iooa I Outline Drawings POWER TRANSISTOR MODULE • W J t : Features High DC Current Gain • f f i i f t h FE • B i2 T i'iv l-'y ? High Speed Switching : A p p lic a tio n s 9 • General Purpose Inverter • Uninterruptible Power Supply


    OCR Scan     		PDF 2DI100M-050 E82988 11S19# I95t/R89) b102 transistor A200Y Transistor b103 1251C 2D1100M-050 53bs

    MTP3N60FI

    Abstract: No abstract text available
    Text: ^ 7 SGS-THOMSON MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE Voss ^OS on •d MTP3N60 MTP3N60FI 600 V 600 V 2.5 ß 2.5 Q 3 A 2.5 A • HIGH VOLTAGE FOR OFF-LINE APPLICATIONS • ULTRA FAST SWITCHING TIMES FOR


    OCR Scan     		PDF MTP3N60 MTP3N60FI 10OKHz O-220 ISQWATT220 500ms MTP3N60FI

    2SC503

    Abstract: 2SC504 2SC503-Y 2SA504 transistor 2sc503 SA508 2SC504-O 2sc503 x 2SC504-GR toshiba 2sc5
    Text: 2 s c 503 5 /U D :/N P N ie 9 d p î/? J U fê h 5 :/5 > X 9 P C T S £ SILICON NPN O EPITAXIAL I l i M TRANSISTOR ' M (PCT PROCESS 2 s c 504 y / s a o H i g h F r e q u e n c y Ampl i f i e r Appl i c a t ions o H ig h Speed S w i t c h i n g A p p l i c a t i o n s


    OCR Scan     		PDF 150MHz 800mW 600mA SA508. 2SA504 2SC503 2SC504 28C503 28C504 2SC504 2SC503-Y 2SA504 transistor 2sc503 SA508 2SC504-O 2sc503 x 2SC504-GR toshiba 2sc5

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    HLP5

    Abstract: full adder using x-OR and NAND gate OAI221 OA41 G5108
    Text: VITESSE SEMICONDUCTOR CORPORATION Data Sheet High Performance SCFUDCFL Gate Arrays SCFX Family Features • Tailored Specifically for High Performance Telecommunications and Data Communica­ tions Applications. 2.5 GHz Performance. Phase-Locked Loop Megacells Available:


    OCR Scan     		PDF STS-3/STS-12 G51085-0, 00030flfl HLP5 full adder using x-OR and NAND gate OAI221 OA41 G5108

    LOG RX2 1037

    Abstract: wiring VDG 13 relay private automatic branch exchange M0331 LMN 358 C33120 JBM Electronics IC KA 2247
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC The M C33120 is designed to provide the interface between the 4-wire side of a central office, or PBX, and the 2-wire subscriber tine. Interface


    OCR Scan     		PDF MC33120 C33120 MC3312Ü LOG RX2 1037 wiring VDG 13 relay private automatic branch exchange M0331 LMN 358 JBM Electronics IC KA 2247

    IAO5 Sharp

    Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
    Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The


    OCR Scan     		PDF Q60103- thS10 to3530 to4600 to4600 IAO5 Sharp free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071

    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


    OCR Scan     		PDF O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497

    BF547A

    Abstract: transistor bf 175 BFG65 equivalent BF547B BFG25AXD
    Text: Philips Sem iconductors RF Wideband Transistors The New Generation Contents page PREFACE 3 SELECTION GUIDE 6 S-PARAMETERS 22 SPICE AND PACKAGE PARAMETERS 44 THERMAL CHARACTERISTICS 48 DEVICE DATA in alpha-num eric sequence 54 OUTLINES 442 INDEX 448 DEFINITIONS


    OCR Scan     		PDF LCD01 BF547A transistor bf 175 BFG65 equivalent BF547B BFG25AXD

    ST 3055

    Abstract: "routing tables"
    Text: HD66705U Low-Power Dot-Matrix Liquid Crystal Display Controller/Driver HITACHI Description The H D 66705U dot-m atrix liquid crystal display controller and driver LSI displays alphanum erics, katakana, hiragana, and symbols. It can be configured to drive a dot-matrix liquid crystal display under the


    OCR Scan     		PDF HD66705U 66705U HD66705U 12-character ST 3055 "routing tables"

    WIMA TFM

    Abstract: Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A
    Text: TENTH EDITION ELECTRONIC COMPONENTS CATALOGUE FAIRCHILD FERRANTI WAYCOM comway BECKMAN SPRAGUE ASTRALUX REDPOINT GREENPAR electronics limited MOLEX MARKET STREET BRACKNELL BERKS RG121JU RADIATRON TEL: SALES, BRACKNELL 0344 24765 TELEX:847201 ERG HELLERMANN


    OCR Scan     		PDF RG121JU WIMA TFM Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A

    transistor cross reference

    Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
    Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC


    OCR Scan     		PDF

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    TIS43

    Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
    Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.


    OCR Scan     		PDF 2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent