TRANSISTOR IR 652 P Search Results

Contextual Info: i[-jw -iL iUV/U U HIGH-EFFICIENCY STEP-DOWN DC-DC CONVERTER SC1578 TEL:805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.conn January 29, 1998 DESCRIPTION FEATURES The SC1578 is a high performance step-down DC-DC converter, designed to drive an external P-channel

transistor IR 652 P

Contextual Info: 5V I3 .3V I3V o r A djustable, High-Efficiency, L o w IQ, Step-Down Controllers DC-DC T hese d e v ic e s use m in ia tu re e xte rn a l co m p o n e n ts . Their high sw itching fre q u e n cy up to 300kHz allows for less than 9mm diam eter surface-m ount inductors.

"RCMM" protocol

Abstract: philips RC-MM xtal 24mhz RCMM Philips TSIP5201 ir transmitter H11A 3.3v xtal 12MHz RC5 Infrared protocol philips PDIUSBD11
Contextual Info: Philips Semiconductors 1 Oct 98 AN10012-01 previous filename: USB-IR_DONGLE.pdf Implementing a USB-to-Infrared (Philips RCMM) Dongle - USB IR HID Device (OVU1000, Reference Design Ver 1.1) - USB Compound Hub with IR HID Device Author: Wim, Lemay Edited by: Wei Leong, Chui

"RCMM" protocol

Abstract: xtal 12MHz ir receiver transistor H11A 3.3v diagram receiver and transmitter for microcontroller RC5 Infrared transmitter philips usb gamepad controller ir receiver 36khz P80C652 Force Sensitive Resistor
Contextual Info: Philips Semiconductors 1 Oct 98 AN10011-01 previous filename: USB-IR DONGLE.pdf Implementing a USB-to-Infrared (Philips RCMM) Dongle - USB IR HID Device (OVU1000, Reference Design Ver 1.1) - USB Compound Hub with IR HID Device Author: Wim, Lemay Edited by: Wei Leong, Chui

transistor IR 652 P

Abstract: FS Series Miniature Power Film TH Resistor MAX649CSA
Contextual Info: ykiyjxiw i 19-0225; Rev 1; 7/94 , 5 V /3 .3 V /3V or Adjustable High-Efficiency, Low IQ, Step-Down DC-DC Controllers T he se d e v ic e s use m in ia tu re e xte rn a l c o m p o n e n ts . Their high sw itch in g fre q u e n cy up to 300kHz allows for less than 9mm diam eter surface-m ount inductors.

Transistor 2SC 2166

Abstract: transistor IR 652 P 2166 1j1 bsv 81 X12X15
Contextual Info: ESC D • aE35b05 0004602 H ■ S I E G , yvjr-// NPN Transistor for Switching Applications SIEMENS AKTIENGESELLSCHAF - BSV 65 ° ' BSV 65 is an epitaxial NPN silicon planar switching transistor in TO 2 3 6 plastic package 2 3 A 3 DIN 4 1 8 6 9 designed for use in thick and thin film circuits.

13B1

Abstract: 20-PIN LR36685 RJ21R3BA0PT GBJ-LG TT 2222 Horizontal Output Transistor diagram TT 2222 Horizontal Output Transistor transistor tt 2222 vertical
Contextual Info: BACK SHARP R J 2 1 R 3 B A P RJ21R3BA0PT 1/1.8-type Interline Color CCD Area Sensor with 4 200 k Pixels T DESCRIPTION • Package : The RJ21R3BA0PT is a 1/1.8-type 9.13 mm solid- 20-pin half-pitch DIP [Plastic] state image sensor that consists of PN photo­

20-PIN

Abstract: LR36685 RJ21R3BA0PT
Contextual Info: BACK RJ21R3BA0PT 1/1.8-type Interline Color CCD Area Sensor with 4 200 k Pixels RJ21R3BA0PT • Package : 20-pin half-pitch DIP [Plastic] P-DIP020-0500 Row space : 12.20 mm DESCRIPTION The RJ21R3BA0PT is a 1/1.8-type (9.13 mm) solidstate image sensor that consists of PN photodiodes and CCDs (charge-coupled devices). With

CD4538B

Contextual Info: February 1988 Semiconductor CD4538BM/CD4538BC Dual Precision Monostable General Description Features The CD4538B is a dual, precision monostable multivibrator with independent trigger and reset controls. The device is retriggerable and resettable, and the control inputs are inter­

d1758

Contextual Info: ROHM CO L T » N7 > vT , L<0E D $/J ransistors P 5 Freq. Power Amp. Epitaxial Planar NPN Silicon Transistors W ë ’tfiâ lll/ D im e n s io n s Unit : mm « f t 1) V ce o = 3 2 V, Ic m a x = 2 A, P c m a x= 1 O W O iH J f l £ 2) 2S B 1 1 8 2 i : a V j V v J iT

QM30tb

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM30TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE Q M 30TB-2HB Collector current. 30A Collector-emitter voltage. 1000V • hFE DC current gain. 750 • Insulated Type

Contextual Info: J BDV65; 65A BDV65B; 65C v _ _ SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circuit fo r audio output stages and general am plifier and switching applications. PNP complements are BD V 64, 64B and 64C.

Halbleiterbauelemente DDR

Abstract: BEL 639 transistor Sowjetische Halbleiter-Bauelemente KBC111 k4213 Germanium Transistor katalog radio fernsehen elektronik elektronik DDR KT904 KT372
Contextual Info: K a ta lo g sowjetischer H albleiterbauelem ente Si« linden im K a t a lo g t e il : Der hiermit unseren Lesern vorgelegte Katalog sowjetischer Transistoren, Dioden und integrierter Schaltkreise ist das Resultat enger Zusammen­ arbeit zwischen dem VEB Elektronikhandel Berlin und der Redaktion der

Contextual Info: SGS-THOMSON M54/74HC266 M54/74HC7266 HC266 QUAD EXCLUSIVE NOR GATE WITH OPEN DRAIN HC7266 QUAD EXCLUSIVE NOR GATE • HIGHSPEED tPD = 10 ns TYP. AT Vcc = 5 V ■ LOW POWER DISSIPATION Ice = 1 nA (MAX.) AT T a = 25 °C ■ HIGH NOISE IMMUNITY V nih = V nil = 28 % Vcc (MIN.)

Current Probe Amplifier 134

Abstract: schema television Tektronix 7603 bu134 w75c transistor bI 340
Contextual Info: BU 134 NPN S ILIC O N TR A N S IS TO R , D IF F U S E D MESA T R A N S IS T O R N P N S IL I C I U M , M E S A D I F F U S E The B U 1 3 4 is a high speed, high voltage power transistor primarily intended fo r use in power supply chopper circuits in T V receivers.

Contextual Info: Motor driver ICs 3-phase motor driver BA6870S The BA6870S is a 3-phase, full-wave, pseudo-linear motor driver suited for VCR capstan motors. The 1C has a torque ripple cancellation circuit to reduce wow and flutter, and an output transistor saturation prevention circuit that

transistor IR 652 P

Contextual Info: TO SH IBA M G200Q2YS50 TO SH IBA GTR M O D U L E SILICON N C H A N N EL IGBT MG200Q2YS50 HIGH POW ER SW ITCHING APPLICATIONS M O T O R CONTRO L APPLICATIONS • • H igh Input Impedance H igh Speed : tf= 0.3/is M ax. @Inductive Load Low Saturation Voltage

2SC2812

Abstract: k 2057 3v61 2SA1179 600S8 T29 marking marking AJR 2SC28 AJR MARKING
Contextual Info: SANYO SEMICONDUCTOR CORP 7T=]707t. DDD7B^t EBE D 2SA1179, 2SC2812 1 T -Z 1-I5 P N P /N P N Epitaxial Planar Silicon Transistors 2018A Low-Frequency General-Purpose Amp Applications 3218 F e a tu re s •Small-sized package perm itting the 2SA1179/2SC2812-applied sets to be made small and slim

MM1185

Abstract: BDV65 BDV65B PHILIPS 1980 BDV65, BDV64 T-33-Z dv65 BDV64 LP 7510 7Z82768
Contextual Info: BDV65; 65A BDV65B; 65C PHILIPS INTERNATIONAL SbE D • 711DÛ2b 0D433L0 301 « P H I N T - 3 3 - Z SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circuit fo r audio o utpu t stages and general am plifier and switching applications. PNP complements are B D V 64, 64B and 64C.

Contextual Info: DATA SHEET NEC PHOTOCOUPLER PS2651 ,PS2652,PS2651 L2.PS2652L2 LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE 6-PIN PHOTOCOUPLER -N E P O C S e rie s - DESCRIPTION T he P S 2 6 5 1 , P S 2652, P S 2651L2, P S 2 562 L2 are o p tica lly co u p le d iso lato rs co n ta in in g a G a A s light em ittin g diod e

s0250

Abstract: IC LM 7905 Regulator Ic 7905 pin details to92 2ampere transistor LM 323K A770 LM123A REGULATOR IC 7905 OMS 1410 AISI 1045
Contextual Info: _ MOTOROLA SC {TELECOM} Q M O T O R O L 14E D I b3b7SS3 DQaiTMT s I LM123, LM123A LM223, LM223A LM323, LM323A A " F S g - lH ^ S p ecification s and A p plications Inform ation 3-AMPERE, 5 VOLT POSITIVE VOLTAGE REGULATORS S IL IC O N M O N O LIT H IC

kc 637

Abstract: 2SC624
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

MWS5101EL3

Abstract: MWS5101EL2
Contextual Info: i!R H A R R IS \MJ MWS5101 M W S 51Û 1A S E M I C O N D U C T O R 256-Word x 4-Bit LSI Static RAM February 1992 Features Description • Industry Standard Pinout The MWS5101 and MW S5101A are 256 word by 4 bit static random access memories designed for use in memory

eft 317 transistor

Abstract: NUP4201 NUP4201DR2 STF202 MUN5212 13926 SMDA05-6R2 DARLINGTON TRANSISTOR ARRAY
Contextual Info: BRD8020/D Rev. 1, May-2002 MicroIntegration The Next Step in Simplicity and Miniaturization ON Semiconductor MicroIntegrationE The Next Step in Simplicity and Miniaturization BRD8020/D Rev. 1, May–2002  SCILLC, 2002 Previous Edition  2001 “All Rights Reserved”