TRANSISTOR ITT SEMICONDUCTORS Search Results

DD05215

Abstract: ADD1210
Contextual Info: A t* t '$ / PRELIM INARY DATA SHEET HAL115 Hall Effect Sensor IC à 4bfl2711 Ü005213 410 Edition June 30, 1995 6 2 5 1 -41 4-2 P D ITT Semiconductors ctors ITT HAL115 PRELIMINARY DATASHEET Hall Effect Sensor 1C in CMOS technology Marking Code Type Marking

Contextual Info: PRELIMINARY DATA SHEET HAL115 Hall Effect Sensor IC à 4bfl2711 D00S213 410 • Edition June 30, 1995 6251-414-2PD "I I I II I | ITT Semiconductors - I I I HAL115 Hall Effect Sensor 1C in CMOS technology I PRELIMINARY DATASHEET Marking Code Release Notes: Revision bars indicate significant

Contextual Info: SL6690C Semiconductors SL6690C MONOLITHIC CIRCUIT FOR PAGING RECEIVERS T he S L6690C is an IF s y s te m fo r paging receivers, c o n s is tin g o f a lim itin g IF a m p lifie r, q ua dra ture d e m o d u la to r, volta g e re g u la to r and a u d io tone a m p lifie r

sx3704

Abstract: BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram
Contextual Info: rh is Booklet • • • ue to fluctuations in availability, some types of semiconductors used in Thorn products have >f necessity changed from those originally specified and quoted in service literature. This )lus the fact that some service replacements are

itt 4116

Abstract: itt capacitors 4116 memory 4116 ITT IC 4027 pin diagram 4116 4027 itt ITT SEMICONDUCTORS ITT4
Contextual Info: ITT4116 16384-Bit Dynamic Random Access Memory 7-8 PHONb: 415 961-8121 TWX: (910) 379-6497 1121 SAN ANTONIO ROAD PALO ALTO, CALIF. 94303 TTT * 1 semiconductors * ITT4116 16384-Bit Dynamic Random Access Memory Features - Industry standard 16 pin DIP - 150 ns access time (ITT 4116-2)

Magnetic Field Sensor FLC 100

Abstract: transistor ITT
Contextual Info: HAL628, HAL638 ADVANCE INFORMATION Hall Effect Sensor 1C in CMOS technology Marking Code Type Tern perature Rimge Common Features: -• - switching offset compensation - operates from 4.5 V to 24 V supply voltage - overvoltage and reverse-voltage protection

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

2066 TVPO

Abstract: TVPO-2066 ITT ccu 3000 i IC ccu 2030 ITT CCU TVPO2066 transistor ITT ITT Semiconductors CCU 3060 NVM 3060
Contextual Info: NVM 3060 4096-Bit EEPROM Edition Feb. 14, 1990 6251-309-2/E ITT Semiconductors NVM 3060 Contents Page Section Title 3 1. Introduction 4 4 4 4 5 5 5 5 7 2. 2.1. 2.2. 2.3. 2.4. 2.5. 2.5.1. 2.5.2. 2.5.3. Specifications Outline Dimensions Pin Connections Pin Descriptions

Contextual Info: HAL556, HAL566 PRELIMINARY DATASHEET Hall Effect Sensor 1C in CMOS technology D esignation o f Hall Sensors HALXXXPP-T t Temperature Range: E or C _ Package: UA for TO-92UA, S for SOT-89A _ Type: 556,566 Features: - current output for two-wire application

ITT DIODE 125

Abstract: to92ua ITT Semiconductors 115c hall HALL Sensor TO92UA ITT Intermetall itt capacitor ITT Semiconductor IEC-68-2-58 INTERMETALL
Contextual Info: “ íJé 997 ITT INTERMETALL • 4fafl2711 DDGbS7E TMb ■ HAL115 Marking Code Hall Effect Sensor IC in CMOS technology Temperatiire Range Type Features: E C - operates from 4.3 to 24 V supply voltage with reverse voltage protection HAL 115UA 115E 115C - operates with magnetic fields from DC to 20 kHz

BU4507AX

Abstract: TRANSISTOR BU4507AX
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4507AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors.

ITT DIODE 125

Contextual Info: S ÏÏT Æ 1997 IT T • IN 4bô2711 0üübS7E TMb ■ T E R M E T A L L HAL115 Marking Code Hall Effect Sensor 1C in CMOS technology Temperati.ire Range Type Features: E C - operates from 4.3 to 24 V supply voltage with reverse voltage protection HAL 115UA

itt ol 170

Contextual Info: HAL114 ADVANCE INFORMATION Hall Effect Sensor 1C in CMOS technology Marking Code Type Tern perature Rimge Features: A - operates from 4.5 V to 24 V supply voltage HAL114S HAL114UA - overvoltage and reverse-voltage protection 114A 114E 114C - short-circuit protected open-drain output switch

BUJ202

Contextual Info: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ202A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in T 0220A B envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2722AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand Vces pulses up to 1700 V.

ESM 498

Abstract: TRANSISTOR BU4522AF BU4522AF
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour TV receivers and PC monitors.

PHP112

Contextual Info: Objective specification Philips Semiconductors P-channel enhancement mode MOS transistor PHP112 FEATURES DESCRIPTION • High speed switching P-channel enhancement mode MOS transistor in an 8-pin plastic S 0 8 SOT96-1 package. • No secondary breakdown

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2507AF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors.

bu4522ax

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4522AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour TV receivers and PC monitors.

BU1507AX

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1507AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors.

BSN3005

Contextual Info: Philips Semiconductors Objective specification N-channel enhancement mode MOS transistor BSN3005 FEATURES PINNING - SOT23 • High speed switching • No secondary breakdown • Direct interface to C-MOS, TTL etc. PIN SYMBOL 1 2 3 g DESCRIPTION gate s source

Contextual Info: Product specification Philips Semiconductors Silicon Diffused Power Transistor BU1507DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television

philips bfq32

Abstract: BFQ32
Contextual Info: Product specification Philips Semiconductors 7 PNP 4 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION 5bE » ^ 3 / - 2 . 3 BFQ32 711üfl5b G045420 41D H P H I N PINNING PNP transistor in a plastic SOT37 envelope, intended for use in UHF applications such as broadband

Contextual Info: N AflER PHILIPS/DISCRETE b 'lE » bbSB'lBl DD3DS35 bU3 «APX Product Specification Philips Semiconductors BUK444-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope, he device is intended for use in