TRANSISTOR J42 Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

BD443

Abstract: MGP540 BD228 BLW77 MGP523 RF POWER TRANSISTOR NPN vhf philips ceramic disc capacitors 1500 pf
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW77 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power

J423

Contextual Info: MOTOROLA Order this document by MJ423/D SEMICONDUCTOR TECHNICAL DATA M J423 H igh-V oltage NPN Silicon Transistor 10 AMPERE POWER TRANSISTOR NPN SILICON 400 VOLTS 125 WATTS . . . designed for m e d iu m -to -h ig h voltage inverters, converters, regulators and

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

BLW77

Abstract: neutralization push-pull philips Trimmer 60 pf
Contextual Info: PHILIPS bSE » INTERNATIONAL • 7110öSb D0b3277 SSO IPHIN BLW77 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am­

Contextual Info: N AMER PHILIPS/DISCRETE b'lE D b b S B ' m DDETBflD DM2 * A P X BLW77 J V . H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am­

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

2sa1943

Abstract: j4215 sc5200 transistor
Contextual Info: 2SA1943/FJL4215 PNP Epitaxial Silicon Transistor Applications • • High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: C I = -17A. High Power Dissipation : 150watts.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor . . . designed for UHF linear and large-signal amplifier applications. • Specified 12.5 Volt, 870 MHz Characteristics — Output Power = 0.5 Watts Minimum Gain = 8.0 dB

j353

Abstract: transistor j353 j353 transistor MRF559 TRANSISTOR J408 j361 MHW808
Contextual Info: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency TVansistor . . . designed for UHF linear and large-signal amplifier applications. • 0.5 W, 870 MHz HIGH-FREQUENCY TRANSISTOR NPN SILICON Specified 12.5 Volt, 870 MHz Characteristics —

TRANSISTOR j412

Contextual Info: SERIES COMMERCIAL TO-5 RELAYS 712 DPDT SERIES DESIGNATION RELAY TYPE 712 DPDT basic relay 712D DPDT relay with internal diode for coil transient suppression 712TN DPDT relay with internal transistor driver and coil transient suppression diode INTERNAL CONSTRUCTION

TRANSISTOR j412

Abstract: 712D-5 J412 5 pin 30 amp relay 712-12 712D-26 TELEDYNE RELAYS j412 dpdt relay ER412D J411
Contextual Info: SERIES COMMERCIAL TO-5 RELAYS 712 DPDT SERIES DESIGNATION 712 RELAY TYPE DPDT basic relay 712D DPDT relay with internal diode for coil transient suppression 712TN DPDT relay with internal transistor driver and coil transient suppression diode INTERNAL CONSTRUCTION

j4213-o

Abstract: j4213 a1962 J4213O J4213R 2SA1962O 2SA1962 2SA1962OTU A1962R FJA4213
Contextual Info: 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -17A High Power Dissipation : 130watts High Frequency : 30MHz.

j4215

Abstract: 2sa1943 transistor A1943 2sa1943 amplifier power amplifier 2sc5200 2sa1943 TRANSISTOR 2sa1943 2sa1943 Spice Models 2sc5200 amplifier J4215O 2sC5200, 2SA1943
Contextual Info: 2SA1943/FJL4215 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -17A. High Power Dissipation : 150watts. High Frequency : 30MHz.

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

j4213-o

Abstract: a1962 j4213 a1962o 2SA1962OTU 2SA1962RTU FJP1943 FJPF1943 transistor 2sc5242
Contextual Info: 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -15A High Power Dissipation : 130watts High Frequency : 30MHz.

J412

Abstract: TRANSISTOR j412 J114 453124 dpdt relay ER412D 732D rf311 TELEDYNE RELAYS 732-5 RELAYS
Contextual Info: SERIES COMMERCIAL SENSITIVE TO-5 RELAYS 732 DPDT SERIES DESIGNATION RELAY TYPE 732 DPDT basic relay 732D DPDT relay with internal diode for coil transient suppression 732TN DPDT relay with internal transistor driver and coil transient suppression diode INTERNAL CONSTRUCTION

j4213-o

Abstract: j4213 a1962 transistor b 1560
Contextual Info: 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -15A High Power Dissipation : 130watts High Frequency : 30MHz.

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

j4213

Abstract: j4213-o
Contextual Info: 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications • • High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: C I = -17A High Power Dissipation : 130watts High Frequency : 30MHz.

j4213

Abstract: j4213-o
Contextual Info: 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -15A High Power Dissipation : 130watts High Fequency : 30MHz.

j4215

Abstract: 2sa1943 2sc5200 amplifier circuit amplifier design 2SA1943 2sC5200, 2SA1943 A1943 2sa1943 transistor 2SC5200
Contextual Info: 2SA1943/FJL4215 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -15A. High Power Dissipation : 150watts. High Fequency : 30MHz.

motorola MRF559

Abstract: mrf559 transistor mrf559d J368 mw 137 MRF559 transistor J306 mrf559 v J9018 j353 transistor
Contextual Info: MOTOROLA Order this document by MRF559/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF559 . . . designed for UHF linear and large–signal amplifier applications. • Specified 12.5 Volt, 870 MHz Characteristics — Output Power = 0.5 Watts

j4215

Abstract: amplifier design 2sc5200 2sa1943 A1943 2sa1943 2sc5200 audio circuit spice 2sc5200 2sC5200, 2SA1943 spice model 2SC5200 2sa1943 2sa1943 amplifier J4215O
Contextual Info: 2SA1943/FJL4215 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -15A. High Power Dissipation : 150watts. High Frequency : 30MHz.