TRANSISTOR JD Search Results

TRANSISTOR JD Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR JD Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original		PDF
oz960 Abstract: khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors	Original	KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j	PDF
NEC semiconductor Abstract: 2sd2217 transistor PT 4500 C11531E NEC C11531E Contextual Info: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD2217 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2217 is a mold power transistor developed for lowfrequency power amplifiers and low-speed switching.	Original	2SD2217 2SD2217 C11531E) NEC semiconductor transistor PT 4500 C11531E NEC C11531E	PDF
2SC4553 Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC4553 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4553 is a power transistor designed especially for low PACKAGE DRAWING UNIT: mm collector saturation voltage and features large current switching at a	Original	2SC4553 2SC4553	PDF
BUK555-100A Abstract: wdss-100 Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK555-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.	OCR Scan	BUK555-100A/B BUK555 -100A -100B BUK555-100A/B BUK555-100A wdss-100	PDF
transistor 746 Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK545-60A/B Logic level GENERAL DESCRIPTION N-channe! enhancement mode logic level fietd-effect power transistor in a plastic full-pack	OCR Scan	BUK545-60A/B BUK545 transistor 746	PDF
PR37 RESISTOR Abstract: PR37 resistors Contextual Info: N AUER PHILIPS/DISCRETE b^E » bbS3^31 □□2'ISIS D72 BLW96 IAPX H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, A B and B operated high power industrial and military transmitting equipment in the h.f. and v.h.f. band. The transistor presents	OCR Scan	BLW96 PR37 RESISTOR PR37 resistors	PDF
Contextual Info: N AMER PHILIPS/DISCRETE fc^E D bbsa^i dos^ m tsd i IAPX BLW60C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized	OCR Scan	BLW60C nsforFigs16and17:	PDF
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in an isolated plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast	OCR Scan	PHX1N60	PDF
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK563-100A Logic level FET_ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface	OCR Scan	BUK563-100A SQT404 BUK563-100A	PDF
Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP10N40E GENERAL DESCRIPTION PHX5N40E QUICK REFERENCE DATA SYMBOL N-channel enhancement mode PARAMETER field-effect power transistor in a full pack, plastic envelope featuring high	OCR Scan	PHP10N40E PHX5N40E OT186A	PDF
S10080 Abstract: TJT-120 Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK556-60H Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	BUK556-60H T0220AB BUK556-60H S10080 TJT-120	PDF
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effeet power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology	OCR Scan	BUK9624-55 OT404	PDF
BUK555-60H Abstract: T0220AB Contextual Info: Product specification Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Automotive applications, Switched	OCR Scan	BUK555-60H T0220AB T0220AB; T0220 BUK555-60H T0220AB	PDF

GS 069 LF Abstract: BUK437-600B IP Semiconductors A/blf 187 Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	BUK437-600B GS 069 LF BUK437-600B IP Semiconductors A/blf 187	PDF
transistor pnp 30V 2A 1W Abstract: 2SA928 transistor 2SA928 5V 2A PNP transistor 500ma 30v Contextual Info: 2SA928 PNP SILICON TRANSISTOR DESCRIPTION TO-92B 2SA928 is PNP silicon planar transistor dedesigned for audio power amplifier. ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation	OCR Scan	2SA928 O-92B 500mA transistor pnp 30V 2A 1W transistor 2SA928 5V 2A PNP transistor 500ma 30v	PDF
Contextual Info: PHILIPS INTERNATIONAL bSE » E9 711GÖEb 0Db431b Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery	OCR Scan	0Db431b T0220AB BUK655-500B 711002b aab432D	PDF
PHB65N06T Abstract: T404 Contextual Info: Product specification Philips Semiconductors TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device	OCR Scan	PHB65N06T OT404 PHB65N06T T404	PDF
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose	OCR Scan	BUK463-60A SQT404	PDF
transistor 5d smd Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level fleld-effect power transistor In a plastic envelope suitable for surface mounting. Using ’trench’ technology the device	OCR Scan	BUK7606-55A SQT404 transistor 5d smd	PDF
k 246 transistor fet Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device	OCR Scan	BUK7675-55 k 246 transistor fet	PDF
BUK454-400B Abstract: BUK454 BUK454-400A T0220AB Contextual Info: BUK454-400A BUK454-400B Philips Components PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	BUK454-400A BUK454-400B BUK454 -400A -400B T0220AB; M89-1159/RC BUK454-400B BUK454-400A T0220AB	PDF
ld25 cv Abstract: BUK565-60H Contextual Info: Product specification Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in	OCR Scan	BUK565-60H OT404 ld25 cv BUK565-60H	PDF
Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in	OCR Scan	BUK582-60A OT223	PDF

TRANSISTOR JD Search Results

TRANSISTOR JD Result Highlights (5)

TRANSISTOR JD Datasheets Context Search

MN1280

oz960

NEC semiconductor

2SC4553

BUK555-100A

transistor 746

PR37 RESISTOR

S10080

BUK555-60H

GS 069 LF

transistor pnp 30V 2A 1W

PHB65N06T

transistor 5d smd

k 246 transistor fet

BUK454-400B

ld25 cv