TRANSISTOR JE 123 Search Results

D 1413 transistor

Abstract: SiGe POWER TRANSISTOR
Contextual Info: I = = = = •= IBMSGRF0100 IBMSGRF0100 EV Advance SiGe High Dynamic Range Low Noise Transistor Features • Low Noise Figure: N Fm in « 0.8dB @ 2.0G H z • Low O perating Voltage • Input IIP3 C apability: * Package: SO T353 ~ + 10dBm @ 2.0G H z, V q q = 2V, lc =5m A

M34512M2-XXXFP

Abstract: 4512 Group M34512M2 M34512M4 W32 MARKING M34512M4-XXXFP PU01 TDA 88 diode T 4512 H
Contextual Info: MITSUBISHI MICROCOMPUTERS RY A N IMI L E PR 4512 Group . ion cat cifi ct to e p je ls fina re sub a ot a is n limits s i Th etric m ice: Not e para m o S nge. cha SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION ●Timers Timer 1 . 8-bit timer with a reload register

Schmersal aes 1235 Ue 24 vdc

Abstract: transistor y1 AES 1235 Schmersal aes 1235 switchgear catalogue de transistor Schmersal sicherheitsrelais relais demarrage detecteur magnetique
Contextual Info: Montage- und Anschlussanleitung / Sicherheitsbaustein Mounting and wiring instructions / Safety monitoring module Instructions de montage et de câblage / Module de sécurité deutsch Bestimmung und Gebrauch Die Sicherheitsbausteine AES 1235 und 1236, zum Einsatz in

a 4514 v

Abstract: 41B code cmp119 M34513E4SP 4513 Group 54bl MITSUBISHI Microwave 4500 microcomputer MARKING W1 AD M34513E8FP
Contextual Info: MITSUBISHI MICROCOMPUTERS RY A N IMI L E PR 4513/4514 Group . ion cat cifi ct to e p je ls fina re sub a ot a is n limits s i Th etric m ice: Not e para m o S nge. cha SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION The 4513/4514 Group is a 4-bit single-chip microcomputer designed with CMOS technology. Its CPU is that of the 4500 series

Contextual Info: ERICSSON ^ PTB 20170 30 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor Description The 20170 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP

FX2N-8ex-es

Abstract: mitsubishi fx2n 32mr FX2N-8EYR-ES fx2n-48mr FX0N-24MT-DSS mitsubishi FX0N-60MT-DSS mitsubishi FX0N-60MR-ES FX2N 24MR mitsubishi FX0N-40MR-ES/UL FX2N-8EYR-ES/UL
Contextual Info: MELSEC FX0N/FX2N SYSTEMBESCHREIBUNG FX0N-Serie Die MELSEC FX0N-Serie Beschreibung Systemaufbau Ausstattungsmerkmale Klein-SPS mit günstigem Preis-LeistungsVerhältnis. Ȝ Klein Ȝ Schnell Ȝ Universell Ȝ Modular erweiterbar Ȝ Grundgerät mit der gesamten SPS-

transistor vergleichsliste

Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G

Contextual Info: Introduction This manual provides the information needed to configure the IQX Family devices using the JTAG interface. It is intended for users who plan to write their own code to configure the IQX devices. In addition, this manual explains how the boundary scan features implemented in the IQX devices can be used

Contextual Info: Philips Sem iconductors bb53T31 0031477 00T tM APX Product specification NPN 6 GHz wideband transistor BFP91A N AMER PHILIPS/DISCRETE DESCRIPTION bRE D PINNING NPN transistor in hermetically-sealed sub-miniature SOT173 and SOT173X micro-stripline envelopes. It features

LS 2027 audio amp

Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3

IC TB 1237 AN

Contextual Info: f Z 7 7# ^ S C S -T H O M S O N [Œ O T @ *S S EF73321 PCM LINE TRANSCEIVER . • . ■ NMOS TECHNOLOGY OPERATES FROM + 5 V SUPPLY DIGITAL TECHNO LO G Y THROUGHOUT EXTRACTS DISTANT CLO CK TRANSM ITTED BY A PCM TRUNK ■ CAN HANDLE PEAK TO PEAK JITTER AM PLI­

DTC123

Contextual Info: Transistors Digital transistors built-in resistors DTC 123 JE / DTC 123 JUA / DTC 123 JKA DTC 123 JSA •F eatu re s 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (se e th e equivalent c ir­

Contextual Info: Ordering number: EN 4502 2SK1961 i N-Channel Junction Silicon FET SAßiYO i High-Frequency Low-Noise Amp Applications A pp licatio n s • High-frequency low-noise amp applications. F e a tu re s • Adoption of FBET process •Large I yfs I • Small Ciss

RCA-CA3052

Abstract: TAA550 ul1202 Analogschaltkreise der Volksrepublik Polen ITT transistoren Scans-048 UL1321 Dii 1501 itk 120-2 UL1111
Contextual Info: H orst Schm ied Analogschaltkreise der Volksrepublik Polen ln der V olksrepublik Polen ist dir- V ereinigung U nitru OEM ! A lleinhersteller von H albleiterbauelem enten. tofertigt werden neben einem großen T ypenspektrum an diskreten H albleitern 112 T ypen digitaler

transistor BFR91A

Abstract: on 5295 transistor BFR91A BFR91A transistor BFQ23 bfr91a to92 transistor 1548 b TRANSISTOR BI 187 ON4185 EC 401 TRANSISTOR
Contextual Info: Philips Semiconductors bbS3T31 00 3 1Ö 2 0 ÔS5 M AP X Product specification BFR91A NPN 6 GHz wideband transistor b'ìE T> N AMER PHILIPS/DISCRETE FEATURES PINNING PIN • Low noise • Low intermodulation distortion • High power gain • Gold metallization.

EF73321C

Abstract: HDB3 EF73321 HL 941 EF73321P EF7333 PLCC20 PLCC-28 PLCC44
Contextual Info: f Z ^ 7 7 # S C S -T H O M S O N [Œ O T @ *S S EF73321 PCM LINE TRANSCEIVER . • . ■ NMOS TECHNOLOGY OPERATES FROM + 5 V SUPPLY DIGITAL TECHNO LO G Y THROUGHOUT EXTRACTS DISTANT CLO CK TRANSM ITTED BY A PCM TRUNK ■ CAN HANDLE PEAK TO PEAK JITTER AM PLI­

MH1SS1

Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
Contextual Info: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik

BEE 7CA

Abstract: 2N1234 2N1234 JAN
Contextual Info: Ml L - S -1 9 5 0 0 /17?A E U ” '” r \ E LA e rU U S Z Z _ SUPERSEDING m i f tncr\r\ /i to / r I \ I 7 J U U / 1 / 7 V,t u / iI -» A_ / ANUgU&Ti lI oz TO 1I iV M L “ 0 - s e m i c o n d u c t o r d e v i c e *, t r a n s i s t o r . p n p .

t636

Abstract: 557 sot143 T636 A S 223 858 015 636
Contextual Info: an A M P com pany Low Operating Voltage, High FT Bipoiar Microwave Transistors MA4T6365 V2.00 Case Styles Features • • • • • Designed for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and

74HC

Abstract: M16A M16D MM74HC123A MM74HC123AM MM74HC123AMTC MM74HC123ASJ MTC16
Contextual Info: Revised February 1999 E M IC O N D U C T G R T M General Description T he M M 74H C 123A high speed m onostable m ultivibrators one shots utilize advanced silicon-gate C M O S te ch n ol­ ogy. T h e y feature speeds com parable to low pow er Schottky TTL circuitry w hile retaining the low pow er and high

transistor BF 697

Abstract: transistor equivalent 0107 NA PJ 1269 bc1323 pj 0266 BFR540 BFS540 025-1 transistor c 4236 2999 npn
Contextual Info: Philips Sem iconductors • 7 1 1 D f l2 t j 00bT3D5 VbT ■ P H IN Product specification NPN 9 GHz wideband transistor BFS540 PINNING FEA T U R ES PIN CONFIGURATION PIN • High power gain D ESCRIPTIO N Code: N4 • Low noise figure • High transition frequency

TRANSISTOR C 557 B

Abstract: mpsh10 912 MPSH10 MPSH81
Contextual Info: Philips Semiconductors b b S 3 *Î3 1 0 0 3 2 1 Û1 7 fl 4 • APX Product specification NPN 1 GHz general purpose switching transistor MPSH10 b'lE T> N A PIER P H I L I P S / D I S C R E T E FEATURES • • PINNING Low cost High power gain. PIN 1 2 3 DESCRIPTION

4n4001

Abstract: LM 317 ST lm 317 LM317I 8 pin ic lm 317 ic lm 317 t LM317 application note pin diagram of lm 317 M317A d 317 transistor
Contextual Info: iJ f Q rnN|M LM317 3-Terminal Adjustable Output Positive Voltage Regulator T he LM 317 is adjustable 3 -terminal positive voltage external resistors to set the output voltage. Further, regulator capable o f supplying in excess em ploys internal current lim iting,

TRANSISTOR C 3619

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE1123 Bipolar Pow er PN P Low Dropout Regulator Transistor PNP LOW DROPOUT TRANSISTOR 4.0 AMPERES 40 VOLTS The M J E 1 1 2 3 is an applications specific device designed to provide low-dropout linear regulation for switching-regulator post regulators, battery powered system s