TRANSISTOR JSW Search Results

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

marking Kf SOT-89

Abstract: c71d KTA1666 KTC4379
Contextual Info: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1666 EPITAXIAL PLANAR PNP TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. FEATURES • Low Saturation Voltage : VCE Sat =-0.5V (Max.) (IC=-1A) • High Speed Switching Time : tstg=1.0^S(Typ.)

2SB1008

Contextual Info: Is ~ 7 > V $ /T ra n sisto rs 2SB 1008 2SB1008 PNP h> i5;Ji>jSW^]iill iffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Darlington Transistor • • 1 # - ' ) > W f ^ j i l S l / D i m e n s i o n s U n it : m m ) h > t ^ T - h FET'Æ >5o 2)BEfôlCjfô4kQCD$ÊÎ)t£F*3j&o >Sjf$

Contextual Info: • TqsqgB? ongflbo? q SCS-THOMSON BUR20 Rfflmg^omLioir^oin ! S 6 S-THQMSON 3QE I> HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR ADVANCE DATA HIGH CURRENT HIGH SWITCHING SPEED HIGH POWER GOOD SOA GOOD RBSOA INTERNAL SCHEMATIC DIAGRAM DESCRIPTION The BUR20 is a silicon multiepitaxial planar NPN

ocr4

Abstract: 2SD1762 transistor 2a h
Contextual Info: / T ransistors b~7 O C R 4 4 Q C 2SB11Í i 7 Ji/7' u - P N P h 7 > 15;Ji JSW^íÍlÍÍffl/Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • ii-Jfi\t"ji0 / /Dimensions Unit : mm) 1) VcE(sat) 0.5V (Typ.)t<£l'„ at lc / lB= 2 A / - 0 . 2 A 2) 2 S D 1 7 6 2 t z l > y j T i i 5 o

transistor JSW

Abstract: diode JSW FL 576-K125
Contextual Info: 6DI30M-050 30 a Outline Drawings POWER TRANSISTOR MODULE ‘ F e a tu re s • ifi5hFE High DC Current Gain • iS i S TA'V’f-'sif High Speed Switching : A p p lic a tio n s • 9 General Purpose Inverter • Uninterruptible Power Supply • N C lflM S tM

tc6105

Abstract: 2SK679 BH rn transistor 10285 TC-6105
Contextual Info: = t — 5> • 5/ - h M O S Field Effect P ow er Transistor 2SK679 2SK679Ü, 5 M W M m C co FE T T ", a i t s i z «t h x a v -f- > x T ~ t„ + T 9 & -3 -X -— 9 -t — %fcn> b ' ÿ A 7 ' i c * i l T " - f 0 # I t R d s o „ ^ 0 .5 £2 ( T Y P . ) @ V Gs = 8

AN4001

Abstract: laser diode spice model simulation Class E amplifier 300 watt mosfet amplifier class AB MRF transistor PIN diode MACOM SPICE model 27.12MHz power amplifier 27.12Mhz 500 watt mosfet power amplifier circuit diagram 1000 watt mosfet power amplifier
Contextual Info: Application Note AN4001 Application Note 300 Watt Class E Amplifier Using MRF151A Rev. 01262010 BACKGROUND Modern industrial applications for high-efficiency, switch-mode RF amplifiers include laser, plasma, magnetic resonance imaging MRI , and communications. The power levels and frequency of operation of industrial equipment used in these areas vary greatly. While plasma and heating applications tend to cluster at

TRANSFORMER bck 03

Abstract: transistor JSW 07 OP295
Contextual Info: Dual/Quad Rail-to-Rail Operational Amplifiers 0P-295/0P-495 ANALOG ► DEVICES FEATURES Rail-to-Rail Output Swing Single-Supply Operation: +3 V to 36 V Low Offset Voltage: 300 jaV Gain Bandwidth Product: 75 kHz High Open-Loop Gain: 1000 V /m V Unity-Gain Stable

Contextual Info: 6DI100A-050 iooa l± s < n - * : ï > = L - } V ' < n — \=7 > i > 7 ,9 =£\>n.-)V : Outline Drawings POW ER T R A N S IS T O R M ODULE • 4# ^ : Features ,' V K-'v* • 7 '} —jfc-f >J > V # 4 =t— Kl*9 E • hFE*''S!nL' • Including Free W heeling Diode

Contextual Info: r r u TECHNOLOGY n m _ 1A High Voltage, Efficiency i o » Switching Voltage Regulator F€flTUR€S DCSCRIPTIOn • Wide Input Voltage Range: 3V to 75V ■ High Switch Voltage: 100V ■ Low Quiescent Current: 4.5mA ■ Internal 1A Switch ■ Shutdown Mode Draws Only 120pA Supply Current

Contextual Info: Optical disc iCs 4-channel BTL driver for GD players BA6790FP/BA6791FP The BA6790FP and BA6791 FP are 4-channe! BTL drivers for CD player actuators and m otors. These ICs have inter­ nal 5 V regulators and general purpose operational am plifiers, and are m ounted to a 28-pin HSOP package, allow ­

transistor JSW

Abstract: jSw Diode
Contextual Info: TOSHIBA MG200Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 2 0 0 Q 1 US 5 1 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)

jSw Diode

Contextual Info: T O SH IB A MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage

transistor GY 721

Abstract: transistor JSW LT 723 ic jSw Diode
Contextual Info: TOSHIBA MG240V1US41 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT M G 2 4 0 V 1 US41 HIGH PO W E R SWITCHING APPLICATIONS M OTO R CONTROL APPLICATIONS • • • • The Electrodes are Isolated from Case. High Input Impedance Enhancement-Mode High Speed

transistor JSW

Abstract: toshiba srf
Contextual Info: T O S H IB A MG200Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS50 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)

Contextual Info: T O S H IB A MG200Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)

transistor JSW

Contextual Info: □ ANALOG DEVICES LowNoise, LowDrift Single-Supply Operational Amplifiers OP-113/0P-213/0P-413* FEATURES Single- or Dual-Supply Operation Low Noise: 4.7 n V /V R z @ 1 kHz Wide Bandwidth: 3.4 MHz Low Offset Voltage: 100 jjlV Very Low Drift: 0.2 |xV/°C Unity Gain Stable

BA4904A

Abstract: AV011 av033 BA3906
Contextual Info: BA3902 BA3904A BA3906 Power supply, standard voltag The BA3902, BA3904A, and BA3906 are power supplies used in car audio systems. Features • available in an SIP-M12 package • four power sources available from each IC — BA3902: 5.0 V, 8.5 V x2 , 9.0 V

Contextual Info: SGS-THOMSON TEA5725 m 4HEAD PLAYBACK AND RECORD AMPLIFIER FOR VCR PRELIMINARY DATA GENERAL • ONE 5V POWER SUPPLY ■ PLAYBACK/RECORD MODE SELECTION THROUGH A LOGIC INPUT ■ COMPATIBLE WITH ROTARY TRANSFORM­ ERS WITHOUT ISOLATION RINGS PLAY-BACK MODE RECORD MODE

ic 7485 4 bit comparator

Abstract: 16 bit comparator using 74*85 IC CD40298 Ic 7485 comparator function table CD45858 transistor JSW
Contextual Info: ^ Tex as In s t r u m e n t s CD4585B Types Data sheet acquired from Harris S em iconductor SCHS091 CMOS 4-Bit Magnitude Comparator High Voltage Types 20-Volt Rating • CD4585B is a 4-bit magnitude com­ parator designed for use in computer and logic applications that require the comparison

transistor JSW 07

Abstract: BTS5562E
Contextual Info: Data Sheet, Rev. 1.0, May 2008 SPOC - BTS5562E SPI Power Controller Automotive Power SPOC - BTS5562E Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

HSML-2822

Abstract: varactor diode model in ADS Limiter PIN diode ADS model hsml5822 PIN diode ADS model varactor diode in p-n junction in ads ADS varactor diode hsms2820 limiter zero bias schottky diode 2GHz transistor JSW
Contextual Info: Schottky Enhanced PIN Limiter Compact, low threshold and wideband Application Note 5438 Introduction The sharing of sites or towers by multiple transceivers subjects receiver front-end stages to overload from nonsynchronous transmissions via mutual coupling between

BTS5672E

Abstract: transistor JSW 12
Contextual Info: Data Sheet, Rev. 1.0, Jan. 2008 SPOC - BTS5672E SPI Power Controller Automotive Power SPOC - BTS5672E Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3