TRANSISTOR K 1352 Search Results

PDTA115TT

Abstract: PDTC115TT
Contextual Info: PDTA115TT PNP resistor-equipped transistor; R1 = 100 kΩ, R2 = open Rev. 03 — 7 September 2004 Product data sheet 1. Product profile 1.1 General description PNP resistor-equipped transistor. NPN complement: PDTC115TT. 1.2 Features • Built-in bias resistor

Contextual Info: KSB1116/1116A PN P EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING T O -8 2 • Complement to KSD1616/1616A ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic Collector-Base Voltage Symbol K S B 1 116 K S B 1 116A KS B 1116

J6 transistor

Abstract: 2SD1513 PA33 2sb1068 2sb10681
Contextual Info: NEC j Silicon Transistor 2SD1513 NPNxfc NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier #* /FEA TUR ES *fffi£IU/PACKAGE DIMENSIONS o \&W±jzWimMM]cn> ^ — 9 — Y 7 4 7\ v v 4 -rm k7 U nit: mm j K K7-f 7"%f, & t i m h FEX l& = > u 7 ^ S & f t l l c l l t r f o

CSA952

Abstract: CSC2001
Contextual Info: IS / IECQC 700000 IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 750100 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSC2001 9AW TO-92 BCE MARKING : CSC 2001 K Audio Frequency Power Amplifier.

pt 4115

Abstract: 5566A 2SD773 2SD77 2SB733 T108 1i03 PT10 resistance T3CS transistor b 1666
Contextual Info: SEC ' > < ; □ > h 7 , =7 9 S ilico n T r a n s is to r m ^ T tx r x 2SD773 N P N ir fc i ^ + U =l > h ^ X ^ NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier O K - 9 - 7 ' J V y i t i t , i] -t y W W ± ± itiM * h T u- S i<7 -t- ? - K 7 'f 7\

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSC2001 9AW TO-92 BCE MARKING : CSC 2001 K Audio Frequency Power Amplifier. Complementary CSA952 ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)

CSA952

Abstract: CSC2001
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSC2001 9AW TO-92 BCE MARKING : CSC 2001 K Audio Frequency Power Amplifier. Complementary CSA952 ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)

T460

Abstract: t460 transistor C947 ic 4541 c947 transistor transistor 9619 M 9619 JT MARKING 2SB800 2SD1001
Contextual Info: '> ' = ! > h =7 > Ì > ~ X 9 Silicon Transistor 2SD1001 N o -t — T 'i O ^ N x f ^ + - > 7 ; H K '> U h = 7 > i> 'X ^ K 7 -i 2SB 800 o P i mm) t ? >7° ' ) / > 9 >J T " f € ^ T " ë t t 0 Î B * , ifijIÎE, r^jhFE'C"t’o 1.5 ± 0.1 P T = 2 .0 W (0 .7 mm X 16 cm2- t e ^ -y

Contextual Info: KSD1616/1616A NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING TO -92 • C om plem ent to KS B 1116/1116A ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Collector-Base V oltage Symbol :K S D 1 6 1 6 Rating VcBO

5318A

Abstract: 3e tRANSISTOR 2SA916 2SC1941 transistor 2sc1941 transistor 2SA916
Contextual Info: NEC j S ilicon T ra n s is to r 2 N P N JC If ^ + M =l > S Y =7 1 C 9 4 1 9 NPN Silicon Epitaxial Transistor Audio Frequency Amplifier > y ° c o -7° i k 7 j / <m

2SC3115

Abstract: 2SA1247 2sc311 JE720 8115, transistor i093 VCF5 K076 JE 720 transistor 8115 TRANSISTOR
Contextual Info: NEC Silicon Transistor 2 S C 3 1 1 5 NPN Silicon Epitaxial Transistor Audio Frequency Low Noise Amplifier PA C K A G E D IM EN SIO N S 4 $ * / FEA TU RES o f t * r H - <7 ^ > h o - ;u T > 7^* M M J f l . ' < * 7 - T > - T n m z i s i im m m M W 'J ' 'fi o £ itì/± ,

2SB810

Abstract: JIS211 transistor C982 C382 n1j 048 ic 6116 IC 7824 ST
Contextual Info: V y □ > h 7 > y X ^ Silicon Transistor 2SB810 P N P x \£ 2 * 4$ V y ' j a > h 7 > v X 5 f *M $ B I « # t : mm * - b v h x H ï îfiO i£ J B  lÜ * f fl,  * Œ * * 3 t Sg » 0> * - * K 7 -T 7 , * <& {*#» K 5 < O ig h F E T 4 .0 ± 0 .2 U T ftiS T T o

KSB1116

Abstract: TRANSISTOR 1616 ac
Contextual Info: KSB1116/1116A PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING • C om plem ent to KSD 1616/161 6A ABSOLUTE MAXIMUM RATING TA=25°C C haracteristic Sym bol C ollector-Base Voltage :K S B 1 1 1 6 : KSB1116A C ollector-E m ltter V oltage : KSB1116

8115, transistor

Abstract: TFK03 2SC3360 T108
Contextual Info: NEC j '> U =1 > h i> J* ^ T r a n s is t o r = 7 > S ilic o n 2SC3360 N P N x t °^ + '> 7 ; P i'> ¡ Ü I Î / ± ± i ifs «fc * U =3 > h ^ -r -y ^ V X ^ NPN Epitaxial Silicon Transistor High Voltage Amplifier and Switching ^ B U / P A C K A G E DIMENSIONS

Contextual Info: BAI F4Z Com pound Transistor * P M J m W -f& M m ip - ii : m m * (R i = 22 k£2) OBN1F4Z t n > 7 ‘ ij y > ^ U Tf4:fflT"§ it,. ( T a = 25 °C ) m g »§• %- /E fS ip- i£ VljBO 60 V ■3 v 9 -y ■x . i -, 9H H 7 ir£ V e to 50 V - -9 * V kbo 5 V 3 u

S0426

Abstract: 2SC417 2SC4177 F210 T460 T540 40yw 2181M 0427J TC6215
Contextual Info: Silicon Transistor 2SC4177 f t ftw i t 7 "' -y K I C J B t L T o j g / J ' ^ ^ - r i ) ») , o2SA1611 t 3 >7° 'J / >9 m m f l t t . t. : mm) 2 . 1 + 0.1 U T-lfIfi-C'ë â i “o 1.25 ± 0 . 1 ohFE^SS^o hpE * 200 TY P . Vce = 6.0 V, Ic — 1.0 mA) o SiBEt>* ¡Ht'0

2SC945C

Abstract: lt460 2SC945 PA33 T108 2SC945 Y 2sc945 ka 1 0A4B
Contextual Info: NEC j S ïf / \ iz Silicon T ra n sisto r A _ 2 S C 9 4 5 f c m f o - m m m NPN Silicon Epitaxial Transistor Audio Frequency Amplifier f t * t U k 7 4 -rm 1 0 0 m A i t-<7 x 4 -y f - > r , o fija ìè ìììi, i s a æ f f f l t l i t o o S W / e t -,

2SB624

Abstract: 2SD596 F50450
Contextual Info: NEC Aj Silico n T ra n s is to r m+Tixrx 2SD596 NPN Silicon Epitaxial Transistor Audio Frequency Amplifier W-ÏÏÆ/ PACKAGE DIMENSIONS Unit:mm ««/FEA TU RES o m J 'B f t - B T t b ’I , ' ^ 7 " U -y K IC ffl t i r m & T t . 2 .8 ± 0 .2 Oh p £ [ wj ^ H p £ - 200 TYP. (V(;£ —1.0 V, Ic~100 rnA)

KJE 17 transistor

Abstract: transistor k 2628 kje t2 KJE u5 transistor et 454 sd774 l0534 pj 0286 n 332 ab KJE transistor
Contextual Info: SEC j h = 7 ? Silicon T ra n sisto r 2SB734 + U h =7 > i> 7 5 PN P Silicon Epitaxial Transistor Audio Frequency Power Amplifier o YA o T "Pj 7°^oo i 7 > Unit : mm c- \ , ft i t EE T"t~ o P T = 1 .0 W, V C E 0 = — 50 V b =i> 7°') 9 > 9 Q 2SD 774 P A C K A G E D IM EN SIO N S

marking M63

Abstract: marking K50 transistor
Contextual Info: T I • I SI NEC Ar 7 lÏ T A \ f Compound Transistor A GN1L4Z M pnp ^ 4# j u M '> y =i > » o/<>f r x i Ê S t è Ri = 4 7 kû (Ta -2 5 nn *Ê *fft*5 È :fê 9 9 i = ^ u 9 9 ? v 9 9 B& V -y ÿ f S i W ± V CEO - 5 0 V V ebo - V :< H ) ili \ 9 {£ ~y 3c

ic SE 135

Abstract: 00jT K49H
Contextual Info: i r — S* • i s — h BA1A4Z Compound Transistor Î& ÎÆ 4# ' r t ü t P N P x □ ^ - fi i t : mm) o ^ M T X i t ÿ f i l l T V ' Î t » ( R i = 10 4 k£2) 6° ¥ O B A 1 A 4 Z b = > > * Ê * JS * Æ fê (T a = n 9 n V 9 9 - 3 - 1 3 V 3 u- 9 y •

transistor K 1352

Abstract: ECG5013A ECG1352
Contextual Info: PHILIPS E C G INC 17E ECG Sem iconductors bbSBTEfl 0DGSS2Ô b ECG 1352 30 W AF PO Features • Especially designed for hi-fi stereo am plifiers • Less than 0 .2 % harm onic distortion at full p ow er level The ECG 1352 is a self-contained high power amplifier with quasi-complementary class B

ATF-58143

Abstract: GRH708 GRM40 LL2012-F ATF10236
Contextual Info: A Low Noise High Intercept Point Amplifier for 2 GHz Applications using the ATF-58143 PHEMT Application Note 1352 Introduction The Agilent Technologies’ ATF-58143 is a low noise enhancement mode PHEMT designed for use in low cost -commercial applications in the

ATF-58143

Abstract: GRH708 ATF58143 LL2012-F
Contextual Info: A Low Noise High Intercept Point Amplifier for 2 GHz Applications using the ATF-58143 PHEMT Application Note 1352 Introduction The Avago Technologies’ ATF-58143 is a low noise enhancement mode PHEMT designed for use in low cost -commercial applications in the UHF through