TRANSISTOR K 265 Search Results

KD621K20

Contextual Info: m ß /B S K KD621K20 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 200 Amperes/1000 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use

Contextual Info: K W E R E X KD621K20 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 200 Amperes/1000 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use

kd721K

Contextual Info: 7294621 POWE RE X INC ' m Tfl I>F| 7ET4LS1 DODSabl 4 N E R E K KD721KA2 Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Dual Darlington Transistor Module 25 Amperes/1000 Volts Description Powerex Dual Darlington Transistor Modules are designed for use in

7B468

Abstract: 7B465 76465 75469 sn75466 sn75465
Contextual Info: SN75465 THRU SN75469 DARLINGTON TRANSISTOR ARRAYS D 2 6 2 5 , DECEMBER 1 9 7 6 -REVISED SEPTEMBER 1 9 8 6 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRA YS 500-mA Rated Collector Current Single Output D OR N P A C K A G E (TO P V IEW ! • High-Voltage Outputs . . . 100 V

TRANSISTOR SE 135

Abstract: BUK455 BUK455-50B BUK455-50A T0220AB
Contextual Info: N AMER PHILIPS/DISCRETE SSE D m Ljfci53ci31 □□504ÔS 7 • Po w erM O S tra n s isto r B U K 455-50A B U K 455-50B T-31-Ì3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

TC-7986A

Abstract: 2SK2112 CMS01 7986A diode lt 0236
Contextual Info: zr — *5? N E h ^ > v ^ 3* MOS Field Effect Transistor r j C • :> — h 2 S K 2 1 1 2 MOS FET 2 S K 2 1 1 2 IÎN 3 1 + * ; H Ë M O S F E J T & U , * C ct 5 ¡ t g E K ^ g l * * -f -y T 't o * < - y * > 7 ìS j£ f c jÌt 'f c « > , C D r ^ ^ iX - ^ llE S i ^ ,

TC-7606

Abstract: 2SK1283
Contextual Info: M O S Field Effect Pow er Transistor 2SK1283 7 /< 2SK 1283 fi, F E T T , N > 5 V m i l 1? ; * I C X 4 7 f > FET K f f p '- 'V — M O S K x 6 X T to i& ir y f& ÏA T , y i / / 0 ft -M O S ', x ^ y f -> y m t b t z ls b , i - > y°ff m ï\n z- g kïà T to

ym 26500

Contextual Info: K-BAND BIPOLAR OSCILLATOR TRANSISTOR OUTLINE DIMENSIONS Units in nm FEATURES_ • FUNDAMENTAL OSCILLATION GREATER NE64800 (CHIP) THAN 20 GHz • LOW PHASE NOISE • OPERATION OVER MIL-SPEC TEMP RANGES ÜH Bonding Area ELECTRICAL CHARACTERISTICS (t a - 2 5 - c >

TC7988

Abstract: 2SK2158 MARKING J1A transistor WT7 J Fet marking 2 AW marking N00 3250Q
Contextual Info: M O STféïl-f^ jÎJiP: h 37 > v J X ^ M O S Field Effect Transistor r ^ j_ C I E • •fc I ÌK N 2 S K 2 1 5 8 MOS FET r ü iH X -f y 2 S K 2 1 5 8 I Î1.5 V l E l i £ -f U , fÉ ÎŒ T ig B T 't , ÿ 9 Æ3 * J U i ^ M O S F E T T 5* A 'O K -7 - f 'V y

ST25C

Abstract: st 25 c transistor electronic ballast for T12 but54 BVW32 transistor a09 transistor 800V 1A Scans-0014927 A08A 14TI
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • 6 ti S 0 0 cib OOORSEi BUT 54 T m O J I P W K iiiS electronic Cwbv*ttchnotog« Silicon NPN Power Transistor r - 3 5 - is Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique

2SC2331

Abstract: SIRBA TC5344A if4g 2SA1008 PBT GF 20 PBT GF 10 fr 2SC2331 Y
Contextual Info: T -5 > • S / - h s < r> — Silicon Power Transistor 2SC2331 N R N x t ^ + '> 7 ; H * > 'J U > h =7 I i f f l 2 S C 2 3 3 1 ia iS fê x ^ ^ 7 > /X n -, v - f > rm t U K ? n f c 7 - f > 7'- w t - ^ ( f - f i ¿*<7 K ÿ ^ f '< £ i r M M x - t o iff : m m )

transistor BC 245

Abstract: transistor BC 245 c ST25C transistor bc 138 FC4A TRANSISTOR BC 137 but54 TELEFUNKEN 12A3 T0126
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • 6 ti S 0 0 cib OOORSEi BUT 54 T m O JIP W K iiiS electronic Cwbv*ttchnotog« Silicon NPN Power Transistor r - 3 5 - is Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique • Short switching time

Contextual Info: D2 PA K BUK9635-100A N-channel TrenchMOS logic level FET Rev. 2 — 9 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

BUK9535

Abstract: BUK9635-100A
Contextual Info: D2 PA K BUK9635-100A N-channel TrenchMOS logic level FET Rev. 2 — 9 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: 4SE » ISOCOn COMPONENTS LTD • T ^ -Ì5 4flflb510 0000312 3 « I S O MOC 8080X 1 »ff ft,'Uiußib^k kCB » I‘4~>'■ / 'f W V ”> \ ■^ ^ « " V * - ! . p ^ ^ .: 1! ' . J|^à^p ^ p .». MffVI ■ SlP ?M OPTICALLY COUPLED ISOLATOR DARLINGTON TRANSISTOR OUTPUT

smd transistor 2f

Abstract: 330 smd transistor 2sk 168 K2663 smd TRANSISTOR code 2F 2SJ 162 m 147 smd transistor s4vb 10 73 SMD CODE TRANSISTOR 2SK smd transistor 1Z
Contextual Info: Basic Ordering and Packing Form Explanation of Packing Lists I.Type No. Exam ple 1 D 1N □ Exam ple 2 2 S K 2663 - Reverse voltage X l/1 0 . I -JEITA No. -JEITA Classification. 2SA, 2SB, 2SC, 2SD: Transistor 2SJ, 2SK: M OSFFT 2.C ode No. The code specify each packing form.

lt 7209

Contextual Info: MSE ]> ISOCOn COMPONENTS LTD • MflâbSlO 0D0Q24b S ■ ISO CNX 72AX V v 'h k W ^ y x & i'. ■ r; ; - j.' OPTICALLY COUPLED ISOLATOR TRANSISTOR OUTPUT D E S C R IP T IO N The CNX 72AX is a optically coupled isolator consisting o f a G allium Arsenide infrared emitting

b310 diode

Abstract: diode ssil
Contextual Info: 1DI75F-120 75a M ïfé '+ iÈ : Outline Drawings POWER TRANSISTOR MODULE : Features • S Ü ÎE E • High. Voltage 7'J—s f c ' f L / / ' ? ' K f * 3 f f l E • A S O * ''J a L ' •mmr* Including Free W heeling Diode Excellent Safe Operating Area i nsulated Type

11H19

Abstract: B307
Contextual Info: 1DI75E-120 75a •’ Outline Drawings POWER TRANSISTOR MODULE : F e a tu re s • SW Œ High Voltage • 7 U —sjî'f K rtJR • A S O à 'lS l' • flêäüffi Including Free W heeling Diode Excellent Safe Operating Area Insulated Type If fliÊ : A p p lic a tio n s

LTTG

Abstract: 1DI75E-100 30S3 M206 T460 T760 T930
Contextual Info: 1DI75E-100 75a / < 7 n .-)U - h 7 I • Out l i ne D raw ings POWER TRANSISTOR MODULE : Features • If/± • High Voltage 7 '; - j m uv * • A S O tf^ v .' - k rt * Including Free Wheeling Diode Excellent Safe Operating Area Insulated Type \R ìà • A p p lic a tio n s

2SK872

Abstract: IRF 545 TRANSISTOR b 772 p UPC1100 TLE 6299 R MFE 521 261717
Contextual Info: M O S Field Effect Pow er Transistor 2SK872 N f t ^ ' ° 7 -M O S i 2 S K 8 7 2 i, N T '* > X ^ <, X >f -y f- > / ?• > /''.iii1 !?. # f f l — MOS F E T ( - ¥ - f Ì ! mm *s'i*^ lT J3 tj , ¡ÉfJSlìSEX / D C - D C 3 > ^ '- ^ i:iilt t „ m ° V d ss

b&r b303

Contextual Info: 1DI5OH-12O 50a • O utline D rawings POWER TRANSISTOR MODULE : F e a tu re s • S ltfE High Voltage • 7>J— U K l * 3 i • A S O A ''i£ i.' • ü ê lU fi Including Free W heeling Diode Excellent Safe Operating Area Insulated Type : A p p lic a tio n s

Contextual Info: ISOCOfl COMPONENTS LTD m u * » t« v . . ir f J i m * » w w » * « » « a » ? j > •3 'V . M i i M S M Haatsio Dooosbs 3 HSE ]> g K M M frn * f t Jf ö iso t WMT3 i j w V > Æ > W i J ö * I £ # •V f t ! OPTICALLY COUPLED ISOLATOR TRANSISTOR OUTPUT

acrian RF POWER TRANSISTOR

Abstract: TU S1 3003 VTV-300 VTV-300-2 DDD1557 acrian RF POWER TRANSISTOR cd4792-4 VTV-300-4 F627 F627-8 F627-8-Q1
Contextual Info: 0182998 ACRIAN m ybui i» m w « p in y in a w M K • ■ ■ <p w * w T7 INC m m w v m m « m m h D Ë^G lflETifl n a n a a m a m n n w □D01524 S T—33—13 i A GENERAL VTV-300 DESCRIPTION The VTV-300 is a silicon NPN transistor designed for broadcast