TRANSISTOR K 603 Search Results

BP317

Abstract: MMBTA42 MMBTA92 254-D
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBTA42 NPN high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN high-voltage transistor MMBTA42 PINNING FEATURES • Low current max. 100 mA PIN

MMBTA92

Abstract: BP317 MMBTA42
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBTA92 PNP high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification PNP high-voltage transistor MMBTA92 PINNING FEATURES • Low current max. 100 mA PIN

BP317

Abstract: MMBT2222A PMBT2907A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT2222A NPN switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN switching transistor MMBT2222A FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 40 V).

MMBT3906 PHILIPS

Abstract: transistor MMBT3906 marking code 10 sot23 marking code ce SOT23 BP317 MMBT3904 MMBT3906
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT3906 PNP switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification PNP switching transistor MMBT3906 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 40 V).

marking code 10 sot23

Abstract: BP317 MMBT3904 MMBT3906
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT3904 NPN switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN switching transistor MMBT3904 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 40 V).

Contextual Info: DISCRETE SEMICONDUCTORS DAT k, halfpage M3D088 MMBTA42 NPN high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN high-voltage transistor MMBTA42 PINNING FEATURES • Low current max. 100 mA PIN • High voltage (max. 300 V).

1.4464

Abstract: NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PA C K A G E D R AW IN G cordless phones DECT, PHS, etc. . (Unit: mm) FEA TU R E S

od300

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER T he 2S C 5 2 8 9 is ideal fo r the final stag e am p lifie r in 1.9G H z-band digital cord le ss phones D EC T, PHS, etc. . PA C K A G E D R AW IN G (Unit: mm)

Contextual Info: TOSHIBA 2SK3132 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2 S K 3 1 32 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS TO-3P (L)

JE 800 transistor

Abstract: UPA76ha upa76 PA76HA KJE transistor pa76h JE 33 KJE 17 transistor B0188 361-s
Contextual Info: NEC W T / \ M À f 7 'S ' h =7 Com pound Transistor ¿¿PA76HA t: ^ n p n x >; □ h^ * N PN Silicon Epitaxial Compound Transistor Differentia! Amplifier ^ f^ H l/PA C K A G E DIMENSIONS if t * / F E A T U R E S O l c h i p m iÊT ibètztb , -< 714 / V b e = 2 m V T Y P . )

MT460

Abstract: TI08 marking ti08 27ie fg m 004 26 01 3905g F0429 0429
Contextual Info: S t • 2 /— K NEC m • Compound Transistor /V t 7L ï t GA1A4Z *m ft m W B 0 o L 7 X |j £ # t £ T ^ W Ì : mm) t < ( R i = 10 k Q ) OE t O G N 1A 4Z ^ >7° U / ]) T '£ t t ( fÊ * h ft* 5 Ë fê (Ta = 25 °C) II 3 u ? ^ x - l ^ . - < _ x ^ 'E G E

TRIAC BCR 16 km

Abstract: PJ 1199 diode TRIAC BCR 12 km catalog transistor TO-220-AR RENESAS marking code package triac sot 89 TRIAC BCR 10 AM pj 999 diode TO-92-AB 110N04
Contextual Info: Part Numbers Part Numbers 1 to 2 Part No. Destination Thyristor and triac Part No. designation CR 8 K M -12 A BCR 8 C M -12 L A Power Transistor Product No. Designation Renesas Uniform Product Number Current ratings (Ex.) Version Commutation characteristics (Triac only)

Contextual Info: ROHM CO 40E LTD T B S a m J> DDDSIOG M ERHM 2SD1562A h 7 > y ^ ^ / T ransistors - :-T 23 3 - O 2SD1562Â cj 2 L \ £ $ * V 7 t f \ s - H & NPN V lJ - 1 > k 7 > V * $ i & Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor

MGF4916F

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4910F Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The M G F 4 9 1 0 F series super-low -noise HEMT High Electron M ob ility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic

R1RP0408D

Abstract: R1RP0408DGE-2LR R1RP0408DGE-2PR
Contextual Info: R1RP0408D Series 4M High Speed SRAM 512-kword x 8-bit REJ03C0112-0200 Rev. 2.00 Dec.1.2008 Description The R1RP0408D Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit

transistor vergleichsliste

Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F
Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N

6DI50MA-050

Abstract: TFR3M AR4J
Contextual Info: D 6 I 5 M A - 5 5 a : Outline Drawings POWER TRANSISTOR MODULE • 4M : Features • f f i A h FE High D C Current Gain • K S W / f H i g h Speed Sw itching : Applications • if L f f l'O '*— $ General Purpose Inverter • Uninterruptible Power Supply

2sc5194-t1

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AM PURER NPN SILICON EPITAXIALTRANSISTOR P A C K AG E D R A W IN G S FEATU RES • Low Voltage O peration, Low Phase D istortion • Low Noise Unit: mm N F = 1.5 dB TYP. @ V ce = 3 V, Ic = 7 mA, f = 2 GHz

cl25C

Abstract: 251C BC858B BC858BW SST6838 SST6839 T116
Contextual Info: Transistors I SST6839 PNP General Purpose Transistor SST6839 • E x te r n a l dim ensions Units : m m •F e a tu r e s 1) B V ceo< — 4 0 V ( lc = — 1m A) SST6839 2 ) Complements the SST6838. 1 .9 + 0 .2 •P a c k a g e , marking, and packaging specifications

f4316

Abstract: F4319F MGF4319F
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310F Series ! S U P E R LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The M G F 4 3 1 0F series super-low -noise HEMT High Electron M o b ility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic

2SC3739

Abstract: 2SA1464 marking 1BW 1BW MARKING 1bws
Contextual Info: SEC j m ^ T i x t n '> 1J =3 > Silicon T ran sisto r A 2SC3739 NPN Silicon Epitaxial Transistor High Frequency Amplifier and Switching ^/FEATUR ES ^ 0 / P A C K A G E DIMENSIONS Unit : mm O f f iJ U ? Æ (i b t i > ), • A 'i "/ - f > 7 , Í & J S ?£ W M t£ ¿ " ) i i & H 4 - 0

FCK 111

Abstract: SS5100 la 5531 TRANSISTOR BO 346 T108 T46C T-10803 SKs 22 TRANSISTOR marking EP
Contextual Info: - y - ^ NEC M Com pound Transistor i ï r / v f x & GA1 F4N ^ - f ì & • m m o s < J T X 1& t j i $ : f t M L X ^ t i ' c (R i = 22 k£2, R2 = 47 kQ) c o G N 1 F 4 N t 3 > 7 ° IJ y > 9 'J X i t m T è & 1~c ( T a = 25 °C ) II Marking fê

cd 6283 cs

Abstract: cd 6283 ic ic cd 6283 cd 6283 2SJ134 d 6283 ic IC tl 082 cn TEA-509 IC cd 6283 cs
Contextual Info: MOS M O S Field Effect P o w e r Transistor p 2 S J1 3 4 i , P * -v MOS <? \\\ h (•- J : ó x * > t i t t / i ; <, w / ^ f « k, — MOS F E T x ï 4 / ^ v f-> 7 î v VET X , 5 V ^1),'^; I C > i i x t f , t+s• o M O CO * - ? . t v % 10.6 MAX. 10.0 , 0 3.6±0.2

Mosfet T460

Abstract: T460 mosfet c947 transistor transistor sb 772 C947 8028 ae 2SK2409 2SK240 tea 1020 SB 772
Contextual Info: 7*— *$? • i s — h M O S * IM & * M O S f e t MOS Field Effect Transistor 2SK2409 N51-V ^ ; u /\0|7 -M O S F E T ^ 'f > y >7 X Ü Æ 2 S K 2 4 0 9 ÌN ^ * J U ÌÉ M m ° 7 -M O S F E T T , t * u, y o * =l x - * < 7 * > 4.5 ± 0.2 10.0 ± 0.3 # «