TRANSISTOR K 744 Search Results

aec 7446 datasheet

Abstract: BUK7606-75B BUK75 aec 7446
Contextual Info: D2 PA K BUK7606-75B N-channel TrenchMOS standard level FET Rev. 03 — 3 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: D2 PA K BUK7606-75B N-channel TrenchMOS standard level FET Rev. 03 — 3 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

transistor buz 104

Contextual Info: SIEMENS BUZ 104 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated k • dv/df rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ 104 Vbs 50V b 17.5 A ^bS on 0.1 Û Package

BD329

Abstract: BD330 transistor BD329 transistor BD330 Transistors BD329 power transistor bd329 Power Transistor 1975 B0329 IC TRANSISTOR k 744
Contextual Info: BD329 J V s. SILICON PLANAR EPITAXIAL POWER TRANSISTOR N -P -N tr a n s is to r in a SOT-32 p la stic envelope intended fo r c a r -r a d io output sta g e s. P -N -F com plem ent is BD330. M atched p a irs can be supplied. Q U IC K R E F E R E N C E D A T A

lt 744

Contextual Info: KSB744/744A PNP EXITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • C om plem ent to KSD794/KSD794A ABSOLUTE MAXIMUM ATINGS C h a ra c te ris tic Sym bol Collector-Base Voltage Collector-Emitter Voltage : KSB 744 : KSB 744A Emitter-Base Voltage

MCA443

Abstract: 70cN
Contextual Info: N AMER bTE D PHILIPS/DISCRETE • bbS 3ci31 D02ôûbE 744 I BLU60/28 UHF POWER TRANSISTOR NPN silico n planar e p ita xia l tran sisto r p rim a rily intended fo r use in radio tran sm itte rs in th e 470 MHz co m m u n ica tio n s band. Features • M ulti-base stru ctu re and e m itte r ballasting resistors fo r an o p tim u m tem perature p ro file

1445s

Abstract: transistor D 1761 PH1617
Contextual Info: ^fccO'H m an A M P com pany Wireless Bipolar Power Transistor, 10W 1.6- 1.7 GHz _ .744 _ 18.90 Features • • • • • • PH1617-10 Designed for Linear Amplifier Applications Class AB: -33 dBc Typ 3rd IMD at 10 Watts PKP Class A. +49 dBm Typ 3rd Order Intercept Point

DM7445J

Abstract: DM74145J 54/74 TTL series DM54145W DM54145J DM5445J DM74145N DM7445N dm54145
Contextual Info: D M 5 4 4 5 / D M 7 4 4 5, D M 5 4 1 4 5 / D M 7 4 1 4 5 Display Drivers L\1S D M 5445/D M 7445 DM 5414 5 /D M 7 4 1 4 5 B C D - t o - d e c im a l d ec o d e r/d riv e rs g en eral d escrip tion The DM 5442/DM 7442 and DM 54145/DM 74145 BCD-to-decimal decoder/drivers are fu lly compati­

TRANSISTOR SUBSTITUTION

Abstract: ED42 Scans-008492 Mextram
Contextual Info: Efficient Param eter Extraction for the M EX TR A M M odel W .J. Kloosterman, J.A.M. Geelen and D.B.M. Klaassen Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands tel.: +31 40 744093, email: kloosteb@prl.philips.nl A b stract

Contextual Info: Philips Sem iconductors 0030155 flO fl UHF push-pull power MOS transistor B i APX Product specification BLF546 N ANER PHILIPS/DISCRETE bRE » PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures

Contextual Info: bbSBRBl D O E n Q l 101 • APX Philips Sem iconductors Prelim inary specification HF/VHF power MOS transistor BLF221B N AMER PHILIPS/DISCRETE FEATURES b^E » PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability

Contextual Info: TEXA S IN ST R -COPTOÏ bS D E ^ j f l T t . l 7 S L 0□ 3 b 744 8 9 6 1 7 2 6 TEXAS INSTR OPTO 62C r 36744 - j j - o ? TIP29, TIP29A, TIP29B, TIP29C, TIP29D, TIP29E, TIP29F N-P-N SILICON POWER TRANSISTORS J U LY 1 9 68 - RE V ISE D OCTO BER 1 9 84 •

j78 transistor equivalent

Abstract: Transistor Equivalent list j160 capacitor philips transistor BD239 equivalent bd239 equivalent J6 transistor BD239 BY239 LLE16045X SC15
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LLE16045X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR amplifier. • Interdigitated structure provides

2322151

Abstract: M8807 philips 2222 115 13102 BLF221B URA310 philips resistor 2322 BLF221
Contextual Info: tjbS3R31 Philips Sem iconductors OQE^Ql 101 MAPX Preliminary specification HF/VHF power MOS transistor BLF221B N AMER PHILIPS/DISCRETE FEATURES b=JE » PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability

Contextual Info: N AMER PHILIPS/DISCRETE fc^E D bbsa^i dos^ m tsd i IAPX BLW60C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized

Philips film capacitors 27 pf

Abstract: trimmer 3-30 pf TL 2222 BLW60C Philips film capacitors polystyrene b32s philips carbon film resistor z670
Contextual Info: bSE D • TllOôBb Gabassi 214 « P H I N BLW60C PHILIPS INTERNATIONAL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile, industrial and m ilita ry transmitters w ith a nominal supply voltage o f 12,5 V. The transistor is resistance stabilized

MAX730ACPA

Contextual Info: 19-0165; Rev2; 1/96 A M X IA I 5V, S t e p - D o w n , C u r r e n t - M o d e PWM DC-DC C o n v e r t e r s _ F e a t u r e s The M A X 730A /M A X 738A /M A X 744A are 5V -outpu t CMOS, step-down switching regulators. The MAX738A/

transistor tt 2222

Abstract: TT 2222 os TT 2222 LM 2222 transistor tt 2222 vertical BLf221 2222-581 BH RV transistor BLF221B OP03
Contextual Info: Preliminary »pacification Philips Semiconductors HF/VHF power MOS transistor PHILIPS INTERNATIONAL FEATURES BLF221B SbE D • 7110fl5b 0DM37Mel 37M HIPHIN PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability

ir 847p

Abstract: 3010P-K Y744 CNY181V crt5000 2106U T1102G T1103G DT1103 64bcn
Contextual Info: Tem ic S e m i c o n d u c t o r s Optoisolators C haracteristics V io Package Type VRMS CTR V BRCEO Ip = I0 m A IC=1 m A % V @ Ip and Ic V CEsat ton / toff Ic Rl =100 q V mA mA |xs ! mA 6 Pin Optoisolators - with Transistor Output ^ 1 4 N 2 5 2i 3750 100020)

74LS247

Abstract: PIN DIAGRAM 74LS247 TTL 7448 9368 compatibili pin diagram of 74LS247 PIN DIAGRAM 74LS248 TTL 7446 74LS248 7-seg TTL 74154
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS DIGITAL - T T L D138 9311, 93L11, 54/74154 D139 9319, 9320 Vcc = Pin 24 GND = Pin 12 Vcc = Pin 16 GND = Pin 8 D141 9307, 54/7448, 54LS/74LS48, 54LS/74LS248 54LS/74LS249 D140 9315 54/7441, 74141 7 1 2 6 3 5 TTTTTTTTTT 16 15

BFG55A

Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
Contextual Info: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

HD6413003F16

Abstract: hd6413002f16 HD6473042F16 TL084-LM324 piezo autotransformer HD6413004F16 HD6413005F16 laptop inverter SCHEMATIC TRANSISTOR 6N138 SPICE HD6413003F-16
Contextual Info: INDEX Order Code Description Manufacturer 549-435 549-447 642-666 ZM33064C 789-239 ZSD1000D8 789-276 663-232 663-244 707-790 TD300IN 787-346 TSH10IN TSH11IN TS271CN TS274ID TS902IN TS912IN TS3V393IN TS3702ID 789-872 — 789-859 — OPT101P BUF634P 789-744

Contextual Info: Philips Semiconductors Preliminary »pacification T HF/VHF power MOS transistor PHILIPS INT ER NATIONAL FEATURES - 3 V - 0 5 BLF221B 5bE P • 7110fl5b □ D M 3 7 4 el 37M H P H I N PIN CONFIGURATION • High power gain • Easy power control • Gold metallization

Contextual Info: HIP5060 < X Ì HARRIS S E M I C O N D U C T O R Power Control 1C Single Chip Power Supply Features Description • Single Chip Current Mode Control 1C The HIP5060 is a complete power control IC, incorporating both the high power DMOS transistor, CMOS logic and low level analog circuitry on the